METHOD AND DEVICE FOR MEASURING RESISTANCE OF RESISTIVE SENSOR

Abstract

The invention refers to a method of measuring resistance of the resistive sensor (5), where the value of resistance of the resistive sensor (5) is determined from its series connection with actively controlled resistor network (3) with selectable value of resistance and with a periodic waveform voltage source (7), and further a device for measuring resistance of the resistive sensor (5) including a periodic waveform voltage source (7), actively controlled resistor network (3), and a resistive sensor (5), wherein the terminals of the periodic waveform voltage source (7) are connected to node A (2) and C (6), terminals of actively controlled resistor network (3) are connected to node A (2) and B (4), and terminals of the resistive sensor are connected to node B (4) and C (6), thus forming a connection in a resistive voltage divider with an automatic selection of one resistor of the divider, and usage of this method for measuring time-varying resistance of the sensor.

Description

FIELD OF THE INVENTION

The invention relates to measuring resistance of a sensor, which is controlled by a resistive divider with an automatic selection of a resistor of the divider mostly for higher accuracy, rate and safety of the process.

STATE OF THE ART

Sensing of many physical and physico-chemical quantities (e.g. temperature, luminous flux, deformation, concentration) is done by resistive sensors, the value of resistance of the sensor being in certain causal relationship with the value of measured quantity. Different measuring methods for determining the resistance of the sensor are used. Basically, it is a connection of the sensor to a simple voltage divider with a resistor of a known resistance value, connection to a resistance bridge, measuring of voltage drop during the passage of a known forced current, and measuring or integration of the passing current with a known applied voltage. The selection of particular measuring method is done with respect to the required parameters of the resulting device, such as sensitivity, range of resistance values corresponding to the full range of values of the measured quantity, response rate, power consumption, simplicity, reliability, production costs, etc.

In terms of sensitivity and range, it is possible to roughly sort the sensors into two groups: (i) full range of values of the sensed quantity corresponds only to a small range of resistance of the sensor; (ii) full range of values of the sensed quantity corresponds to the change of resistance of the sensor by several orders of magnitude. Sensors in the first group are appropriately connected to a bridge arrangement. In case of sensors characterized in an order-of-magnitude change of resistance, it is preferred that the signal processing circuit allows a change of sensitivity according to the actual resistance value of the sensor. This ensures that measuring is done with sufficient resolution in the full range of values of resistance. If the output of the sensing circuit is the voltage magnitude (U_out), it is possible to define sensitivity (s) by the following relation:

$\begin{array}{cc}s\equiv -\frac{dU_{\mathrm{out}}}{dR_s}.& \left(1\right)\end{array}$

When connecting the sensor with resistance R_s to the voltage divider with a resistor R_d and applied voltage U_in, the following relation for sensitivity was derived:

$\begin{array}{cc}s=-R_dU_{\mathrm{in}}\frac{d}{dR_s}\left(\frac{1}{R_s+R_d}\right)=\frac{R_d}{{\left(R_s+R_d\right)}^2}U_{\mathrm{in}}.& \left(2\right)\end{array}$

Sensitivity, while connected to the divider, is highest for R_d=R_s and decreases to approximately a third of the highest value if the value of resistance of the resistor R_d is increased or decreased by one order of magnitude with constant resistance of the sensor R_s.

It is possible to define the resolution of measurement by minimal detectable relative change of resistance of the sensor (Δ_minR_s/R_s) corresponding to the minimal measurable said output voltage Δ_minU_out in given sensor connection. The quantity Δ_minR_s/R_s basically represents the minimal percentage change of resistance of the sensor perceptible by the given measuring device; the lower Δ_minR_s/R_s is, the higher is the resolution of measurement. Derivation of the relation for dependence of resolution on the ratio of resistance of the sensor R_s and the resistor of the divider R_d starts with the formula for output voltage when connecting the sensor to the voltage divider (FIG. 1):

$\begin{array}{cc}{U}_{out}=\frac{R_s}{R_d+R_s}U_{in},& \left(3\right)\end{array}$

where U_in is the voltage applied on the divider.

