Method and Pd/V2 O5 device for H2 detection

Information

  • Patent Grant
  • 8084265
  • Patent Number
    8,084,265
  • Date Filed
    Monday, March 31, 2008
    16 years ago
  • Date Issued
    Tuesday, December 27, 2011
    13 years ago
Abstract
Methods and Pd/V2O5 devices for hydrogen detection are disclosed. An exemplary method of preparing an improved sensor for chemochromic detection of hydrogen gas over a wide response range exhibits stability during repeated coloring/bleaching cycles upon exposure and removal of hydrogen gas. The method may include providing a substrate. The method may also include depositing a V205 layer that functions as a H2 insertion host in a Pd/V205 hydrogen sensor to be formed on said substrate. The method may also include depositing a Pd layer onto said V205 layer; said Pd layer functioning as an optical modulator.
Description
BACKGROUND

The preferred embodiment relates to an ultra-stable vanadium oxide thin film structure for the detection of hydrogen gas. The hydrogen gas is dissociated on the Pd catalyst into H atoms, and the V2O5 layer on which the Pd is coated functions as a H+ insertion host. The Pd layer is thus stabilized, which upon combination with hydrogen is chemochromically changed.


Hydrogen is a plentiful, clean, non-polluting fuel. Hydrogen is currently used in many industries, and the US demand for hydrogen is approximately 140 billion cubic feet per year and growing. However, hydrogen is explosive at 4% in air. Therefore, it is critical to measure, monitor, and control hydrogen wherever it is used.


In the gas detection art where sensors and measurement instrumentation for hydrogen gases detect and/or measure hydrogen, typically there is required a portable sensing device, a kit (where hydrogen gas detection and/or measurement is required in existing equipment), and sensor heads installed at points where hydrogen leaks are possible, or where monitoring is necessary (i.e. in internal combustion engines which operate using hydrogen as a fuel).


The problems associated with current H2 detection devices is that these devices do not exhibit stable cycling during repeated coloring/bleaching processes and are encumbered by a narrow response range for detecting H2.


DESCRIPTION OF RELATED ART

At present, H2 detection may be accomplished through the use of various and sundry devices, including thin film Pd oxide devices. However, several problems or drawbacks are associated with the use of these hydrogen detecting devices. These problems are: they do not exhibit stable cycling during repeated coloring/bleaching processes; and, they are encumbered by a narrow response range for detecting hydrogen.


Inadequate cycling stability during coloring/bleaching processes and the narrow response range for detection of hydrogen gas, in the case of the Pd thin film is due to the fact that, in the presence of high concentrations of H2, palladium hydride is formed and the sensor is destroyed.


SUMMARY

One aspect of the preferred embodiment is to provide an ultra-stable palladium vanadium oxide film structure and method for chemochromic detection of hydrogen.


Another aspect of the preferred exemplary method is to provide an ultra-stable palladium vanadium oxide structure for chemochromic detection of hydrogen that exhibits stable cycling during repeated coloring/bleaching processes.


A further aspect of the preferred exemplary method is to provide an ultra-stable vanadium oxide film structure for chemochromic detection of hydrogen in which the proton insertion material contributes to stabilize the palladium layer, and exhibits a wider response range for detecting H2.


In general, the preferred exemplary method is accomplished by providing a palladium/vanadium oxide layer sensor device in which, a V2O5 thin film is coated on a transparent or glass substrate. Thereafter, a palladium layer is evaporated onto the V2O5 thin film. The palladium layer serves as a catalyst material that facilitates reaction with hydrogen gas. That is, the hydrogen gas is dissociated on the Pd catalyst into H atoms, which diffuse into the V2O5 film.


The vanadium oxide layer acts as a hydrogen insertion host while the palladium layer is responsible for optical modulation. The presence of an ion storage host is vital to the stability of the palladium layer, and the sensor formed therefrom exhibits a wide response range for detecting hydrogen and shows very stable cycling during repeated coloring/bleaching processes.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1A shows a hydrogen sensor comprising SiO2 deposited on a glass substrate, with Pd in turn deposited on the SiO2 layer in which the interface between the SiO2/Pd layer blocks the H2.



