The present invention is related to copending application “Structure for a Nitride Based Laser on an Insulating Substrate” by M. A. Kneissl, T. L. Paoli, D. P. Bour, N. M. Johnson, and J. Walker, Ser. No. 09/223,112, filed on the same day and assigned to the same assignee which is hereby incorporated by reference in its entirety.
The U.S. Government has a fully paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of contract no. 70NANB 2H-1241 awarded by the Department of Commerce.
Number | Name | Date | Kind |
---|---|---|---|
4531217 | Kitamura | Jul 1985 | A |
4881237 | Donnelly | Nov 1989 | A |
5001719 | Trussell | Mar 1991 | A |
5278435 | Vna Hove et al. | Jan 1994 | A |
5309470 | Groussin | May 1994 | A |
5404373 | Cheng | Apr 1995 | A |
5408742 | Zaidel et al. | Apr 1995 | A |
5550856 | Cheng | Aug 1996 | A |
5642373 | Kamizato et al. | Jun 1997 | A |
5666376 | Cheng | Sep 1997 | A |
5724376 | Kish, Jr. et al. | Mar 1998 | A |
6055262 | Cox et al. | Apr 2000 | A |
6058123 | Haase et al. | May 2000 | A |
6072818 | Hayakawa | Jun 2000 | A |
Entry |
---|
A. Kuramata, S. Kubota, R. Soejima, K. Domen, K. Horino and T. Tanahashi. “Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrat”. Japanese Journal of Applied Physics, vol. 37, Part 2, No. 11B, Nov. 15, 1998, pp. L1373-L1375. |
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho. “Continuous-wave operation of InGaN/GaN/AIGaN-based laser diodes grown on GaN substrates”. 0 Applied Physics Letters, vol. 72, No. 16, Apr. 10, 1998, pp. 2014-2016 |
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho. “InGaN/GaN/AIGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate”. Applied Physics Letters, vol. 72, No. 2, Jan. 12, 1998, pp. 211-213. |
S. Nakamura, G. Fasol. “Th Blue Laser Diode. GaN Based Light Emitters and Las rs.” Springer, 1997. pp. 34-47, 190-193 & 223-259. |