Method and system for quantizing an analog signal

Information

  • Patent Grant
  • 6509859
  • Patent Number
    6,509,859
  • Date Filed
    Wednesday, August 22, 2001
    23 years ago
  • Date Issued
    Tuesday, January 21, 2003
    22 years ago
Abstract
A system for quantizing an analog signal comprises a first negative-resistance device. The first negative-resistance device has a first terminal coupled through a capacitor to receive a clock signal and a second terminal coupled to receive an analog input signal. A second negative-resistance device has a first terminal coupled to receive the input signal and a second terminal coupled through a capacitor to receive an inverted clock signal. An output terminal is coupled to the second terminal of the first negative-resistance device and the first terminal of the second negative-resistance device. A quantized output signal is generated at the output terminal.
Description




TECHNICAL FIELD OF THE INVENTION




This invention relates generally to electronic quantizing and more particularly to a method and system for quantizing an analog signal utilizing a resonant tunneling diode pair with a capacitively-coupled clock.




BACKGROUND OF THE INVENTION




Analog-to-digital converters have been formed in a variety of architectures. Conventionally, these architectures have been implemented with transistors. For example, one common implementation includes a cross-coupled pair of transistors. However, there are several disadvantages associated with using transistors to implement an analog-to-digital converter.




First, electronic components used in digital circuits are becoming smaller. As these devices decrease in size, quantum mechanical effects begin to appear. The electrical properties of conventional transistors may be unacceptably altered by quantum mechanical effects. Secondly, a transistor-implemented analog-to-digital converter is limited by the switching speed of the transistors, which may be too slow for some applications. Finally, conventional transistors are limited to two stable states. Thus, systems using transistors typically only convert analog signals into binary digital signals, making the use of multi-valued logic difficult.




SUMMARY OF THE INVENTION




In accordance with the present invention, a method and system for quantizing an analog signal utilizing a resonant tunneling diode pair with a capacitively-coupled clock are provided that substantially eliminate or reduce the disadvantages or problems associated with previously developed quantizers.




In one embodiment of the present invention, a system for quantizing an analog signal is provided that comprises a first negative-resistance device. The first negative-resistance device has a first terminal coupled to receive a clock signal and a second terminal coupled to receive an analog input signal. A second negative-resistance device has a first terminal coupled to receive the input signal and a second terminal coupled to receive an inverted clock signal. An output terminal is coupled to the second terminal of the first negative-resistance device and the first terminal of the second negative-resistance device. A quantized output signal is generated at the output terminal.




Technical advantages of the present invention include providing an improved method and system for quantizing an analog signal. In particular, a negative-resistance element such as a resonant tunneling diode is included as a part of the analog-to-digital converter. Accordingly, reliance on transistors is avoided. As a result, the detrimental effects of quantum mechanics are minimized or not present, switching speed is increased, and use of multi-valued logic is possible. With resonant tunneling diodes, the effects of quantum mechanics are exploited to improve performance.




Other technical advantages of the present invention will be readily apparent to one skilled in the art from the following figures, descriptions, and claims.











BRIEF DESCRIPTION OF THE DRAWINGS




For a more complete understanding of the present invention and its advantages, reference is now made to the following description taken in conjunction with the accompanying drawings:





FIG. 1

is a schematic diagram of a resonant tunneling diode (RTD) for use as a negative-resistance element in accordance with the teachings of the present invention;





FIG. 2

is a graph of current as a function of voltage for the negative-resistance element illustrated in

FIG. 1

; and





FIGS. 3 and 4

are circuit diagrams illustrating a system for quantizing an analog signal in accordance with first and second embodiments of the present invention.











DETAILED DESCRIPTION OF THE INVENTION




The preferred embodiments of the present invention and its advantages are best understood by referring now in more detail to

FIGS. 1 through 4

of the drawings, in which like numerals refer to like parts.





FIG. 1

is a schematic diagram of a resonant tunneling diode (RTD)


10


for use as a negative-resistance element in accordance with the teachings of the present invention. The RTD


10


comprises an input terminal


11


for receiving an input signal, an output terminal


12


for producing an output signal, two tunnel barrier layers


13


, and a quantum well layer


14


.





