Information
-
Patent Grant
-
6590372
-
Patent Number
6,590,372
-
Date Filed
Tuesday, February 19, 200222 years ago
-
Date Issued
Tuesday, July 8, 200321 years ago
-
Inventors
-
Original Assignees
-
Examiners
Agents
-
CPC
-
US Classifications
Field of Search
US
- 341 135
- 341 136
- 341 133
- 341 142
- 341 145
- 323 315
- 323 316
- 323 312
-
International Classifications
-
Abstract
An integrated circuit for generating a bandgap reference voltage (VBG) includes a first circuit and a second circuit. The first circuit includes an op-amp for equalizing emitter currents of a first bandgap transistor and a second bandgap transistor. The second circuit trims out error in at least one emitter current to achieve a desired frequency tolerance. The second circuit includes at least a single transistor digital to analog converter (DAC).
Description
This application relates to copending applications entitled “Method and Apparatus For Light to Frequency Conversion”, inventor William W. Wiles, Jr. (Attorney Docket 26783.18) and “Method and Integrated Circuit For Temperature Coefficient Compensation”, inventor William W. Wiles, Jr. (Attorney Docket 26783.20), filed concurrently herewith, assigned to the assignee of the present disclosure, and incorporated herein by reference.
BACKGROUND
The present invention relates generally to semiconductor devices, and more particularly, to a method and integrated circuit for bandgap trimming.
A number of optoelectronic systems applications require an accurate measurement of the intensity of a light beam or incident light, the measurement being performed over large ranges of input signal amplitude and wavelength. It is desired that the measurement accuracy be maintained over a wide range of environmental conditions. In addition, it is desired that the measurement be made in a minimal volume as dictated by packaging considerations and at a cost commensurate with consumer type systems.
Typical system requirements dictate that an incident light intensity needs to be converted to a digital form for use by a digital processor. To accomplish this, the light intensity is converted to an electrical form that can be digitized. For example, one technique applicable to sampled data processor systems includes converting the light intensity to a voltage that can be applied to an A/D Converter (ADC). This method however requires an additional analog block (i.e., the ADC), but can be used in those applications requiring a higher bandwidth. A second technique, applicable to very low bandwidth applications, includes directly converting the light intensity into a frequency that can be counted by a digital processor.
U.S. Pat. No. 5,850,195 entitled “MONOLITHIC LIGHT-TO-DIGITAL SIGNAL CONVERTER,” issued Dec. 15, 1998, discloses a converter having a switched capacitor oscillator in which the reference function is included in the oscillator circuit. The switched capacitor oscillator requires that calibration be accomplished by trimming the capacitors of the oscillator. However, the oscillator has a high level of parasitic capacitance which limits its high frequency performance. In addition, certain applications, including infrared incident intensity, for example, require a different temperature coefficient which cannot be implemented in an efficient manner in the oscillator circuit of the '195 converter.
It would be desirable to provide a method and integrated circuit for bandgap trimming for overcoming the problems in the art.
SUMMARY
According to one embodiment of the present disclosure, an integrated circuit for generating a bandgap reference voltage (VBG) includes a first circuit and a second circuit. The first circuit includes an op-amp for equalizing emitter currents of a first bandgap transistor and a second bandgap transistor. The second circuit trims out error in at least one emitter current to achieve a desired frequency tolerance. The second circuit includes at least a single transistor digital to analog converter (DAC). A method for generating a bandgap reference voltage (VBG) is also disclosed.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
is an electrical block diagram of a light-to-frequency converter according to one embodiment of the present disclosure;
FIG. 2
is an electrical block diagram of a current controlled oscillator of the light to frequency converter of
FIG. 1
, according to another embodiment of the present disclosure;
FIG. 3
is an electrical schematic diagram of the one shot circuit of the current controlled oscillator of
FIG. 2
;
FIG. 4
is an electrical schematic diagram of the non-overlapping clock generator of
FIG. 2
;
FIG. 5
is an electrical block diagram of the programmable gain amplifier of
FIG. 1
, according to one embodiment of the present disclosure;
FIG. 6
is an electrical schematic diagram of the decoder of
FIG. 5
;
FIG. 7
is an electrical schematic diagram of the temperature coefficient generator of
FIG. 1
;
FIG. 8
is an electrical schematic diagram of the current proportional to absolute temperature (IPTAT) current generator of
FIG. 7
;
FIG. 9
is an electrical block diagram of the trimmable bandgap generator of
FIG. 1
, according to one embodiment of the present disclosure;
FIG. 10
is an electrical schematic diagram of the bandgap trim DAC of
FIG. 9
;
FIG. 11
is an electrical block diagram of a current controlled oscillator of the light to frequency converter of
FIG. 1
, according to another embodiment of the present disclosure;
FIG. 12
is an electrical schematic diagram of a photodiode with current buffer of
FIG. 11
, according to another embodiment of the present disclosure;
FIG. 13
is an electrical block diagram of a plurality of photodiodes with current buffer of
FIG. 11
, according to another embodiment of the present disclosure;
FIG. 14
is an electrical schematic diagram of the diode multiplexer of
FIG. 13
, according to another embodiment of the present disclosure; and
FIG. 15
is a block diagram view of an apparatus including a light-to-frequency converter, according to another embodiment of the present disclosure.
