Method for bonding a tantalum structure to a cobalt-alloy substrate

Information

  • Patent Grant
  • 8608049
  • Patent Number
    8,608,049
  • Date Filed
    Wednesday, October 10, 2007
    17 years ago
  • Date Issued
    Tuesday, December 17, 2013
    11 years ago
Abstract
A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.
Description
FIELD OF THE INVENTION

This invention relates generally to orthopedic implants, and more particularly relates to a method for bonding a porous tantalum structure to cobalt or a cobalt-alloy orthopedic implant.


BACKGROUND OF THE INVENTION

Orthopedic implants are often utilized to help their recipients recover from injury or disease. To promote quick recovery, orthopedic implants are designed to cooperate with the body's natural inclination to heal itself. Some orthopedic implants are designed to foster osseointegration. As is known in the art, osseointegration is the integration of living bone within a man-made material, usually a porous structure. Cells in the recipient form new bone within the pores of the porous structure. Thus, the porous structure and the bone tissue become intermingled as the bone grows into the pores. Accordingly, orthopedic implants may include a porous surface to enhance fixation between the orthopedic implant and adjacent tissue. Of course, the faster the surrounding tissue grows into the porous surface, the sooner the patient may begin to resume normal activities. However, the manufacture of the orthopedic implants with porous structures is not without difficulty.


Orthopedic implants are usually made from various metals. One difficulty encountered during manufacturing is bonding separate components, each made of a different metal, together. For example, cobalt is a popular metal used to make orthopedic implants, and other popular metals include alloys of cobalt with other metals, such as chromium. The porous structure may be made from an entirely different metal, such as tantalum. In this case, bonding the porous metal to the orthopedic implant involves bonding tantalum to cobalt or to cobalt-chromium alloys. Bonding these two metals together has proved to be particularly problematic.


Thus, there is a need for an improved method of bonding of porous structures, specifically tantalum, to cobalt and cobalt-alloy implants such that the bond has sufficient strength while the corrosion resistance of the metals in the resulting implant are maintained.


SUMMARY OF THE INVENTION

The present invention provides a method for bonding a porous tantalum structure to a substrate. In one embodiment, the method comprises providing (i) a substrate comprising cobalt or a cobalt-chromium alloy; (ii) an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and (iii) a porous tantalum structure, and applying heat and pressure for a time sufficient to achieve solid-state diffusion between the substrate and the interlayer and solid-state diffusion between the interlayer and the porous tantalum structure.





BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with a general description of the invention given above, and the detailed description given below, serve to explain the invention.



FIG. 1 depicts a cross-sectional view of one embodiment of an assembly comprising a porous tantalum structure, a pre-formed sheet interlayer, and a substrate;



FIG. 2 depicts a cross-sectional view of another embodiment of an assembly comprising a porous tantalum structure, a coating interlayer, and a substrate; and



FIGS. 3 and 4 are photomicrographs corresponding to the embodiments of FIGS. 1 and 2, respectively, following heating and pressing the assembly to bond the porous tantalum structure to the interlayer and the interlayer to the substrate.





DETAILED DESCRIPTION

In accordance with the present invention and with reference to FIGS. 1 and 2, a method for bonding a porous tantalum structure 10 to a substrate 12 generally begins by constructing an assembly 14 comprising an interlayer 16 placed on the surface of the substrate 12 and the porous tantalum structure 10 placed onto the interlayer 16. It will be appreciated that the assembly 14 may be constructed by placing the individual components 10, 12, 16 together in any order that results in the interlayer 16 positioned between and in contact with the substrate 12, and the porous tantalum structure 10, as shown in FIGS. 1 and 2. In other words, the placement order is not limited to those orders described herein.


The porous tantalum structure 10 may be TRABECULAR METAL®, available from Zimmer Inc., Warsaw, Ind. The porous tantalum structure 10 is configured to facilitate osseointegration. The porous tantalum structure 10 may have a pore size, pore continuity, and other features for facilitating bone tissue growth into the pores, as is known in the art.


The substrate 12 may be a cast or a wrought cobalt or cobalt chromium alloy fabricated in a shape according to the requirements for the specific orthopedic application. For example, the substrate 12 may be cast of cobalt in the shape of a total hip replacement implant. Other implants may include implants for the ankle, elbow, shoulder, knee, wrist, finger, and toe joints or other portions of the body that may benefit from a substrate 12 having a porous tantalum structure 10 bonded thereto.


With no intent to be bound by theory, tantalum and cobalt metals are not readily soluble, that is, the documented solid solubility of tantalum into cobalt is insufficient to form the necessary bond strength demanded by applications within the human body. In fact, certain stoichiometries of tantalum with cobalt may prevent solid-state diffusion of tantalum into cobalt and vice versa. Therefore, in accordance with the method of the present disclosure, the interlayer 16 comprises a metal that readily forms solid solutions with both tantalum and cobalt or cobalt-chromium alloys. For example, the interlayer 16 may be any one or an alloy of metals, such as, hafnium, manganese, niobium, palladium, zirconium, titanium, or other metals or alloys that exhibit solid solubility with tantalum at temperatures less than the melting temperature of the substrate 12, the interlayer 16, or the porous tantalum structure 10.


