The present invention relates broadly to a method for converting a sensor capacitance under parasitic capacitance conditions and to a capacitance-to-voltage converter circuit for converting a sensor capacitance under parasitic capacitance conditions.
In applications that use a capacitive sensor element, capacitance-to-voltage (CV) converters are typically needed. Such applications include accelerometers, gyroscopes, pressure measurements systems, etc. Systems for such applications typically include either an external capacitive sensor that is outside an application specific integrated circuit (ASIC) that includes readout circuits, or an internal capacitive sensor embedded within the same chip of the ASIC with a readout circuit.
One challenge for current capacitive sensor interfaces is having a high impedance readout node and susceptibility of the node to parasitic and electromagnetic interferences. The readout of a capacitive sensor typically involves the conversion of the sensor capacitance or its changes to an electrical signal such as voltage, current or frequency. The design of the sensor is typically developed by considering the sensor and packaging specifications since both affect circuit performances. Typically, depending on the microelectromechanical systems (MEMS) and IC packaging (e.g. same die or not), the input parasitical capacitance of a readout IC can be high in relation to the sensing capacitor itself (e.g. more than 10 times). As a consequence, the readout circuit topology is typically chosen accordingly from the following groups. There are three main different groups currently: an AC-bridge with a voltage amplifier (continuous-time voltage), a transimpedance amplifier (continuous-time current) and transcapacitance circuits which can be based on a continuous-time or discrete-time approach (as discussed in Navid Yazdi, Haluk Kulah and Khalil Najafi, “Precision Readout Circuits for Capacitive Microaccelerometers”, Proceedings of IEEE Sensors, 2004).
An additional challenge for capacitive sensor interfaces is that for many applications, the circuitry for powering the capacitive sensor interface is typically battery operated. One such application is in the biomedical field, more particularly, implantable integrated circuits used in the biomedical field. Such applications typically provide low driving supply voltages and require low-power consumption. A number of such circuitry has been proposed. M. Tavakoli and R. Sarpeshkar, “An Offset-Canceling Low-Noise Lock-In Architecture for Capacitive Sensing”, IEEE Journal of Solid-State Circuits, vol. 38, no. 2, pp. 244-253, February 2003 describes a 1.5-μm BiCMOS chip used for capacitive sensing in a single-ended configuration. However, the power consumed in Tavakoli's work is about 20 mW and the supply voltage used is about 5V. Andrea Baschirotto, A. Gola, E. Chiesa, E. Lasalandra, F. Pasolini, M. Tronconi, and T. Ungaretti, “A 1-g Dual-Axis Linear Accelerometer in a Standard 0.5-μm CMOS Technology for High-Sensitivity Applications”, IEEE Journal of Solid-State Circuits, vol. 38, no. 7, pp. 1292-1297, July 2003 describes a differential amplifier in 0.5-μm CMOS technology coupled with a switched-capacitor filter used in an accelerometer. However, the power consumed in Baschirotto's work is about 45 mW and the supply voltage used is about 5V. J. Wu, G. K. Fedder, and L. R. Carley, “A Low-Noise Low-Offset Capacitive Sensing Amplifier for a 50-μg/√Hz Monolithic CMOS MEMS Accelerometer”, IEEE Journal of Solid-State Circuits, vol. 39, no. 5, pp. 722-730, May 2004 describes a CMOS capacitive sensing amplifier for a monolithic MEMS accelerometer using a differential configuration in 0.5-μm CMOS technology. However, the power consumed in Wu's work is about 30 mW and the supply voltage used is about 5V. B. V. Amini, S. Pourkamali, M. Zaman, and F. Ayazi, “A New Input Switching Scheme for a Capacitive Micro-G Accelerometer”, 2004 VLSI Symposium on Circuits, Digest of Technical Papers, pp. 310-313 describes an input switching capacitive microaccelerometer interface circuit in 0.25 μm CMOS technology in a differential configuration. However, the power consumed in Amini's work is about 6 mW and the supply voltage used is about 2.5V. H. Kulah, J. Chae, N. Yazdi, and K. Najafi, “Noise Analysis and Characterization of a Sigma-Delta Capacitive Microaccelerometer”, IEEE Journal of Solid-State Circuits, vol. 41, no. 2, pp. 352-361, February 2006 describes a sigma-delta capacitive microaccelerometer system in 0.5 μm CMOS technology and in a differential configuration. However, the power consumed in Külah's work is about 7.2 mW and the supply voltage used is about 5V.