DETAILED DESCRIPTION
With reference to
FIG. 1
, a light-to-frequency converter according to one embodiment of the present disclosure is referred to, in general, by the reference numeral
10
. The light-to-frequency converter
10
includes a current controlled oscillator (Oscillator)
12
, a programmable amplifier (PGA)
14
, a temperature coefficient generator (TC_Gen)
16
, and a bandgap voltage generator (Reference)
18
. Briefly, the bandgap voltage generator
18
outputs a bandgap reference voltage (VBG). Temperature coefficient generator
16
outputs the bandgap reference voltage with temperature coefficient compensation (VBG_TC), in response to receiving VBG on its input. Programmable gain amplifier
14
outputs an oscillator reference voltage (VREF) in response to VBG_TC. Lastly, current controlled oscillator
12
includes at least one photodiode
20
. In response to VREF, a photodiode control current, and a feedback current, the current controlled oscillator
12
produces an output signal having a frequency (F
O
) proportional to an intensity of incident light upon the photodiode, as will be discussed further below.
In one embodiment, the current controlled oscillator
12
includes a switching capacitor configured to provide a feedback current. With respect to the switched capacitor feedback current, the bandgap reference voltage with temperature coefficient compensation (VBG_TC) modifies a temperature coefficient of the feedback current to match a temperature coefficient of the photodiode control current.
Referring now to
FIG. 2
, according to one embodiment, the current controlled oscillator
12
includes at least one photodiode
20
, an integrator
22
, a comparator
24
, a one shot
26
, a non-overlapping clock generator
28
, and a switched capacitor resistor configuration
30
. Photodiode
20
provides a source of controlling current (I
D
). The control current (I
D
) is directly proportional to an intensity of light
32
incident on the diode
20
. Integrator
22
provides for the summing of the control current (I
D
) against a feedback current (I
R
). Switched capacitor resistor configuration
30
generates the feedback current (I
R
) with the application of VREF to the switched capacitor resistor operating at a frequency of operation (F
O
).
The switched capacitor resistor configuration
30
includes the switching capacitor (CQ) identified by reference numeral
34
and MOS switches (MN
2
-MN
5
) identified by reference numerals
36
,
38
,
40
, and
42
, respectively. Switched capacitor resistor configuration
30
has a first input coupled to a first non-overlapping clock output
50
of non-overlapping clock generator
28
, a second input coupled to a second non-overlapping clock output
52
of the non-overlapping clock generator
28
, and a voltage reference input coupled to the oscillator reference voltage (VREF), identified by reference numeral
92
. In one embodiment, switching capacitor (CQ)
34
includes a single untrimmed capacitor.
Responsive to the first, second, and voltage reference inputs, the switched capacitor resistor configuration
30
provides feedback current (I
R
) operating at the frequency of operation (F
O
). The frequency of operation (F
O
) is a function of the control current (I
D
), the oscillator reference voltage (VREF), and a capacitance of the switching capacitor (CQ).