The assembly 14, as shown in FIGS. 1 and 2, may be put together by applying the interlayer 16 to the substrate 12. One skilled in the art will observe that the interlayer 16 may require pre-shaping to improve the contact area between the surface of the substrate 12 and the surface of interlayer 16 prior to applying the interlayer 16 to the substrate 12. Alternatively, the interlayer 16 may be press formed onto the substrate 12 such that the interlayer 16 conforms to the surface of the substrate 12. The surfaces of all components 10, 12, 16 may be cleaned prior to assembly 14 to reduce corrosion and improve solid-state diffusion bonding.


With continued reference to FIGS. 1 and 2, following application of the interlayer 16 to the substrate 12, the porous tantalum structure 10 may be placed on the interlayer 16 thus forming the assembly 14. Similar to pre-shaping the interlayer 16 to conform to the substrate 12, the porous tantalum structure 10 may be formed in a shape to maximize surface-to-surface contact to facilitate solid-state diffusion with the interlayer 16.


Heat and pressure are applied to the assembly 14 sufficient for solid-state diffusion to take place between the substrate 12 and the interlayer 16 and between the interlayer 16 and the porous tantalum structure 10. As is known to those skilled in the art, solid-state diffusion is the movement and transport of atoms in solid phases. Solid-state diffusion bonding forms a monolithic joint through formation of bonds at an atomic level due to transport of atoms between two or more metal surfaces. Heat and pressure may be supplied to the assembly 14 with a variety of methods known in the art. For example, the assembly 14 may be heated electrically, radiantly, optically, by induction, by combustion, by microwave, or other means known in the art. Pressure may be applied mechanically by clamping the assembly 14 together prior to insertion of the assembly 14 into a furnace, or pressure may be applied via a hot pressing system capable of applying pressure once the assembly 14 reaches a target temperature, as is known in the art. Furthermore, hot pressing may include hot isostatic pressing, also known in the art.


Referring now to FIG. 1, in one embodiment, the interlayer 16 is a pre-formed sheet of commercially pure titanium at least about 0.016 inches (about 0.04064 centimeter) thick. In another embodiment, the pre-formed sheet of commercially pure titanium is at least about 0.020 inches (about 0.0508 centimeter) thick for improved bond strength. It will be observed that the interlayer 16 may be positioned directly beneath the porous tantalum structure 10. In other words, it is not necessary to cover the entire substrate 12 with the interlayer 16 to bond the porous tantalum structure 10 at a single location. Furthermore, it will also be observed that the corrosion resistance and the strength of the substrate 12 are not negatively impacted if the porous tantalum structure 10 touches those areas not covered by the interlayer 16 during heating. Thus, the porous tantalum structure 10 may be bonded to multiple separate areas on the surface of the substrate 12 with multiple separate areas of interlayer 16. One skilled in the art will appreciate that the position of the porous tantalum structure 10 may be dictated by the patient's physiological requirements.


In one embodiment, the assembly 14 is clamped together by applying a pressure of at least approximately 200 pounds per square inch (psi) (approximately 1.38 MPa). However, pressures greater than approximately 200 psi may be applied up to the compressive yield strength of the any of the substrate 12, the interlayer 16, or the porous tantalum structure 10. Ordinarily, the porous tantalum structure 10 has the lowest compressive yield strength, for example, 5,800 psi for TRABECULAR METAL®.


The clamped assembly 14 is then heated to at least about 540° C. (about 1004 degree Fahrenheit) in vacuum or in another sub-atmospheric pressure of an inert atmosphere. In any case, the clamped assembly 14 is heated to less than the melting temperature of any of the components 10, 12, 16 and, in most cases, is at least about 800° C. (about 1472 degree Fahrenheit) but less than about 1000° C. (about 1832 degree Fahrenheit) in vacuum. One skilled in the art will observe that the higher the temperature, the less time it will take to achieve solid-state diffusion bonding. The time required to achieve solid-state diffusion bonding may be as little as less than 1 hour to as long as 48 hours and will depend on the metals involved, the temperatures, atmosphere, and the pressures applied.


Once heated to temperature, and after a time sufficient to achieve solid-state diffusion between the porous tantalum structure 10 and the interlayer 16 and between the interlayer 16 and the substrate 12, a construct is formed. The construct may comprise the substrate 12 bonded to the interlayer 16 and the interlayer 16 bonded to the porous tantalum structure 10. FIG. 3 is a photomicrograph of a portion of the construct formed according to one embodiment of the method, described above, with a porous tantalum structure 10 (top) bonded to a titanium sheet interlayer 16 (middle) bonded to a cobalt-chromium substrate 12 (bottom).


