J. A. M. Dikhoff, Philips Technische Rundschau, vol. 25, No. 12, pp. 441 to 454, "Inhomogenities in doped germanium and silicon crystals", 1963/64, (with partial English translation). |
H. Foll, Appl. Phys. Lett, vol. 37, No. 3, pp. 316 to 318, "Anodic Etching of p-Type Silicon as a Method for Discriminating Electrically Active and Inactive Defects", Aug. 1, 1980. |
G. A. James, et al., IBM Technical Disclosure Bulletin, vol. 14, No. 11, p. 3261, "Electrochemcial Method for the Measurement of Epitaxial Film Thickness", Apr. 1972. |