Under steady state conditions, feedback current (I
R
) is equal to (VREF)(F
O
)(CQ). This results in the following expression for the frequency of operation:
F
O
=I
D
/(
VREF
)(
CQ
)
The current controlled oscillator
12
further includes a one-shot
26
responsive to a trigger input at
44
for providing a one-shot clock output at
46
. Responsive to the one-shot clock output at input
48
, the non-overlapping clock generator
28
provides non-overlapping clock signals, as further discussed below, on the first and second non-overlapping clock outputs,
50
and
52
, respectively.
Integrator
22
includes an op-amp (OA
1
)
54
and a feedback capacitor (C
1
)
56
, the feedback capacitor coupled between an inverting input
58
of op-amp (OA
1
)
54
and the output
60
of op-amp (OA
1
)
54
. In the embodiment of
FIG. 2
, the non-inverting input
62
of op-amp (OA
1
)
54
is coupled to ground potential. Integrator
22
integrates a sum of the control current (I
D
) and the feedback current (I
R
) to provide an output voltage V
X3
at
60
.
Comparator
24
includes an op-amp (CA
1
) with an inverting input
64
, a non-inverting input
66
, and an output
68
. Responsive to the reference voltage (VREF) coupled to the inverting input
64
and the integrator output
60
coupled to the non-inverting input
66
, comparator
24
provides a pulse signal output on
68
having a frequency of oscillation (F
O
) representative of the intensity of incident light. The pulse signal output
68
is further coupled to the trigger input
44
of the one-shot
26
.
Referring briefly to
FIG. 3
, one-shot
28
includes a NOR latch
70
having an input corresponding to the trigger input
44
. The NOR latch
70
furthermore has a first output
72
coupled to a MOS switch
74
and a second output
46
coupled to the clock input
48
of the non-overlapping clock generator
28
(FIG.
2
). The switch
74
is configured to discharge a capacitor
76
coupled to a non-inverting input
78
of a comparator (CA
3
)
80
. The comparator
80
outputs a reset signal input
82
to the NOR latch
70
in response to a voltage of the capacitor (C
1
)
76
reaching the level of a voltage across a resistor (R
1
)
84
. Resistor (R
1
)
84
is coupled to the inverting input
86
of the comparator
80
. Lastly, current sources (I
1
)
88
and (I
2
)
90
provide current to capacitor (C
1
)
76
and resistor (R
1
)
84
, respectively.
FIG. 4
is an electrical schematic diagram of the non-overlapping clock generator (NOL)
28
of FIG.
2
. Generator
28
provides a first non-overlapping clock output at
50
and a second non-overlapping clock output at
52
in response to a clock input at
48
. Non-overlapping clock generator
28
can include any suitable circuit configuration known in the art.
Current controlled oscillator
12
of
FIG. 2
operates as follows. Assume that the outputs of comparator (CA
1
)
24
and the one shot
26
are both low and that the photodiode current (I
D
) is applied to the integrator
22
. As noted above, integrator
22
includes operational amplifier (OA
1
)
54
and capacitor (CI)
56
. Accordingly, this results in the voltage (V
X3
) at
60
ramping positive. When V
X3
reaches VREF, comparator (CA
1
)
24
switches high and sets the NOR latch
70
in the one shot
26
(FIG.
3
). The first output
72
of the latch releases switch (MN
1
)
74
, while the other output
46
is applied to the input
48
of the non-overlapping clock generator (NOL) circuit
28
(FIG.
4
).
With the one shot output
46
initially low, NOL output (PH
2
)
52
is also low, holding switches (MN
2
)
36
and (MN
3
)
38
off while output (PH
1
B)
50
is high. Output (PH
1
B)
50
high turns switches (MN
4
)
40
and (MN
5
)
42
on, thus shorting both sides of capacitor (CQ)
34
to ground. Shorting both sides of capacitor (CQ)
34
to ground sets the capacitor charge to zero (0). When one shot output
46
(NOL input
48
) goes high, output (PH
1
B)
50
goes low initially. Output (PH
1
B)
50
going low turns off switches (MN
4
)
40
and (MN
5
)
42
. This is followed by output (PH
2
)
52
transitioning high.
Output (PH
2
)
50
transitioning high turns switches (MN
2
)
36
and (MN
3
)
38
ON. The switching ON of switches (MN
2
)
36
and (MN
3
)
38
injects a packet of charge equal to (VREF)*(CQ) into the summing node
58
and a current is caused to flow through the integrator capacitor (CI)
56
, driving V
X3
at
60
negative by an amount equal to (VREF)(CQ)/(CI). Accordingly, this results in the output voltage V
X3
at
60
having a sawtooth waveform, as shown in FIG.