With reference now to FIG. 2, in another embodiment, the interlayer 16 is a coating applied to the surface by, for example, thermal spray, plasma spray, electron beam deposition, laser deposition, cold spray, or other method of forming the coatings on a substrate 12. In one exemplary embodiment, the coating interlayer 16 is applied via vacuum plasma spraying, as is known in the art. The substrate 12 may be masked and then grit blasted to prepare the surface of the substrate 12 for vacuum plasma spraying. In one exemplary embodiment, the substrate 12 is masked and then grit blasted with alumina (aluminum oxide) grit for increased corrosion resistance of the construct subsequent to bonding with the interlayer 16. In another exemplary embodiment, the coating interlayer 16 comprises titanium sprayed to a thickness of at least about 0.010 inches (about 0.0254 centimeter) thick. In another embodiment, for increased bond strength, the titanium coating interlayer 16 is at least about 0.020 inches (about 0.0508 centimeter) thick. In the vacuum plasma sprayed embodiments, a porosity level is between about 20% and about 40% for ease of vacuum plasma spray processing while maintaining sufficient corrosion resistance. FIG. 4 is a photomicrograph of a portion of a construct formed according to one embodiment of the method described above, showing a portion of a construct comprising a porous tantalum structure 10 (top) bonded to a titanium vacuum plasma sprayed interlayer 16 (middle) bonded to a cobalt-chromium substrate 12 (bottom).


In one exemplary embodiment, a construct comprising a porous tantalum structure 10 of TRABECULAR METAL® bonded to a titanium interlayer 16 bonded to a cobalt-chromium substrate 12 was characterized by tensile strength testing. Nearly all failure separations occurred in the porous tantalum structure 10. Tensile stresses measured at separation on constructs formed according to the previously described embodiments were routinely above 2,900 psi.


One skilled in the art will observe that heating and applying pressure may include multiple heating and pressurizing processes. For example, the porous tantalum structure 10 may be assembled with the interlayer 16 and bonded thereto, according to one embodiment of the method, to form a subassembly. That subassembly may then be bonded to the substrate 12 according to another embodiment of the method. The reverse procedure may also be used. That is, the interlayer 16 may be bonded to the substrate 12 to form a subassembly with subsequent bonding of the porous tantalum structure 10 to the interlayer portion of the subassembly. Therefore, embodiments of the method may account for different diffusion coefficients between the components 10, 12, 16 which may allow for more consistent, higher strength bonds between the substrate 12 and interlayer 16 and between the interlayer 16 and the porous tantalum structure 10. By way of further example and not limitation, diffusion bonding of a titanium interlayer 16 to a cobalt-chromium substrate 12 at an elevated temperature and pressure may take longer than diffusion bonding of the titanium interlayer 16 to a porous tantalum structure 10 at similar pressures and temperatures. Thus, by diffusion bonding the titanium interlayer 16 to the cobalt-chromium substrate 12 to form a subassembly and then diffusion bonding the porous tantalum structure 10 to the subassembly, a diffusion bond depth between the titanium interlayer 16 and the cobalt-chromium substrate 12 may be substantially the same as a diffusion bond depth between the titanium interlayer 16 and the porous tantalum structure 10. In contrast, if the porous tantalum structure 10, the titanium interlayer 16, and the cobalt-chromium substrate 12 are bonded with a single application of heat and pressure, the diffusion bond depths between the titanium interlayer 16 and the porous tantalum structure 10 and between the titanium interlayer 16 and the cobalt-chromium substrate 12 may be different.


While the present invention has been illustrated by the description of one or more embodiments thereof, and while the embodiments have been described in considerable detail, they are not intended to restrict or in any way limit the scope of the appended claims to such detail. Additional advantages and modifications will readily appear to those skilled in the art. The invention in its broader aspects is therefore not limited to the specific details, representative apparatus and method and illustrative examples shown and described. Accordingly, departures may be made from such details without departing from the scope of the general inventive concept.

