Method and post structures for interferometric modulation

Information

  • Patent Grant
  • 7719747
  • Patent Number
    7,719,747
  • Date Filed
    Monday, February 25, 2008
    16 years ago
  • Date Issued
    Tuesday, May 18, 2010
    14 years ago
Abstract
An interferometric modulator includes a post structure comprising an optical element. In a preferred embodiment, the optical element in the post structure is a reflective element, e.g., a mirror. In another embodiment, the optical element in the post structure is an etalon, e.g., a dark etalon. The optical element in the post structure may decrease the amount of light that would otherwise be retroreflected from the post structure. In various embodiments, the optical element in the post structure increases the brightness of the interferometric modulator by redirecting light into the interferometric cavity. For example, in certain embodiments, the optical element in the post structure increases the backlighting of the interferometric modulator.
Description
BACKGROUND

1. Field of the Invention


This invention relates generally to optical modulator devices and methods for making optical modulators, and more particularly to interferometric modulators used in displays.


2. Description of the Related Art


A variety of different types of spatial light modulators can be used for imaging applications. One type of a spatial light modulator is an interferometric modulator. Interferometric modulator devices can be arranged in an array configuration to provide a display assembly having advantageous operational and performance characteristics. Interferometric modulator devices operate by employing optical interference to provide displays having rich color characteristics as well as low power consumption. Interferometric modulators have at least two states and are configured such that, in at least one of the states, incident light is reflected and interferes to provide corresponding different appearances to a viewer. In one state, a relatively narrow band reflection may present a distinct color to the viewer, such as a red, green, or blue color. In another state, the interferometric modulator can act on the incident light so as to present a reflected dark or black appearance to a viewer.


In order to provide increased contrast in the various viewing states, it is desirable that an array of interferometric devices presents a more uniformly dark or black appearance in the dark state. Similarly, it is desirable in the colored viewing states to present colors which are richer and more vibrant.


SUMMARY

The system, method, and devices described herein each have several aspects, no single one of which is solely responsible for its desirable attributes. Without limiting the scope of this invention, its more prominent features will now be discussed briefly. After considering this discussion, and particularly after reading the section entitled “Detailed Description of Preferred Embodiments” one will understand how the features of the systems, methods and devices described herein provide advantages that include, for example, improved device performance.


An embodiment provides a spatial light modulator (e.g., an interferometric modulator) that includes a post structure, wherein the post structure contains an optical element. In a preferred embodiment, the optical element in the post structure is a reflective element, e.g., a mirror. In another embodiment, the optical element in the post structure is an etalon, e.g., a dark etalon. In another embodiment, the post structure comprises a reflective element and a dark etalon.


The optical element in the post structure may be configured in various ways. For example, in certain embodiments, the optical element in the post structure decreases the amount of light that would otherwise be retroreflected from the post structure. In other embodiments, the optical element in the post structure increases the backlighting of the interferometric modulator. In various embodiments, the optical element in the post structure increases the brightness of the interferometric modulator by redirecting light into the interferometric cavity.


Another embodiment provides a method for making an interferometric modulator. In this method, a reflective layer is deposited onto a substrate to form a first mirror. A sacrificial layer is deposited over the first mirror. Apertures are formed in the sacrificial layer and post material is deposited into the apertures. An optical element is formed over the post material and a moveable second mirror is formed over the sacrificial layer and the optical element. The sacrificial layer is removed to thereby form an interferometric cavity.


These and other embodiments are described in greater detail below.





BRIEF DESCRIPTION OF THE DRAWINGS

These and other aspects of the invention will be readily apparent from the following description and from the appended drawings (not to scale), which are meant to illustrate and not to limit the invention, and wherein:



FIG. 1 is an isometric view depicting a portion of one embodiment of an interferometric modulator display in which a movable reflective layer of a first interferometric modulator is in a released position and a movable reflective layer of a second interferometric modulator is in an actuated position.



FIG. 2 is a system block diagram illustrating one embodiment of an electronic device incorporating a 3×3 interferometric modulator display.



FIG. 3 is a diagram of movable mirror position versus applied voltage for one exemplary embodiment of an interferometric modulator of FIG. 1.



FIG. 4 is an illustration of a set of row and column voltages that may be used to drive an interferometric modulator display.



FIGS. 5A and 5B illustrate one exemplary timing diagram for row and column signals that may be used to write a frame of display data to the 3×3 interferometric modulator display of FIG. 2.



FIG. 6A is a cross section of the device of FIG. 1.



FIG. 6B is a cross section of an alternative embodiment of an interferometric modulator.



FIG. 6C is a cross section of another alternative embodiment of an interferometric modulator.



FIG. 7A shows a cross section of an interferometric modulator that schematically illustrates a post structure that is transparent. FIG. 7B shows a cross section of an interferometric modulator that schematically illustrates a post structure that is reflective.



FIG. 8A is a reproduction of a photomicrograph of an array of interferometric modulators having metal posts. FIG. 8B is a reproduction of a photomicrograph of an array of interferometric modulators having silicon oxide posts.



FIG. 9 shows a cross-section of an interferometric modulator that schematically illustrates post structures that comprise reflective elements, some of which form etalons.



FIG. 10 shows a cross-section of a backlit interferometric modulator schematically illustrating post structures that comprise reflective elements configured to direct light into the optical cavity of the interferometric modulator.



FIG. 11 shows a cross-section of a front lit interferometric modulator schematically illustrating post structures that comprise reflective elements configured to increase brightness of the interferometric modulator.



FIG. 12 shows a flow chart illustrating a process for making an interferometric modulator having a post structure that contains an optical element.





DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

As described more fully below, reflective optical elements may be included in post structures in interferometric modulators. In certain embodiments, these reflective optical elements may form etalons that reflect a particular color or wavelength range. Such etalons, which may comprise, for example, dark etalons, may cause the post structure to appear dark as seen by a viewer. These optical elements may increase the contrast of a display by providing a more uniformly dark or black appearance (reducing the area of the display that is relatively bright) when the interferometric modulator is in a dark state. Similarly, brighter more vibrant colors that are not “washed out” by bright regions are provided when the interferometric modulator is in a bright state. Reflective elements may also be included that direct illumination, either backlighting or front lighting, into the optical cavity of the interferometric modulator.


As will be apparent from the following description, the structures described herein may be implemented in any device that is configured to display an image, whether in motion (e.g., video) or stationary (e.g., still image), and whether textual or pictorial. More particularly, it is contemplated that the structures and methods may be implemented in or associated with a variety of electronic devices such as, but not limited to, mobile telephones, wireless devices, personal data assistants (PDAs), hand-held or portable computers, GPS receivers/navigators, cameras, MP3 players, camcorders, game consoles, wrist watches, clocks, calculators, television monitors, flat panel displays, computer monitors, auto displays (e.g., odometer display, etc.), cockpit controls and/or displays, display of camera views (e.g., display of a rear view camera in a vehicle), electronic photographs, electronic billboards or signs, projectors, architectural structures (e.g., tile layouts), packaging, and aesthetic structures (e.g., display of images on a piece of jewelry). More generally, the structures and methods described herein may be implemented in electronic switching devices, their manufacture, and use.


The following detailed description is directed to certain specific embodiments of the invention. However, the invention can be embodied in a multitude of different ways. In this description, reference is made to the drawings wherein like parts are designated with like numerals throughout.


One interferometric modulator display embodiment comprising an interferometric MEMS display element is illustrated in FIG. 1. In these devices, the pixels are in either a bright or dark state. In the bright (“on” or “open”) state, the display element reflects a large portion of incident visible light to a user. When in the dark (“off” or “closed”) state, the display element reflects little incident visible light to the user. Depending on the embodiment, the light reflectance properties of the “on” and “off” states may be reversed. MEMS pixels can be configured to reflect predominantly at selected colors, allowing for a color display in addition to black and white.



FIG. 1 is an isometric view depicting two adjacent pixels in a series of pixels of a visual display, wherein each pixel comprises a MEMS interferometric modulator. In some embodiments, an interferometric modulator display comprises a row/column array of these interferometric modulators. Each interferometric modulator includes a pair of reflective layers positioned at a variable and controllable distance from each other to form a resonant optical cavity with at least one variable dimension. In one embodiment, one of the reflective layers may be moved between two positions. In the first position, referred to herein as the released state, the movable layer is positioned at a relatively large distance from a fixed partially reflective layer. In the second position, the movable layer is positioned more closely adjacent to the partially reflective layer. Incident light that reflects from the two layers interferes constructively or destructively depending on the position of the movable reflective layer, producing either an overall reflective or non-reflective state for each pixel.


The depicted portion of the pixel array in FIG. 1 includes two adjacent interferometric modulators 12a and 12b. In the interferometric modulator 12a on the left, a movable and highly reflective layer 14a is illustrated in a released position at a predetermined distance from a fixed partially reflective layer 16a. In the interferometric modulator 12b on the right, the movable highly reflective layer 14b is illustrated in an actuated position adjacent to the fixed partially reflective layer 16b.


The fixed layers 16a, 16b are electrically conductive, partially transparent and partially reflective, and may be fabricated, for example, by depositing one or more layers each of chromium and indium-tin-oxide onto a transparent substrate 20. The layers are patterned into parallel strips, and may form row electrodes in a display device as described further below. The movable layers 14a, 14b may be formed as a series of parallel strips of a deposited metal layer or layers (orthogonal to the row electrodes 16a, 16b) deposited on top of posts 18 and an intervening sacrificial material deposited between the posts 18. When the sacrificial material is etched away, the deformable metal layers are separated from the fixed metal layers by a defined air gap 19. A highly conductive and reflective material such as aluminum may be used for the deformable layers, and these strips may form column electrodes in a display device.


With no applied voltage, the cavity 19 remains between the layers 14a, 16a and the deformable layer is in a mechanically relaxed state as illustrated by the pixel 12a in FIG. 1. However, when a potential difference is applied to a selected row and column, the capacitor formed at the intersection of the row and column electrodes at the corresponding pixel becomes charged, and electrostatic forces pull the electrodes together. If the voltage is high enough, the movable layer is deformed and is forced against the fixed layer (a dielectric material which is not illustrated in this Figure may be deposited on the fixed layer to prevent shorting and control the separation distance) as illustrated by the pixel 12b on the right in FIG. 1. The behavior is the same regardless of the polarity of the applied potential difference. In this way, row/column actuation that can control the reflective vs. non-reflective pixel states is analogous in many ways to that used in conventional LCD and other display technologies.



FIGS. 2 through 5 illustrate one exemplary process and system for using an array of interferometric modulators in a display application. FIG. 2 is a system block diagram illustrating one embodiment of an electronic device that may incorporate aspects of the invention. In the exemplary embodiment, the electronic device includes a processor 21 which may be any general purpose single- or multi-chip microprocessor such as an ARM, Pentium®, Pentium II®, Pentium III®, Pentium IV®, Pentium® Pro, an 8051, a MIPS®, a Power PC®, an ALPHA®, or any special purpose microprocessor such as a digital signal processor, microcontroller, or a programmable gate array. As is conventional in the art, the processor 21 may be configured to execute one or more software modules. In addition to executing an operating system, the processor may be configured to execute one or more software applications, including a web browser, a telephone application, an email program, or any other software application.