2
. As the charge transfer is completed, V
X3
begins to ramp positive, eventually reaching VREF and the cycle repeats itself at a frequency proportional to the input control current (I
D
).
If perfect components were available, the V
X3
waveform would be the theoretical sawtooth and the one shot
26
would not be needed. However, parasitic switch resistances and a finite op-amp (OA
1
) bandwidth introduce a minimum time requirement for settling which is of paramount importance for accurate charge transfer. Since the comparator (CA
1
)
24
pulse width will be smaller than this minimum time, the need for a one shot is introduced to guarantee enough time for settling.
The one shot circuit of
FIG. 3
operates as follows. When the input signal (TRIGGER) at
44
goes high, it sets the NOR latch
70
, releasing switch (MN
1
)
74
and generates the output clock signal CLOCK at
46
. The voltage at node (Vc)
78
ramps positive until it reaches the voltage at node (Vr)
86
, i.e., equal to (
12
)(R
1
). At that time, (T=R
1
*C
1
*I
2
/I
1
), the comparator output
82
switches high, resetting the NOR latch
70
, which removes the CLOCK signal at
46
and discharges the capacitor
76
through switch (MN
1
)
74
. The one shot circuit
26
is then ready for the next input trigger at
44
.
As discussed above, the charge packet size (VREF)*(CQ) determines the frequency of oscillation (F
O
) that will occur for a given incident light intensity. To minimize the parasitics in the oscillator circuit
12
(which maximizes the operational frequency), oscillator
12
utilizes a single untrimmed capacitor (CQ)
34
. The problem that this introduces, however, is that the capacitor
34
usually has a significant tolerance associated with it and this tolerance is typically wider than the calibrated limits desired. Accordingly, to offset the capacitor tolerance, it is necessary to vary the reference voltage in a manner that doesn't affect the temperature stability of the reference.
To accomplish varying the reference voltage in a manner that doesn't affect the temperature stability of the reference, the light to frequency converter
10
includes programmable gain amplifier (PGA)
14
inserted between the actual reference
18
and the oscillator input VREF at
92
(FIG.
1
). The programmable gain amplifier
14
includes a standard non-inverting potentiometric configuration using discrete gain switches controlled, for example, by a 3 to 8 decoder. The gain range and the number of gain settings are determined by the initial capacitor tolerance and the final frequency tolerance requirement for a particular light-to-frequency converter application. Accordingly, the gain range and number of gain settings may vary from those described and shown herein.
Referring now to
FIG. 5
, in further detail, the programmable gain amplifier
14
includes an op-amp
94
having a non-inverting input
96
, an inverting input
98
, and an output
100
. The bandgap reference voltage with temperature coefficient compensation (VBG_TC) couples to the non-inverting input
96
. The inverting input
98
couples to the output
100
via a potentiometric configuration, generally indicated by reference numeral
102
. The potentiometric configuration
102
is adapted for selectively switching, via switches (MN
2
-MN
9
) generally indicated by reference numeral
104
, one of zero, one, and more than one resistor of a plurality of serially coupled resistors (R
1
-R
8
), generally indicated by reference numeral
106
, between the inverting input
98
and the output
100
.
With reference still to
FIG. 5
, the potentiometric configuration
102
further includes an m-to-n decoder
108
. The m-to-n decoder
108
includes m inputs (A
0
-A
2
), generally indicated by reference numeral
110
, and n outputs (Q
0
-Q
7
), generally indicated by reference numeral
112
. The m inputs (A
0
-A
2
)
110
are configured by input signals (G
0
-G
2
) for selecting a desired one of the n outputs (Q
0
-Q
7
)
112
. The n outputs (Q
0
-Q
7
)
112
are coupled to respective switches (MN
2
-MN
9
)
104
and configured to selectively switch none, one, and more than one resistor of the plurality of serially coupled resistors (R
1
-R
8
)
106
between the inverting input
98
and the output
100
. In one embodiment, the m-to-n decoder
108
includes a 3-to-8 decoder, such as shown in FIG.