FIG. 1B shows a hydrogen sensor in which V2O5 is deposited on a glass substrate, with Pd in turn coated on the V2O5 layer in which the Pd/V2O5 interface does not block H2.



FIG. 2 is a graph showing percent relative transmission versus time for a 20 nm VOx/30 nmPd sensor in the presence of 4% hydrogen.



FIG. 3 is a graph showing percent transmission versus cycle number as a measure of cycling stability for a 20 nm VOx/30 nmPd sensor in an environment of 4% H2.





DESCRIPTION

Due to the fact that Pd/WO3 sensors are saturated in the presence of just 2% H2, and the fact that Pd sensors in the presence of H2 form palladium hydride that results in destruction of the sensor, there is a need in the interest of safety to provide a H2 sensor that still signals a chemochromic response to H2 over a wide response range and in excess of 2%.


A further need exists in the art of chemochromic detection of hydrogen for a sensor that exhibits stable chemochromic cycling during repeated coloring/bleaching processes upon exposure and removal of H2.


The Pd/V2O5 hydrogen sensor is capable of providing a response above the narrow range of 2% hydrogen because, unlike WO3, the V2O5 is not saturated as 2% H2 or higher.


While not wishing to be bound by any theory as to why the Pd/V2O5 sensor is capable of functioning beyond the H2 saturation point compared to a Pd/WO3 sensor, it is nevertheless believed that, the Pd/V2O5 sensor structure does not change the thermodynamics of the system, i.e., if fully equilibrated, the Pd still forms a hydride; however, when a kinetically steady state is achieved, the sensor still has the capacity to detect high concentrations of hydrogen even in a higher than normal atmospheric pressurized hydrogen atmosphere.


Reference is now made to FIG. 1A in which there is shown a sensor comprising a glass substrate 10 on which is coated SiO2, 11. A Pd layer 12 is coated onto the SiO2. In this sensor device, as is depicted by arrow 13 directed onto the interface designated by x between the SiO2 and Pd layers, H2 13 is blocked at the interface, because SiO2 cannot react with hydrogen. Pd hydride is formed that undergoes phase transition at hydrogen concentration higher than 4%, resulting in substantial volume change and failure of the sensor.


On the other hand and by contrast, in FIG. 1B in which a glass substrate 20 is coated with a V2O5 layer 21, which in turn is coated by a Pd layer 22, H2 23 is not blocked at the interface between V2O5 and Pd. Accordingly, the vanadium oxide layer acts as a hydrogen insertion host in the Pd/V2O5 hydrogen sensor, while the palladium layer is responsible for the optical modulation.


The presence of an ion storage host is vital is vital to the stability of the palladium layer, and, unlike the case, when SiO2 is used in conjunction with a Pd layer, the Pd layer does not peel off and is not degraded in the presence of 2% H2 (but actually starts forming hydride at room temperature in the presence of about 4% H2).


The insertion of hydrogen in the V2O5 is governed by the following equation:




embedded image


A control experiment was performed to show that the optical response was from the palladium layer.


The optical modulation is governed by the following equation:

(Pd+XH2)=PdH2x
(Less Transmissive)=(More Transmissive)


A hydrogen sensor of Pd/V2O5 was then prepared in which the V2O5=2014 Å and the Pd=31 Å.


A cathodic optical response of 2% transmittance change is observed, and this compels the conclusion that the Pd layer is contributing to the optical response of the sensor, but that the V2O5 layer acts as a non-coloring ion storage layer and operates to stabilize the entire chemochromic hydrogen detector structure.



FIG. 2 is a graph depicting percent relative transmission versus time for a 20 nm VO/30 nrn Pd hydrogen sensor when exposed to a 4% hydrogen environment, and subsequently exposed to air.


