1. Field of the Invention
This invention relates in general to thin films for use in magnetic storage devices, and more particularly to thin film fabrication methods and even more particularly to thin film fabrication methods for increasing corrosion resistance of metallic thin film.
2. Description of Prior Art
A typical prior art head and disk system 10 is illustrated in
The metallic components of GMR heads are susceptible to corrosion both in the file environment, and during slider fabrication process. When the rows are cut from the wafer the metallic thin films are exposed and lapping is typically performed. Corrosion has typically been addressed in part by adding a thin protective layer of carbon or silicon over the films after lapping. One drawback of adding the protective layer is that it inherently adds to the spacing between the magnetic sensor and the magnetic media, since the overcoat is typically about 5–7 nm. Increased performance requires smaller sensor to media spacing and thinner overcoats which in turn decrease corrosion reliability. Elimination of the overcoat is desirable for magnetic performance, if alternatives for corrosion resistance can be found.
Not all alloys useful in magnetic heads have the same degree of susceptibility to corrosion, so it is possible to select materials with higher corrosion resistance. In U.S. Pat. No. 4,904,543 Sakakima, et al., describe the use of “nitrided-alloy” layers in magnetic thin film heads to improve resistance to corrosion and wear. A nitrogen-free Fe alloy target with or without additive elements is subjected to sputtering first in an atmosphere of Ar gas for a time sufficient to form a nitride-free Fe alloy layer on a substrate in a desired thickness and then nitrogen gas is added to a level of from 0.1 to 50% by partial pressure, so that a nitrided-alloy layer is formed on the nitride-free Fe alloy layer.
Baur, et al., have described in U.S. Pat. No. 6,436,248 the use of a barrier layer deposited on the substrate before the underlayer films to increase the corrosion resistance of metallic substrate magnetic disks. Preferably the barrier layer is deposited by medium frequency pulsed sputtering at a frequency of 10 to 200 kHz and a pulse length to pulse pause ratio from 5:1 to 1:10. Aluminum or chromium are the preferred materials for the barrier layer. Additional improvements are said to be achieved when the sputtering process gas contains a proportion of oxygen and/or nitrogen
In U.S. Pat. No. 4,130,847 Head, et al., teach the use of a layer of passivating material such as chromium which is sputter deposited over the pole tips of the transducer to prevent the corrosion of the iron-nickel alloy comprising the pole tips. A portion of the end tips of the pole pieces and the gap of the thin film inductive transducer is etched by a sputter etching process prior to deposition of the chromium.
A process will be described for fabricating magnetic transducers with metallic thin films with a corrosion resistant surface produced by exposing the thin films to a nitrogen gas in a plasma chamber. The exposure to the nitrogen is believed to increase the corrosion resistance of the metallic thin films by causing nitrides to form in a thin surface region. In the preferred embodiment the thin film metals of a magnetic transducer are treated with the nitrogen gas after being cut from the wafer and lapped. Typical metals used in magnetic transducers are NiMn, FeMn, NiFe, cobalt, CoFe and copper. The films may be further protected by the addition of prior art protective layers such as carbon.
For a more complete understanding of the nature and advantages of the invention, as well as the preferred modes of use, reference should be made to the following detailed description read in conjunction with the accompanying drawings. In the following drawings, like reference numerals designate like or similar parts throughout the drawings.