6
.
One of the practical aspects of light intensity to current (frequency) conversion involves the temperature coefficient versus the wavelength of the incident light intensity. In the visible spectrum, the coefficient is very flat, but it increases for wavelengths in the infrared region. For that reason, it is desirable to be able to modify the temperature coefficient of the switched capacitor current injection to match the temperature coefficient of the photodiode current. This can be accomplished by altering the bandgap voltage (VBG) to a voltage where the desired temperature coefficient resides, but to attain the proper range of temperature coefficients would require a very large voltage deviation. This would place additional range constraints on the PGA
14
, or it would have to be compensated for by adding trim capability to the charge packet capacitor (CQ)
34
. Either of these alternative would drive the complexity of the system up and reduce the higher frequency performance due to additional parasitic elements.
Accordingly, to add temperature coefficient modification capability without altering the PGA
14
or oscillator
12
, the temperature generation circuit of
FIG. 7
has been placed between the bandgap reference generator
18
and the PGA
16
, such that:
VBG
—
TC=VBG+
(
IPTAT−IREF
)*
RTC.
Referring now to
FIG. 7
, the temperature coefficient generator
16
includes a circuit responsive to the bandgap reference voltage (VBG) at input
114
for generating a temperature stable reference current IRI-F equal to (VBG/RREF) via op-amp (OA
1
)
116
, resistor (RREF)
118
, and cascode transistor (MN
4
)
120
. The temperature coefficient generator
16
applies the temperature stable reference current (VBG/RREF) through a current mirror
122
to a current summing junction
124
of an op-amp (OA
2
)
126
. The current mirror
116
includes MOS devices (MP
2
)
128
and (MP
3
)
130
. The temperature coefficient generator
16
sums the temperature stable reference current against a current proportional to absolute temperature (IPTAT) and converts the summed current, via the bandgap reference voltage applied to the non-inverting input
132
of op-amp (OA
2
)
126
and a feedback resistor (RTC)
134
coupled between the inverting input
124
and the output
136
of op-amp (OA
2
)
126
, into the bandgap reference voltage with temperature coefficient compensation (VBG_TC) on output
136
.
The temperature coefficient generator
16
of
FIG. 7
further includes a generator
138
for providing the current proportional to absolute temperature (IPTAT). With reference now to
FIG. 8
, the generator
138
for providing the current proportional to absolute temperature (IPTAT) includes a circuit for deriving the current proportional to absolute temperature from matched emitter currents flowing in first and second transistors (QP
2
)
140
and (QP
3
)
142
, respectively, and described by the expression:
IPTAT=A
1*(
kT/q
)*
ln
(
A
2
/A
3)*(1
/R
1),
where A
1
is a current mirror gain provided by first and second output CMOS devices (MN
10
)
144
and (MN
20
)
146
, k is Boltzman's constant, T is absolute temperature, q is electronic charge, A
2
is the emitter area of transistor QP
2
, A
3
is the emitter area of transistor QP
3
, and R
1
is the resistance coupled to the emitter of transistor QP
2
.
In one embodiment, the value of the current proportional to absolute temperature (IPTAT) is set to match a reference current defined by the bandgap reference voltage divided by a reference resistance (VBG/RREF) at a temperature equal to 27 degrees Celsius (T=27° C.) such that the bandgap reference voltage with temperature coefficient compensation (VBG_TC) equals the bandgap reference voltage (VBG) at that temperature. The intrinsic temperature coefficient of this current can then be described by taking the derivative of the IPTAT expression, yielding:
∂
IPTAT/∂T=A
1*(
k/q
)*
ln
(
A
2
/A
3)*(1
/R
1),
which results in an output voltage temperature coefficient of:
∂
VBG
—
TC/∂T=A
1*(
k/q
)*
ln
(
A
2
/A
3)*(
RTC/R
1).
Accordingly, the temperature coefficient described can be controlled by the selection of resistor (RTC)
134
. Controlling the temperature coefficient by selecting a value for resistor (RTC)
134
(
FIG. 7
) allows for operation at optimum temperature coefficient (TC) levels in the infrared spectrum without placing additional constraints on a remainder of the circuit.