The difference of output voltage for two different values of resistance of the sensor R_s,1 and R_s,2 is

$\begin{array}{cc}\Delta U_{\mathrm{out}}=U_{\mathrm{out},2}-U_{\mathrm{out},1}=\left(\frac{R_{s,2}}{R_d+R_{s,2}}-\frac{R_{s,1}}{R_d+R_{s,1}}\right)U_{\mathrm{in}},& \left(4\right)\end{array}$

wherefrom the resistance of the sensor R_s,2 as a function R_s,t and ΔU_out can be derived:

$\begin{array}{cc}{R}_{s,2}=\frac{R_d^2+R_dR_{s,1}\left(\frac{U_{\mathrm{in}}}{\Delta U_{\mathrm{out}}}+1\right)}{R_d\left(\frac{U_{\mathrm{in}}}{\Delta U_{\mathrm{out}}}-1\right)-R_{s,1}}& \left(5\right)\end{array}$

and minimal detectable relative change of resistance of the sensor can be then represented as

$\begin{array}{cc}\frac{{\Delta }_{\min }R_s}{R_s}=\frac{R_{s,2}-R_{s,1}}{R_{s,1}}=\frac{{\left(\frac{R_d}{R_s}+1\right)}^2}{\frac{R_d}{R_s}\left(\frac{U_{\mathrm{in}}}{{\Delta }_{\min }U_{\mathrm{out}}}-1\right)-1}.& \left(6\right)\end{array}$

The relation stated above is valid under the condition that R_s,2→R_s,t (=R_s), i.e. for small changes of resistance in comparison with the total resistance of the sensor. The dependency of Δ_minR_s/R_s (in percentage) on the ratio R_d/R_s for U_in=1 V and Δ_minU_out=1 mV (approximately corresponds to measurement using a 10-bit ADC having the input range of 0-1 V) is shown in FIG. 2. It is obvious that the resolution of measurement is getting substantially worse if R_d and R_s differ by more than one order of magnitude.

Thus, it is necessary to choose the resistor of the divider with respect to the optimal sensitivity and resolution of measurement, which depends on resistance of the sensor. When the resistance of the sensor varies in a wide range, a single resistor may not be sufficient, and the measuring circuit must contain more resistors connected into the divider manually or by electronic selector according to the actual values of resistance of the sensor.

Especially in the case of high resistance of the sensor, and thus of the resistor of the divider as well (MΩ and higher), the measuring is complicated by electromagnetic interference (EMI) which is effectively captured by connecting conductors. EMI spreads through the space from sources such as electric wiring, switching power supplies, and all kinds of other electric and electronic devices. The effect of EMI can be limited by various means, e.g. by conductor and measuring equipment shielding or by increasing the applied voltage Um. However, depending on the required parameters of the device and circumstances of its usage, such means can be inappropriate. Shielding increases requirements for space and can complicate the installation of the sensor into the measured environment. Increase of the applied voltage (e.g. to dozens or hundreds of volts) limits the effect of EMI and, moreover, increases the resolution (for constant Δ_minU_out, see relation (6)). A disadvantage is the risk of facilitating electrochemical changes in the sensor (humidity sensors) and the necessity to provide corresponding power supply; an obstruction in this approach is that the maximum applied voltage of some types of sensors is limited.

Drawbacks of the state of the art include the necessity to shield electromagnetic interference caused by the presence of external electric fields for example of electrical wiring in walls, radiation of electronic devices in the environment. Negative result of usage of the high voltage is a possible damage to the sensor and decrease in safety while working with the measuring device. Present solutions do not offer a measuring device with high sensitivity as well as a wide range of resistance change of the sensor.

The aim of this invention is to determine resistance of the sensor in the wide range of values, with the option of automatic selection of sensitivity on the basis of the actual value of resistance of the sensor with the highest possible sampling rate and with the usage of low voltage.

SUMMARY OF THE INVENTION

The said drawbacks are eliminated by a new method of measuring resistance of the resistive sensor including the resistive sensor connected in series with an actively controlled resistor network (hereinafter only ACRN) and with a periodic waveform voltage source, wherein ACRN forms individual branches containing a resistor and a switching element, which can be a unipolar transistor. Individual branches, or rather resistors, are then connected into the circuit by means of switching elements, which causes the change of overall resistance of the divider, which is given by the value of resistances R0-Rn connected in parallel.