In one embodiment, the processor 21 is also configured to communicate with an array controller 22. In one embodiment, the array controller 22 includes a row driver circuit 24 and a column driver circuit 26 that provide signals to a pixel array 30. The cross section of the array illustrated in FIG. 1 is shown by the lines 1-1 in FIG. 2. For MEMS interferometric modulators, the row/column actuation protocol may take advantage of a hysteresis property of these devices illustrated in FIG. 3. It may require, for example, a 10 volt potential difference to cause a movable layer to deform from the released state to the actuated state. However, when the voltage is reduced from that value, the movable layer maintains its state as the voltage drops back below 10 volts. In the exemplary embodiment of FIG. 3, the movable layer does not release completely until the voltage drops below 2 volts. There is thus a range of voltage, about 3 to 7 V in the example illustrated in FIG. 3, where there exists a window of applied voltage within which the device is stable in either the released or actuated state. This is referred to herein as the “hysteresis window” or “stability window.” For a display array having the hysteresis characteristics of FIG. 3, the row/column actuation protocol can be designed such that during row strobing, pixels in the strobed row that are to be actuated are exposed to a voltage difference of about 10 volts, and pixels that are to be released are exposed to a voltage difference of close to zero volts. After the strobe, the pixels are exposed to a steady state voltage difference of about 5 volts such that they remain in whatever state the row strobe put them in. After being written, each pixel sees a potential difference within the “stability window” of 3-7 volts in this example. This feature makes the pixel design illustrated in FIG. 1 stable under the same applied voltage conditions in either an actuated or released pre-existing state. Since each pixel of the interferometric modulator, whether in the actuated or released state, is essentially a capacitor formed by the fixed and moving reflective layers, this stable state can be held at a voltage within the hysteresis window with almost no power dissipation. Essentially no current flows into the pixel if the applied potential is fixed.


In typical applications, a display frame may be created by asserting the set of column electrodes in accordance with the desired set of actuated pixels in the first row. A row pulse is then applied to the row 1 electrode, actuating the pixels corresponding to the asserted column lines. The asserted set of column electrodes is then changed to correspond to the desired set of actuated pixels in the second row. A pulse is then applied to the row 2 electrode, actuating the appropriate pixels in row 2 in accordance with the asserted column electrodes. The row 1 pixels are unaffected by the row 2 pulse, and remain in the state they were set to during the row 1 pulse. This may be repeated for the entire series of rows in a sequential fashion to produce the frame. Generally, the frames are refreshed and/or updated with new display data by continually repeating this process at some desired number of frames per second. A wide variety of protocols for driving row and column electrodes of pixel arrays to produce display frames are also well known and may be used in conjunction with the present invention.



FIGS. 4 and 5 illustrate one possible actuation protocol for creating a display frame on the 3×3 array of FIG. 2. FIG. 4 illustrates a possible set of column and row voltage levels that may be used for pixels exhibiting the hysteresis curves of FIG. 3. In the FIG. 4 embodiment, actuating a pixel involves setting the appropriate column to −Vbias, and the appropriate row to +ΔV, which may correspond to −5 volts and +5 volts respectively Releasing the pixel is accomplished by setting the appropriate column to +Vbias, and the appropriate row to the same +ΔV, producing a zero volt potential difference across the pixel. In those rows where the row voltage is held at zero volts, the pixels are stable in whatever state they were originally in, regardless of whether the column is at +Vbias, or −Vbias.



FIG. 5B is a timing diagram showing a series of row and column signals applied to the 3×3 array of FIG. 2 which will result in the display arrangement illustrated in FIG. 5A, where actuated pixels are non-reflective. Prior to writing the frame illustrated in FIG. 5A, the pixels can be in any state, and in this example, all the rows are at 0 volts, and all the columns are at +5 volts. With these applied voltages, all pixels are stable in their existing actuated or released states.


In the FIG. 5A frame, pixels (1,1), (1,2), (2,2), (3,2) and (3,3) are actuated. To accomplish this, during a “line time” for row 1, columns 1 and 2 are set to −5 volts, and column 3 is set to +5 volts. This does not change the state of any pixels, because all the pixels remain in the 3-7 volt stability window. Row 1 is then strobed with a pulse that goes from 0, up to 5 volts, and back to zero. This actuates the (1,1) and (1,2) pixels and releases the (1,3) pixel. No other pixels in the array are affected. To set row 2 as desired, column 2 is set to −5 volts, and columns 1 and 3 are set to +5 volts. The same strobe applied to row 2 will then actuate pixel (2,2) and release pixels (2,1) and (2,3). Again, no other pixels of the array are affected. Row 3 is similarly set by setting columns 2 and 3 to −5 volts, and column 1 to +5 volts. The row 3 strobe sets the row 3 pixels as shown in FIG. 5A. After writing the frame, the row potentials are zero, and the column potentials can remain at either +5 or −5 volts, and the display is then stable in the arrangement of FIG. 5A. It will be appreciated that the same procedure can be employed for arrays of dozens or hundreds of rows and columns. It will also be appreciated that the timing, sequence, and levels of voltages used to perform row and column actuation can be varied widely within the general principles outlined above, and the above example is exemplary only, and any actuation voltage method can be used with the present invention.


The details of the structure of interferometric modulators that operate in accordance with the principles set forth above may vary widely. For example, FIGS. 6A-6C illustrate three different embodiments of the moving mirror structure. FIG. 6A is a cross section of the embodiment of FIG. 1, where a strip of metal material 14 is deposited on orthogonally extending supports 18. In FIG. 6B, the moveable reflective material 14 is attached to supports at the corners only, on tethers 32. In FIG. 6C, the moveable reflective material 14 is suspended from a deformable layer 34. This embodiment has benefits because the structural design and materials used for the reflective material 14 can be optimized with respect to the optical properties, and the structural design and materials used for the deformable layer 34 can be optimized with respect to desired mechanical properties. The production of various types of interferometric devices is described in a variety of published documents, including, for example, U.S. Published Application 2004/0051929. A wide variety of well known techniques may be used to produce the above described structures involving a series of material deposition, patterning, and etching steps.