Claims
  • 1. A method for bonding a porous tantalum structure to a substrate, comprising: providing a substrate comprising cobalt or a cobalt-chromium alloy;providing a preformed solid sheet consisting essentially of a metal or a metal alloy, said metal or metal alloy including at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof, said preformed solid sheet having a top surface and a bottom surface;providing a porous tantalum structure;applying heat and pressure to the substrate and the preformed solid sheet for a time sufficient to achieve solid-state diffusion between the substrate and the bottom surface of the preformed solid sheet; andapplying heat and pressure to the preformed solid sheet and the porous tantalum structure for a time sufficient to achieve solid-state diffusion between the top surface of the preformed solid sheet and the porous tantalum structure, wherein the preformed solid sheet of metal defines an interlayer between the substrate and the porous tantalum structure,wherein said applying heat and pressure to the substrate and the preformed solid sheet and said applying heat and pressure to the preformed solid sheet and the porous tantalum structure occur concurrently.
  • 2. The method of claim 1, wherein said preformed solid sheet is press formed onto the substrate so as to conform to the substrate prior to said applying heat and pressure to the substrate and the preformed solid sheet.
  • 3. A method for bonding a porous tantalum structure to a substrate, comprising: providing a substrate comprising cobalt or a cobalt-chromium alloy;providing a porous tantalum structure;providing a preformed solid sheet having a top surface and a bottom surface, said preformed solid sheet consisting essentially of a metal or a metal alloy, said metal or metal alloy including at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof;forming an assembly which includes positioning the preformed solid sheet between the substrate and the porous tantalum structure such that the bottom surface of the preformed solid sheet contacts the substrate and the top surface of the preformed solid sheet contacts the porous tantalum structure; andapplying heat and pressure to the assembly for a time sufficient to concurrently achieve solid-state diffusion between the substrate and the bottom surface of the preformed solid sheet and solid-state diffusion between the top surface of the preformed solid sheet and the porous tantalum structure.
  • 4. The method of claim 3, wherein the preformed solid sheet conforms to the surface of the substrate prior to applying said heat and pressure.
  • 5. The method of claim 3, wherein the preformed solid sheet is at least about 0.016 inches thick.
  • 6. The method of claim 3, wherein said applying heat and pressure includes applying at least approximately 200 psi to the assembly.
  • 7. The method of claim 3, wherein said applying heat and pressure includes applying a pressure that is less than a compressive yield strength of the porous tantalum structure.
  • 8. The method of claim 3, wherein said applying heat and pressure includes heating to less than about 1000° C. in a vacuum environment.
  • 9. The method of claim 3, wherein the preformed solid sheet has a thickness of at least about 0.016 inches and said applying heat and pressure includes applying a pressure of at least about 200 psi and heating the assembly to at least about 540° C. for at least one hour.