The cycling stability of a 20 nm VO/30 nrn Pd hydrogen sensor at 4% hydrogen is shown in the graph of transmission relative percent versus cycle number in FIG. 3, where excellent cycling stability is exhibited during repeated coloring/bleaching cycles. The difference of transmittance between bleached and colored curves does not decrease with cycling.


From the foregoing, it is apparent that ion insertion host capability of the vanadium oxide layer is necessary to obtain stable cycling, and that, in the absence of an ion insertion host (as in the case of SiO2) control experiment stable chemochromic cycling is not obtained due to the fact that palladium hydride is formed and the sensor is destroyed.


The Pd/V2O5 hydrogen sensor results show that: a proton insertion material is vital to stabilizing the palladium layer, although it does not contribute to the optical response; that the Pd/V2O5 hydrogen sensor is easy to make via thermal evaporation processes; and that a wide response range of between 1 to 100% H2 concentration is available for detecting hydrogen.

Claims
  • 1. An improved method of chemochromic detection of hydrogen gas over a wide range that exhibits stability during repeated coloring/bleaching cycles upon exposure and removal of hydrogen gas, comprising: subjecting a sensor structure comprising a substrate, a layer of V2O5 coated on said substrate, and about a 30 nm layer of palladium (Pd) coated on said layer of V2O5 to an environment
  • 2. The method of detection of claim 1 wherein the Pd/V2O5 structure is not saturated at 2% H2 or higher.
  • 3. The method of claim 2 wherein hydrogen gas over a wide range that exhibits stability during repeated coloring/bleaching cycles is between about 1 to about 100% H2 concentration.
  • 4. The method of claim 1 wherein said palladium layer is deposited by evaporation.
Priority Claims (1)
Number Date Country Kind
PCT/US01/14411 May 2001 WO international
CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims priority as a divisional of U.S. patent application Ser. No. 10/239,977, filed on Jan. 29, 2003 now U.S. Pat. No. 7,419,635 and entitled “Pd/V2O5 DEVICE FOR H2 DETECTION” by Ping Liu, hereby incorporated by reference as if fully set forth herein.

CONTRACTUAL AGREEMENT

The United States Government has rights in this invention under Contract No. DE-AC3699GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a division of the Midwest Research Institute.

US Referenced Citations (25)
Number Name Date Kind
4282272 Matsuhiro Aug 1981 A
4365870 Morita Dec 1982 A
4661320 Ito Apr 1987 A
4706493 Chang Nov 1987 A
4832468 Ito May 1989 A
4889414 Rauh Dec 1989 A
5105303 Ilhage Apr 1992 A
5252142 Matsuyama Oct 1993 A
RE34469 Cogan Dec 1993 E
5708735 Benson Jan 1998 A
5724187 Varaprasad Mar 1998 A
5777780 Terada Jul 1998 A
5831760 Hashimoto Nov 1998 A
5864994 Graf et al. Feb 1999 A
6020987 Baumann Feb 2000 A
6080998 Shima Jun 2000 A
6111684 Forgette Aug 2000 A
6277589 Seibert Aug 2001 B1
6293847 Easter Sep 2001 B1
6448068 Seibert Sep 2002 B2
6723566 Lee Apr 2004 B2
6859297 Lee Feb 2005 B2
7910373 Liu Mar 2011 B2
20030227664 Agrawal et al. Dec 2003 A1
20040023595 Ping et al. Feb 2004 A1
Foreign Referenced Citations (5)
Number Date Country
0730189 Sep 1996 EP
59180526 Oct 1984 JP
62257046 Sep 1987 JP
62257047 Sep 1987 JP
9606203 Feb 1996 WO
Related Publications (1)
Number Date Country
20090053822 A1 Feb 2009 US
Divisions (1)
Number Date Country
Parent 10239977 Jan 2003 US
Child 12059356 US