Method for fabricating a magnetic writer having half-side shields

Information

  • Patent Grant
  • 8988825
  • Patent Number
    8,988,825
  • Date Filed
    Friday, May 16, 2014
    10 years ago
  • Date Issued
    Tuesday, March 24, 2015
    9 years ago
Abstract
A method and system provide a magnetic transducer having an air-bearing surface (ABS) location. An intermediate is provided. The intermediate layer includes a first sublayer and a second sublayer in at least a side shield region. The first sublayer has a first sublayer top. The second sublayer is on the first sublayer top in the shield region. A trench is formed in the intermediate layer using at least one etch. A main pole is provided in the trench. The main pole has a bottom and a top wider than the bottom. The first sublayer top is between the top and the bottom of the main pole. At least a portion of the second sublayer is removed in the shield region. At least one half side shield is provided. A bottom of the at least one half side shield being between the top and the bottom of the main pole.
Description
BACKGROUND


FIG. 1 depicts an air-bearing surface (ABS) view of a conventional magnetic recording transducer 10. The magnetic recording transducer 10 may be a perpendicular magnetic recording (PMR) head. The conventional transducer 10 includes an underlayer 12, side gap 14, side shields 16, top gap 17, optional top, or trailing, shield 18 and main pole 20.


The main pole 20 resides on an underlayer 12 and includes sidewalls 22 and 24. The sidewalls 22 and 24 of the conventional main pole 20 form an angle α0 with the down track direction at the ABS. The side shields 16 are separated from the main pole 20 by a side gap 14. The side shields 16 extend at least from the top of the main pole 20 to the bottom of the main pole 20. The side shields 16 also extend a distance back from the ABS. The gap 14 between the side shields 16 and the main pole 20 may have a substantially constant thickness. Thus, the side shields 16 are conformal with the main pole 20.


Although the conventional magnetic recording head 10 functions, there are drawbacks. In particular, the conventional magnetic recording head 10 may not perform sufficiently at higher recording densities. For example, at higher recording densities, a shingle recording scheme may be desired to be sued. In shingle recording, successive tracks partially overwrite previously written tracks in one direction only. Part of the overwritten tracks, such as their edges, are preserved as the recorded data. In shingle recording, the size of the main pole 20 may be increased for a given track size. However, in order to mitigate issues such as track edge curvature, shingle writers have very narrow side gaps 14. Other design requirements may also be present. The magnetic transducer 10 may not perform as desired or meet the design requirements for such recording schemes. Without such recording schemes, the conventional transducer 10 may not adequately perform at higher areal densities. Accordingly, what is needed is a system and method for improving the performance of a magnetic recording head.





BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS


FIG. 1 depicts an ABS view of a conventional magnetic recording head.



FIG. 2 depicts a flow chart of an exemplary embodiment of a method for providing a magnetic recording transducer having a half side shield.



FIGS. 3A, 3B, 3C and 3D depict side, ABS, yoke and apex views of an exemplary embodiment of a magnetic recording disk drive.



FIG. 4 depicts a flow chart of another exemplary embodiment of a method for providing a magnetic recording transducer having half side shields.



FIGS. 5A, 5B and 5C through 19A, 19B, 19C and 19D depict various views of an exemplary embodiment of a magnetic recording transducer fabricated using the method.





DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS


FIG. 2 depicts an exemplary embodiment of a method 100 for providing a magnetic recording transducer. For simplicity, some steps may be omitted, interleaved, combined and/or performed in another order. The method 100 is described in the context of providing a magnetic recording disk drive and transducer 200. However, the method 100 may be used to fabricate multiple magnetic recording transducers at substantially the same time. The method 100 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 100 also may start after formation of other portions of the magnetic recording head. For example, the method 100 may start after a read transducer, return pole/shield and/or other structure have been fabricated.


An intermediate layer including at least two sublayers is provided, via step 102. In at least the region in which the side shields are to be formed (shield region), the intermediate layer includes a first sublayer and a second sublayer. The first and second sublayer may be removed using different processes. The second sublayer is on the first sublayer. In some embodiments, the first sublayer includes silicon oxide, while the second sublayer includes aluminum oxide. A third sublayer may be outside of the shield region. However, the top of the third sublayer is desired to be substantially coplanar with the top of the second sublayer. Stated differently, the top of the intermediate layer is desired to be substantially flat so that fabrication may take place with less variations in topography of the intermediate layer. In some embodiments, the third sublayer may be formed of the same material as the first sublayer. Thus, the third sublayer may include silicon oxide. The first sublayer may thus be considered part of the first sublayer whether the first and third sublayers are formed separately or together. In some embodiments, step 102 includes full-film depositing first and second layers, then removing the portions of these layers outside of the side shield region. The first and second sublayers thus remain in the side shield region. The third sublayer may then be deposited and the layer(s) planarized. Thus, the intermediate layer may be formed.


A trench is formed in an intermediate layer using one or more etches, via step 104. The trench formed has the desired geometry and location for formation of the main pole. For example, the top of the trench may be wider than the bottom so that the top of the main pole may be wider than the bottom. The sidewall angles may also vary. For example, the sidewall angles at and near the ABS may be larger (further from perpendicular to the surface of the intermediate layer) than the sidewall angles in regions recessed from the ABS (termed the yoke herein). For example, the sidewalls may be substantially perpendicular to the bottom of the trench in the yoke region, but twelve to sixteen degrees from the down track direction near the ABS. In other embodiments, other sidewall angles and/or other variations in sidewall angles may be possible. In some embodiments, step 104 controls the sidewall angles through the use of multiple etches and/or etch conditions for each etch. Further, the trench extends at least partially into the first sublayer in the shield region. In some embodiments, some or all of the trench may extend through the first sublayer. Thus, the top of the first sublayer resides between the bottom and the top of the trench.


The main pole is provided in the trench, via step 106. In some embodiments, step 106 includes depositing a seed layer, such as Ru and/or magnetic seed layer(s). High saturation magnetization magnetic material(s) are also provided. For example, such magnetic materials may be plated and/or vacuum deposited. The pole formed in step 106 may be conformal to the trench, nonconformal with the trench, or include both conformal and nonconformal portions. The top of the first sublayer is between the bottom of the main pole and the top of the main pole in the shield region.


At least part of the second sublayer in the shield region is removed, via step 108. Step 108 may be performed using a wet etch appropriate for the second sublayer, but not the first or third sublayers.


The side shield(s) are provided in the shield region, via step 110. Step 110 may include plating or otherwise providing the material(s) for the side shields. The bottoms of the side shields reside on the top of the first sublayer in the shield region. Thus, the side shield(s) extend to a location between the top and the bottom of the main pole. The side shields are thus termed half side shields. Note, however, that the half shields need not extend precisely halfway down between the top and bottom of the main pole. Instead, the half side shields terminate somewhere between the top and bottom of the main pole.


Using the method 100, a magnetic transducer having improved performance may be fabricated. A shingle writer may not need to have side shield(s) which extend to the bottom of the main pole. Thus, the method 100 may provide a main pole that may be used in shingle recording. Thus, the benefits of shingle recording may be exploited. The location of the bottom of the half side shields may be set by the thickness of the first sublayer. Thus, the side shield geometry may be predefined. As such, the method 100 may be simplified.



FIGS. 3A, 3B, 3C and 3D depict various views of a transducer 200 fabricated using the method 100. FIG. 3A depicts a side view of the disk drive. FIGS. 3B and 3C depict AS and yoke views of the transducer 200. FIG. 3D depicts an apex (side/cross-sectional) view of the transducer 200. The “yoke” view shown in FIG. 3C is taken at location x1 shown in FIG. 3D. For clarity, FIGS. 3A-3D are not to scale. For simplicity not all portions of the disk drive and transducer 200 are shown. In addition, although the disk drive and transducer 200 are depicted in the context of particular components other and/or different components may be used. For example, circuitry used to drive and control various portions of the disk drive is not shown. For simplicity, only single components are shown. However, multiples of each components and/or their sub-components, might be used. The disk drive 100 may be a perpendicular magnetic recording (PMR) disk drive. However, in other embodiments, the disk drive 100 may be configured for other types of magnetic recording included but not limited to heat assisted magnetic recording (HAMR).


