Claims
- 1. A device for kinetically controlling the rate of vapor diffusion during crystal growth comprising discrete diffusion pathways, wherein said pathways affect the vapor diffusion rate between a crystal growth solution and a reservoir solution.
- 2. The device of claim 1 wherein the diffusion pathways of the device are discrete channels.
- 3. The device of claim 2 wherein the device comprises at least two channels, wherein the channels are between the crystal growth solution and at least two different reservoir solutions.
- 4. The device of claim 2 wherein channel size or geometry can be actively controlled.
- 5. The device of claim 1 wherein the device is made of a material porous to a vapor moving between the crystal growth solution and the reservoir solution.
- 6. A method of controlling the rate of vapor diffusion between a crystal growth solution and a reservoir solution comprising the device of claim 1.
- 7. A method for crystallization of a biological molecule comprising the steps of:
(a) placing a reservoir solution in the bottom of a container; (b) placing a device comprising discrete diffusion pathways in the top of the container; (c) placing a crystal growth solution on the opposite end of the device from the reservoir solution; and (d) sealing the container, the device and the solutions.
- 8. The method of claim 7 wherein the crystal growth solution is placed in a well on the device.
- 9. The method of claim 7 wherein the crystal growth solution is placed on a coverslip, wherein the crystal growth solution is hanging over the device.
- 10. The method of claim 7 wherein the device comprises at least one channel between the crystal growth solution and the reservoir solution.
- 11. The method of claim 10 wherein the device comprises at least two channels.
- 12. The method of claim 11 wherein each of the channels are between the crystal growth solution and at least two different reservoir solutions.
- 13. The method of claim 7 wherein the device comprise a material porous to vapor from the solutions.
- 14. A device for kinetically controlling the rate of vapor diffusion during crystal growth comprising:
(a) a reservoir unit comprising at least one reservoir chamber; (b) a channel unit comprising at least one discrete channel; and (c) a selection unit comprising an opening wherein the opening is large enough not to control the rate of vapor diffusion; wherein the reservoir unit, the channel unit and the selection unit can rotate to align the reservoir chamber, the discrete channel and the opening.
- 15. The device of claim 14 further comprising a cover.
- 16. The device of claim 14 wherein the channel unit further comprises an opening wherein the opening is large enough not to control the rate of vapor diffusion.
- 17. The device of claim 14 wherein the channel unit is sealed onto the reservoir unit and the selection unit is sealed onto the channel unit.
- 18. The device of claim 14 wherein at least one channel of the channel unit is actively controlled.
SPONSORSHIP
[0001] Work on this invention was supported in part by NASA Cooperative Agreement No. NCC8-126. The Government has certain rights in the invention.
Provisional Applications (1)
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Number |
Date |
Country |
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60204436 |
May 2000 |
US |