The invention can be used with any magnetic transducer (head) structure that includes metallic thin films which are exposed by the process of separating the sliders from the wafer. The internal structure of the magnetic transducer elements 20 in
Various prior art equipment used in thin film processing which generate a plasma and have at least two electrodes can be used to create the nitrogen containing plasma. For example, plasma-cleaning chambers, physical vapor deposition (PVD) chambers and chemical vapor deposition (CVD) can be used to treat the metallic surfaces with nitrogen according to the invention. The formation and use of the plasma are according to prior art techniques. The plasma, which is a mixture of ions and electrons, may be formed by applying energy, such as radio frequency (RF) or microwave energy to a process gas in the vacuum deposition chamber under the appropriate conditions. The applied energy forms ionic species from the molecules in the chamber and ignites the plasma. In general, reaction rates in plasma processes may be controlled by varying one or more of the process parameters such as: temperature, partial pressures, plasma density, gas flow rate, power frequency, power levels, chamber physical geometry, etc. As is well known in the art, precise process parameters for a desired result with a given apparatus are typically determined empirically. Therefore, the equipment and parameters used by the applicants as described below can only be used as an example to suggest starting points to those skilled in the art in working with their own equipment, materials and performance targets. In the particular process used by the applicants, a plasma-cleaning chamber was used. Approximately 100–500 Watts were applied to an essentially pure N2 gas with a partial pressure of about 100–300 mTorr. In the preferred embodiment the thin film metals of partially completed magnetic transducers are surface treated with nitrogen plasma after have been separated from the wafer (typically by sawing the wafer into rows) and after lapping. At this point in the prior art fabrication process the outer edges of thin films of the transducers are exposed on the lapped surface as illustrated in
Although nitrogen is the active element, other elements may be present in the plasma, so long as they do not interfere with the incorporation of nitrogen into the thin films. For example, the plasma may include helium, hydrogen and/or ammonia, among others. This allows the nitrogen may be introduced into the chamber as N2 or it may be derived from another compound such as ammonia which will be ionized in the chamber to produce nitrogen ions.
The thin films that can benefit from the treatment according to the invention include any metal which will chemically bond with nitrogen. The metals which are typically preferred for use in GMR heads are NiMn, FeMn, NiFe, cobalt, CoFe, copper, IrMn, and PtMn. After the thin films have been treated by exposure to nitrogen as indicated, one or more optional protective overcoat may be applied according to the prior art.
To test the corrosion resistance an experiment was done on magnetic transducers with a NiMn layer in order to compare the corrosion behavior with and without nitrogen treatment. An overcoat was not applied to any of the test transducers. The experiment called for exposing the magnetic transducers for two days to 90% relative humidity at 50 degree C. Change in the electrical resistance of the GMR sensor was used as a measure of the corrosion. Although changes in the other metallic films such as the shields were not measured directly, it is reasonable to believe that the metals of the shields will behave similarly to sensor layer. The threshold of one Ohm change was used as the marker of the initiation of corrosion activities. The bar graph in
It is important to note that the nitrogen-treated transducers as described above had no significant change in the resistance or amplitude values for the GMR stripe.
Except where express materials, thickness values, etc., have been given above, the layers, structures and materials in a slider embodying the invention are according to the prior art and are fabricated according to the prior art. The compositions given herein have been described without regard to small amounts of impurities that are inevitably present in practical materials as is well known to those skilled in the art. Although the invention has been described in a particular embodiment, the invention is not limited to these embodiments and various changes and modifications will be apparent to those skilled in the art which will be within the scope of the invention.
Number | Name | Date | Kind |
---|---|---|---|
4110114 | Sato | Aug 1978 | A |
4130847 | Head et al. | Dec 1978 | A |
4285894 | Watanabe et al. | Aug 1981 | A |
4336316 | Sato | Jun 1982 | A |
4460415 | Korhonen et al. | Jul 1984 | A |
4900622 | Nakayama et al. | Feb 1990 | A |
4904543 | Sakakima et al. | Feb 1990 | A |
5062900 | Berneron et al. | Nov 1991 | A |
5936814 | Slade et al. | Aug 1999 | A |
6018862 | Stageberg et al. | Feb 2000 | A |
6121150 | Avanzino et al. | Sep 2000 | A |
6140234 | Uzoh et al. | Oct 2000 | A |
6163437 | Inage et al. | Dec 2000 | A |
6194323 | Downey et al. | Feb 2001 | B1 |
6297147 | Yang et al. | Oct 2001 | B1 |
6436248 | Baur et al. | Aug 2002 | B1 |
6661623 | Tsuchiya et al. | Dec 2003 | B1 |
Number | Date | Country |
---|---|---|
03278480 | Dec 1991 | JP |
08124116 | May 1996 | JP |
08167104 | Jun 1996 | JP |
Number | Date | Country | |
---|---|---|---|
20040066573 A1 | Apr 2004 | US |