Claims
- 1. A method for creating a reconfigurable nanometer-scale electronic network comprising the steps of: depositing nanometer-scale electrically conducting islands on a silicone dioxide insulating substrate,forming a semiregular array of current conducting elements attached to said nanometer-scale electrically conducting island; selecting individual nodes for bond breaking by applying electrical currents through two orthogonal molecular filaments, this current heating both the molecules and islands raising a temperature of the current-conducting elements at individual nodes and breaking bonds in accordance with a preselected network design; and repeating the step of selecting individual nodes for bond breaking to produce thereby the nanometer-scale electronic network.
- 2. The method of claim 1, wherein the depositing step is conducted using a procedure selected from a group consisting of: evaporation, chemical vapor deposition, colloidal suspension deposition and molecular heam epitaxi.
- 3. The method of claim 2, wherein the deposition step comprises depositing islands a few tens of nanometers high and wide and composed by molecules including silicon and gallium arsenide said islands being deposited by evaporation.
- 4. A method for creating a reconfigurable nanometer-scale electronic network, as defined in claim 2, further comprising a step of having additional force applied to selected molecules with a magnetic field, B, in the plane of the substrate; these fields will induce out-of-plane forces, F, on only those molecules which are carrying current according to:F=IL×B where L is a vector representing a length of the selected molecule.
STATEMENT OF GOVERNMENT INTEREST
The invention described herein may be manufactured and used by or for the Government for governmental purposes without the payment of any royalty thereon.
US Referenced Citations (7)