Hence, there exists a need for a method for converting a sensor capacitance under parasitic capacitance conditions and a CV converter circuit for converting a sensor capacitance under parasitic capacitance conditions that seek to address at least one of the problems discussed above.
In accordance with one aspect of the present invention, there is provided a method for converting a sensor capacitance under parasitic capacitance conditions, the method comprising the step of using a two stage operational amplifier (op-amp) in non-unity-gain configuration, wherein the two stage op-amp is chosen to be unstable in unity-gain configuration for reducing power consumption.
The method may further comprise using a non-unity-gain reset circuit for performing offset cancellation operations.
A reset may be carried out by modifying a bias current intensity flowing in a first stage of the two stage op-amp.
The method may further comprise using a common-mode feedback (CMFB) circuit for providing fully-differential operations.
The CMFB circuit may comprise a non-unity closed-loop gain.
The non-unity closed-loop gain of the CMFB circuit may be chosen based on a resistive divider and a current gain divider coupled to an output of the op-amp.
Another resistive voltage divider may be used to provide a reference voltage to the CMFB circuit according to a chosen closed-loop gain.
In accordance with another aspect of the present invention, there is provided a capacitance-to-voltage (CV) converter circuit for converting a sensor capacitance under parasitic capacitance conditions, the converter circuit comprising a two stage op-amp in non-unity-gain configuration, wherein the two stage op-amp is chosen to be unstable in unity-gain configuration for reducing power consumption.
The converter circuit may further comprise a non-unity-gain reset circuit for performing offset cancellation operations.
The non-unity reset circuit may comprise at least two switches having different impedances such that activating the reset circuit generates a non-unity gain ratio across the converter circuit.
The converter circuit may further comprise a reset circuit for modifying a bias current intensity flowing in a first stage of the two-stage op-amp.
The reset circuit may comprise a switch implemented in a biasing current branch of the first stage such that activating the switch modifies the biasing current intensity flowing in the first stage of the two-stage op-amp.
The converter circuit may further comprise a CMFB circuit for providing fully-differential operations.
The CMFB circuit may comprise a non-unity closed-loop gain.
The CMFB circuit non-unity closed-loop gain may be chosen based on a resistive divider and a current gain divider coupled to an output of the op-amp.
Another resistive voltage divider may be used to provide a reference voltage to the CMFB circuit according to a chosen closed-loop gain.
Embodiments of the invention will be better understood and readily apparent to one of ordinary skill in the art from the following written description, by way of example only, and in conjunction with the drawings, in which:
a) is a schematic circuit diagram of an input stage of an operational amplifier (op-amp) of the CV converter circuit.
b) is a schematic circuit diagram of an output stage of the op-amp.
a) is a schematic diagram showing a functional effect of the CMFB circuit architecture in
b) is a graph showing an open loop gain and a feedback factor of a CMFB feedback loop in the example embodiment, for explaining the CMFB operation principle.
a) is a schematic diagram illustrating a non-unity-gain reset feedback scheme using two switches in the example embodiment.
b) is a schematic circuit diagram representing the switches of
a) is a Bode graph showing open-loop gain (in dB) and phase (in degrees) as functions of frequency (in Hz) of another implementation of the example embodiment.
b) is a Bode graph showing open-loop gain (in dB) and phase (in degrees) as functions of frequency (in Hz) of a typical CV converter CMFB circuit.
The example embodiment described below can provide an operational amplifier (op-amp) that produces low-noise, consumes low-power as well as is able to operate in low-voltages (e.g. lower than 1.8V). That is, transistors in the op-amp are able to work in weak inversion. The example embodiment can provide an implantable integrated circuit that can deal with weak bio-electrical and bio-mechanical signals which are typically low-frequency signals. The example embodiment can provide good linearity, high-resolution and effective noise rejection. The example embodiment can provide fully-differential architectures to achieve a high common-mode rejection ratio (CMRR) and a power supply rejection (PSRR) ratio with high-linearity. In addition, the example embodiment can provide an improved signal-to-noise ratio (SNR) with an op-amp output being rail-to-rail. The example embodiment can make use of a class AB output stage and obtain higher power efficiency. The example embodiment can achieve high-gain while using a low-voltage power supply. The example embodiment utilises a two-stage op-amp. In the example embodiment, for achieving low-noise, a continuous-time signal processing and/or chopper techniques can be used.