  • 10. A method for bonding a porous tantalum structure to a substrate, comprising: providing a substrate comprising cobalt or a cobalt-chromium alloy;providing a preformed solid sheet having a top surface, a bottom surface and a thickness of at least about 0.016 inches, said preformed solid sheet consisting essentially of a metal or a metal alloy, the metal or metal alloy including at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof;providing a porous tantalum structure;forming an assembly which includes positioning the preformed solid sheet as an interlayer between said substrate and said porous tantalum structure, wherein the bottom surface of the preformed solid sheet contacts the substrate and the top surface of the preformed solid sheet contacts the porous tantalum structure;applying a pressure of at least about 200 psi to the assembly; andheating the assembly to at least about 540° C. for at least one hour to concurrently achieve solid-state diffusion between the substrate and the preformed solid sheet and between the preformed solid sheet and the porous tantalum structure.
  • 11. The method of claim 1, further comprising conforming the preformed solid sheet to the substrate prior to applying said heat and pressure to the substrate and the preformed solid sheet.
  • 12. The method of claim 1, wherein the e preformed solid sheet is pre-shaped to conform to the substrate.
  • 13. The method of claim 1, wherein the preformed solid sheet is at least about 0.016 inches thick.
  • 14. The method of claim 1, wherein the preformed solid sheet is at least about 0.020 inches thick.
  • 15. The method of claim 1, wherein the preformed solid sheet is about 0.016 inches thick to about 0.020 inches thick.
  • 16. The method of claim 3, wherein the preformed solid sheet is pre-shaped to conform to the substrate.
  • 17. The method of claim 10, wherein said positioning includes conforming the preformed solid sheet to the substrate.
  • 18. The method of claim 3, wherein said preformed solid sheet is press formed onto the substrate so as to conform to the substrate prior to said applying heat and pressure to the assembly.
  • 19. The method of claim 1, wherein said applying heat and pressure to the preformed solid sheet and the porous tantalum structure includes applying a pressure that is at least 200 psi but less than the compressive yield strength of the porous tantalum structure.
US Referenced Citations (312)
Number Name Date Kind
3353259 Kirkpatrick Nov 1967 A
3605123 Hahn Sep 1971 A
3643658 Steinemenan Feb 1972 A
3852045 Wheeler et al. Dec 1974 A
3855638 Pilliar Dec 1974 A
4004064 Kessler Jan 1977 A
4005988 Paulonis et al. Feb 1977 A
4479271 Bolesky et al. Oct 1984 A
4563489 Urist Jan 1986 A
4570271 Sump Feb 1986 A
4673409 Van Kampen Jun 1987 A
4713076 Draenert Dec 1987 A
4923471 Morgan May 1990 A
5013324 Zolman et al. May 1991 A
5084050 Draenert Jan 1992 A
5198308 Shetty et al. Mar 1993 A
5282861 Kaplan Feb 1994 A
5302414 Alkhimov Apr 1994 A
5323954 Shetty et al. Jun 1994 A
5363554 Partridge et al. Nov 1994 A
5383934 Armini Jan 1995 A
5397796 Zoller Mar 1995 A
5447724 Helmus Sep 1995 A
5458653 Davidson Oct 1995 A
5470829 Prisell Nov 1995 A
5492697 Boyan Feb 1996 A
5529914 Hubbell Jun 1996 A
5534524 Bonewald Jul 1996 A
5535810 Compton Jul 1996 A
5543441 Rhee Aug 1996 A
5550178 Desai Aug 1996 A
5554594 Zoller Sep 1996 A
5565407 Southard Oct 1996 A
5569463 Helmus Oct 1996 A
5573934 Hubbell Nov 1996 A
5631011 Wadstrom May 1997 A
5658334 Caldarise Aug 1997 A
5658935 Kingler Aug 1997 A
5665118 LaSalle Sep 1997 A
5688855 Stoy Nov 1997 A
5713410 LaSalle Feb 1998 A
5736160 Ringeisen Apr 1998 A
5788979 Alt Aug 1998 A
5801033 Hubbell Sep 1998 A
5824651 Nanci Oct 1998 A
5834274 Hubbell Nov 1998 A
5843743 Hubbell Dec 1998 A
5866113 Hendriks Feb 1999 A
5893846 Bales Apr 1999 A
5925552 Keogh Jul 1999 A
5928916 Keogh Jul 1999 A
5932299 Katoot Aug 1999 A
5947893 Agrawal Sep 1999 A
6004943 Shi Dec 1999 A
6099562 Ding Aug 2000 A
6120536 Ding Sep 2000 A
6121027 Clapper Sep 2000 A
6153252 Hossainy Nov 2000 A
6166173 Mao Dec 2000 A
6177095 Swahney Jan 2001 B1
6179817 Zhong Jan 2001 B1
6197051 Zhong Mar 2001 B1
6238687 Mao May 2001 B1