Interferometric modulators of the general design discussed above comprise at least one post structure. (See, e.g., post 18 in FIGS. 1 and 6). A “post” or “post structure” is a structure located at the side or corner of an interferometric cavity (or between adjoining interferometric cavities) that supports an electrode (and/or mirror) and/or maintains or helps to maintain a desired distance between electrodes (and/or mirrors). Accordingly, the post structure may be adjacent an open region and may be an orthogonally extending support (e.g., support 18). As described above, the electrode or mirror supported by the post structure may comprise a flexible member that flexes in the open region in the interferometric modulator with application of an electric field in the cavity. Post structures typically have a width of about 3 to about 15 microns, although the width of the post structure may be outside this range. The shape of the post structure may vary as well. The post structure may have a height that corresponds approximately to the cavity height (e.g., the spacing between the upper and lower mirrors). The height of the post structure, however, may be larger or smaller. For example, the post structure may be formed on a layer of material or on a pedestal and thus be raised to a level above the lower mirror. Similarly, the post structure may extend to a height higher than the upper mirror or to a depth lower than the lower mirror. See, e.g., FIG. 6C which shows the upper mirror attached to an electrode supported by the post structure.


Post structures may be formed from various materials (e.g., metals, silicon oxide, metal oxides, polymers, etc.) having optical properties that may differ significantly from one another. It has been found that the configuration of the post structure and the material(s) from which it is constructed may significantly affect the performance of the interferometric modulator. For example, FIG. 7A shows a cross-section of an interferometric modulator that schematically illustrates a transparent post structure 305 and an interferometric cavity 310. Light entering through the substrate 315 and entering the post structure 305 may reflect from the upper mirror structure 320 and exit back through the substrate 315 as depicted by the series of arrows 325 in FIG. 7A. The optical characteristics of the post are largely uncontrolled and unlikely to be beneficial when the configuration of the post 305 and the material(s) from which it is made are selected for reasons unrelated to the optical characteristics of the reflected light depicted by the series of arrows 325.


As another example, FIG. 7B shows a cross-section of an interferometric modulator that schematically illustrates a reflective post structure 350 and an interferometric cavity 355. Light entering through the substrate 360 reflects from the base of the post 350 and exits back through the substrate 360 as depicted by the series of arrows 365 in FIG. 7B. As in FIG. 7A, the optical characteristics of the reflected light depicted by the series of arrows 365 are uncontrolled and unlikely to be beneficial.


As another example, FIG. 8A shows a photomicrograph of an array of interferometric modulators having metal posts. The bright spots 405 result from light reflecting from the bases of the metal posts. FIG. 8B shows a similar photomicrograph in which the dark spots 410 result from light passing through transparent silicon oxide posts. The color of the dark spots 410 is generally different from the light that exits from the interferometric modulators.


It has now been found that optical elements may be incorporated into the post structures of interferometric modulators in order to provide various desirable optical effects. In one embodiment, the optical element is a reflector. This reflector may have various configurations. For example, FIG. 9 shows a cross-section of an interferometric modulator that schematically illustrates post structures that comprise optical elements. In FIG. 9, a reflector 550 is fabricated within a transparent post structure 555. This reflector 550 has a reflective surface that reflects incoming light incident thereon. This reflector 550 may comprise a reflective material such as metal. The reflector 550 may be formed using semiconductor fabrication techniques, for example, by depositing silicon oxide as a lower post section 555A, then forming the reflector 550 comprising, e.g., metal, then depositing additional silicon oxide as an upper post section 555B. The optical element within the post structure may also be a reflector that is a component of an etalon (Fabry-Perot interferometer), e.g., an etalon 565 formed by an upper metal reflector 570 and the reflector 575. The etalon 565 forms an optical cavity (a Fabry-Perot cavity) that contains the post structure material(s), e.g., silicon oxide. The color of reflected light 580 exiting the etalon 565 may be controlled by controlling the vertical position of the reflector 570 within the post structure 585 (as well as the material between the reflectors 570 and 575). The color of the reflected light 580 may be adjusted to produce a black appearance by adjusting the vertical position of the reflector so that substantially all of the incident light or visible incident light is absorbed or is not reflected back toward a viewer, thereby producing a dark etalon. An etalon 588 (e.g., a dark or colored etalon) may also be incorporated into a post structure by incorporating two metal reflector layers 590, 592 into the post structure as illustrated in FIG. 9. The color of the etalon 588 may be adjusted by controlling the thickness of the post material 591 between the reflector layers.


The reflectors 550, 570, 590 and 592 are depicted in FIG. 9 as having reflective surfaces that are substantially parallel to the reflector 575. Those skilled in the art will understand that optical elements such as reflectors may be oriented at various angles and configured in various shapes. FIG. 10 shows additional examples of optical elements that may be incorporated into the post structures of interferometric modulators. In FIG. 10, reflectors 605, 610, 615, 620 have been fabricated within post structures 606, 611, 616, 621 using semiconductor fabrication techniques. The surfaces of the reflectors 605, 610, 615, 620 are inclined at various angles. Optical elements having angled surfaces may be fabricated using various techniques known to those skilled in the art. Such techniques include, for example, tapered angle etching (see, e.g., U.S. Pat. No. 5,473,710). On the left side of FIG. 10, the upper mirror 625 is in a raised position. Light from a backlight source 630 is reflected from the inclined surfaces of the reflectors 605, 610 to the upper mirror 625 as indicated by the series of arrows 635. Thus, the reflectors 605, 610 are examples of optical elements configured to direct light into the interferometric cavity 623. The directed light also reflects from the upper mirror 625 and exits as indicated by the arrows 626, thereby increasing the brightness of the interferometric modulator.