The disk drive includes a media 202, and a slider 204 on which a transducer 200 have been fabricated. Although not shown, the slider 204 and thus the transducer 200 are generally attached to a suspension. In general, the slider 204 includes the write transducer 200 and a read transducer (not shown). However, for clarity, only the write transducer 200 is shown.


The transducer 200 includes an underlayer 206, an intermediate layer 208, a main pole 210, coil(s) 220 and half shields 230. The underlayer 206 may include a bottom (or leading edge) shield. The coil(s) 220 are used to energize the main pole 210. Two turns are depicted in FIG. 3A. Another number of turns may, however, be used. Note that only a portion of the coil(s) 210 may be shown in FIG. 3A. If, for example, the coil(s) 220 is a spiral, or pancake, coil, then additional portions of the coil(s) 220 may be located further from the ABS. Further, additional coils may also be used.


The intermediate layer 208 may include one or more sublayers. However, one or more of the sublayers may have been removed for formation of the half shields 230. Further, the layers may be vertical and/or may be into the plane of the page. For example, the intermediate layer 208 in the recessed view may be formed of different material(s) than in the ABS view. As can be seen in FIGS. 3B-3C, the top of the intermediate layer 208 is between the top of the main pole and the bottom of the main pole in the shield region.


The main pole 210 is shown as having a top wider than the bottom. The main pole 210 thus includes sidewalls 217 and 218 having sidewall angles, α0 and α1 that are greater than or equal to zero. In the embodiment shown, these sidewall angles differ at different distances from the ABS. In some embodiments, α0 (at the ABS) is at least three degrees and not more than fifteen degrees. In some such embodiments, α0 is at least six and not more than nine degrees. The sidewall angle is larger at the ABS than recessed from the ABS. Although α1 is shown as nonzero, in some embodiments, the sidewall angle for the main pole 210 is zero degrees (substantially vertical sidewalls). For example, α1 may be at least zero degrees and not more than five degrees. In some embodiments, α1 is not more than three degrees. Thus, the sidewall angles may decrease to zero as the distance from the ABS increases. However, in other embodiments, other geometries may be used. For example, the top may be the same size as or smaller than the bottom. The sidewall angles may vary in another manner including, but not limited to, remaining substantially constant. FIGS. 3B and 3C depict the main pole 210 as being conformal with the trench in the intermediate layer 208. In some embodiments, however, at least a portion of the main pole 210 is not conformal with the sides of the trench. In some embodiments, the main pole 210 may have leading surface bevel 214 and/or trailing surface bevels 216, as shown in FIG. 3D.


The half shields 230 are shown as including a trailing shield portion. This is denoted by a dotted line in FIG. 3B. In other embodiments, the trailing shield may be omitted. The half side shields 230 are also shown as having a constant thickness in FIG. 3D. Thus, the dashed line corresponding to the bottom of the half shield 230 is perpendicular to the ABS. In other embodiments, the geometry of the half shields 230 may vary. For example, the shields 230 track the trailing edge of the pole such that the shield covers less of the pole further from the ABS. In other embodiments, the half shield thickness may vary. In such embodiments, the bottom of the half shield 230 may be parallel to the leading bevel 214 or the trailing bevel 216 while the top surface is perpendicular to the ABS. Other variations are also possible. However, note that bottom of the half shield 230 is between the top and bottom of the pole 210


The magnetic transducer 200 in the disk drive may be used in shingle recording. Thus, the benefits of shingle recording may be achieved. For example, higher areal density recording may be performed by a head having larger critical dimensions.



FIG. 4 depicts an exemplary embodiment of a method 150 for providing a pole for a magnetic recording transducer having a half shield. For simplicity, some steps may be omitted, interleaved, performed in another order and/or combined. The method 150 is also described in the context of providing a magnetic recording transducer 250 depicted in FIGS. 5A-5C though FIGS. 19A-19D depict an exemplary embodiment of a transducer 250 during fabrication using the method 150. The method 150 may be used to fabricate multiple magnetic recording heads at substantially the same time. The method 150 may also be used to fabricate other magnetic recording transducers. The method 150 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 150 also may start after formation of other portions of the magnetic recording transducer. For example, the method 150 may start after a read transducer, return pole/shield and/or other structure have been fabricated.


The material(s) for the first sublayer are full-film deposited, via step 152. In some embodiments, step 152 includes full-film depositing silicon oxide. The material(s) for the second sublayer are full-film deposited, via step 154. Step 154 may include depositing aluminum oxide on the silicon oxide layer. FIGS. 5A, 5B and 5C depict side (apex), ABS and plan views of the transducer 250 after step 154 has been performed. Thus, the first nonmagnetic layer 262 has been provided on the underlayer 252. The nonmagnetic layer 264 has been deposited on the first nonmagnetic layer 262. A portion of the first nonmagnetic layer 262 forms at least part of the first sublayer discussed above. A portion of the second nonmagnetic layer 264 forms the second sublayer. Thus, the first nonmagnetic layer 262 may be silicon oxide while the second nonmagnetic layer 264 may be aluminum oxide. Other materials may be used, but the first and second nonmagnetic layer are desired to be removable using different processes for at least some etches. For example, a particular wet etch that would remove the second nonmagnetic layer 264 would not remove the first nonmagnetic layer 252. However, other etches may remove both layers 262 and 264. Both nonmagnetic layers 252 and 254 may be desired to be relatively easily patternable. The total thickness of the nonmagnetic layers 252 and 254 may be at least that desired for the main pole. For example, in some embodiments, the first nonmagnetic layer 262 is at least eight hundred Angstroms thick and not more than one thousand Angstroms thick. The second nonmagnetic layer 264 is at least two thousand Angstroms thick and not more than two thousand four hundred Angstroms thick in some embodiments. Also shown is underlayer 252. The underlayer 252 may include two sublayers. Underlayer 252A may be a NiFe layer used as a leading shield, while underlayer 252B may be a Ru layer. However, in other embodiments, other configurations, including other material(s) may be used. Together, the layers 262 and 264 form layer 260.


A mask that exposes a part of the second nonmagnetic layer 265 is provided, via step 156. Step 156 may include providing a hard mask layer, such as Cr on the second nonmagnetic layer 264. A photoresist mask that covers a portion of the transducer 250 in which the shields are to be formed is provided. FIGS. 6A, 6B and 6C depict side, ABS and plan views of the transducer 250 after these portions of step 156 have been performed. Thus, a hard mask layer 270 and photoresist mask 272 are shown. The hard mask layer may then be etched through as part of step 156. FIGS. 7A, 7B and 7C depict side, ABS and plan views of the transducer 250 after these portions of step 156 have been performed. Thus, hard mask 270′ is shown.


The exposed portions of the first nonmagnetic layer 262 and the second nonmagnetic layer 264 may then be removed, via step 158. Step 158 may be performed using a reactive ion etch (RIE) that is capable of removing both layers 262 and 264. Although some etches (such as a wet etch) may remove only one of the layers 262 or 264, in some embodiments, other etches may remove both. An RIE may be desirable because such an etch may be highly anisotropic, resulting in vertical sidewalls. FIGS. 8A, 8B and 8C depict side, ABS and plan views of the transducer 250 after step 158 has been performed. Thus, the nonmagnetic layers 262′ and 264′ as well as hard mask 270′ remain. The mask 272 has been removed. In the embodiment shown in FIGS. 8A-8C, an RIE has been used in step 158 resulting in vertical sidewalls for the first nonmagnetic layer 262′ and for the second nonmagnetic layer 264′.