6254634 Anderson Jul 2001 B1
6258121 Yang Jul 2001 B1
6284305 Ding Sep 2001 B1
6309660 Hsu Oct 2001 B1
6313119 Peyman Nov 2001 B1
6316522 Loomis Nov 2001 B1
6322797 Mao Nov 2001 B1
6368658 Schwarz Apr 2002 B1
6395023 Summers May 2002 B1
6395029 Levy May 2002 B1
6419806 Holcomb et al. Jul 2002 B1
6451373 Hossainy Sep 2002 B1
6455541 Bonewald Sep 2002 B1
6461631 Dunn Oct 2002 B1
6486232 Wise Nov 2002 B1
6492356 Peyman Dec 2002 B1
6500481 Vanderlaan Dec 2002 B1
6506437 Harish Jan 2003 B1
6514515 Williams Feb 2003 B1
6514734 Clapper Feb 2003 B1
6527938 Bales et al. Mar 2003 B2
6528080 Dunn Mar 2003 B2
6540746 Buehler Apr 2003 B1
6545097 Pinchuk Apr 2003 B2
6558734 Koulik May 2003 B2
6596402 Soerens Jul 2003 B2
6600010 Mao Jul 2003 B2
6620194 Ding Sep 2003 B2
6632446 Hubbell Oct 2003 B1
6656517 Michal Dec 2003 B2
6669980 Hansen Dec 2003 B2
6673385 Ding Jan 2004 B1
6692790 Liu Feb 2004 B2
6723350 Burrell Apr 2004 B2
6730324 Troczynski May 2004 B2
6733768 Hossainy May 2004 B2
6743521 Hubbell Jun 2004 B2
6746685 Williams Jun 2004 B2
6749639 Lewallen Jun 2004 B2
6833192 Caruso Dec 2004 B1
6833363 Renier Dec 2004 B2
6855329 Shakesheff Feb 2005 B1
6866860 Nathan Mar 2005 B2
6869445 Johnson Mar 2005 B1
6872799 Nathan Mar 2005 B2
6881766 Hain Apr 2005 B2
6899107 Lewandrowski May 2005 B2
6899731 Li May 2005 B2
6921811 Zamora Jul 2005 B2
6923986 Pathak Aug 2005 B2
6923996 Epstein Aug 2005 B2
6945448 Medlin et al. Sep 2005 B2
6946443 Blanchat Sep 2005 B2
6967234 Nathan Nov 2005 B2
6969400 Rhee Nov 2005 B2
6986899 Hossainy Jan 2006 B2
6991681 Yoe Jan 2006 B2
6991802 Ahola Jan 2006 B1
6994883 Layrolle Feb 2006 B2
6998134 Schmidmaier Feb 2006 B2
7001421 Cheng Feb 2006 B2
7008979 Schottman Mar 2006 B2
7112361 Lynn Sep 2006 B2
7148209 Hoemann Dec 2006 B2
7157096 Zhang Jan 2007 B2
7163715 Kramer Jan 2007 B1
7185695 Santeler Mar 2007 B1
7186811 Lindholm Mar 2007 B2
20020018798 Sewing Feb 2002 A1
20020041899 Chudzik Apr 2002 A1
20020082552 Ding Jun 2002 A1
20020084194 Redepenning Jul 2002 A1
20020087184 Eder Jul 2002 A1
20020103526 Steinke Aug 2002 A1
20020111590 Davilia Aug 2002 A1
20020119179 Rezania Aug 2002 A1
20020120333 Keogh Aug 2002 A1
20020131989 Brown Sep 2002 A1
20020151617 Mao Oct 2002 A1
20020165608 Llanos Nov 2002 A1
20020192182 Massia Dec 2002 A1
20030004568 Ken Jan 2003 A1
20030007991 Masters Jan 2003 A1
20030083740 Pathak May 2003 A1
20030088307 Shulze May 2003 A1
20030099762 Zhang May 2003 A1
20030113478 Dang Jun 2003 A1
20030114937 Leatherbury Jun 2003 A1
20030117579 Morris Jun 2003 A1
20030118692 Wang Jun 2003 A1
20030122124 Nagano et al. Jul 2003 A1
20030124172 Lopez Jul 2003 A1
20030124368 Lynn Jul 2003 A1
20030129130 Guire Jul 2003 A1
20030157030 Davis Aug 2003 A1
20030185752 Nathan Oct 2003 A1
20030219562 Rypacek Nov 2003 A1
20030228364 Nathan Dec 2003 A1
20030229393 Kutryk Dec 2003 A1
20030232124 Medlin et al. Dec 2003 A1
20040033249 Sewing Feb 2004 A1
20040039441 Rowland Feb 2004 A1
20040044404 Stucke Mar 2004 A1
20040049265 Ding Mar 2004 A1
20040051201 Greenhalgh Mar 2004 A1
20040063654 Davis Apr 2004 A1
20040081745 Hansen Apr 2004 A1
20040086493 Hubbell May 2004 A1
20040086543 Keogh May 2004 A1
20040091462 Lin May 2004 A1
20040091603 Priewe May 2004 A1
20040093080 Helmus May 2004 A1
20040106985 Jang Jun 2004 A1
20040109892 Shalaby Jun 2004 A1
20040117007 Whitbourne Jun 2004 A1
20040120982 Diana Jun 2004 A1
20040126405 Sahatjian Jul 2004 A1
20040133271 Jang Jul 2004 A1
20040137066 Jayaraman Jul 2004 A1
20040138695 Li Jul 2004 A1
20040147999 Udipi Jul 2004 A1
20040157073 Burrell Aug 2004 A1
20040170752 Luthra Sep 2004 A1
20040172121 Eidenschink Sep 2004 A1
20040185086 Massia Sep 2004 A1
20040215313 Cheng Oct 2004 A1
20040215336 Udipi Oct 2004 A1
20040241202 Chluba Dec 2004 A1
20040241234 Vilkov Dec 2004 A1
20050025752 Kutryk Feb 2005 A1
20050025799 Hossainy Feb 2005 A1
