Claims
- 1. Method for controlling a reactive sputtering process comprising
- providing a cathode bearing a target to be sputtered in an evacuable chamber,
- supplying reactive gas to said chamber for reactive sputtering said target to produce a layer comprising a chemical compound having a metallic component, said layer emitting secondary electrons during sputtering,
- reactively sputtering said target by connecting said cathode to a power supply for producing a cathode discharge voltage V and a cathode discharge current I,
- keeping power P=IV constant, thereby providing a physical characteristic curve of discharge voltage versus reactive gas flow having an overall slope and a working portion on which a desired working voltage is located, said working portion having a slope of opposite sign than said overall slope,
- decreasing the reactive gas flow when said physical characteristic curve dictates increasing said reactive gas flow to achieve said desired working voltage, and
- increasing the reactive gas flow when said physical characteristic curve dictates decreasing said reactive gas flow to achieve said desired working voltage.
- 2. Method as in claim 1 wherein said chemical compound has a yield of secondary electrons during sputtering that is higher than that of said metallic component, whereby said physical characteristic curve has an overall slope which is negative and a working portion with a slope which is positive.
- 3. Method as in claim 2 wherein said chemical compound is one of Al.sub.2 O.sub.3 and SiO.sub.2.
- 4. Method as in claim 1 wherein said chemical compound has a yield of secondary electrons during sputtering that is lower than that of said metallic component, whereby said physical characteristic curve has an overall slope which is positive and a working portion with a slope which is negative.
- 5. Method as in claim 4 wherein said chemical compound is CrO.
- 6. Method for controlling a reactive sputtering process comprising
- providing a cathode bearing a target to be sputtered,
- supplying reactive gas to said chamber for reactive sputtering said target to produce a layer comprising a chemical compound having a metallic component, said layer emitting secondary electrons during sputtering,
- reactively sputtering said target by connecting said cathode to a power supply for producing a cathode discharge voltage V and a cathode discharge current I,
- keeping power P=IV constant, thereby producing a physical characteristic curve of discharge current versus reactive gas flow having an overall slope and a working portion on which a desired working current is located, said working portion having a slope of opposite sign than said overall slope,
- increasing the reactive gas flow when said physical characteristic curve dictates decreasing said reactive gas flow to achieve said desired working current, and
- decreasing the reactive gas flow when said physical characteristic curve dictates increasing said reactive gas flow to achieve said desire working current.
- 7. Method as in claim 6 wherein said chemical compound has a yield of secondary electrons during sputtering that is higher than that of said metallic component, whereby said physical characteristic curve has an overall slope which is positive and a working portion with a slope which is negative.
- 8. Method as in claim 7 wherein said chemical compound is one of Al.sub.2 O.sub.3 and SiO.sub.2.
- 9. Method as in claim 6 wherein said chemical compound has a yield of secondary electrons during sputtering that is lower than said metallic component, whereby said physical characteristic curve has an overall slope which is negative and a working portion with a slope which is positive.
- 10. Method as in claim 9 wherein said chemical compound is CrO.
Priority Claims (1)
Number |
Date |
Country |
Kind |
41 06 513.1 |
Mar 1991 |
DEX |
|
BACKGROUND OF THE INVENTION
This application is a continuation of U.S. Ser. No. 989,700, filed Dec. 14, 1992, now abandoned, which is a continuation of Ser. No. 692,925 filed Apr. 29, 1991, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (5)
Number |
Date |
Country |
2417288 |
Aug 1975 |
DEX |
2750611 |
May 1978 |
DEX |
144281 |
Aug 1980 |
DEX |
146306 |
Feb 1981 |
DEX |
2021294 |
Nov 1979 |
GBX |
Non-Patent Literature Citations (3)
Entry |
Patent Abstracts of Japan 60-70174 A., C-298, Aug. 10, 1985, vol. 9, No. 200. |
62-182273 A, C-472, Jan. 30, 1988, vol. 12, No. 33. |
Applied Physics A. Solids and Surfaces. Bd. A51, Nr. 5, Nov. 1990, Heidelberg De Seiten 423-426; Rao et al.: Preparation and Characterization of Cu-Cu20 Cermet Films, Seite 424, Spalte 2, Zeile 19--Seite 425, Spalte 1, Zeile 8. |
Continuations (2)
|
Number |
Date |
Country |
Parent |
989700 |
Dec 1992 |
|
Parent |
692925 |
Apr 1991 |
|