On the right side of FIG. 10, the upper mirror 650 is in a lowered position. Light from the backlight source 660 is reflected from the inclined surfaces of the reflectors 615, 620 generally back towards the source 660 (instead of through the post structure) as indicated by the series of arrows 665. FIG. 10 also illustrates a dark etalon 673 formed by incorporating two metal reflectors 671, 672 into the post structure 621 that includes reflector 620. Thus, FIG. 10 illustrates the use of optical elements within post structures to control backlighting and the incorporation of multiple optical elements into the same post structure. Those skilled in the art will appreciate that FIG. 10 illustrates that the performance of an optical element in a post structure may vary depending on the state (e.g., driven or undriven) of a nearby interferometric modulator.



FIG. 11 illustrates the use of an optical element in a post structure to increase the brightness of an interferometric modulator by redirecting light coming from the front of the interferometric modulator into the interferometric cavity. On the left side of FIG. 11, the upper mirror 705 is in a raised position. A series of arrows 710 represents light coming from a front source 702 that enters a post structure 715, reflects from an angled reflector 720 to the upper mirror 705, and then exits the interferometric cavity 725 back in the general direction of the source 702, thereby increasing brightness. On the right side of FIG. 11, the upper mirror 750 is in a lowered position, and a similar configuration is used to increase black level by redirecting light (represented by a series of arrows 755) away from the source 703. Thus light from the front source 703 reflects from the angled surface of the reflector 760 and exits the back side of the interferometric cavity 765 in a direction generally away from the source 703.


Those skilled in the art will understand that various optical elements 780 having a variety of configurations may be incorporated into post structures. Non-limiting examples of such optical elements 780 include reflectors 720 and 760 etalons, light scattering elements (such as microscopic glass particles), light diffracting elements, total internal reflection (TIR) elements, and refractive elements. Lenses 786a, 786b, 786c and prisms 784 are possible, as schematically illustrated in the exploded inset 782 of FIG. 11. The surfaces of the optical elements 780, such as the surfaces of the reflectors, may be curved (e.g., spherical or parabolic) or flat, and inclined or declined at various angles. Likewise, lenses 786a, 786b, 786c may be configured in various ways, e.g., convex as illustrated by the lenses 786a, 786b, concave as illustrated by the lens 786c, etc., and also may be inclined or declined at various angles within the post structure. Asymmetrical as well as symmetrical shapes and configurations are possible. These surfaces of the optical elements may be smooth or rough. Reflection may be specular or diffuse. The optical elements may be located in different positions in the post structure. The optical element may be located at different heights and may be off-center within the post. The optical element may have different orientations and may be tilted. Different posts structures may have optical elements with different characteristics.


Another embodiment provides a method for making an interferometric modulator. The steps in such a method 800 (FIG. 12) may be carried out using techniques known to those skilled in the art. The process begins at step 805 by depositing a reflective layer onto a substrate to form a first mirror. The deposition of the reflective layer may be conducted by, e.g., chemical vapor deposition of a semi-reflective material such as a metal (e.g., indium tin oxide and/or chrome). The formation of the first mirror at step 805 may further comprise depositing a dielectric material (e.g., silicon oxide) over the metal layer. Those skilled in the art will understand that the first mirror may be an optical stack, and thus formation of the first mirror at step 805 may involve depositing multiple metal layers, e.g., chrome and indium tin oxide.


The process continues at step 810 by depositing a sacrificial layer over the first mirror. The deposition of the sacrificial layer may be conducted by, e.g., chemical vapor deposition of a material that may be selectively removed in a later etching step. Examples of such sacrificial materials include molybdenum and silicon. The process continues at step 815 by forming apertures in the sacrificial layer using masking and etching techniques known to those skilled in the art. The process continues at step 820 by depositing post material into the apertures. Post material that is optically transmissive to visible light may be used. Examples of suitable post materials include silicon dioxide and photoresists, which may be deposited by, e.g., known spin-on and chemical vapor deposition techniques. In an embodiment, the deposited post material partially fills the apertures, depending on the desired vertical position of the optical element within the post. A layer of material for forming the optical element is deposited over the post material within the aperture in a subsequent step 825. Various known deposition and/or patterning methods (such as tapered etching for angled surfaces) may be used to form the optical element. Optionally, additional post material may be deposited over the optical element within the aperture.


The process continues at step 830 by forming a moveable second mirror over the sacrificial layer and the optical element. The formation of the moveable second mirror may be conducted in various ways, depending on the desired mirror configuration as discussed above. The process continues at step 835 by removing the sacrificial layer to thereby form an interferometric cavity. Various etching methods may be used to efficiently remove the sacrificial layer, e.g., by exposing the sacrificial layer to an etchant such as XeF2 that selectively removes sacrificial materials such as molybdenum and silicon. Those skilled in the art will understand that the process illustrated in FIG. 12 may be modified as needed to produce interferometric modulators having a variety of configurations.


Those skilled in the art will appreciate that a post structure may contain a plurality of optical elements. For examples, two or more reflectors may be fabricated into a post structures at various heights using minor modifications of the fabrication methods described above. Those skilled in the art will also appreciate that the use of such a plurality of optical elements in a post structure may be used to provide various optical benefits or combinations thereof, e.g., a wider variety of colors than the use of a single optical element.


While the above detailed description has shown, described, and pointed out novel features of the invention as applied to various embodiments, it will be understood that various omissions, substitutions, and changes in the form and details of the device or process illustrated may be made by those skilled in the art without departing from the spirit of the invention. As will be recognized, the present invention may be embodied within a form that does not provide all of the features and benefits set forth herein, as some features may be used or practiced separately from others.