FIG. 2

is a graph showing current as a function of voltage for a negative-resistance element such as an RTD


10


. The shape of this I-V curve is determined by the quantum effects that are a result of the extreme thinness of the tunnel barrier layers


13


and the quantum well layer


14


. These layers


13


and


14


are approximately ten (10) to twenty (20) atoms thick.




When a voltage of low amplitude is applied to the input terminal


11


, almost no electrons tunnel through both tunnel barrier layers


13


. This results in a negligible current and the RTD


10


is switched off. As the voltage increases, the energy of the electrons received at the input terminal


11


also increases and the wavelength of these electrons decreases. This occurs because an electron's wavelength is determined by dividing Planck's constant by the electron's momentum. When a particular voltage level is reached at the input terminal


11


, a specific number of electron wavelengths will fit within the quantum well layer


14


. At this point, resonance is established as electrons that tunnel through one tunnel barrier layer


13


remain in the quantum well layer


14


, giving those electrons opportunities to tunnel through the second tunnel barrier layer


13


to the output terminal


12


. Thus, a current flow is established from the input terminal


11


to the output terminal


12


and the RTD


10


is switched on. However, if the voltage level continues to rise, eventually no electrons will have the proper wavelength to tunnel through both tunnel barrier layers


13


and the RTD


10


is switched off. This property of negative-resistance elements such as RTDs


10


that allows switching back and forth between on and off states as the voltage increases enables biasing to operate in one of three stable states, as illustrated in FIG.


2


. These three stable states are the negative-bias valley region


16


, the pre-peak region


17


, and the positive-bias valley region


18


.




Another property associated with the extreme thinness of the tunnel barrier layers


13


and the quantum well layer


14


of the RTD


10


relates to switching speed. Because each of these layers


13


and


14


are only about ten (10) to twenty (20) atoms thick, an electron only travels about 0.01 microns from the input terminal


11


to the output terminal


12


. Because of this short distance, the RTD


10


switches on and off at a very high rate.





FIGS. 3 and 4

are circuit diagrams illustrating systems


20


and


50


for quantizing an analog signal in accordance with the present invention. Systems


20


and


50


comprise a first RTD


22


, a second RTD


24


, a first capacitor


26


and a second capacitor


28


. Systems


20


and


50


also comprise an input terminal


30


for receiving an analog input signal, a clock terminal


32


for receiving a clock signal, an inverted clock terminal


34


for receiving an inverted clock signal, and an output terminal


36


having the quantized output signal.




According to one embodiment of the present invention, the input received at the input terminal


30


comprises a current varying signal, while the output at the output terminal


36


comprises a voltage varying signal. In one implementation of systems


20


and


50


, the input signal varies in the X-band range (ten or more gigahertz).




In the system


20


shown in

FIG. 3

, the RTDs


22


and


24


are biased the same with respect to the clock terminal


32


. The system


50


shown in

FIG. 4

comprises a third RTD


38


and a fourth RTD


40


. In this system


50


, the RTDs


22


and


38


and the RTDS


24


and


40


are connected in parallel and biased oppositely to each other.




As illustrated in

FIGS. 3 and 4

, systems


20


and


50


also comprise a first resistor


44


and a first power supply


46


coupled to the first RTD


22


and the first capacitor


26


, as well as a second resistor


48


and a second power supply


50


coupled to the second RTD


24


and the second capacitor


28


. These resistors


44


and


48


and power supplies


46


and


50


provide biasing for the RTDs


22


,


24


,


38


and


40


. According to one embodiment, the resistors


44


and


48


comprise


6


ohm resistors, the first power supply


46


comprises a positive power supply and the second power supply


50


comprises a negative power supply. It will be understood, however, that the resistors


44


and


48


may comprise other suitable resistances and the power supplies


46


and


50


may be otherwise suitably configured without departing from the scope of the present invention.