A refill step is performed, via step 160. Step 160 includes full film depositing a third nonmagnetic layer for the intermediate layer. The third nonmagnetic layer may be insulating. In some embodiments, the third nonmagnetic layer is the same material as the first nonmagnetic layer 262′. Thus, step 160 may include full film depositing a silicon oxide layer. FIGS. 9A, 9B and 9C depict side, ABS and plan views of the transducer 250 after step 160 has been performed. Thus, the third nonmagnetic layer 266 is shown.


A planarization is then performed, via step 162. The planarization of step 162 may be a chemical mechanical planarization (CMP). Thus, the top of the third nonmagnetic layer 266 is desired to be substantially coplanar with the top of the second nonmagnetic layer 264′. In addition, an ion mill or analogous removal step may be performed to remove the hard mask 270′. FIGS. 10A, 10B and 10C depict side, ABS and plan views of the transducer 250 after step 162 has been performed. Thus, the third nonmagnetic layer 266′ has been planarized. Because nonmagnetic layers 262′ and 266′ may be formed of the same material, they may be considered to form a first sublayer of the intermediate layer. The remaining portion of the second nonmagnetic layer 264′ may form a second sublayer of the intermediate layer 260. Thus, steps 152-162 may be considered to be analogous to step 102.


A mask is provided on the intermediate layer 260, via step 164. The mask includes an aperture that corresponds to a trench to be formed in the intermediate layer 260. Step 164 may be performed using a photoresist line. For example, a first hard mask layer, such as Ta, may be full film deposited. A photoresist mask having a line corresponding to the region of the pole near the ABS is then fabricated on the first hard mask layer. A second hard mask layer, such as Cr, is provided on the first hard mask layer and the photoresist mask. The photoresist is then removed. This may be accomplished by side milling the photoresist mask to remove the second hard mask layer, then performing a lift off. FIGS. 11A, 11B and 11C depict side, ABS and plan views of the transducer 250 after step 164 has been performed. Thus, a first hard mask layer 273 and a second hard mask layer 274 having an aperture 276 therein are shown. The first and second hard mask layers form hard mask 275.


A trench is formed in intermediate layer 260, via step 166. Step 166 may include performing an aluminum oxide RIE (or other RIE(s) appropriate for the layers 262′ and 264′). In some embodiments, multiple RIEs are used to obtain the desired trench profile for various regions of the transducer 250. FIGS. 12A, 12B, 12C and 12D depict side, ABS, recessed and plan views of the transducer 250 after step 166 has been performed. Thus, a trench 280 has been formed in layers 262″, 264″ and 266′. As can be seen in FIGS. 12B and 12C, the sidewall angles of the trench may vary with distance from the ABS. In some embodiments, α2 is greater than α1. For example, α2 may be at least three and not more than fifteen degrees. In some such embodiments, α2 may be at least six and not more than nine degrees. In contrast, α1 may be less than or equal to three degrees. In addition, note that the trench 280 reaches the underlayer 252 in some regions. However, near the ABS, a portion of the layers 262″ and 264″ remain.


Seed layer(s) that are resistant to an etch of the intermediate layer 260 is deposited in the trench, via step 168. In some embodiments, this seed layer may serve as at least part of the gap. The seed layer may include material(s) such as Ru deposited using methods such as chemical vapor deposition. In other embodiments, a magnetic seed layer may be used in lieu of or in addition to a nonmagnetic seed layer. FIGS. 13A, 13B, 13C and 13D depict side, ABS, recessed and plan views of the transducer 250 after step 168 has been performed. Thus, seed layer 282 is shown.


The main pole may then be provided, via step 170. Step 170 includes depositing high saturation magnetization magnetic material(s), for example via electroplating. In some embodiments, the pole provided in step 170 fills the trench 280. However, in other embodiments, the pole may occupy only a portion of the trench. FIGS. 14A, 14B, 14C and 14D depict side, ABS, recessed and plan views of the transducer 250 after a portion of step 170 has been performed. In particular, the pole material(s) 290 have been provided. A planarization, such as a chemical mechanical planarization (CMP) may also be performed. A leading bevel may be naturally formed in the magnetic pole in step 170 due to the shape of the trench 280 and the deposition techniques used. A trailing bevel may also be provided in step 170. For example, a portion of the main pole may be covered by a mask after the planarization. Another portion of the main pole at and near the ABS may be removed, for example via an ion mill. FIGS. 15A, 15B, 15C and 15D depict side, ABS, recessed and plan views of the transducer 250 after step 170 has been completed. Thus, the portion of the main pole materials outside of the trench has been removed, forming main pole 290′. In the embodiment shown, no trailing (top) bevel has been formed. However, in alternate embodiments, such a trailing bevel may be formed before or after formation of the half shields.


A mask used in forming the side shield is provided, via step 172. FIGS. 16A, 16B, 16C and 16D depict side, ABS, recessed and plan views of the transducer 250 after step 172 has been performed. Thus, a mask 296 has been formed.


At least a portion of the second sublayer 264″ outside of the trench 280 and inside of the shield regions is removed, via step 174. Step 174 may include performing an aluminum oxide wet etch. FIGS. 17A, 17B, 17C and 17D depict side, ABS, recessed and plan views of the transducer 250 after step 174 has been performed. Thus, the second sublayer 264″ has been removed, leaving the first sublayer (first nonmagnetic layer 262″ and third nonmagnetic layer 266″).


The half shield(s) may be provided, via step 176. Step 176 includes depositing the material(s) for the half shield. For example, a magnetic material such as NiFe may be electroplated in step 176. In some embodiments, the half shield are part of a wraparound shield. Thus, step 176 may also include providing a wraparound shield. In addition, a write gap layer may also be provided. The magnetic material(s), such as NiFe, for the shield may thus be plated or otherwise deposited. FIGS. 18A, 18B, 18C and 18D depict side, ABS, recessed and plan views of the transducer 250 after step 176 has been performed. Thus, the shield 300 is shown. As can be seen in FIGS. 18B and 18C, the shield 300 includes half shield portions, which terminate on the top of the first layer 262″. Also shown is gap layer 292 that may be nonmagnetic. Thus, the shield 300 extends from above the top of the main pole 290′ to a region between the top and the bottom of the main pole 290′. The proximity of the bottom of the shield 300 to the bottom of the pole 290′ may depend upon design considerations. In some embodiments, a wraparound shield is not desired. In such embodiments, step 176 includes removing a trailing portion of the shield. FIGS. 19A, 19B, 19C and 19D depict side, ABS, recessed and plan views of the transducer 250 after step 170 has been performed in such an embodiment. Thus, the shield 300′ is a half side shield only.


Using the method 150, the transducer 250 including shield 300 or 300′ may be provided. Thus, the benefits of shingle recording may be achieved. For example, higher areal density recording may be performed by a head having larger critical dimensions.