In addition, the example embodiment can deal with high parasitic input capacitance (e.g. due to the interconnection between a capacitive sensor and ASIC) to achieve a high-resolution (e.g. 16 bit) and high-bandwidth (for chopper stabilisation) circuitry while consuming a low current (e.g. less than 100 μA) with a 1.5V supply voltage, by using a two-stage op-amp.
Furthermore, the example embodiment can address bandwidth requirements for reducing gain losses that can arise due to chopper operations. The example embodiment can also address power overhead/consumption that can arise when a second amplifier stage is used.
The example embodiment described herein can provide electronic circuits associated with CV converter circuits and fully-differential high-resolution low-voltage and low-power versions of these circuits for use in continuous-time capacitive sensor readout circuits for biomedical applications and/or other capacitive readout architectures. The example embodiment can also enhance the power efficiency of a CV converter coupled to an external capacitive sensor.
The example embodiment can provide a CV converter architecture that implements a low-noise continuous-time approach and a class-AB output stage that maintains a desirable low quiescent current. The architecture can produce a rail-to-rail output voltage swing and can be capable of operating at a low supply voltage.
In the example embodiment, the MEMS sensor 104 generates a capacitance change proportional to the acceleration sensed. By driving the MEMS sensor 104 with a voltage alternating between 0 and Vdrv, a current Iin having magnitude proportional to the capacitance change flows into and out of the CV converter circuit 102. This process can be viewed as up-converting the capacitance change signal residing in a baseband (e.g. 0 to 1 kHz) to the vicinity of a driving voltage alternation frequency. In this case, driving the MEMS sensor 104 in such a way with a square voltage wave has the same purpose as implementing an input chopper used for the so-called chopper stabilisation technique.
In the example embodiment, the up-converted current is integrated by an integrating capacitor Cint e.g. 116 coupled between an output and an input of the op-amp 106 in the CV converter circuit 102. The integration thus generates an output voltage signal Vout (=Vout+−Vout−) proportional to the capacitance change sensed in the MEMS sensor 104. An impedance Rbias e.g. 107 is connected in parallel to Cint and is used to define a bias voltage at the high impedance input nodes of the CV converter circuit 102. The chopping frequency as well as the required resolution can be used to set the minimum bandwidth requirements for the op-amp 106 for the CV converter circuit 102.
In the example embodiment, the output noise spectrum density of the continuous-time CV converter circuit 102 can be approximated by the following equation (eq. 1) after down-conversion:
where Cin,amp is the input parasitic capacitance of the op-amp 106, Sn,amp is the input referred white noise spectral density of the op-amp 106, fk is the flicker noise corner frequency of the op-amp 106, fchop is the chopping frequency for the chopper stabilised CV converter circuit 102. Cs refers to the capacitance of each sense capacitor e.g. 114 of the MEMS sensor 104 and Cint refers to the capacitance of each integration capacitor e.g. 116 of the CV converter circuit 102. Cp is the parasitic capacitance e.g. 120 at the sense node due to e.g. the MEMS intrinsic parasitic capacitance and interconnection between the MEMS sensor 104 and the CV converter 102.
The input referred noise spectrum density of a fully differential op-amp can be approximated by:
where gm,eq is the equivalent transconductance of the input differential pair of transistors in the op-amp.
It has been recognised by the inventors, that to achieve a large SNR, the input op-amp transconductance gm,eq is desired to be as high as possible, thereby incurring large biasing currents. In addition, the op-amp output is desired to be rail-to-rail. Further, the op-amp open-loop gain is desired to be high so that high-linearity and low-gain error can be obtained. Thus, in the example embodiment, a two-stage folded-cascode op-amp is used with a rail-to-rail output stage and a wide-swing input common-mode range (i.e. to be less sensitive to input common-mode voltage drift due to current leakage at a high impedance input node).