Claims
  • 1. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element,wherein the optical element is disposed at a height between the first reflective surface and the second reflective surface.
  • 2. The interferometric modulator of claim 1, wherein surfaces of the optical element are symmetrical.
  • 3. The interferometric modulator of claim 1, wherein surfaces of the optical element are smooth.
  • 4. The interferometric modulator of claim 1, wherein the optical element comprises a reflector having an inclined surface.
  • 5. The interferometric modulator of claim 1, wherein the optical element comprises a reflector having declined surface.
  • 6. The interferometric modulator of claim 1, wherein the optical element comprises a reflector having a flat surface.
  • 7. The interferometric modulator of claim 1, wherein the optical element comprises an etalon.
  • 8. The interferometric modulator of claim 1, wherein the optical element comprises a lens.
  • 9. The interferometric modulator of claim 1, wherein the optical element comprises a prism.
  • 10. The interferometric modulator of claim 1, wherein the optical element comprises a reflector.
  • 11. The interferometric modulator of claim 1, wherein the optical element comprises a specular reflector.
  • 12. The interferometric modulator of claim 1, wherein the optical element comprises a diffuse reflector.
  • 13. The interferometric modulator of claim 1, wherein the interferometric modulator comprises a reflective modulator.
  • 14. The interferometric modulator of claim 1, wherein the interferometric modulator comprises a MEMS interferometric modulator.
  • 15. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element,wherein the optical element comprises a lens or a prism.
  • 16. The interferometric modulator of claim 15, wherein the optical element comprises a lens.
  • 17. The interferometric modulator of claim 16, wherein at least one surface of the lens is convex.
  • 18. The interferometric modulator of claim 15, wherein the optical element comprises a prism.
  • 19. The interferometric modulator of claim 18, wherein surfaces of the prism are inclined with respect to the support structure.
  • 20. The interferometric modulator of claim 18, wherein surfaces of the prism are declined with respect to the support structure.
  • 21. The interferometric modulator of claim 15, wherein the interferometric modulator comprises a reflective modulator.
  • 22. The interferometric modulator of claim 15, wherein the interferometric modulator comprises a MEMS interferometric modulator.
  • 23. The interferometric modulator of claim 16, wherein at least one surface of the lens is concave.
  • 24. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element, wherein surfaces of the optical element are asymmetrical.
  • 25. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element, wherein surfaces of the optical element are rough.
  • 26. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element, wherein the optical element is configured to specularly reflect light.
  • 27. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element, wherein the optical element is configured to diffusely reflect light.
  • 28. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element, wherein the optical element is disposed off-center from the support pest-structure.
  • 29. An interferometric modulator array comprising: a first reflective surface over a substrate;a plurality of second reflective surfaces over the first reflective surface, each of the second reflective surfaces movable with respect to the first reflective surface; anda plurality of support structures each configured to at least partially support the second reflective surfaces, wherein at least some of the plurality of support structures comprise an optical element,wherein the optical element is disposed at a height between the first reflective surface and at least one of the plurality of second reflective surfaces.
  • 30. The interferometric modulator of claim 29, wherein the optical element comprises a lens.
  • 31. The interferometric modulator of claim 29, wherein the optical element comprises a prism.
  • 32. The interferometric modulator of claim 29, wherein the optical element comprises a reflector.
  • 33. The interferometric modulator of claim 29, wherein the optical element comprises an etalon.
  • 34. An interferometric modulator array comprising: a first reflective surface over a substrate;a plurality of second reflective surfaces over the first reflective surface, each of the second reflective surfaces movable with respect to the first reflective surface; anda plurality of support structures configured to at least partially support the second reflective surfaces, wherein at least some of the plurality of support structures each comprise an optical element, wherein some of the optical elements are different from others of the optical elements.
  • 35. The interferometric modulator array of claim 34, wherein heights of the some of the optical elements are different from heights of the other of the optical elements.
  • 36. An interferometric modulator array comprising: a first reflective surface over a substrate;a plurality of second reflective surfaces over the first reflective surface, each of the second reflective surfaces movable with respect to the first reflective surface; anda plurality of support structures configured to at least partially support the second reflective surfaces, wherein at least some of the plurality of support structures each comprise an optical element,wherein some of the optical elements comprise an etalon.
  • 37. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element, wherein the optical element comprises a light diffracting element, a scattering element, a total internal reflecting element, or a refractive element.
  • 38. The interferometric modulator of claim 37, wherein the optical element comprises a light diffracting element.
  • 39. The interferometric modulator of claim 37, wherein the optical element comprises a scattering element.
  • 40. The interferometric modulator of claim 37, wherein the optical element comprises a total internal reflecting element.
  • 41. The interferometric modulator of claim 37, wherein the optical element comprises a refractive element.
  • 42. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element, wherein the optical element is disposed above the first reflective surface.
  • 43. The interferometric modulator of claim 42, wherein the interferometric modulator comprises a reflective modulator.
  • 44. The interferometric modulator of claim 42, wherein the interferometric modulator comprises a MEMS interferometric modulator.
  • 45. An interferometric modulator comprising: a substrate;a first reflective surface over the substrate, the first reflective surface being at least partially reflective and at least partially transparent to light;a second reflective surface over the first reflective surface, the second reflective surface movable with respect to the first reflective surface; anda support structure configured to at least partially support the second reflective surface, the support structure comprising an optical element,wherein the optical element comprises an etalon.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 11/052,004, filed Feb. 4, 2005, which claims priority benefit under 35 U.S.C. §119(e) to U.S. Provisional Patent Application Ser. No. 60/613,471, filed Sep. 27, 2004, which are hereby incorporated by reference in their entireties.

