The present invention relates generally to power regulators, and in particular, to multi-phase converters with current load balancing.
Embodiments of the invention are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like reference numerals refer to similar elements.
Multiple-phase switching power converters (such as the depicted voltage regulator of
Typically, multi-phase switching power converters utilize pulse width modulation (PWM) to adjust the duty cycles of the pulse trains accordingly, with each pulse being at a unique phase. One design challenge is to balance the average current driven through the inductor phases, as inductor and other circuit component mismatches can cause unbalanced load currents. In fact, phase current balancing may be particularly important for integrated voltage regulators (multi-phase converters that are part of the same chip as the load to which they supply) since the unbalanced load currents can more readily cause the relatively small inductors to saturate.
In some embodiments described herein, proposed schemes utilize a duty-cycle sensing technique to detect load current imbalance in each individual inductor, and then adjusts the duty cycles for the specific phases through a digital duty cycle tuner.
The voltage (vref) at C1 is an integration, or average, of all of the switch device output levels (Phx1′ to Phxn+). The voltage (vp) at C2 will be the voltage level at a switch device output, as selected by Mux 232. These voltages are essentially DC levels. The resistor and capacitor values for R1, R2, C1, and C2 may be any suitable values to achieve stable, measurable indicative voltages. In some embodiments, the R1C1 and R2C2 time constants should be sufficiently large, e.g., 100 times the period (T) of the PWM clock, although this is not necessary for practicing the invention. So, for example, if the bridge switches are being driven at a clock frequency of 100 MHz (T=10 nS, then the RC time constants would be greater than 1 μS.) In some embodiments, each phase voltage is compared against he average (vref) in order to control it, through its duty cycle tuner, to approach (if not equal) the average value, which results in the phase leg currents, in turn, more closely approaching each other and thus, more closely approaching balance with one another. When the selected phx′ signal is not equal to vref, unbalanced load current is sensed (detected). Balancing adjustments are then applied through tuning the duty-cycle of the selected phase signal.
In the depicted embodiment, the duty cycle tuner circuitry comprises: (1) duty cycle tuners 212, with associated control registers 214, for tuning (or offsetting) the duty cycle in each phase, and (2) logic blocks (234, 236, and 238) for setting the duty cycle adjustment in each duty cycle tuner based on the comparisons between the average phase voltage (vref) and the individual voltages (vp). It should be appreciated that the logic blocks may be implemented with any suitable digital logic (software, state machines, discrete gates, etc.). The depicted blocks include a shift register 234, a lock detector 236, and an up/down counter 238, coupled together as shown. Counter 238 is an m-bit up-down counter that, for example, may count up when input fx is high and down when input fx is low. Lock detection circuit 236 is designed to sense when vp is sufficiently close to (if not equal to) vref.
In operation, the switch devices (D1 to Dn) are controlled by multiphase pulse train signals (Ph1′ to Phn′), e.g., pulse width modulated rectangular waves. Digital duty cycle tuners 212 are used to alter the duty cycle of a selected phase (in1-inn) signal. A duty-cycle tuner may be any circuit that modifies the duration ratio of switch device “on” (e.g., binary high level) to off (e.g., low level) over a period of an incoming switch device signal. In the depicted embodiment, the duty-cycle ratio is adjusted through an m-bit control (c) input from the control register 214.
Reference is made to both
Comparator 222 compares vref (the average phase voltage level) with vp for the selected phase. The comparator generates a binary signal fx that indicates whether vp is smaller or greater than the average voltage (vref). For example, fx may be ‘0 if vp is greater than vref and ‘1 if vp is less than vref. If vp is less than vref, (fx at high state for this example), the counter 238 will count up and in turn, increase the duty-cycle for the selected phase by increasing its control register 214 value. As long as vp is below vref, the duty-cycle will keep increasing. After one or more cycles, vp will eventually exceed vref, causing fx to switch, e.g., to a low state. During this low state, the counter counts down and lowers the duty-cycle. This process repeats itself until fx eventually forms a periodic signal (see
The lock detector 236 senses this event and then generates a lock signal, as indicated in
In the preceding description and following claims, the following terms should be construed as follows: The terms “coupled” and “connected,” along with their derivatives, may be used. It should be understood that these terms are not intended as synonyms for each other. Rather, in particular embodiments, “connected” is used to indicate that two or more elements are in direct physical or electrical contact with each other. “Coupled” is used to indicate that two or more elements co-operate or interact with each other, but they may or may not be in direct physical or electrical contact.
The term “PMOS transistor” refers to a P-type metal oxide semiconductor field effect transistor. Likewise, “NMOS transistor” refers to an N-type metal oxide semiconductor field effect transistor. It should be appreciated that whenever the terms: “MOS transistor”, “NMOS transistor”, or “PMOS transistor” are used, unless otherwise expressly indicated or dictated by the nature of their use, they are being used in an exemplary manner. They encompass the different varieties of MOS devices including devices with different VTs, material types, insulator thicknesses, gate(s) configurations, to mention just a few. Moreover, unless specifically referred to as MOS or the like, the term transistor can include other suitable transistor types, e.g., junction-field-effect transistors, bipolar-junction transistors, metal semiconductor FETs, and various types of three dimensional transistors, MOS or otherwise, known today or not yet developed.
The invention is not limited to the embodiments described, but can be practiced with modification and alteration within the spirit and scope of the appended claims. For example, it should be appreciated that the present invention is applicable for use with all types of semiconductor integrated circuit (“IC”) chips. Examples of these IC chips include but are not limited to processors, controllers, chip set components, programmable logic arrays (PLA), memory chips, network chips, and the like.
It should also be appreciated that in some of the drawings, signal conductor lines are represented with lines. Some may be thicker, to indicate more constituent signal paths, have a number label, to indicate a number of constituent signal paths, and/or have arrows at one or more ends, to indicate primary information flow direction. This, however, should not be construed in a limiting manner. Rather, such added detail may be used in connection with one or more exemplary embodiments to facilitate easier understanding of a circuit. Any represented signal lines, whether or not having additional information, may actually comprise one or more signals that may travel in multiple directions and may be implemented with any suitable type of signal scheme, e.g., digital or analog lines implemented with differential pairs, optical fiber lines, and/or single-ended lines.
It should be appreciated that example sizes/models/values/ranges may have been given, although the present invention is not limited to the same. As manufacturing techniques (e.g., photolithography) mature over time, it is expected that devices of smaller size could be manufactured. In addition, well known power/ground connections to IC chips and other components may or may not be shown within the FIGS., for simplicity of illustration and discussion, and so as not to obscure the invention. Further, arrangements may be shown in block diagram form in order to avoid obscuring the invention, and also in view of the fact that specifics with respect to implementation of such block diagram arrangements are highly dependent upon the platform within which the present invention is to be implemented, i.e., such specifics should be well within purview of one skilled in the art. Where specific details (e.g., circuits) are set forth in order to describe example embodiments of the invention, it should be apparent to one skilled in the art that the invention can be practiced without, or with variation of, these specific details. The description is thus to be regarded as illustrative instead of limiting.