Claims
  • 1. A method for fabricating magnetic transducer having air-bearing surface (ABS) location comprising: providing an intermediate including a first sublayer and a second sublayer in at least a side shield region, the first sublayer having a first sublayer top, the second sublayer residing on the first sublayer top in the shield region;forming a trench in the intermediate layer using at least one etch;providing a main pole in the trench, the main pole having a bottom and a top wider than the bottom, the first sublayer top being between the top and the bottom of the main pole;removing at least a portion of the second sublayer in the shield region; andproviding at least one half side shield, a bottom of the at least one half side shield being between the top and the bottom of the main pole.
  • 2. The method of claim 1 wherein the first sublayer includes a first portion in the side shield region and a second portion outside of the side shield region and wherein the second sublayer resides on the first portion of the first sublayer in the side shield region, the second portion of the first sublayer being thicker than the first portion of the first sublayer such that the first sublayer top of the second portion is aligned with a second sublayer top.
  • 3. The method of claim 2 wherein the step of providing the intermediate layer further includes: full-film depositing a first nonmagnetic layer;full-film depositing a second nonmagnetic layer on the first nonmagnetic layer;removing a portion of the first nonmagnetic layer and a portion of the second nonmagnetic layer outside of the side shield region, a remaining portion of the first nonmagnetic layer corresponding to the first portion of the first sublayer, a remaining portion of the second nonmagnetic layer corresponding to the second sublayer;refilling a region outside of the side shield region with a third nonmagnetic layer; andplanarizing at least the third nonmagnetic layer, a remaining portion of the third nonmagnetic layer forming the second portion of the first sublayer.
  • 4. The method of claim 3 wherein the first nonmagnetic layer and the third nonmagnetic layer include silicon oxide and the second nonmagnetic layer includes aluminum oxide.
  • 5. The method of claim 1 wherein the at least one etch removes a portion of the first sublayer and an additional portion of the second sublayer.
  • 6. The method of claim 1 wherein the step of providing the main pole further includes: depositing a seed layer, a portion of the seed layer residing in the trench;depositing at least one magnetic pole material; andplanarizing the at least one magnetic pole material.
  • 7. The method of claim 6 wherein step of removing the at least the portion of the second sublayer further includes: wet etching the second sublayer using an etchant, the seed layer being resistant to the etchant.
  • 8. The method of claim 6 wherein a portion of the seed layer forms at least a portion of a side gap between the main pole and the at least one half side shield.
  • 9. The method of claim 1 further comprising: providing a write gap on the main pole; andproviding a trailing shield.
  • 10. The method of claim 1 wherein the step of providing the at least one half side shield further includes: forming a wraparound shield including the at least one half side shield anda trialing shield.
  • 11. A method for fabricating magnetic transducer having air-bearing surface (ABS) location comprising: full-film depositing a first nonmagnetic layer, the first nonmagnetic layer consisting of silicon oxide;full-film depositing a second nonmagnetic layer on the first nonmagnetic layer, the second nonmagnetic layer consisting of aluminum oxide;providing a mask on the second nonmagnetic layer, the mask covering at least a shield region;removing a portion of the first nonmagnetic layer and a portion of the second nonmagnetic layer outside of the side shield region, a remaining portion of the first nonmagnetic layer corresponding to a first portion of a first sublayer of an intermediate layer, a remaining portion of the second nonmagnetic layer corresponding to a second sublayer of the intermediate layer;refilling a region outside of the side shield region with a third nonmagnetic layer, the third nonmagnetic layer consisting of silicon oxide;planarizing at least the third nonmagnetic layer, a remaining portion of the third nonmagnetic layer forming a second portion of the first sublayer, the second portion of the first sublayer being thicker than the first portion of the first sublayer such that the first sublayer top of the second portion is aligned with a second sublayer top of the second sublayer, the first sublayer and the second sublayer forming the intermediate layer;forming a trench in the intermediate layer using at least one etch, the trench having a location and a profile corresponding to at least a portion of a main pole;depositing a seed layer, a portion of the seed layer residing in the trench;depositing at least one magnetic pole material;planarizing the at least one magnetic pole material for the main pole;wet etching at least a portion of the second sublayer using an etchant, the seed layer being resistant to the etchant, the etchant removing the at least the portion of the second sublayer in the shield region; andproviding at least one half side shield, a bottom of the at least one half side shield being between the top and the bottom of the main pole, the bottom of the at least one half side shield residing on top of the first sublayer.
  • 12. A magnetic recording transducer having air-bearing surface (ABS) location and an intermediate layer comprising: an intermediate layer having a first sublayer;main pole having a bottom and a top wider than the bottom, the main pole having a pole tip region and a yoke region, the bottom of the main pole in the pole tip region forming a leading bevel, the second sublayer of the intermediate layer residing under the leading bevel;a nonmagnetic side gap;at least one half side shield, a bottom of the at least one half side shield being between the top and the bottom of the main pole, the nonmagnetic side gap being between the main pole and the at least one half side shield.
  • 13. The magnetic recording transducer of claim 12 wherein the bottom of the main pole is on a top of a portion of the first sublayer.
  • 14. The magnetic recording transducer of claim 12 further comprising: a write gap; anda trailing shield, the write gap being between the top of the main pole andat least a portion of the trailing shield.
  • 15. The magnetic recording transducer of claim 14 wherein the trailing shield is magnetically coupled with the at least one half side shield such that the trailing shield and the at least one half side shield form a wraparound shield.
  • 16. The magnetic transducer of claim 12 wherein the main pole has a plurality of sidewalls forming an angle with a down track direction, the angle being at least three degrees and not more than fifteen degrees at the ABS.
  • 17. The magnetic transducer claim 16 wherein the angle is at least six degrees and not more than nine degrees.
  • 18. The magnetic transducer of claim 16 wherein the angle decreases with distance from the ABS.
CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority to provisional U.S. Patent Application Ser. No. 61/946,564, filed on Feb. 28, 2014, which is hereby incorporated by reference in its entirety.