Referring now to
FIG. 9
, the bandgap reference voltage generator
18
of
FIG. 1
provides for temperature stability and shall now be described in further detail. The circuit of
FIG. 9
generates the bandgap reference voltage (VBG) at output
148
, in part, with the use of a standard Bandgap configuration which produces an ideal output of:
VBG=VBE+ΔVBE
(
R
2
/R
3),
where:
Δ
VBE
=(
kT/q
)*
ln
(
A
2
/A
1).
Bandgap reference voltage generator
18
includes a circuit having an op-amp (OA
1
)
150
for equalizing emitter currents of a first transistor (QP
1
) and a second transistor (QP
2
), indicated by reference numerals,
152
and
154
, respectively. However, the op-amp and transistor configuration is prone to offset errors, in addition to normal bandgap tolerances. The errors will modulate the ΔVBE term such that the total differential voltage (V
X
) is the sum of ΔVBE and an error term V
OS
according to:
V
X
=(
kT/q
)*
ln
(
A
2
/A
1)+
V
OS
.
Accordingly, the circuit of
FIG. 9
further includes means for trimming out the above-mentioned error to achieve desired calibrated frequency tolerances and temperature coefficients. The error includes, for example, an offset error V
OS
. In one embodiment, the means for trimming out error includes a transistor digital to analog converter (DAC)
156
configured to alter an effective emitter area of the first transistor (QP
1
)
152
for nulling the offset error, according to:
Δ
VBE
=(
kT/q
)*
ln
((
A
2
/A
1)±Δ
A
1)+V
OS
.
FIG. 10
is an electrical schematic diagram of the bandgap trim (DAC)
156
of
FIG. 9
in greater detail. The DAC
156
includes at least two inputs
158
and an output
160
. DAC
156
is responsive to the at least two inputs
158
for providing a voltage on the output
160
as a function of the at least two inputs. More particularly, DAC
156
provides a variable impedance from the output
160
to ground as a function of the at least two inputs
158
. The variable impedance varies the current flowing in the first and second bandgap transistors (
152
and
154
, respectively), which in turn, varies the bandgap output voltage (VBG) at output
148
.
In another embodiment, the trimming circuit and technique, as used in the embodiments of
FIGS. 9 and 10
, can also be used to trim any errors in the PTAT current flowing at T=27° C. in the embodiment of the IPTAT generator of FIG.
8
. For example, in a circuit for equalizing emitter currents of a first transistor and a second transistor, a second circuit is provided to trim out error in at least one emitter current to achieve a desired frequency tolerance. The second circuit includes at least a single transistor digital to analog converter (DAC). In one instance, the error may include an offset error and the DAC is configured to alter the effective emitter area of one of the transistors for nulling the offset error. Still further, the DAC includes at least two inputs and an output, the DAC responsive to the at least two inputs for providing a variable impedance from the output to ground as a function of the at least two inputs. Accordingly, the variable impedance will vary the current flowing in the first and second transistors.
As shown in
FIG. 2
, the oscillator configuration includes photodiode tied directly to the integrator summing junction. While this biases the diode at its optimum level (Vb=0), it is not practical due to the large value of parasitic capacitance of the photodiode and its effect on the high frequency operation of the oscillator. To alleviate this problem, in another embodiment, the light to frequency converter
10
includes a current controlled oscillator
12
A as shown in FIG.
11
. The current controlled oscillator
12
A of
FIG. 11
is similar to that shown in
FIG. 2
with the following exceptions. Current controlled oscillator
12
A includes a buffered current controlled oscillator. The buffered current controlled oscillator
12
A includes a current buffer
162
coupled between the at least one photodiode and a summing junction for isolating the control current I
D
. The consequence of this buffering is that an AC ground reference (VBIAS) must be moved positive or the oscillator has to be run from split power to keep the buffer circuit from saturating.