In systems


20


and


50


, the RTDs


22


,


24


,


38


and


40


operate in the pre-peak region


17


when the input current is zero. This produces an output signal of zero voltage. However, when the input current reaches a specified level, one of the RTDs


22


or


24


or one of the RTD pairs


22


and


38


or


24


and


40


is forced by the resultant asymmetry into either the negative-bias valley region


16


or the positive-bias valley region


18


. For the negative-bias valley region


16


, the resulting output signal is -1. For the positive-bias valley region


18


, the resulting output signal is +1.




In the embodiment shown in

FIG. 3

, the system


20


comprises two single RTDs


22


and


24


. This embodiment provides a more compact layout and operates at a higher switching speed than the embodiment shown in

FIG. 4

, wherein the RTDs


22


,


24


,


38


and


40


are connected in parallel pairs. However, the embodiment shown in

FIG. 4

provides more symmetry and reduces even-order harmonics that may exist in the embodiment shown in FIG.


3


.




Although the present invention has been described with several embodiments, various changes and modifications may be suggested in the art. It is intended that the present invention encompass such changes and modifications as fall within the scope of the appended claims.



Claims
  • 1. A system for quantizing an analog signal comprising:a first negative-resistance device having a first terminal and a second terminal, the second terminal coupled to receive an analog input signal; a second negative-resistance device having a first terminal coupled to receive the input signal and a second terminal; a first capacitor having a first terminal coupled to receive a clock signal and a second terminal coupled to the first terminal of the first negative-resistance device; a second capacitor having a first terminal coupled to the second terminal of the second negative-resistance device and a second terminal coupled to receive an inverted clock signal; and an output terminal coupled to the second terminal of the first negative-resistance device and the first terminal of the second negative-resistance device, a quantized output signal generated at the output terminal.
  • 2. The system of claim 1, wherein the first and second negative-resistance devices each comprise a resonant tunneling diode.
  • 3. The system of claim 1, further comprising means for biasing the first and second negative-resistance devices the same with respect to the clock signal.
  • 4. The system of claim 1, wherein the first and second negative-resistance devices each comprise a first resonant tunneling diode in parallel with a second resonant tunneling diode and wherein the first resonant tunneling diode is biased oppositely to the second resonant tunneling diode.
  • 5. A system for quantizing an analog signal comprising:an input terminal for receiving an analog input signal; a clock terminal for receiving a clock signal; an inverted clock terminal for receiving an inverted clock signal; a first capacitor having a first terminal and a second terminal, wherein the first terminal couples to the clock terminal; a first resonant tunneling diode having a first terminal coupled to the second terminal of the first capacitor and a second terminal coupled to the input terminal; a second capacitor having a first terminal and a second terminal, wherein the second terminal couples to the inverted clock terminal; a second resonant tunneling diode having a first terminal coupled to the input terminal and a second terminal coupled to the first terminal of the second capacitor; and an output terminal coupled to the second terminal of the first negative-resistance device and the first terminal of the second negative-resistance device, a quantized output signal generated at the output terminal.
  • 6. The system of claim 5, further comprising means for biasing the first and second resonant tunneling diodes the same with respect to the clock terminal.