US Referenced Citations (177)
Number Name Date Kind
3439973 Paul et al. Apr 1969 A
3886310 Guldberg et al. May 1975 A
3924929 Holmen Dec 1975 A
4287449 Takeda et al. Sep 1981 A
4421381 Ueda et al. Dec 1983 A
4441791 Horbeck Apr 1984 A
5142414 Koehler Aug 1992 A
5164858 Aguilera, Jr. et al. Nov 1992 A
5291314 Agranat Mar 1994 A
5326426 Tam et al. Jul 1994 A
5474865 Vasudev Dec 1995 A
5550373 Cole et al. Aug 1996 A
5579149 Moret et al. Nov 1996 A
5606441 Florence et al. Feb 1997 A
5638084 Kalt Jun 1997 A
5671994 Tai Sep 1997 A
5673128 Ohta et al. Sep 1997 A
5754260 Ooi May 1998 A
5815229 Shapiro et al. Sep 1998 A
5835255 Miles Nov 1998 A
5883684 Millikan Mar 1999 A
5886688 Fifield Mar 1999 A
5913594 Iimura Jun 1999 A
5914804 Goossen et al. Jun 1999 A
5920417 Johnson Jul 1999 A
5933183 Enomoto Aug 1999 A
5986796 Miles Nov 1999 A
5991073 Woodgate Nov 1999 A
6040937 Miles Mar 2000 A
6049317 Thompson et al. Apr 2000 A
6055090 Miles Apr 2000 A
6195196 Kimura et al. Feb 2001 B1
6199989 Maeda Mar 2001 B1
6273577 Goto Aug 2001 B1
6282010 Sulzbach et al. Aug 2001 B1
6285424 Yoshida Sep 2001 B1
6288824 Kastalsky Sep 2001 B1
6292504 Halmos Sep 2001 B1
6323923 Hoshino Nov 2001 B1
6342970 Sperger et al. Jan 2002 B1
6356378 Huibers Mar 2002 B1
6377233 Colgan et al. Apr 2002 B2
6381022 Zavracky et al. Apr 2002 B1
6448709 Chuang et al. Sep 2002 B1
6456279 Kubo Sep 2002 B1
6466354 Gudeman Oct 2002 B1
6518944 Doane Feb 2003 B1
6519073 Goossen Feb 2003 B1
6574033 Chui Jun 2003 B1
6597490 Tayebati Jul 2003 B2
6630786 Cummings et al. Oct 2003 B2
6636322 Terashita Oct 2003 B1
6642913 Kimura Nov 2003 B1
6650455 Miles Nov 2003 B2
6674562 Miles Jan 2004 B1
6680792 Miles Jan 2004 B2
6683693 O Tsuka et al. Jan 2004 B1
6741377 Miles May 2004 B2
6742907 Funamoto et al. Jun 2004 B2
6792293 Awan Sep 2004 B1
6794119 Miles Sep 2004 B2
6829258 Carlisle et al. Dec 2004 B1
6841787 Almogy Jan 2005 B2
6844953 Reboa Jan 2005 B2
6844959 Huibers Jan 2005 B2
6853418 Suzuki Feb 2005 B2
6879354 Sawayama Apr 2005 B1
6880959 Houston Apr 2005 B2
6882461 Tsai et al. Apr 2005 B1
6897855 Matthies May 2005 B1
6912022 Lin Jun 2005 B2
6930816 Mochizuki Aug 2005 B2
6967779 Fadel Nov 2005 B2
7002726 Patel Feb 2006 B2
7009754 Huibers Mar 2006 B2
7042643 Miles May 2006 B2
7072093 Piehl et al. Jul 2006 B2
7113339 Taguchi Sep 2006 B2
7123216 Miles Oct 2006 B1
7126738 Miles Oct 2006 B2
7138984 Miles Nov 2006 B1
7142347 Islam Nov 2006 B2
7161730 Floyd et al. Jan 2007 B2
7187489 Miles Mar 2007 B2
7218429 Batchko May 2007 B2
7342705 Chui Mar 2008 B2
7349139 Chui Mar 2008 B2
7349141 Tung Mar 2008 B2
7355780 Chui Apr 2008 B2
7389476 Senda Jun 2008 B2
7561323 Gally Jul 2009 B2
20010010630 Umemoto Aug 2001 A1
20010019479 Nakabayashi et al. Sep 2001 A1
20010022636 Yang Sep 2001 A1
20010049061 Nakagaki et al. Dec 2001 A1
20010055208 Kimura Dec 2001 A1
20020006036 Egawa Jan 2002 A1
20020024711 Miles Feb 2002 A1
20020044445 Bohler Apr 2002 A1
20020054424 Miles May 2002 A1
20020075555 Miles Jun 2002 A1
20020080465 Han Jun 2002 A1
20020106182 Kawashima Aug 2002 A1
20020126364 Miles Sep 2002 A1
20020149584 Simpson Oct 2002 A1
20020167730 Needham et al. Nov 2002 A1
20030012009 Suzuki Jan 2003 A1
20030016930 Inditsky Jan 2003 A1
20030043157 Miles Mar 2003 A1
20030095401 Hanson May 2003 A1
20030098957 Haldiman May 2003 A1
20030103344 Niida Jun 2003 A1
20030107692 Sekiguchi Jun 2003 A1
20030151821 Favalora et al. Aug 2003 A1
20030160919 Suzuki et al. Aug 2003 A1
20030161040 Ishii Aug 2003 A1
20030169385 Okuwaki Sep 2003 A1
20030193630 Chiou Oct 2003 A1
20030210222 Ogiwara et al. Nov 2003 A1
20030210363 Yasukawa et al. Nov 2003 A1
20030210367 Nakano Nov 2003 A1
20040001169 Saiki Jan 2004 A1
20040017599 Yang Jan 2004 A1
20040027315 Senda et al. Feb 2004 A1
20040027636 Miles Feb 2004 A1
20040051929 Sampsell et al. Mar 2004 A1
20040066477 Morimoto et al. Apr 2004 A1
20040070711 Wen et al. Apr 2004 A1