US Referenced Citations (717)
Number Name Date Kind
5801910 Mallary Sep 1998 A
6016290 Chen et al. Jan 2000 A
6018441 Wu et al. Jan 2000 A
6025978 Hoshi et al. Feb 2000 A
6025988 Yan Feb 2000 A
6032353 Hiner et al. Mar 2000 A
6033532 Minami Mar 2000 A
6034851 Zarouri et al. Mar 2000 A
6043959 Crue et al. Mar 2000 A
6046885 Aimonetti et al. Apr 2000 A
6049650 Jerman et al. Apr 2000 A
6055138 Shi Apr 2000 A
6058094 Davis et al. May 2000 A
6073338 Liu et al. Jun 2000 A
6078479 Nepela et al. Jun 2000 A
6081499 Berger et al. Jun 2000 A
6094803 Carlson et al. Aug 2000 A
6099362 Viches et al. Aug 2000 A
6103073 Thayamballi Aug 2000 A
6108166 Lederman Aug 2000 A
6118629 Huai et al. Sep 2000 A
6118638 Knapp et al. Sep 2000 A
6125018 Takagishi et al. Sep 2000 A
6130779 Carlson et al. Oct 2000 A
6134089 Barr et al. Oct 2000 A
6136166 Shen et al. Oct 2000 A
6137661 Shi et al. Oct 2000 A
6137662 Huai et al. Oct 2000 A
6160684 Heist et al. Dec 2000 A
6163426 Nepela et al. Dec 2000 A
6166891 Lederman et al. Dec 2000 A
6172848 Santini Jan 2001 B1
6173486 Hsiao et al. Jan 2001 B1
6175476 Huai et al. Jan 2001 B1
6178066 Barr Jan 2001 B1
6178070 Hong et al. Jan 2001 B1
6178150 Davis Jan 2001 B1
6181485 He Jan 2001 B1
6181525 Carlson Jan 2001 B1
6185051 Chen et al. Feb 2001 B1
6185077 Tong et al. Feb 2001 B1
6185081 Simion et al. Feb 2001 B1
6188549 Wiitala Feb 2001 B1
6190764 Shi et al. Feb 2001 B1
6193584 Rudy et al. Feb 2001 B1
6195229 Shen et al. Feb 2001 B1
6198608 Hong et al. Mar 2001 B1
6198609 Barr et al. Mar 2001 B1
6201673 Rottmayer et al. Mar 2001 B1
6204998 Katz Mar 2001 B1
6204999 Crue et al. Mar 2001 B1
6212153 Chen et al. Apr 2001 B1
6215625 Carlson Apr 2001 B1
6219205 Yuan et al. Apr 2001 B1
6221218 Shi et al. Apr 2001 B1
6222707 Huai et al. Apr 2001 B1
6229782 Wang et al. May 2001 B1
6230959 Heist et al. May 2001 B1
6233116 Chen et al. May 2001 B1
6233125 Knapp et al. May 2001 B1
6237215 Hunsaker et al. May 2001 B1
6252743 Bozorgi Jun 2001 B1
6255721 Roberts Jul 2001 B1
6258468 Mahvan et al. Jul 2001 B1
6266216 Hikami et al. Jul 2001 B1
6271604 Frank, Jr. et al. Aug 2001 B1
6275354 Huai et al. Aug 2001 B1
6277505 Shi et al. Aug 2001 B1
6282056 Feng et al. Aug 2001 B1
6296955 Hossain et al. Oct 2001 B1
6297955 Frank, Jr. et al. Oct 2001 B1
6304414 Crue, Jr. et al. Oct 2001 B1
6307715 Berding et al. Oct 2001 B1
6310746 Hawwa et al. Oct 2001 B1
6310750 Hawwa et al. Oct 2001 B1
6317290 Wang et al. Nov 2001 B1
6317297 Tong et al. Nov 2001 B1
6322911 Fukagawa et al. Nov 2001 B1
6330136 Wang et al. Dec 2001 B1
6330137 Knapp et al. Dec 2001 B1
6333830 Rose et al. Dec 2001 B2
6340533 Ueno et al. Jan 2002 B1
6349014 Crue, Jr. et al. Feb 2002 B1
6351355 Min et al. Feb 2002 B1
6353318 Sin et al. Mar 2002 B1
6353511 Shi et al. Mar 2002 B1
6356412 Levi et al. Mar 2002 B1
6359779 Frank, Jr. et al. Mar 2002 B1
6369983 Hong Apr 2002 B1
6376964 Young et al. Apr 2002 B1
6377535 Chen et al. Apr 2002 B1
6381095 Sin et al. Apr 2002 B1
6381105 Huai et al. Apr 2002 B1
6389499 Frank, Jr. et al. May 2002 B1
6392850 Tong et al. May 2002 B1
6396660 Jensen et al. May 2002 B1
6399179 Hanrahan et al. Jun 2002 B1
6400526 Crue, Jr. et al. Jun 2002 B2
6404600 Hawwa et al. Jun 2002 B1
6404601 Rottmayer et al. Jun 2002 B1
6404706 Stovall et al. Jun 2002 B1
6410170 Chen et al. Jun 2002 B1
6411522 Frank, Jr. et al. Jun 2002 B1
6417998 Crue, Jr. et al. Jul 2002 B1
6417999 Knapp et al. Jul 2002 B1
6418000 Gibbons et al. Jul 2002 B1
6418048 Sin et al. Jul 2002 B1
6421211 Hawwa et al. Jul 2002 B1
6421212 Gibbons et al. Jul 2002 B1
6424505 Lam et al. Jul 2002 B1
6424507 Lederman et al. Jul 2002 B1
6430009 Komaki et al. Aug 2002 B1
6430806 Chen et al. Aug 2002 B1
6433965 Gopinathan et al. Aug 2002 B1
6433968 Shi et al. Aug 2002 B1
6433970 Knapp et al. Aug 2002 B1
6437945 Hawwa et al. Aug 2002 B1
6445536 Rudy et al. Sep 2002 B1
6445542 Levi et al. Sep 2002 B1
6445553 Barr et al. Sep 2002 B2
6445554 Dong et al. Sep 2002 B1
6447935 Zhang et al. Sep 2002 B1
6448765 Chen et al. Sep 2002 B1
6451514 Iitsuka Sep 2002 B1
6452742 Crue et al. Sep 2002 B1
6452765 Mahvan et al. Sep 2002 B1
6456465 Louis et al. Sep 2002 B1
6459552 Liu et al. Oct 2002 B1
6462920 Karimi Oct 2002 B1
6466401 Hong et al. Oct 2002 B1
6466402 Crue, Jr. et al. Oct 2002 B1
6466404 Crue, Jr. et al. Oct 2002 B1
6468436 Shi et al. Oct 2002 B1
6469877 Knapp et al. Oct 2002 B1
6477019 Matono et al. Nov 2002 B2
6479096 Shi et al. Nov 2002 B1
6483662 Thomas et al. Nov 2002 B1
6487040 Hsiao et al. Nov 2002 B1
6487056 Gibbons et al. Nov 2002 B1
6490125 Barr Dec 2002 B1
6496330 Crue, Jr. et al. Dec 2002 B1
6496334 Pang et al. Dec 2002 B1
6504675 Shukh et al. Jan 2003 B1
6504676 Hiner et al. Jan 2003 B1
6512657 Heist et al. Jan 2003 B2
6512659 Hawwa et al. Jan 2003 B1
6512661 Louis Jan 2003 B1
6512690 Qi et al. Jan 2003 B1
6515573 Dong et al. Feb 2003 B1
6515791 Hawwa et al. Feb 2003 B1
6532823 Knapp et al. Mar 2003 B1
6535363 Hosomi et al. Mar 2003 B1
6552874 Chen et al. Apr 2003 B1
6552928 Qi et al. Apr 2003 B1
6577470 Rumpler Jun 2003 B1
6583961 Levi et al. Jun 2003 B2
6583968 Scura et al. Jun 2003 B1
6597548 Yamanaka et al. Jul 2003 B1
6611398 Rumpler et al. Aug 2003 B1
6618223 Chen et al. Sep 2003 B1
6629357 Akoh Oct 2003 B1
6633464 Lai et al. Oct 2003 B2
6636394 Fukagawa et al. Oct 2003 B1
6639291 Sin et al. Oct 2003 B1
6650503 Chen et al. Nov 2003 B1