20050031689 Shults Feb 2005 A1
20050031793 Moeller Feb 2005 A1
20050036946 Pathak Feb 2005 A1
20050048121 East Mar 2005 A1
20050049694 Neary Mar 2005 A1
20050060028 Horres Mar 2005 A1
20050079200 Rathenow Apr 2005 A1
20050084515 Udipi Apr 2005 A1
20050085605 Nathan Apr 2005 A1
20050095267 Campbell May 2005 A1
20050101692 Sohier May 2005 A1
20050106204 Hossainy May 2005 A1
20050112170 Hossainy May 2005 A1
20050112172 Pacetti May 2005 A1
20050129731 Horres Jun 2005 A1
20050147647 Glauser Jul 2005 A1
20050149171 McCullagh et al. Jul 2005 A1
20050152955 Akhave Jul 2005 A1
20050153429 Liebmann-Vinson Jul 2005 A1
20050154442 Eidenschink Jul 2005 A1
20050154450 Larson Jul 2005 A1
20050158359 Epstein Jul 2005 A1
20050165128 Cohn Jul 2005 A1
20050169882 Lowe Aug 2005 A1
20050169969 Li Aug 2005 A1
20050180919 Tedeschi Aug 2005 A1
20050183259 Eidenschink Aug 2005 A1
20050187376 Pacetti Aug 2005 A1
20050187602 Eidenschink Aug 2005 A1
20050187611 Ding Aug 2005 A1
20050191333 Hsu Sep 2005 A1
20050208093 Glauser Sep 2005 A1
20050208100 Weber Sep 2005 A1
20050208200 Ding Sep 2005 A1
20050214339 Tang Sep 2005 A1
20050215722 Pinchunk Sep 2005 A1
20050220837 Disegi Oct 2005 A1
20050220839 DeWitt Oct 2005 A1
20050220840 DeWitt Oct 2005 A1
20050220841 DeWitt Oct 2005 A1
20050220842 DeWitt Oct 2005 A1
20050220843 DeWitt Oct 2005 A1
20050244453 Stucke Nov 2005 A1
20050244459 DeWitt Nov 2005 A1
20050244636 Ding Nov 2005 A1
20050245637 Hossainy Nov 2005 A1
20050251250 Verhoeven Nov 2005 A1
20050255142 Chudzik Nov 2005 A1
20050266038 Glauser Dec 2005 A1
20050266077 Royer Dec 2005 A1
20050271700 DesNoyer Dec 2005 A1
20050271701 Cottone Dec 2005 A1
20050274478 Verner Dec 2005 A1
20050283224 King Dec 2005 A1
20050288229 Sindrey Dec 2005 A1
20060003008 Gibson Jan 2006 A1
20060008500 Chavan Jan 2006 A1
20060009839 Tan Jan 2006 A1
20060013850 Domb Jan 2006 A1
20060018948 Guire Jan 2006 A1
20060025848 Weber Feb 2006 A1
20060035854 Goldstein Feb 2006 A1
20060036311 Nakayama Feb 2006 A1
20060036316 Zeltinger Feb 2006 A1
20060039947 Schmidmaier Feb 2006 A1
20060039950 Zhou Feb 2006 A1
20060045901 Weber Mar 2006 A1
20060057277 Chappa Mar 2006 A1
20060067969 Lu Mar 2006 A1
20060093646 Cima May 2006 A1
20060105018 Epstein May 2006 A1
20060121081 Labrecque Jun 2006 A1
20060165754 Ranade Jul 2006 A1
20060188541 Richelsoph Aug 2006 A1
20060198868 DeWitt Sep 2006 A1
20060204536 Shults Sep 2006 A1
20060204542 Zhang Sep 2006 A1
20060210598 Evans Sep 2006 A1
20060210602 Sehl Sep 2006 A1
20060216772 Grinstaff Sep 2006 A1
20060222681 Richard Oct 2006 A1
20060222756 Davila Oct 2006 A1
20060233801 Brunkow Oct 2006 A1
20060233841 Brodbeck Oct 2006 A1
20060233941 Olson Oct 2006 A1
20060240063 Hunter et al. Oct 2006 A9
20060246103 Ralph Nov 2006 A1
20060246105 Molz Nov 2006 A1
20060246110 Brandon Nov 2006 A1
20060247793 Trieu Nov 2006 A1
20060251824 Boulais Nov 2006 A1
20060252981 Matsuda Nov 2006 A1
20060257377 Atala Nov 2006 A1
20060263830 Grinstaff Nov 2006 A1
20060263831 Grinstaff Nov 2006 A1
20060264531 Zhao Nov 2006 A1
20060286064 Turnell Dec 2006 A1
20060286071 Epstein Dec 2006 A1
20060293406 Bennett Dec 2006 A1
20070016163 Santini Jan 2007 A1
20070020308 Richard Jan 2007 A1
20070020469 Wood Jan 2007 A1
20070026043 Guan Feb 2007 A1
20070032882 Lodhi Feb 2007 A1
20070037737 Hoemmann Feb 2007 A1
20070038300 Bao Feb 2007 A1
20070041952 Guilak Feb 2007 A1
20070042017 Kutryk Feb 2007 A1
20070043374 Evans Feb 2007 A1
20070043433 Chandrasekaran Feb 2007 A1
20070045902 Brauker Mar 2007 A1
20070048291 Mang Mar 2007 A1
20070048292 Morita Mar 2007 A1
20070053963 Hotchkiss Mar 2007 A1
20070054127 Hergenrother Mar 2007 A1
20070055095 Chu Mar 2007 A1
20070055367 Kutryk Mar 2007 A1
20080050699 Zhang et al. Feb 2008 A1
Foreign Referenced Citations (33)
Number Date Country
2008229804 Dec 2012 AU
657519 Sep 1986 CH