The voltage at the node between the resistive sensor and ACRN is a function of resistance of the resistive sensor, wherein this voltage is followed by an operational amplifier connected as voltage follower or by any other device enabling following of the voltage value.

The advantage of the invention lies in the high range of sensitivity of the measuring device due to the possibility of an order-of-magnitude change of the resistance by connecting individual branches of ACRN. Further advantage is the usage of alternating voltage with low amplitude which results in higher safety of work with the measuring device. Further, there is no risk of damaging the sensor by the effect of high voltage.

Preferably, it is possible to use series connection of two and more switching transistors in the branch of ACRN, which results in the increase of input resistance of the said branch, which then will not cause manifestations of parasitic resistance, unless it is connected into the circuit.

Further advantage of the invention is the suppression of parasitic capacitances between DRAIN and GATE electrodes of switching transistors, or between SOURCE and GATE electrodes of switching transistors, by means of superposition of the output of voltage follower on the GATE electrodes of switching transistors, which makes it possible to increase the used frequency of applied voltage and thus the response rate of the device.

In a preferred embodiment, the ACRN contains at least two branches connected in parallel. Preferably, values of resistance of branch resistors then form geometric series. This results in the increase of the range of sensitivity of the measuring device, which can be then used also when the resistance of the resistive sensor varies by several orders of magnitude.

Another advantage of the invention is the usage of analog or digital filter at the output of the operational amplifier, which passes only the frequency of voltage source, which removes disturbances by the effect of electromagnetic interference from external electric fields.

In a preferred embodiment, a branch resistor R0 is permanently connected in the actively controlled resistor network, wherein the value of resistance of this resistor is lower than the input impedance of the operational amplifier. In this embodiment, the maximum value of the overall resistance of ACRN is then given by the value of resistance of the branch resistor R0.

Basically, the invention can be made in two embodiments. In the first embodiment, the branches of the actively controlled resistor network are connected in parallel to the permanently connected ballast resistor R0; hence it is possible to achieve switching of individual branches independently. Due to that it is then possible to obtain more variability in the values of the overall resistance of the actively controlled resistor network. In the second embodiment, the individual branches are connected in parallel to the branch resistor of the preceding branch. In this embodiment, the branches can be switched on only if all the preceding branches are switched on.

In a preferred embodiment, the resistive sensor and the actively controlled resistor network are connected by a shielded cable, wherein the non-inverting input of the operational amplifier is connected to the shielded cable and its shielding layer to the output of the operational amplifier. With such connection, the effect of electromagnetic interference is suppressed and at the same time the undesired effect of a parasitic capacitance of the shielded cable is eliminated.

DESCRIPTION OF THE DRAWINGS

The invention is further clarified by means of exemplary embodiments, which are described by means of the attached drawings, where:

FIG. 1—is a schematic view of the connection of the resistive sensor into the voltage divider,

FIG. 2—is a dependency of a minimal detectable percentage change of resistance of the sensor on the ratio of resistances of the divider resistor and the sensor according to the relation (6),

FIG. 3—is a schematic view of the embodiment of the invention,

FIG. 4—is a schematic view of possible mutual arrangement of two branches of the actively controlled resistor network with a resistor (R) and a unipolar transistor (T),

FIG. 5—is an electric circuit diagram of a possible embodiment of the invention,

FIG. 6—is an electric circuit diagram of another possible embodiment of the invention,

FIG. 7—is a schematic view of the connection of an ACRN branch.

EXEMPLARY EMBODIMENT OF THE INVENTION

The basis of the invention is a voltage divider formed by the connection of the actively controlled resistor network 3 (referred to as ACRN) with two terminals between the nodes A 2 and B 4, and a sensor 5 between the nodes marked as B 4 and C 6, see FIG. 3. ACRN 3 includes an arrangement of two or more branches 10 that contain an element with defined resistance (resistor) and a switching element, which is a unipolar transistor. Preferably, the switching element is formed by series connection of multiple switching transistors T1. Two ways of mutual arrangement of two branches 10 in ACRN 3 are apparent from FIG. 4. If a variable arrangement of the resistor and the transistor is possible, it is marked in the diagram by a two-way arrow. Other branches 10 can be added to ACRN 3 in an analogous manner. Connection of a given branch resistor into the divider is carried out by switching on the switching transistors, which are between the branch resistor and the node A 2, or B 4. The immediate value of resistance between nodes A 2 and B 4 is further referred to as R_ACRN