In relation to stability problems of conventional two stage op-amps, generally at the design phase, attention is paid to possible problems of frequency response. To design a stable two-stage op-amp in a unity-gain configuration, the transconductance gm1,eq and gm2,eq (i.e. equivalent transconductance of the first and second stages respectively), the load CL and the compensation capacitance Cc (assuming a Miller compensation approach) should satisfy the following condition [as discussed in Willy M. C. Sansen, “Analog Design Essentials”, Springer 2007, p 149-180]:
An op-amp that satisfies eq. 3 typically has a resulting large output quiescent current which gives rise to poor power efficiency.
It will be appreciated by a person skilled in the art that a two-stage op-amp is typically designed to be stable in a unity-gain configuration so as to ensure the op-amp stability regardless of the feedback, since the unity-gain configuration is a worst case scenario. Besides, designing an op-amp that is not stable in the unity-gain configuration assumes that a non unity-gain feedback condition is always held during any period of the system operation. However, typically during reset phases, the op-amp is configured in a different way, involving a unity-gain feedback arrangement. Further, in the case of a fully-differential op-amp, it will be appreciated that one has to take into consideration the stability of the CMFB circuit loop (ie. the CMFB feedback loop is not the same as the main op-amp feedback loop), the CMFB circuit loop being in a unity-gain configuration. As a consequence, using a non-stable op-amp in the unity-gain configuration typically results in a poorer stability behaviour for the CMFB circuit as the CMFB circuit loop includes the op-amp itself. Thus, in view of the above considerations, a two-stage op-amp is typically designed to be stable in the unity-gain configuration.
An alternative approach is described in U.S. Pat. No. 5,990,748 for providing an adaptive self-compensated two-stage op-amp that is stable in a unity gain configuration that requires higher power consumption to reduce the generated noise. This approach provides a way to self-compensate a single-ended op-amp accordingly with the feedback factor, or the closed-loop gain, so as to maximize the bandwidth for a given power consumption. U.S. Pat. No. 5,990,748 does not propose any solution in the case of a fully-differential architecture, and more particularly, any solution on how to deal with the CMFB loop stability.
In low-power CMOS design, transistors work in moderate- and/or weak-inversion region. Thus, for a given current, the transconductance is substantially independent of the overdrive voltage [as discussed in Gray, Hurst, Lewis, Meyer, “Analysis and Design of Analog Integrated Circuits”, John Wiley & Sons, Fourth Edition 2004, p 68-69]. In addition, the op-amp gain-bandwidth (GBW) product is desired to be high compared to the chopping frequency so as to minimize gain error and/or gain variation. The op-amp gain bandwidth product is given by:
The op-amp closed-loop bandwidth is related to the integration capacitance Cint e.g. 116, the input parasitic capacitance Cp e.g. 120 and the sense capacitance Cs e.g. 114.
It has been recognised by the inventors that, in an exemplary accelerometer with external MEMS sensors (assuming that the MEMS and the ASIC are not designed on the same silicon substrate), parasitic capacitance can be equal to a few pico-Farad up to hundreds of pico-Farad. Therefore, the closed-loop gain of a CV converter used with the exemplary accelerometer is always greater than one. This follows from the closed-loop gain equation, eq. 5, below:
In the example embodiment, the following values are set, Cs=0.9 pF, Cpmax=5 pF and Cint=200 fF. The value of Cint is chosen so as to maximize the output voltage with regard to e.g. a maximum input acceleration (e.g. 6.5 g) of an accelerometer. Thus, the closed-loop gain in the example embodiment can be as low as about 10 and as high as about 35 depending on the value of Cp.
The inventors have further recognised that for the two-stage op-amp in the example embodiment, there is no need to ensure stability in the unity gain configuration for the CV converter circuit 102 to be stable when it is working to sense capacitance change. The example embodiment uses a two-stage op-amp in non-unity gain configuration, wherein the two-stage op-amp is intentionally chosen to be unstable in unity-gain configuration for reducing power consumption.
a) is a schematic circuit diagram of an input stage 202 of the op-amp 106 (
b) is a schematic circuit diagram of an output stage 208 of the op-amp 106 (
By having a non-unity closed-loop gain, an additional advantage is that the power consumption of the second stage 208 can be reduced by almost one order of magnitude. It is repeated here that in contrast to U.S. Pat. No. 5,990,748, the CV converter circuit 102 (
If the closed-loop gain GCL is greater than 1 (ie. non-unity), then eq. 3 becomes:
In weak inversion, eq. 6 can be interpreted as a reduction of the output quiescent current by a factor GCL, which improves substantially the power efficiency of the CV-converter circuit 102 (
It will be appreciated that a fully-differential op-amp uses a CMFB circuit to operate properly. Typically, a CMFB circuit senses the output common-mode voltage of a fully-differential amplifier and provides a common-mode control signal which controls some current biasing structures within the differential amplifier to maintain a proper common-mode output voltage, and hence a correct fully-differential operation. Thus, typically, the CMFB loop-gain is equal to unity. In contrast, in the example embodiment, the common-mode sense circuit comprises a resistive network which is designed in such a way so as to provide a non-unity CMFB loop-gain.