6650506 Risse Nov 2003 B1
6654195 Frank, Jr. et al. Nov 2003 B1
6657816 Barr et al. Dec 2003 B1
6661621 Iitsuka Dec 2003 B1
6661625 Sin et al. Dec 2003 B1
6674610 Thomas et al. Jan 2004 B1
6680863 Shi et al. Jan 2004 B1
6683763 Hiner et al. Jan 2004 B1
6687098 Huai Feb 2004 B1
6687178 Qi et al. Feb 2004 B1
6687977 Knapp et al. Feb 2004 B2
6691226 Frank, Jr. et al. Feb 2004 B1
6697294 Qi et al. Feb 2004 B1
6700738 Sin et al. Mar 2004 B1
6700759 Knapp et al. Mar 2004 B1
6704158 Hawwa et al. Mar 2004 B2
6707083 Hiner et al. Mar 2004 B1
6710973 Okada et al. Mar 2004 B2
6713801 Sin et al. Mar 2004 B1
6721138 Chen et al. Apr 2004 B1
6721149 Shi et al. Apr 2004 B1
6721203 Qi et al. Apr 2004 B1
6722018 Santini Apr 2004 B2
6724569 Chen et al. Apr 2004 B1
6724572 Stoev et al. Apr 2004 B1
6729015 Matono et al. May 2004 B2
6731460 Sasaki May 2004 B2
6735850 Gibbons et al. May 2004 B1
6737281 Dang et al. May 2004 B1
6738223 Sato et al. May 2004 B2
6744608 Sin et al. Jun 2004 B1
6747301 Hiner et al. Jun 2004 B1
6751055 Alfoqaha et al. Jun 2004 B1
6754049 Seagle et al. Jun 2004 B1
6756071 Shi et al. Jun 2004 B1
6757140 Hawwa Jun 2004 B1
6760196 Niu et al. Jul 2004 B1
6762910 Knapp et al. Jul 2004 B1
6762911 Sasaki et al. Jul 2004 B2
6765756 Hong et al. Jul 2004 B1
6775902 Huai et al. Aug 2004 B1
6778358 Jiang et al. Aug 2004 B1
6781927 Heanuc et al. Aug 2004 B1
6785955 Chen et al. Sep 2004 B1
6791793 Chen et al. Sep 2004 B1
6791807 Hikami et al. Sep 2004 B1
6798616 Seagle et al. Sep 2004 B1
6798625 Ueno et al. Sep 2004 B1
6801408 Chen et al. Oct 2004 B1
6801411 Lederman et al. Oct 2004 B1
6803615 Sin et al. Oct 2004 B1
6806035 Atireklapvarodom et al. Oct 2004 B1
6807030 Hawwa et al. Oct 2004 B1
6807332 Hawwa Oct 2004 B1
6809899 Chen et al. Oct 2004 B1
6813116 Nakamura et al. Nov 2004 B2
6816345 Knapp et al. Nov 2004 B1
6828897 Nepela Dec 2004 B1
6829160 Qi et al. Dec 2004 B1
6829819 Crue, Jr. et al. Dec 2004 B1
6833979 Knapp et al. Dec 2004 B1
6834010 Qi et al. Dec 2004 B1
6857181 Lo et al. Feb 2005 B2
6859343 Alfoqaha et al. Feb 2005 B1
6859997 Tong et al. Mar 2005 B1
6861937 Feng et al. Mar 2005 B1
6870712 Chen et al. Mar 2005 B2
6873494 Chen et al. Mar 2005 B2
6873547 Shi et al. Mar 2005 B1
6879464 Sun et al. Apr 2005 B2
6888184 Shi et al. May 2005 B1
6888704 Diao et al. May 2005 B1
6891697 Nakamura et al. May 2005 B2
6891702 Tang May 2005 B1
6894871 Alfoqaha et al. May 2005 B2
6894877 Crue, Jr. et al. May 2005 B1
6903900 Sato et al. Jun 2005 B2
6906894 Chen et al. Jun 2005 B2
6909578 Missell et al. Jun 2005 B1
6912106 Chen et al. Jun 2005 B1
6934113 Chen Aug 2005 B1
6934129 Zhang et al. Aug 2005 B1
6940688 Jiang et al. Sep 2005 B2
6942824 Li Sep 2005 B1
6943993 Chang et al. Sep 2005 B2
6944938 Crue, Jr. et al. Sep 2005 B1
6947255 Hsiao et al. Sep 2005 B2
6947258 Li Sep 2005 B1
6950266 McCaslin et al. Sep 2005 B1
6950277 Nguy et al. Sep 2005 B1
6952325 Sato et al. Oct 2005 B2
6954332 Hong et al. Oct 2005 B1
6958885 Chen et al. Oct 2005 B1
6961221 Niu et al. Nov 2005 B1
6969989 Mei Nov 2005 B1
6975486 Chen et al. Dec 2005 B2
6987643 Seagle Jan 2006 B1
6989962 Dong et al. Jan 2006 B1
6989972 Stoev et al. Jan 2006 B1
6995949 Nakamura et al. Feb 2006 B2
7006326 Okada et al. Feb 2006 B2
7006327 Krounbi et al. Feb 2006 B2
7007372 Chen et al. Mar 2006 B1
7012832 Sin et al. Mar 2006 B1
7023658 Knapp et al. Apr 2006 B1
7026063 Ueno et al. Apr 2006 B2
7027268 Zhu et al. Apr 2006 B1
7027274 Sin et al. Apr 2006 B1
7035046 Young et al. Apr 2006 B1
7041985 Wang et al. May 2006 B1
7046490 Ueno et al. May 2006 B1
7054113 Seagle et al. May 2006 B1
7057857 Niu et al. Jun 2006 B1
7059868 Yan Jun 2006 B1
7070698 Le Jul 2006 B2
7092195 Liu et al. Aug 2006 B1
7100266 Plumer et al. Sep 2006 B2
7110289 Sin et al. Sep 2006 B1
7111382 Knapp et al. Sep 2006 B1
7113366 Wang et al. Sep 2006 B1
7114241 Kubota et al. Oct 2006 B2
7116517 He et al. Oct 2006 B1
7124654 Davies et al. Oct 2006 B1
7126788 Liu et al. Oct 2006 B1
7126790 Liu et al. Oct 2006 B1
7131346 Buttar et al. Nov 2006 B1
7133252 Takano et al. Nov 2006 B2
7133253 Seagle et al. Nov 2006 B1
7134185 Knapp et al. Nov 2006 B1
7139153 Hsiao et al. Nov 2006 B2
7154715 Yamanaka et al. Dec 2006 B2
7159302 Feldbaum et al. Jan 2007 B2
7170725 Zhou et al. Jan 2007 B1
7177117 Jiang et al. Feb 2007 B1
7185415 Khera et al. Mar 2007 B2
7193815 Stoev et al. Mar 2007 B1
7196880 Anderson et al. Mar 2007 B1
7199974 Alfoqaha Apr 2007 B1
7199975 Pan Apr 2007 B1
7206166 Notsuke et al. Apr 2007 B2
7211339 Seagle et al. May 2007 B1
7212379 Hsu et al. May 2007 B2
7212384 Stoev et al. May 2007 B1
7238292 He et al. Jul 2007 B1
7239478 Sin et al. Jul 2007 B1
7245454 Aoki et al. Jul 2007 B2
7248431 Liu et al. Jul 2007 B1
7248433 Stoev et al. Jul 2007 B1
7248449 Seagle Jul 2007 B1
7251878 Le et al. Aug 2007 B2
7253992 Chen et al. Aug 2007 B2
7280325 Pan Oct 2007 B1
7283327 Liu et al. Oct 2007 B1
7284316 Huai et al. Oct 2007 B1
7286329 Chen et al. Oct 2007 B1
7289303 Sin et al. Oct 2007 B1
7292409 Stoev et al. Nov 2007 B1
7296338 Le et al. Nov 2007 B2
7296339 Yang et al. Nov 2007 B1
7307814 Seagle et al. Dec 2007 B1
7307818 Park et al. Dec 2007 B1
7310204 Stoev et al. Dec 2007 B1
7318947 Park et al. Jan 2008 B1
7324304 Benakli et al. Jan 2008 B1
7333295 Medina et al. Feb 2008 B1
7337530 Stoev et al. Mar 2008 B1
7342752 Zhang et al. Mar 2008 B1
7349170 Rudman et al. Mar 2008 B1
7349179 He et al. Mar 2008 B1