It is preferred that the values of resistances of branch resistors in individual branches 10 form a geometric series which can provide, by appropriate connection of individual resistors, sufficient resolution of measurement in case there is a change of resistance of the sensor 5 by several orders of magnitude. Further, it is preferred that one branch 10 containing branch resistor R0 with the highest value of resistance (R_ACRN,max) does not contain a switching element and is thus included into the divider permanently. The resistance of switching elements in a switched-off state should be many times higher than the highest value of resistance of resistors in ACRN 3. For this purpose, it is possible to use series connection of multiple switching transistors T1.

Periodic waveform voltage u_in(t) is applied between the nodes A 2 and C 4. It is preferred to define one of the A 2 and C 6 as a common node, or a reference conductor, to consider its potential (V_A, V_C respectively) as being constant or zero (V_ref=V_A=0, or V_ref=V_C=0) and to relate all other potentials to that potential. The waveform of u_in(t) can be harmonic (sine) or other (rectangular, sawtooth, etc.). By means of the operational amplifier 9 connected as voltage follower, the potential waveform in the node B 4 is followed. The input impedance of the operational amplifier 9 should be many times higher than the maximum value of resistance of actively controlled resistor network 3 to prevent undesired load of the divider. The potential waveform at the output of the operational amplifier 9 (v_B(t)) then corresponds to the superposition of (i) applied voltage u_in(t) divided by the divider formed by the resistance of the sensor 5 R_S and the resistance of the actively controlled resistor network 3 R_ACRN and (ii) of potential induced as a result of EMI (v_EMI(t)):

$\begin{array}{cc}{v}_B\left(t\right)=\frac{R_{ARRS}}{R_s+R_{ARRS}}u_{in}\left(t\right)+v_{\mathrm{EMI}}\left(t\right)\mathrm{for}V_{ref}=V_A,& \left(7a\right)\\ V_B\left(t\right)=\frac{R_s}{R_s+R_{ARRS}}u_{in}\left(t\right)+v_{\mathrm{EMI}}\left(t\right)\mathrm{for}V_{ref}=V_C.& \left(7b\right)\end{array}$

Parasitic capacitances between GATE and DRAIN or SOURCE electrodes of transistors in ACRN 3 and the capacitance of the shielded cable 8, in case of its usage between the node B 4 and the sensor 5 together with resistors in the divider, form a low-pass filter which can decrease amplitude of the potential v_B(t) depending on the frequency of u_in(t). The elimination of this low-pass filter can be achieved by superposition of v_B(t) on the potential applied on GATE electrodes of switching transistors of the ACRN 3 and by applying v_B(t) on the shielding layer of the shielded cable 8, if used. Thus, it is ensured that the parasitic capacitors are charged by a source with low output impedance (operational amplifier 9) and that they do not load the voltage divider. If the potential of the GATE electrode causing switching on of a given transistor is referred as V_G, potential of the GATE electrode applied for the purpose of switching the transistor T1 off and on is referred to as V_off and V_on, respectively, it is necessary to ensure that

V _on +v _B(t)>V_G∧V_off+v_B(t)<V_G for transistors with N-channel

V _on +V _B(t)<V_G∧V_off+V_B(t)>V_G for transistors with P-channel.

Conditions mentioned above can be fulfilled by the selection of sufficiently low amplitude of u_in(t) and, in case of strong interference, the output of operational amplifier 9 can be subjected to filtration by an analog filter passing fully the frequency of u_in(t) and suppressing EMI frequencies.