  • 7. The system of claim 5, further comprising:a third resonant tunneling diode having a first terminal coupled to the input terminal and a second terminal coupled to the second terminal of the first capacitor to bias the first resonant tunneling diode oppositely to the third resonant tunneling diode; and a fourth resonant tunneling diode having a first terminal coupled to the first terminal of the second capacitor and a second terminal coupled to the input terminal to bias the second resonant tunneling diode oppositely to the fourth resonant tunneling diode.
  • 8. A method for quantizing an analog signal comprising:capacitively coupling a clock signal to a first terminal of a first negative-resistance device; receiving an input signal at a second terminal of the first negative-resistance device; receiving the input signal at a first terminal of a second negative-resistance device; capacitively coupling an inverted clock signal to a second terminal of the second negative-resistance device; and providing a quantized output signal at an output terminal coupled to the second terminal of the first negative-resistance device and the first terminal of the second negative-resistance device.
  • 9. The method of claim 8, wherein the first and second negative-resistance devices each comprise a resonant tunneling diode.
  • 10. The method of claim 8, further comprising biasing the first and second negative-resistance devices the same with respect to the clock terminal.
  • 11. The method of claim 8, wherein the first and second negative-resistance devices each comprise a first resonant tunneling diode and a second resonant tunneling diode and further comprising:connecting the first resonant tunneling diode in parallel with the second resonant tunneling diode; and biasing the first resonant tunneling diode opposite to the second resonant tunneling device.
US Referenced Citations (23)
Number Name Date Kind
3569733 Weischedel Mar 1971 A
3701148 Frei Oct 1972 A
3815124 Brewer Jun 1974 A
3889134 Basham Jun 1975 A
5132557 Uchida et al. Jul 1992 A
5272480 Lee Dec 1993 A
5313117 Maezawa May 1994 A
5444751 Sage Aug 1995 A
5563530 Frazier et al. Oct 1996 A
5606177 Wallace et al. Feb 1997 A
5698997 Williamson, III et al. Dec 1997 A
5815008 Williamson, III et al. Sep 1998 A
5869845 Vander Wagt et al. Feb 1999 A
5874911 Kodama Feb 1999 A
5883829 van der Wagt Mar 1999 A
5930323 Tang et al. Jul 1999 A
5953249 van der Wagt Oct 1999 A
6037819 Broekaert Mar 2000 A
6229468 Broekaert May 2001 B1
6292118 Broekaert Sep 2001 B1
6348887 Broekaert Feb 2002 B1
6366226 Broekaert Apr 2002 B2
6366229 Broekaert Apr 2002 B2
Foreign Referenced Citations (2)
Number Date Country
27 55 228 Jun 1979 DE
1370758 Jan 1988 SU
Non-Patent Literature Citations (11)
Entry
Mir, S., et al, “Unified Built-In Self-Test for Fully Differential Analog Circuits”, Journal of Electronic Testing: Theory and Applications 9, 135-151 (1996), 1996 Kluwer Academic Publishers.
Sen-Jung Wei, et al, “A Self-Latching A/D Converter Using Resonant Tunneling Diodes”, IEEE Journal of Solid-State Circuits, vol. 28, No. 6, Jun. 1993, pp. 697-700.
Takumi Miyashita, et al., “5 GHz E) Analog-to-Digital Converter with Polarity Alternating Feedback Comparator”, IEEE Gallium Arsenide Integrated Circuit Symposium, pp. 91-94, 1997.
Kleks, J., “A 4-Bit Single Chip Analog to Digital Converter with A 1.0 Gigahertz Analog Input Bandwidth”, IEEE Gallium Arsenide Integrated Circuit Symposium, pp. 79-82, 1987.
Baskin, H.B., “N-Valued Logic Circuit”, IBM Technical Disclosure Bulletin, XP-002138968, vol. 3, No. 10, Mar. 1961—p. 81.
Sun, C.K., et al, “A Bridge Type Optoelectronic Sample and Hold Circuit”, 1991 IEEE International Symposium on Circuits and Systems, Singapore, Jun. 11-14, 1991, cover and pp. 3003-3006.
Fushimi, Kazuo, “Pulse Circuits Using Esaki Diodes”, Electronics and Communications in Japan, vol. 47, No. 4, Apr. 1964, XP-000907071, pp. 142-152, Scripta Technica, NY, US.
U.S. application Ser. No. 09/938,027, “Method and System for Generating a Memory Cell”, inventors Jan Paul van der Wagt, et al, filed Aug. 22, 2001, 21 pages, and 2 sheets of drawings, Attorney Docket No. 004578.0732.
Pages 161-193 of a technical booklet pertaining to ADCs, title unknown, author(s) unknown, date unknown.
Jackson, E. M., et al, “Proton-Induced Disorder in InP-based Resonant Tunneling Diodes”, 11 pages, Unknown.
Van Der Wagt, J. P. A., et al, “Ultralow Current Density RTDs for Tunneling-Based SRAM”, 4 pages, Unknown.