In the example embodiment, as the common-mode control signal 118 is connected to node 214 of the op-amp first stage 202, the CMFB stability is improved by increasing the ratio (W/L)MA/(W/L)MB (see numeral 218 of
It is noted that large current biasing for the CMFB circuit is to be avoided, to reduce the overall power consumption. Thus, in contrast, in the example embodiment, to improve further the CMFB stability while consuming low-power, the CMFB closed-loop gain is also increased to be non-unity by modifying the feedback resistive network 504. In this configuration, the closed-loop gain is directly proportional to (n+1) (refer to resistors 506, 508, 510, 512, 514). In the example embodiment, the purpose of the resistive voltage divider network 502 is to provide desired reference voltages to the CMFB according to a chosen closed-loop gain. The closed loop gain is chosen so as to achieve a required stability. The closed loop gain not only depends on the differential amplifier 106 (
In addition, by providing the additional bias voltage 516 which is non-zero, the power efficiency of the resistive network 504 can be improved. The inventors have recognised that since large-valued resistors are difficult to be implemented in IC technology due to area constraints, reducing the voltage applied across the resistive divider circuit network 502 is an effective way to reduce current consumption. Therefore, using the CMFB biasing circuit architecture with network 502, both passive power consumption and silicon area consumption can advantageously be reduced.
a) is a schematic diagram showing the effect of the CMFB circuit architecture in
b) is a graph showing the effect of the non-unity-gain CMFB on the loop gain of the CMFB feedback loop and its stability. A curve 608 represents the CMFB loop gain and the frequencies fp1 614 and fp2 618 are the first and second poles respectively. The effect of using the CMFB circuit architecture (compare
Having described how the CMFB circuit stability can be improved, the following paragraphs describe the non-unity gain reset feedback circuit 108 (
In the example embodiment, having provided a CV-converter op-amp 106 (
Therefore, to avoid entering the unity gain configuration during the reset phase, the non-unity-gain reset feedback circuit 108 (
a) is a schematic diagram illustrating the non-unity-gain reset feedback scheme using two switches for each reset feedback path. A first switch MS1 702 and a second switch MS2 704 are implemented with MOSFETs in this example embodiment. During the reset phase, a signal φreset 706 is asserted such that MS1 702 and MS2 704 are turned on and operate in a linear region. A bias voltage VCM,input 708 is connected to one end of MS2 704 to define the input common-mode voltage, which is usually set such that VCM,input=VCM,output (output common-mode voltage)=0.5×VDD, where VDD is the voltage supply. The MOSFET switches MS1 702 and MS2 704 are sized such that (WV/L)MS1:(W/L)MS2=K:1 and hence, a loop gain of K (>1) can be obtained (i.e. non-unity gain). (W/L)MS1 and (W/L)MS2 are the ratios between channel width W and length L of MOSFETs MS1 and MS2, respectively. In the example embodiment, MS1 702 corresponds to S1,reset and MS2 704 to S2,reset in
b) is a schematic circuit diagram representing the reset switches in
Alternatively, instead of manipulating the closed-loop gain of the reset switch network or the reset circuit 108 (
Thus, the example embodiment described above can achieve a high-resolution (e.g. 16 bit) and a wide-bandwidth (for chopping purposes) circuitry while consuming a low-current (e.g. less than 100 μA) with a low 1.5V supply voltage, by using a two-stage op-amp. The example embodiment described above can meet bandwidth requirements to avoid gain losses that can arise due to chopping. The example embodiment described above can also reduce power overhead/consumption that arises from using a second amplifier stage and a fully-differential architecture.