4106971 Mar 1992 DE
0372662 Jun 1990 EP
0616814 Mar 1994 EP
0616814 Sep 1994 EP
1273303 Jan 2003 EP
1144018 Mar 2004 EP
1806155 Jul 2007 EP
2047937 Apr 2009 EP
2914207 Oct 2008 FR
62176966 Aug 1987 JP
62235272 Oct 1987 JP
2002348681 Dec 2002 JP
2004041726 Feb 2004 JP
2007231420 Sep 2007 JP
2009090121 Apr 2009 JP
WO9307835 Apr 1993 WO
WO-9307835 Apr 1993 WO
WO9628117 Sep 1996 WO
WO9738469 Oct 1997 WO
WO9738649 Oct 1997 WO
WO0139680 Jun 2001 WO
WO0182989 Nov 2001 WO
WO03077772 Sep 2003 WO
WO03077772 Sep 2003 WO
WO2005120203 Dec 2005 WO
WO-2006078864 Jul 2006 WO
WO2007014279 Feb 2007 WO
WO2007014279 Feb 2007 WO
WO2007038559 Apr 2007 WO
WO2007053022 May 2007 WO
WO-2012145292 Oct 2012 WO
Non-Patent Literature Citations (35)
Entry
ISR/WO From PCT/US2009/032608.
Jegnathian Karthiekeyan. Cold Spray Technology, Mar. 2005, pp. 33-35, ASB Industries, Barberton, OH.
ISR/WO From PCT/US2009/031502.
ISR from Application No. 08252074.2.
Uthoff. J. Orthop. Scie., 11:118-126 (2006).
Aleksyniene. Medicinia (Kaunus), vol. 40 (9): 842-849 (2004).
Termaat. J. Bone and Joint Surg., 870A(6): 1366-1378 (2005).
Morris. J. Bone and Joint Surg., 87-A(7), 1608-1618 (2005).
Pavoor. Biomat., 27, 1527-1533 (2006).
European Search Report for EP08253300.1 dated May 31, 2011.
Australian Government IP Examiner First Report for patent application AU 2008 229804 dated Jan. 1, 2012.
“U.S. Appl. No. 13/092,169, Examiner Interview Summary mailed Apr. 30, 2012”, 3 pgs.
“U.S. Appl. No. 13/092,174, Examiner Interview Summary mailed Apr. 27, 2012”, 3 pgs.
“European Application Serial No. 08253300.1, European Search Report mailed May 24, 2011”, 4 pgs.
“U.S. Appl. No. 13/092,169, Final Office Action mailed Mar. 21, 2012”, 11 pgs.
“U.S. Appl. No. 13/092,169, Non Final Office Action mailed Sep. 22, 2011”, 8 pgs.
“U.S. Appl. No. 13/092,169, Response filed Feb. 21, 2012 to Non Final Office Action mailed Sep. 22, 2011”, 13 pgs.
“U.S. Appl. No. 13/092,169, Response filed Aug. 20, 2012 to Final Office Action mailed Mar. 21, 2012”, 11 pgs.
“U.S. Appl. No. 13/092,174, Final Office Action mailed Mar. 20, 2012”, 11 pgs.
“U.S. Appl. No. 13/092,174, Non Final Office Action mailed Jun. 26, 2013”, 9 pgs.
“U.S. Appl. No. 13/092,174, Non Final Office Action mailed Sep. 19, 2011”, 12 pgs.
“U.S. Appl. No. 13/092,174, Preliminary Amendment filed Apr. 22, 2011”, 7 pgs.
“U.S. Appl. No. 13/092,174, Response filed Feb. 21, 2012 to Non Final Office Action mailed Sep. 19, 2011”, 12 pgs.
“U.S. Appl. No. 13/092,174, Response filed Aug. 20, 2012 to Final Office Action mailed Mar. 20, 2012”, 9 pgs.
“U.S. Appl. No. 13/092,174, Response filed Sep. 26, 2013 to Non Final Office Action mailed Jun. 26, 2013”, 11 pgs.
“Australian Application Serial No. 2008229804, Office Action mailed Jan. 13, 2012”, 5 pgs.
“Australian Application Serial No. 2008229804, Response Filed, Oct. 29, 2012”, 14 pgs.
“European Application Serial No. 08253300.1, Extended European Search Report mailed May 31, 2011”, 5 pgs.
“European Application Serial No. 08253300.1, Response filed Apr. 4, 2012 to Extended Search Report mailed May 31, 2011”, 4 pgs.
“International Application Serial No. PCT/US2012/033898, International Search Report mailed Jul. 31, 2012”, 5 pgs.
“International Application Serial No. PCT/US2012/033898, Written Opinion mailed Jul. 31, 2012”, 17 pgs.
“Japanese Application Serial No. 2008-263235, Office Action mailed Mar. 26, 2013”, 9 pgs.
“Japanese Application Serial No. 2008-263235, Response filed Sep. 18, 2013”, 8 pgs.
Giulio, Maccauro, “An overview about biomedical applications of micron and nano size Tantalum”, Recent Patents on Biotechnology, vol. 3, No. 3,, (2009), 157-165.
Karthikeyan, Jeganathan, “Cold Spray Technology, Advanced Materials & Processes”, ASB Industries, (Mar. 2005), 33-35.
Related Publications (1)
Number Date Country
20090098310 A1 Apr 2009 US