A necessary prerequisite for determining the resistance of the sensor is elimination of the effect of EMI. The output of the operational amplifier 9 filtered by an analog or digital filter (v_B,f(t)) corresponds to the potential waveform in the node B 4 modified by the transfer function H of a given filter, i.e. after being introduced to the relations (7a) or (7b):

$\begin{array}{cc}{v}_{B,f}\left(t\right)=\frac{R_{ARRS}}{R_s+R_{ARRS}}H\left(u_{in}\left(t\right)\right)+H\left(v_{\mathrm{EMI}}\left(t\right)\right)\mathrm{for}V_{ref}=V_A& \left(8a\right)\\ v_{B,f}\left(t\right)=\frac{R_S}{R_s+R_{ARRS}}H\left(u_{in}\left(t\right)\right)+H\left(v_{\mathrm{EMI}}\left(t\right)\right)\mathrm{for}V_{ref}=V_C& \left(8b\right)\end{array}$

It is Preferred to Select the Filter so that H(v_EMI(t))=0 (Elimination of Effect of EMI); the following then applies:

$\begin{array}{cc}{v}_{B,f}\left(t\right)=\frac{R_{ARRS}}{R_s+R_{ARRS}}H\left(u_{in}\left(t\right)\right)\mathrm{for}V_{ref}=V_A& \left(9a\right)\\ v_{B,f}\left(t\right)=\frac{R_S}{R_s+R_{ARRS}}H\left(u_{in}\left(t\right)\right)\mathrm{for}V_{ref}=V_C& \left(9b\right)\end{array}$

On the basis of the relation (9a) or (9b), the knowledge of transmitting function of the filter H, and the currently set value of resistance ACRN 3 R_ACRN, it is possible to determine the resistance of the sensor 5 R_s.

An example of an embodiment of the invention is in FIG. 5. A harmonic voltage waveform with the amplitude of 300 mV and the frequency of 55 Hz is applied on the voltage divider formed by ACRN 3 and the resistor R_S (it simulates resistance of the sensor 5). The potential between ACRN 3 and R_S (with all potentials referred to the common node) is followed by the operational amplifier 9 with FET inputs connected as a voltage follower. ACRN 3 contains branch resistors R0-R3 connected in the way according to FIG. 4b. Triplets of switching MOFSET transistors T1-T3 connect the corresponding branch resistors R1-R3 in parallel to the permanently connected branch resistor R0 and thus change the resistance of ACRN 3. The potential applied to GATE electrodes of switching transistors T1 is selected by the potential applied on GATE electrodes of the auxiliary switching transistors TX1N and TX1P. If the common potential G1 of GATE electrodes of the first and the second auxiliary switching transistor TX1N and TX1P is higher than the threshold voltage of these auxiliary switching transistors (e.g. G1=+5 V), the second auxiliary switching transistor TX1N is opened and the first auxiliary switching transistor TX1P is closed. Then, the potential on GATE electrodes of switching transistors T1 has directly the output value of the operational amplifier 9 which can take up the value between +150 and −150 mV (voltage applied on the divider). These values are lower than the threshold voltage of switching transistors T1, which are thus closed, and the resistance of ACRN 3 is determined by the value of resistance of the permanently connected resistor R0.

In case that the common potential G1 of GATE electrodes of the first and the second switching transistor TX1N and TX1P is lower than the threshold voltage of these auxiliary switching transistors (e.g. 0 V), the second auxiliary switching transistor TX1N is closed and the first auxiliary switching transistor TX1P is opened. Then, the potential on GATE electrodes of switching transistors T1 has a DC component UP1 and an AC component determined by the output of the operational amplifier 9 which is provided by the second auxiliary resistor RX1 and the auxiliary capacitor CX1; an appropriate potential UP1 is selected (e.g. +5 V) so that the potential on GATE electrodes of switching transistors T1 has, in every time point, a higher value than the threshold value of the switching transistors T1 which are therefore opened. The resistance of ACRN 3 is determined by a parallel connection of the permanently connected branch resistor R0 and the branch resistor R1.

In an entirely analogous way, the branch resistors R2 and R3 are connected through common potentials of GATE electrodes of auxiliary switching transistors G2 or G3. To connect the branch resistor R2, it is necessary to connect the branch resistor R1 as well; analogously, to connect the branch resistor R3, it is necessary to connect the branch resistors R1 and R2 as well. The resistance of ACRN 3 for values of resistance of branch resistors R0-R3 shown in FIG. 5 depending on common potentials of GATE electrodes G1-G3 of the auxiliary switching transistors is shown in Table 1.

