Claims
- 1. A method for producing a controlled atmosphere having an oxygen partial pressure of below 10−13 Pa and an operating temperature above 1000° C., comprising the following steps:venting a furnace by a gas mixture having an oxygen partial pressure lower than 10−8 Pa but higher than that of said controlled atmosphere, and submitting a partial volume of said furnace to a static electric field having a strength of at least 6 V/cm thereby reducing the oxygen partial pressure in this partial volume by orders of magnitude.
- 2. A device for producing a controlled atmosphere having an oxygen partial pressure of below 10−13 Pa and an operating temperature above 1000° C., comprising a furnace with inlets (2) and outlets (3) intended to vent said furnace with a gas mixture having an oxygen partial pressure lower than 10−8 Pa but higher than that of said controlled atmosphere, wherein two electrodes (4, 5) connected to a DC source are disposed inside said furnace to reduce the oxygen partial pressure in a partial volume of said furnace defined there-between.
- 3. A device according to claim 2, wherein the DC source is situated outside the furnace, and the electrodes (4, 5) are connected thereto via conductors (6, 7) made of SiC (silicon carbide).
- 4. A device according to claim 2, wherein the electrodes are plates facing each other and define said partial volume in the plate interspace.
- 5. A device according to claim 4, wherein the plates are shell-shaped, the concave sides facing each other.
- 6. A device according to claim 2, wherein the plates' main surface dimension is selected to be at least 1.5 times as large as the corresponding dimension of the required partial volume of said controlled atmosphere.
- 7. A device for producing a controlled atmosphere having an oxygen partial pressure of below 10−13 Pa and an operating temperature above 1000° C., comprising a furnace with inlets (2) and outlets (3) for venting said furnace with a gas mixture having an oxygen partial pressure lower than 10−8 Pa but higher than that of said controlled atmosphere, wherein the furnace contains a high frequency induction coil connected to a high frequency source, two shell-shaped susceptors (12, 13) having a high electrical conductivity and surrounding a partial volume of said furnace, and a body (14) disposed therebetween and made of a material having a reduced electrical conductivity with respect to the susceptors.
- 8. A device according to claim 7 wherein said body (14) is made of hot-pressed silicon nitride.
- 9. A device according to claim 7, wherein said body (14) is made of silicon carbide charged with silicon (SiSiC).
- 10. A system for producing a controlled atmosphere having an oxygen partial pressure of below 10−13 Pa and an operating temperature above 1000° C., comprising a furnace with inlets (2) and outlets (3) for venting said furnace with a gas mixture having an oxygen partial pressure lower than 1031 8 Pa but higher than said controlled atmosphere, wherein the furnace contains a high frequency induction coil connected to a high frequency source, two shell-shaped susceptors (12, 13) having a high electrical conductivity and surrounding a partial volume of said furnace, and, disposed therebetween, a sample (14) to be submitted to this controlled atmosphere and made of a material having a reduced electrical conductivity with respect to the susceptors.
Priority Claims (1)
Number |
Date |
Country |
Kind |
97111450 |
Jul 1997 |
EP |
|
Parent Case Info
This application is a 35 U.S.C. 371 National Stage filing of PCT/EP98/04155, filed Jul. 6, 1998.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
102e Date |
371c Date |
PCT/EP98/04155 |
|
WO |
00 |
1/7/2000 |
1/7/2000 |
Publishing Document |
Publishing Date |
Country |
Kind |
WO99/02978 |
1/21/1999 |
WO |
A |
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3732056 |
Eddy et al. |
May 1973 |
|
5340553 |
Huffman |
Aug 1994 |
|
Foreign Referenced Citations (3)
Number |
Date |
Country |
553 791 |
Aug 1993 |
EP |
56-12430 |
Feb 1981 |
JP |
7-254265 |
Oct 1995 |
JP |