20040080807 Chen et al. Apr 2004 A1
20040080938 Holman et al. Apr 2004 A1
20040085748 Sugiura May 2004 A1
20040100796 Ward May 2004 A1
20040115339 Nobuyuki Jun 2004 A1
20040125048 Fukuda et al. Jul 2004 A1
20040125281 Lin et al. Jul 2004 A1
20040170373 Kim Sep 2004 A1
20040175577 Lin et al. Sep 2004 A1
20040217919 Pichl et al. Nov 2004 A1
20040218251 Piehl et al. Nov 2004 A1
20040218390 Holman et al. Nov 2004 A1
20050002082 Miles Jan 2005 A1
20050041175 Akiyama Feb 2005 A1
20050120553 Brown Jun 2005 A1
20050179977 Chui et al. Aug 2005 A1
20050195175 Anderson Sep 2005 A1
20050195370 Gore et al. Sep 2005 A1
20050225686 Brummack Oct 2005 A1
20050231977 Hayakawa Oct 2005 A1
20050248524 Feng Nov 2005 A1
20050259939 Rinko Nov 2005 A1
20050286113 Miles Dec 2005 A1
20060001942 Chui Jan 2006 A1
20060002141 Ouderkirk Jan 2006 A1
20060022966 Mar Feb 2006 A1
20060024017 Page Feb 2006 A1
20060044523 Teijido Mar 2006 A1
20060050032 Gunner Mar 2006 A1
20060066541 Gally Mar 2006 A1
20060066783 Sampsell Mar 2006 A1
20060066935 Cummings et al. Mar 2006 A1
20060067600 Gally et al. Mar 2006 A1
20060067651 Chui Mar 2006 A1
20060077154 Gally et al. Apr 2006 A1
20060077509 Tung et al. Apr 2006 A1
20060077510 Chui et al. Apr 2006 A1
20060132383 Gally et al. Jun 2006 A1
20060198013 Sampsell Sep 2006 A1
20060209012 Hagood Sep 2006 A1
20060209384 Chui et al. Sep 2006 A1
20060209385 Liu et al. Sep 2006 A1
20070042524 Kogut Feb 2007 A1
20070196040 Wang et al. Aug 2007 A1
20070201234 Ottermann Aug 2007 A1
20080112039 Chui May 2008 A1
20080151347 Chui Jun 2008 A1
20080218834 Wang Sep 2008 A1
20090086301 Gally Apr 2009 A1
Foreign Referenced Citations (89)
Number Date Country
1158182 Aug 1997 CN
1381752 Nov 2002 CN
196 22 748 Dec 1997 DE
196 22 748 Dec 1997 DE
199 42 513 Mar 2001 DE
0590511 Apr 1994 EP
0822441 Feb 1998 EP
0855745 Jul 1998 EP
0 879 991 Nov 1998 EP
0 907 050 Apr 1999 EP
1014161 Jun 2000 EP
1089115 Apr 2001 EP
1 127 984 Aug 2001 EP
1251454 Apr 2002 EP
1251454 Apr 2002 EP
1271223 Jun 2002 EP
1 306 609 May 2003 EP
1 341 025 Sep 2003 EP
1389775 Feb 2004 EP
1 413 543 Apr 2004 EP
1450418 Aug 2004 EP
1519218 Mar 2005 EP
1 531 302 May 2005 EP
1 640 770 Mar 2006 EP
1 640 779 Mar 2006 EP
1640764 Mar 2006 EP
1640776 Mar 2006 EP
2 068 182 Jun 2009 EP
2278222 Nov 1994 GB
2321532 Jul 1998 GB
56 088111 Jul 1981 JP
60 147718 Aug 1985 JP
04 190323 Jul 1992 JP
04 238321 Aug 1992 JP
08 094992 Apr 1996 JP
09 068722 Mar 1997 JP
09 160032 Jun 1997 JP
09 311333 Dec 1997 JP
10 500224 Jan 1998 JP
11 002764 Jan 1999 JP
11 174234 Jul 1999 JP
11174234 Jul 1999 JP
11 211999 Aug 1999 JP
11 295725 Oct 1999 JP
2000 075293 Mar 2000 JP
2000 193933 Jul 2000 JP
2000 193933 Nov 2000 JP
2001 343514 Dec 2001 JP
2001343514 Dec 2001 JP
2002-523798 Jul 2002 JP
2002 245835 Aug 2002 JP
2002-245835 Dec 2002 JP
2003 131215 May 2003 JP
2003-131215 May 2003 JP
2003 173713 Jun 2003 JP
2003-188959 Jul 2003 JP
2003 188959 Jul 2003 JP
2003-315694 Nov 2003 JP
2003-29769 Mar 2002 KR
594155 Jun 2004 TW
WO 9501584 Jan 1995 WO
WO 9530924 May 1995 WO
WO 9608833 Mar 1996 WO
WO 9717628 May 1997 WO
WO 9744707 Nov 1997 WO
WO 9819201 May 1998 WO
WO 0011502 Mar 2000 WO
WO 0181994 Nov 2001 WO
WO 0184228 Nov 2001 WO
WO 0184229 Nov 2001 WO
WO 02071132 Sep 2002 WO
WO 02097324 Dec 2002 WO
WO 03007049 Jan 2003 WO
WO 03105198 Jun 2003 WO
WO 03056876 Jul 2003 WO
WO 03075207 Sep 2003 WO
WO 2004006003 Jan 2004 WO
WO 2004027514 Apr 2004 WO
WO 2004003643 Aug 2004 WO
WO 2005076051 Aug 2005 WO
WO 2005093490 Oct 2005 WO
WO 2006036415 Apr 2006 WO
WO 2006036496 Apr 2006 WO
WO 2006036564 Apr 2006 WO
WO 2008039229 Apr 2008 WO
WO 2008045310 Apr 2008 WO
WO 2008045363 Apr 2008 WO
WO 2008045364 Apr 2008 WO
WO 2008109620 Sep 2008 WO
Related Publications (1)
Number Date Country
20080180777 A1 Jul 2008 US
Provisional Applications (1)
Number Date Country
60613471 Sep 2004 US
Continuations (1)
Number Date Country
Parent 11052004 Feb 2005 US
Child 12036958 US