The buffered current controlled oscillator
12
A of
FIG. 11
further includes one-shot
26
responsive to a trigger input for providing a one-shot clock output. Non-overlapping clock generator
28
, responsive to the one-shot clock output
46
, provides a first non-overlapping clock output
50
and a second non-overlapping clock output
52
. Switched capacitor resistor configuration
30
includes the switching capacitor (CQ)
34
, having a first input coupled to the first non-overlapping clock output
50
, a second input coupled to the second non-overlapping clock output
52
, a voltage reference input coupled to the oscillator reference voltage (VREF)
100
, and a voltage bias ground reference (VBIAS) at
164
. The switched capacitor resistor configuration
30
is responsive to the first, second, and voltage reference inputs and the voltage bias ground reference for providing the feedback current operating at a frequency of operation (F
O
) at input
58
of integrator
22
. The frequency of operation (F
O
) is a function of the control current, the oscillator reference voltage (VREF), and a capacitance of the switching capacitor (CQ).
Furthermore, in the embodiment of
FIG. 11
, the integrator
22
includes an op-amp
54
having the control and feedback currents coupled to an inverting input
58
of the op-amp and the voltage bias ground reference
164
coupled to a non-inverting input
62
of the op-amp. The integrator
22
integrates a sum of the control current I
D
and the feedback current I
R
to provide an output voltage (V
X3
) at
60
. Comparator
24
is responsive to the reference voltage VREF coupled to the inverting input
64
and the integrator output
60
coupled to the non-inverting input
66
for providing a pulse signal output at
68
having a frequency of oscillation representative of the intensity of incident light. The pulse signal output at
68
is further coupled to the trigger input
44
of the one-shot
26
.
FIG. 12
illustrates an electrical schematic diagram of the photodiode
20
with the current buffer
162
of
FIG. 11
for isolating the photodiode, according to one embodiment of the present disclosure. In this embodiment, current buffer
162
includes op-amp (OA
2
)
166
and switch (MN
2
)
168
coupled to photodiode
20
, as shown in FIG.
12
.
FIG. 13
illustrates an electrical block diagram of a plurality of photodiodes with current buffer
162
of
FIG. 11
, according to another embodiment of the present disclosure. The at least one photodiode
20
includes a plurality of photodiodes
20
a
coupled to the current buffer via a multiplexer
170
. The multiplexer
170
is configured to multiplex a desired one of the plurality of photodiodes
20
a
to the current buffer
162
under digital control. Accordingly, the multiplexer
170
enables different photodiode currents to be input to the oscillator
12
a
. That is, the multiplexer switches photodiodes D
1
-D
4
in or out of the circuit under digital control.
FIG. 14
is an electrical schematic diagram of the diode multiplexer
170
of FIG.
13
.
Referring now to
FIG. 15
, a block diagram view of an apparatus having a light intensity control function according to another embodiment shall be discussed. The apparatus having a light intensity control function is generally indicated by the reference numeral
172
. Apparatus
172
includes a monolithic light to frequency converter
10
, as shown and described with respect to FIG.
1
and subsequent Figures. The apparatus further includes a controller
174
, such as a microprocessor, micro controller, computer, control logic circuitry, or the like for controlling a device parameter of device
176
. In one embodiment, the controller
174
is responsive to the output signal of the light-to-frequency converter
10
, the output signal having a frequency (F
O
) proportional to the intensity of the incident light
32
, for controlling the device parameter according to the particular requirement of apparatus
172
and/or device
176
application. In another embodiment, controller
174
may include any suitable control device, circuit, or processor for performing a desired functionality, as discussed herein.
For example, controller
174
provides light intensity information on output
178
in response to the output signal of the light to frequency converter
10
. Output
178
provides light intensity information according to the requirements of a particular light detector application. In addition, controller
174
may provide suitable control signals on control output
178
to device
176
, according to the requirements of the particular light intensity control application.
In one embodiment, controller
174
may also contain circuitry for conditioning the output of the light-to-frequency converter
10
and translating the results of the conditioned output into alternate forms of light intensity information. For example, conditioning may include averaging, or other conditioning suitable for a particular light intensity measurement application.
According to yet another embodiment, controller
174
further performs a translation of the conditioned output that includes, for example, arithmetic processing and use of a table look-up. The translation may be also be accomplished with at least one of hard-wired logic and stored program logic, such as via a microprocessor.
Device
176
may include any device responsive to a light intensity control signal for producing a desired response as a function of the intensity of light. An illustrative device may include a rear view mirror of an automobile, the rear view mirror for being controlled in a desired manner in response to a measure of the intensity of light by the light to frequency converter
10
, for example.