TABLE 1
G1 (V)	G2 (V)	G3 (V)	RACRN
+5	+5	+5	R0 = 100 MΩ
0	+5	+5	R0||R1 = 9,09 MΩ
0	0	+5	R0||R1||R2 = 1,06 MΩ
0	0	0	R0||R1||R2||R3 = 91,4 kΩ

Another option of the connection is shown in FIG. 6. ACRN 3 contains branch resistors R0-R3 connected according to FIG. 4a. Connection of the branch resistors is achieved by the method described above by means of common potentials of GATE electrodes of the auxiliary switching transistors G1 G3. Unlike in the previous arrangement (FIG. 5), it is possible to connect individual branch resistors independently of the connection of the other branch resistors. Resistance of ACRN 3 depending on the common potentials of GATE electrodes of the auxiliary switching transistors G1 G3 is, similarly as in the previous case, determined as the resistance of parallel connection of the connected branch resistors.

The shielded cable 8 is used to connect non-inverting input of the operational amplifier 9 and the resistive sensor 5. The output of the operational amplifier 9 is applied on the shielding layer of the shielded cable 8 for the purpose of suppressing the effect of capacitance of the shielded cable 8.

LIST OF REFERENCE SIGNS

• • 1—Reference Conductor
  • 2—Node A
  • 3—Actively Controlled Resistor Network
  • 4—Node B
  • 5—Resistive Sensor
  • 6—Node C
  • 7—Periodic Waveform Voltage Source
  • 8—Shielded Cable
  • 9—Operational Amplifier
  • 10—Branch of Actively Controlled Resistor Network
  • RD—Resistance of Divider
  • R0—Permanently Connected Branch Resistor
  • R1—Branch Resistor of the First Branch of ACRN
  • R2—Branch Resistor of the Second Branch of ACRN
  • R3—Branch Resistor of the Third Branch of ACRN
  • T1—Switching Transistor MOSFET of the First Branch of ACRN
  • T2—Switching Transistor MOSFET of the Second Branch of ACRN
  • T3—Switching Transistor MOSFET of the Third Branch of ACRN
  • RP1—First Auxiliary Resistor of the First Branch of ACRN
  • RP2—First Auxiliary Resistor of the Second Branch of ACRN
  • RP3—First Auxiliary Resistor of the Third Branch of ACRN
  • TX1—P First Auxiliary Switching Transistor MOSFET of the First Branch of ACRN
  • TX1—N Second Auxiliary Switching Transistor MOSFET of the First Branch of ACRN
  • TX2P—First Auxiliary Switching Transistor MOSFET of the Second Branch of ACRN
  • TX2N—Second Auxiliary Switching Transistor MOSFET of the Second Branch of ACRN
  • TX3P—First Auxiliary Switching Transistor MOSFET of the Third Branch of ACRN
  • TX3N—Second Auxiliary Switching Transistor MOSFET of the Third Branch of ACRN
  • G1—Common Potential of GATE Electrodes of the First and Second Auxiliary Switching Transistors of the First Branch of ACRN
  • G2—Common Potential of GATE Electrodes of the First and Second Auxiliary Switching Transistors of the Second Branch of ACRN
  • G3—Common Potential of GATE Electrodes of the First and Second Auxiliary Switching Transistors of the Third Branch of ACRN
  • RX1—Second Auxiliary Resistor of the First Branch of ACRN
  • RX2—Second Auxiliary Resistor of the Second Branch of ACRN
  • RX3—Second Auxiliary Resistor of the Third Branch of ACRN
  • CX1—Auxiliary Capacitor of the First Branch of ACRN
  • CX2—Auxiliary Capacitor of the Second Branch of ACRN
  • CX3—Auxiliary Capacitor of the Third Branch of ACRN
  • UP1—Auxiliary Potential of the First Branch of ACRN
  • UP2—Auxiliary Potential of the Second Branch of ACRN
  • UP3—Auxiliary Potential of the Third Branch of ACRN

Claims

1. Method of measuring resistance of a resistive sensor (5) characterized in that the value of resistance of the resistive sensor (5) is determined from series connection with an actively controlled resistor network (3) with selectable value of resistance and a periodic waveform voltage source (7), wherein the periodical voltage waveform is applied between nodes A (2) and C (6) from the periodic waveform voltage source (7), wherein the output potential at the node B (4) between the actively controlled resistor network (3) and the resistive sensor (5) is a function of resistance of the sensor (5).