7354664 Jiang et al. Apr 2008 B1
7363697 Dunn et al. Apr 2008 B1
7369359 Fujita et al. May 2008 B2
7371152 Newman May 2008 B1
7372665 Stoev et al. May 2008 B1
7375926 Stoev et al. May 2008 B1
7379269 Krounbi et al. May 2008 B1
7386933 Krounbi et al. Jun 2008 B1
7389577 Shang et al. Jun 2008 B1
7392577 Yazawa et al. Jul 2008 B2
7417832 Erickson et al. Aug 2008 B1
7419891 Chen et al. Sep 2008 B1
7428124 Song et al. Sep 2008 B1
7430095 Benakli et al. Sep 2008 B2
7430098 Song et al. Sep 2008 B1
7436620 Kang et al. Oct 2008 B1
7436638 Pan Oct 2008 B1
7440220 Kang et al. Oct 2008 B1
7441325 Gao et al. Oct 2008 B2
7443632 Stoev et al. Oct 2008 B1
7444740 Chung et al. Nov 2008 B1
7464457 Le et al. Dec 2008 B2
7469467 Gao et al. Dec 2008 B2
7493688 Wang et al. Feb 2009 B1
7508627 Zhang et al. Mar 2009 B1
7508628 Che et al. Mar 2009 B2
7522377 Jiang et al. Apr 2009 B1
7522379 Krounbi et al. Apr 2009 B1
7522382 Pan Apr 2009 B1
7535675 Kimura et al. May 2009 B2
7542246 Song et al. Jun 2009 B1
7551406 Thomas et al. Jun 2009 B1
7552523 He et al. Jun 2009 B1
7554767 Hu et al. Jun 2009 B1
7558019 Le et al. Jul 2009 B2
7580222 Sasaki et al. Aug 2009 B2
7583466 Kermiche et al. Sep 2009 B2
7595967 Moon et al. Sep 2009 B1
7639451 Yatsu et al. Dec 2009 B2
7639452 Mochizuki et al. Dec 2009 B2
7639457 Chen et al. Dec 2009 B1
7643246 Yazawa et al. Jan 2010 B2
7660080 Liu et al. Feb 2010 B1
7663839 Sasaki et al. Feb 2010 B2
7672079 Li et al. Mar 2010 B2
7672080 Tang et al. Mar 2010 B1
7672086 Jiang Mar 2010 B1
7684160 Erickson et al. Mar 2010 B1
7688546 Bai et al. Mar 2010 B1
7691434 Zhang et al. Apr 2010 B1
7695761 Shen et al. Apr 2010 B1
7719795 Hu et al. May 2010 B2
7726009 Liu et al. Jun 2010 B1
7729086 Song et al. Jun 2010 B1
7729087 Stoev et al. Jun 2010 B1
7736823 Wang et al. Jun 2010 B1
7748104 Bonhote et al. Jul 2010 B2
7764469 Ho et al. Jul 2010 B2
7785666 Sun et al. Aug 2010 B1
7796356 Fowler et al. Sep 2010 B1
7796360 Im et al. Sep 2010 B2
7796361 Sasaki et al. Sep 2010 B2
7800858 Bajikar et al. Sep 2010 B1
7819979 Chen et al. Oct 2010 B1
7829264 Wang et al. Nov 2010 B1
7841068 Chen et al. Nov 2010 B2
7846643 Sun et al. Dec 2010 B1
7855854 Hu et al. Dec 2010 B2
7859791 Toma et al. Dec 2010 B2
7869160 Pan et al. Jan 2011 B1
7872824 Macchioni et al. Jan 2011 B1
7872833 Hu et al. Jan 2011 B2
7881019 Hsiao et al. Feb 2011 B2
7898773 Han et al. Mar 2011 B2
7910267 Zeng et al. Mar 2011 B1
7911735 Sin et al. Mar 2011 B1
7911737 Jiang et al. Mar 2011 B1
7916425 Sasaki et al. Mar 2011 B2
7916426 Hu et al. Mar 2011 B2
7918013 Dunn et al. Apr 2011 B1
7921544 Sasaki et al. Apr 2011 B2
7924528 Sasaki et al. Apr 2011 B2
7968219 Jiang et al. Jun 2011 B1
7982989 Shi et al. Jul 2011 B1
8008912 Shang Aug 2011 B1
8012804 Wang et al. Sep 2011 B1
8015692 Zhang et al. Sep 2011 B1
8018677 Chung et al. Sep 2011 B1
8018678 Zhang et al. Sep 2011 B1
8024748 Moravec et al. Sep 2011 B1
8027125 Lee et al. Sep 2011 B2
8054586 Balamane et al. Nov 2011 B2
8066892 Guthrie et al. Nov 2011 B2
8072705 Wang et al. Dec 2011 B1
8074345 Anguelouch et al. Dec 2011 B1
8077418 Hu et al. Dec 2011 B1
8077434 Shen et al. Dec 2011 B1
8077435 Liu et al. Dec 2011 B1
8077557 Hu et al. Dec 2011 B1
8079135 Shen et al. Dec 2011 B1
8081403 Chen et al. Dec 2011 B1
8091210 Sasaki et al. Jan 2012 B1
8097846 Anguelouch et al. Jan 2012 B1
8104166 Zhang et al. Jan 2012 B1
8116033 Kameda et al. Feb 2012 B2
8116043 Leng et al. Feb 2012 B2
8116171 Lee Feb 2012 B1
8117738 Han et al. Feb 2012 B2
8125732 Bai et al. Feb 2012 B2
8125856 Li et al. Feb 2012 B1
8134794 Wang Mar 2012 B1
8136224 Sun et al. Mar 2012 B1
8136225 Zhang et al. Mar 2012 B1
8136805 Lee Mar 2012 B1
8141235 Zhang Mar 2012 B1
8146236 Luo et al. Apr 2012 B1
8149536 Yang et al. Apr 2012 B1
8151441 Rudy et al. Apr 2012 B1
8163185 Sun et al. Apr 2012 B1
8164760 Willis Apr 2012 B2
8164855 Gibbons et al. Apr 2012 B1
8164864 Kaiser et al. Apr 2012 B2
8165709 Rudy Apr 2012 B1
8166631 Tran et al. May 2012 B1
8166632 Zhang et al. May 2012 B1
8169473 Yu et al. May 2012 B1
8169741 Taguchi et al. May 2012 B2
8171618 Wang et al. May 2012 B1
8179636 Bai et al. May 2012 B1
8184399 Wu et al. May 2012 B2
8191237 Luo et al. Jun 2012 B1
8194365 Leng et al. Jun 2012 B1
8194366 Li et al. Jun 2012 B1
8196285 Zhang et al. Jun 2012 B1
8200054 Li et al. Jun 2012 B1
8203800 Li et al. Jun 2012 B2
8208350 Hu et al. Jun 2012 B1
8220140 Wang et al. Jul 2012 B1
8222599 Chien Jul 2012 B1
8225488 Zhang et al. Jul 2012 B1
8227023 Liu et al. Jul 2012 B1
8228633 Tran et al. Jul 2012 B1
8231796 Li et al. Jul 2012 B1
8233233 Shen et al. Jul 2012 B1
8233234 Hsiao et al. Jul 2012 B2
8233235 Chen et al. Jul 2012 B2
8233248 Li et al. Jul 2012 B1
8248728 Yamaguchi et al. Aug 2012 B2
8248896 Yuan et al. Aug 2012 B1
8254060 Shi et al. Aug 2012 B1
8257597 Guan et al. Sep 2012 B1
8259410 Bai et al. Sep 2012 B1
8259539 Hu et al. Sep 2012 B1
8262918 Li et al. Sep 2012 B1
8262919 Luo et al. Sep 2012 B1
8264792 Bai et al. Sep 2012 B2
8264797 Emley Sep 2012 B2
8264798 Guan et al. Sep 2012 B1
8270109 Ohtsu Sep 2012 B2
8270126 Roy et al. Sep 2012 B1
8276258 Tran et al. Oct 2012 B1
8277669 Chen et al. Oct 2012 B1
8279719 Hu et al. Oct 2012 B1
8284517 Sun et al. Oct 2012 B1
8288204 Wang et al. Oct 2012 B1
8289649 Sasaki et al. Oct 2012 B2
8289821 Huber Oct 2012 B1
8291743 Shi et al. Oct 2012 B1
8305711 Li et al. Nov 2012 B2
