Claims
- 1. A method for electric recording which comprises contacting a receptor sheet with one surface of an electric recording material, said electric recording material comprising:
- (A) a semiconductive resin layer comprising a resin matrix and a conductivity-imparting agent dispersed therein and having a surface resistance of more than 1 ohm to less than 10.sup.5 ohms and a volume resistance of not more than 10.sup.3 ohms-cm which surface resistance and volume resistance parameters are such as to render the electric recording material effective for electric recording at voltages not more than 90 V,
- (B) a metal-containing resin layer comprising a resin matrix and 5 to 60% by volume of a metal powder dispersed therein and having a surface resistance of 10.sup.5 to 10.sup.16 ohms and a volume resistance of not more than 10.sup.4 ohms-cm, said metal-containing layer being laminated to one surface of said semiconductive resin layer (A), said metal powder being stable and electrically conductive and having a specific resistance of not more than 2.times.10.sup.-4 ohms-cm and an average particle diameter of from 0.2 to 20 microns,
- (C) an electrically conductive covering layer having a surface resistance not exceeding 10.sup.4 ohms and a volume resistance of not more than 10.sup.2 ohms-cm, the surface resistance being lower in said covering layer (C) then in said semiconductive resin layer (A), said covering layer being laminated to the other surface of said resin layer (A) and comprising a resin matrix and a conductivity-imparting agent dispersed therein, or a vacuum-deposited metal film or a metal foil, and
- (D) optionally, a protective covering resin layer having a higher surface resistance than that of said covering layer (C), a volume resistance of not less than 10.sup.2 ohms-cm and a thickness of not more than 10 microns, said protective covering layer being laminated to said conductive covering layer (C);
- contacting a recording stylus with the other surface of the electric recording material, and applying a voltage of not more than 90 V to the recording material through said recording stylus, thereby breaking down said semiconductive resin layer (A) and said conductive covering layer (C) of said recording material and also said protective layer (D) if it is present, and thus transferring the broken layers to said receptor sheet.
- 2. A method according to claim 1 in which the surface resistance of the semiconductor resin layer is 10.sup.3 to 10.sup.4 ohms.
- 3. A method according to claim 1 wherein said conductivity-imparting agent is carbon black.
- 4. A method according to claim 1 wherein said semiconductive resin layer (A) has a surface resistance in the range of 10.sup.2 to 10.sup.5 ohms.
- 5. A method according to claim 1 wherein said semiconductive resin layer (A) further comprises an inorganic filler.
- 6. A method according to claim 5 wherein the amount of the inorganic filler is 10 to 1000 parts by weight per 100 parts by weight of the resin matrix.
- 7. A method according to claim 1 wherein said semiconductive resin layer (A) further comprises a thermoplastic resin having a lower melting point than the resin matrix.
- 8. A method according to claim 7 wherein said lower-melting thermoplastic resin has a melting point in the range of 30.degree. to 100.degree. C.
- 9. A method according to claim 7 wherein the amount of the lower-melting thermoplastic resin is 100 to 500 parts by weight per 100 parts by weight of the resin matrix.
- 10. A method according to claim 1 wherein said semiconductive resin layer (A) has a thickness in the range of 1 to 70 microns.
- 11. A method according to claim 1 wherein the metal-containing resin layer (B) has a surface resistance in the range of 10.sup.9 to 10.sup.14 ohms.
- 12. A method according to claim 1 wherein said metal-containing resin layer (B) has a thickness in the range of 5 to 7 microns.
- 13. A method according to claim 1 wherein said vacuum-deposited metal film is a vacuum-deposited aluminum film.
- 14. A method according to claim 1 wherein the ratio of the surface resistance of the semiconductive resin layer (A) to that of the conductive covering layer (C) is from 10:1 to 10.sup.4 :1.
- 15. A method according to claim 1 wherein said conductive covering layer (C) has a thickness in the range of 1 to 50 microns.
- 16. A method according to claim 1 wherein said protective covering layer (D) comprises a resin matrix and a conductivity-imparting agent dispersed therein.
- 17. A method according to claim 16 wherein said conductivity-imparting agent is carbon black.
- 18. A method according to claim 1 wherein said protective covering layer (D) has a thickness of not more than 5 microns.
- 19. A method according to claim 1 wherein the ratio of the surface resistance of said protective covering layer (D) to that of the said conductive covering layer (C) is 10.sup.2 :1 or higher.
- 20. A method according to claim 1 wherein said protective covering layer (D) has a surface resistance in the range of 10.sup.2 to 10.sup.16.
- 21. A method according to claim 1 wherein at least one of the semiconductive resin layer (A), the conductive covering resin layer (C) and optionally the protective covering resin layer (D) contains a coloring substance.
- 22. A method according to claim 21 wherein the coloring substance is selected from the group consisting of carbon blacks, organic and inorganic pigments, and dyes.
Priority Claims (3)
Number |
Date |
Country |
Kind |
53-95,547 |
Aug 1978 |
JPX |
|
53-164256 |
Dec 1978 |
JPX |
|
54-3300 |
Jan 1979 |
JPX |
|
Parent Case Info
This is a Divisional Application of Ser. No. 62,576, filed July 31, 1979, now U.S. Pat. No. 4,308,314.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4163075 |
Nakano et al. |
Jul 1979 |
|
4308314 |
Nakano et al. |
Dec 1981 |
|
Divisions (1)
|
Number |
Date |
Country |
Parent |
62576 |
Jul 1979 |
|