Device
176
may also include a display, such as for a laptop computer or other device, for example. Controlling the backlighting of the display screen according to the intensity of incident light on the laptop computer can facilitate improved power management, extending a useful battery life between recharging periods of the same. Other electronic devices, such as hand held electronic devices, capable of providing backlighting with an artificial illumination, are also contemplated.
In the example of the immediately preceding paragraph, controller
174
may include a means for controlling a display parameter in response to the measure of light intensity of the incident light. The display parameter may include any parameter to be controlled in response to the measure of light intensity of the incident light. The display parameter may include, for example, a backlight control parameter of the display device. The backlight control parameter may include a first level for the intensity of incident light and a second level for the intensity of incident light. The first and second levels can correspond, for example, to providing backlighting and providing no backlighting, respectively. The first and second levels may also include additional levels of light intensities, with corresponding control actions.
Although only a few exemplary embodiments of this invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without materially departing from the novel teachings and advantages of this invention. For example, the functionality of the various embodiments as discussed herein can be provided on a single monolithic integrated circuit. Accordingly, all such modifications are intended to be included within the scope of this invention as defined in the following claims. In the claims, means-plus-function clauses are intended to cover the structures described herein as performing the recited function and not only structural equivalents, but also equivalent structures.
Claims
- 1. An integrated circuit for generating a bandgap reference voltage (VBG), comprising:a first circuit having an op-amp for equalizing emitter currents of a first bandgap transistor and a second bandgap transistor; and a second circuit for trimming out error in at least one emitter current to achieve a desired frequency tolerance, said second circuit including at least a single transistor digital to analog converter (DAC).
- 2. The integrated circuit of claim 1, wherein the error includes an offset error, and wherein the DAC is configured to alter the effective emitter area of one of the bandgap transistors for nulling the offset error.
- 3. The integrated circuit of claim 2, wherein the DAC includes at least two inputs and an output, the DAC responsive to the at least two inputs for providing a variable impedance from the output to ground as a function of the at least two inputs which will vary the current flowing in the first and second bandgap transistors, which, in turn, will vary the bandgap reference voltage.
- 4. A method for generating a bandgap reference voltage (VBG) comprising:equalizing emitter currents of a first bandgap transistor and a second bandgap transistor, wherein equalizing emitter currents includes using an op-amp; and trimming out error in at least one emitter current to achieve a desired frequency tolerance, wherein trimming out error includes utilizing digital to analog conversion.
- 5. A method for generating a bandgap reference voltage (VBG) comprising:equalizing emitter currents of a first bandgap transistor and a second bandgap transistor; and trimming out error in at least one emitter current to achieve a desired frequency tolerance, wherein trimming out error includes utilizing digital to analog conversion, wherein the error includes an offset error, and wherein the trimming out error includes utilizing digital to analog conversion in a manner configured to alter an effective emitter area of the first bandgap transistor and null the offset error.
- 6. The method of claim 5, wherein the digital to analog conversion includes the use of a transistor digital to analog converter (DAC), the DAC including at least two inputs and an output, the DAC responsive to the at least two inputs for providing a variable impedance from the output to ground as a function of the at least two inputs which will vary current flowing in the first and second bandgap transistors, which, in turn, will vary the bandgap reference voltage.
- 7. An integrated circuit comprising:a bandgap reference voltage generator for generating a bandgap reference voltage (VBG), said bandgap reference voltage generator including a circuit having an op-amp for equalizing emitter currents of a first transistor and a second transistor; and means adapted to trim out an offset error between the emitter currents of the first and second transistors to achieve a desired frequency tolerance, wherein said offset error trimming means is configured to alter an effective emitter area of the first transistor for nulling the offset error.
- 8. The integrated circuit of claim 7, wherein said trimming means includes a transistor digital to analog converter (DAC).
- 9. The integrated circuit of claim 8, wherein the DAC includes at least two inputs and an output, the DAC responsive to the at least two inputs for providing a variable impedance from the output to ground as a function of the at least two inputs which will vary current flowing in the first and second transistors, which, in turn, will vary the bandgap reference voltage.
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Number |
Name |
Date |
Kind |
5850195 |
Berlien, Jr. et al. |
Dec 1998 |
A |
6075354 |
Smith et al. |
Jun 2000 |
A |