2. Device for measuring resistance of the resistive sensor (5) including a periodic waveform voltage source (7), an actively controlled resistor network (3), and a resistive sensor (5) characterized in that terminals of the periodic waveform voltage source (7) are connected to the node A (2) and C (6), terminals of the actively controlled resistor network (3) are connected to the node A (2) and B (4), and terminals of the resistive sensor are connected to the node B (4) and C (6).

3. The device according to claim 2 characterized in that the non-inverting input of the operational amplifier (9) is connected to the node B (4), wherein the output of the operational amplifier (9) is connected to its inverting input.

4. The device according to claim 3 characterized in that the branch (10) of the actively controlled resistor network (3) contains the branch resistor (R1) with a defined value of resistance, connected in series with the switching transistor (T1), wherein the output of the operational amplifier (9) is superimposed on the GATE electrode of the switching transistor (T1).

5. The device according to claim 4 characterized in that the GATE electrode of the switching transistor (T1) is connected through the auxiliary resistor (RP1) to the connected DRAIN electrodes of the first auxiliary switching transistor (TX1P) and the second auxiliary switching transistor (TX1N), wherein the GATE electrodes of the first (TX1P) and the second (TX1N) auxiliary switching transistor are brought to the common potential (G1), wherein the SOURCE electrode of the first auxiliary switching transistor (TX1P) is, on one hand, connected through the second auxiliary resistor (RX1) to the auxiliary potential (UP1) and, on the other hand, through the auxiliary capacitor (CX1) connected to the output of the operating amplifier (9),and wherein the SOURCE electrode of the second auxiliary switching transistor (TX1N) is connected to the output of the operating amplifier (9).

6. The device according to claim 5 characterized in that it contains at least two branches (10) of the actively controlled resistor network (3).

7. The device according to any of the claims 2 to 6 characterized in that the actively controlled resistor network (3) contains a permanently connected branch resistor (R0).

8. The device according to claim 7 characterized in that it contains at least one branch (10) of the actively controlled resistor network (3) connected in parallel to the permanently connected branch resistor (R0).

9. The device according to any of the claims 2 to 8 characterized in that the values of resistance of branch resistors of branches of the actively controlled resistor network (3) form geometric series.

10. The device according to any of the claims 2 to 9 characterized in that the branch (10) of the actively controlled resistor network (3) contains at least two switching transistors (T1) connected in series.

11. The device according to any of the claims 2 to 10 characterized in that the second branch (10) of the actively controlled resistor network (3) with the branch resistor (R2) is connected in parallel to the branch resistor (R1) of the first branch (10) of the actively controlled resistor network (3).

12. The device according to any of the claims 2 to 11 characterized in that the input impedance of the operational amplifier (9) is higher than the value of resistance of the permanently connected branch resistor (R0).

13. The device according to any of claims 2 to 12 characterized in that the resistive sensor (5) and the actively controlled resistor network (3) are connected by a shielded cable (8).

14. The device according to claim 13 characterized in that the non-inverting input of the operational amplifier (9) is connected to the shielded cable (8) and the output of the operational amplifier (9) is connected to the shielding layer of the shielded cable (8).

15. The method of measuring resistance of the resistive sensor (5) according to claim 1 characterized in that the voltage of the periodic waveform voltage source (7) is in the form of a harmonic signal.

16. The method of measuring resistance of the resistive sensor (5) according to claim 1 characterized in that the voltage of the periodic waveform voltage source (7) is in the form of a rectangular signal or sawtooth signal or another periodical signal waveform.

17. The method of measuring resistance of the resistive sensor (5) according to any of the claims 1, 15 and 16 characterized in that the voltage of the periodic waveform voltage source (7) has, throughout the whole duration of the period, lower value than the threshold voltage of switching transistors (T1).

18. The method of measuring resistance of the resistive sensor (5) according to any of the claims 1, 15 to 17 characterized in that the voltage at the node B (4) is followed by the operational amplifier.

19. The method of measuring resistance of the resistive sensor (5) according to any of the claims 1, 15 to 18 characterized in that the output of the operational amplifier (9) is filtered by analog or digital filter passing only the frequency of the periodic waveform voltage source (7).