In one implementation of the above example embodiment, it is found that power consumption of a second amplifier stage is reduced from about 150 μW operating in a unity gain configuration to about 30 μW operating in a non-unity gain configuration. That is,
Total power consumption Ptotal=(P1st-stage+P2nd-stage) was reduced from (48 μW+150 μW) to (48 μW+30 μW), where P1st-stage and P2nd-stage are the power consumed in the 1st folded-cascode stage and the 2nd class-AB stage, respectively.
Table 1 below summarizes the CV converter circuit performances in another implementation of the above example embodiment.
The inventors have recognised that if the non-unity-gain reset feedback circuit 108 (
Table 2 summarizes the simulation results of phase margin of another implementation of the example embodiment obtained for different closed-loop gain values for the op-amp and different output stage biasing currents. Particularly, it shows that to obtain a phase margin of about 70°, for a closed-loop gain of 10, the biasing current of the output stage is about 7 μA compared to about 3 μA only for a closed-loop gain of 20. This can advantageously reduce the power consumption of the class-AB output stage. The column showing the phase margin for the closed loop gain of 0 dB is used to show the improvement in terms of phase margin of the example implementation in a non-unity gain configuration over a control circuit in a unity gain configuration consuming the same current. For example, for a closed-loop gain of 0 dB, a phase margin of 67 can only be obtained at the cost of 50 μA current consumption at the output stage for the control circuit while less than 7 μA is consumed for the example implementation when the closed-loop gain is 10 dB.
73
71
67
a) is a Bode graph 1102 showing open-loop gain (in dB) and phase (in degrees) as functions of frequency (in Hz) of another implementation of the example embodiment.
The
Table 3 below tabulates the performance of another implementation of the example embodiment. As can be observed, the implementation consumes very low power and supply voltage while providing excellent performance ie. generating low noise, low distortion, and having a large dynamic range. Dynamic range or DR is defined to be Power(Max signal output)/Power(noise floor).
Furthermore, a figure of merit (FOM) is defined as follows in S. Rabii, B. A. Wooley, “A 1.8-V Digital-Audio Sigma-Delta Modulator in 0.8-μm CMOS”, IEEE J. Solid-State Circuits, vol. 32, no. 6, pp. 783-796, June 1997:
where kB is the Boltzmann constant, DR is the dynamic range, BW is the bandwidth of the signal of interest (e.g. vibrations in the case of accelerometers) and power is the total power consumption of a device.
Experimental results show that the FOM for the example implementation is about 500.
The above described example embodiment provides a two-stage Capacitance-to-Voltage (CV) amplifier comprising an input stage, a class-AB output stage, a CMFB, an integrator capacitance feedback, a reference bias voltage circuitry used for the CMFB and a reset circuit. The above described example embodiment provides an amplifier whereby the stability requirements are not met for the unity gain configuration but can operate in a higher gain configuration in order to take into account parasitic capacitors due to a MEMS and ASIC packaging. The reset circuitry is designed so as not to configure the amplifier in a unity gain configuration during the CV amplifier reset phase. The bias current of the first input can also be reduced during the reset phase to fulfil the unity-gain stability requirement. The CMFB can provide a closed loop gain that is greater than one using both a resistive divider and a current gain divider, based on a current mirror ratio between the CMFB and the main differential amplifier (compare
The above example embodiments can achieve a high-resolution (e.g. 3.3 aF) converter circuit while consuming low-power e.g. 120 μW. The power consumption is significantly smaller than typical CV-converter designs. The example embodiment can achieve such low-power consumption because the example embodiment has a CV-converter architecture that can take into account the non-unity gain feedback circuitry including signals from the MEMS sensor. Further, the example embodiment can function using a low supply voltage e.g. 1.35V while typical CV-converters usually require 3V or 5V. Thus, the example embodiment is relatively more compatible for e.g. biomedical embedded systems. In addition, the example embodiment can provide a fully differential op-amp that functions in a non-unity-gain closed loop. Such architecture can be used in accelerometers and gyroscopes based on capacitive MEMS sensors.
It will be appreciated by a person skilled in the art that numerous variations and/or modifications may be made to the present invention as shown in the specific embodiments without departing from the spirit or scope of the invention as broadly described. The present embodiments are, therefore, to be considered in all respects to be illustrative and not restrictive.
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/SG2008/000358 | 9/19/2008 | WO | 00 | 9/22/2011 |