8307539 Rudy et al. Nov 2012 B1
8307540 Tran et al. Nov 2012 B1
8308921 Hiner et al. Nov 2012 B1
8310785 Zhang et al. Nov 2012 B1
8310901 Batra et al. Nov 2012 B1
8315019 Mao et al. Nov 2012 B1
8316527 Hong et al. Nov 2012 B2
8320076 Shen et al. Nov 2012 B1
8320077 Tang et al. Nov 2012 B1
8320219 Wolf et al. Nov 2012 B1
8320220 Yuan et al. Nov 2012 B1
8320722 Yuan et al. Nov 2012 B1
8322022 Yi et al. Dec 2012 B1
8322023 Zeng et al. Dec 2012 B1
8325569 Shi et al. Dec 2012 B1
8333008 Sin et al. Dec 2012 B1
8334093 Zhang et al. Dec 2012 B2
8336194 Yuan et al. Dec 2012 B2
8339738 Tran et al. Dec 2012 B1
8341826 Jiang et al. Jan 2013 B1
8343319 Li et al. Jan 2013 B1
8343364 Gao et al. Jan 2013 B1
8347488 Hong et al. Jan 2013 B2
8349195 Si et al. Jan 2013 B1
8351307 Wolf et al. Jan 2013 B1
8357244 Zhao et al. Jan 2013 B1
8373945 Luo et al. Feb 2013 B1
8375564 Luo et al. Feb 2013 B1
8375565 Hu et al. Feb 2013 B2
8381391 Park et al. Feb 2013 B2
8385157 Champion et al. Feb 2013 B1
8385158 Hu et al. Feb 2013 B1
8394280 Wan et al. Mar 2013 B1
8400731 Li et al. Mar 2013 B1
8404128 Zhang et al. Mar 2013 B1
8404129 Luo et al. Mar 2013 B1
8405930 Li et al. Mar 2013 B1
8409453 Jiang et al. Apr 2013 B1
8413317 Wan et al. Apr 2013 B1
8416540 Li et al. Apr 2013 B1
8419953 Su et al. Apr 2013 B1
8419954 Chen et al. Apr 2013 B1
8422176 Leng et al. Apr 2013 B1
8422342 Lee Apr 2013 B1
8422841 Shi et al. Apr 2013 B1
8424192 Yang et al. Apr 2013 B1
8441756 Sun et al. May 2013 B1
8443510 Shi et al. May 2013 B1
8444866 Guan et al. May 2013 B1
8449948 Medina et al. May 2013 B2
8451556 Wang et al. May 2013 B1
8451563 Zhang et al. May 2013 B1
8454846 Zhou et al. Jun 2013 B1
8455119 Jiang et al. Jun 2013 B1
8456961 Wang et al. Jun 2013 B1
8456963 Hu et al. Jun 2013 B1
8456964 Yuan et al. Jun 2013 B1
8456966 Shi et al. Jun 2013 B1
8456967 Mallary Jun 2013 B1
8458892 Si et al. Jun 2013 B2
8462592 Wolf et al. Jun 2013 B1
8468682 Zhang Jun 2013 B1
8472288 Wolf et al. Jun 2013 B1
8477453 Takano et al. Jul 2013 B2
8480911 Osugi et al. Jul 2013 B1
8486285 Zhou et al. Jul 2013 B2
8486286 Gao et al. Jul 2013 B1
8488272 Tran et al. Jul 2013 B1
8491801 Tanner et al. Jul 2013 B1
8491802 Gao et al. Jul 2013 B1
8493687 Sasaki et al. Jul 2013 B2
8493693 Zheng et al. Jul 2013 B1
8493695 Kaiser et al. Jul 2013 B1
8495813 Hu et al. Jul 2013 B1
8498080 Sasaki et al. Jul 2013 B2
8498084 Leng et al. Jul 2013 B1
8506828 Osugi et al. Aug 2013 B1
8514517 Batra et al. Aug 2013 B1
8518279 Wang et al. Aug 2013 B1
8518832 Yang et al. Aug 2013 B1
8520336 Liu et al. Aug 2013 B1
8520337 Liu et al. Aug 2013 B1
8524068 Medina et al. Sep 2013 B2
8526275 Yuan et al. Sep 2013 B1
8531801 Xiao et al. Sep 2013 B1
8532450 Wang et al. Sep 2013 B1
8533937 Wang et al. Sep 2013 B1
8537494 Pan et al. Sep 2013 B1
8537495 Luo et al. Sep 2013 B1
8537502 Park et al. Sep 2013 B1
8545999 Leng et al. Oct 2013 B1
8547659 Bai et al. Oct 2013 B1
8547667 Roy et al. Oct 2013 B1
8547730 Shen et al. Oct 2013 B1
8555486 Medina et al. Oct 2013 B1
8559141 Pakala et al. Oct 2013 B1
8563146 Zhang et al. Oct 2013 B1
8565049 Tanner et al. Oct 2013 B1
8576517 Tran et al. Nov 2013 B1
8578594 Jiang et al. Nov 2013 B2
8582238 Liu et al. Nov 2013 B1
8582241 Yu et al. Nov 2013 B1
8582253 Zheng et al. Nov 2013 B1
8588039 Shi et al. Nov 2013 B1
8593914 Wang et al. Nov 2013 B2
8597528 Roy et al. Dec 2013 B1
8599520 Liu et al. Dec 2013 B1
8599657 Lee Dec 2013 B1
8603593 Roy et al. Dec 2013 B1
8607438 Gao et al. Dec 2013 B1
8607439 Wang et al. Dec 2013 B1
8611035 Bajikar et al. Dec 2013 B1
8611054 Shang et al. Dec 2013 B1
8611055 Pakala et al. Dec 2013 B1
8614864 Hong et al. Dec 2013 B1
8619512 Yuan et al. Dec 2013 B1
8625233 Ji et al. Jan 2014 B1
8625235 Takano et al. Jan 2014 B2
8625941 Shi et al. Jan 2014 B1
8628672 Si et al. Jan 2014 B1
8630068 Mauri et al. Jan 2014 B1
8634280 Wang et al. Jan 2014 B1
8638529 Leng et al. Jan 2014 B1
8643980 Fowler et al. Feb 2014 B1
8649123 Zhang et al. Feb 2014 B1
8665561 Knutson et al. Mar 2014 B1
8670211 Sun et al. Mar 2014 B1
8670213 Zeng et al. Mar 2014 B1
8670214 Knutson et al. Mar 2014 B1
8670294 Shi et al. Mar 2014 B1
8670295 Hu et al. Mar 2014 B1
8675318 Ho et al. Mar 2014 B1
8675455 Krichevsky et al. Mar 2014 B1
8681594 Shi et al. Mar 2014 B1
8689430 Chen et al. Apr 2014 B1
8693141 Elliott et al. Apr 2014 B1
8703397 Zeng et al. Apr 2014 B1
8705205 Li et al. Apr 2014 B1
8711518 Zeng et al. Apr 2014 B1
8711528 Xiao et al. Apr 2014 B1
8717709 Shi et al. May 2014 B1
8720044 Tran et al. May 2014 B1
8721902 Wang et al. May 2014 B1
8724259 Liu et al. May 2014 B1
8749790 Tanner et al. Jun 2014 B1
8749920 Knutson et al. Jun 2014 B1
8753903 Tanner et al. Jun 2014 B1
8760807 Zhang et al. Jun 2014 B1
8760818 Diao et al. Jun 2014 B1
8760819 Liu et al. Jun 2014 B1
8760822 Li et al. Jun 2014 B1
8760823 Chen et al. Jun 2014 B1
8763235 Wang et al. Jul 2014 B1
8780498 Jiang et al. Jul 2014 B1
8780505 Xiao Jul 2014 B1
8786983 Liu et al. Jul 2014 B1
8790524 Luo et al. Jul 2014 B1
8790527 Luo et al. Jul 2014 B1
8792208 Liu et al. Jul 2014 B1
8792312 Wang et al. Jul 2014 B1
8793866 Zhang et al. Aug 2014 B1
8797680 Luo et al. Aug 2014 B1
8797684 Tran et al. Aug 2014 B1
8797686 Bai et al. Aug 2014 B1
8797692 Guo et al. Aug 2014 B1
8813324 Emley et al. Aug 2014 B2
20030076630 Sato et al. Apr 2003 A1
20040061988 Matono et al. Apr 2004 A1
20040184191 Ichihara et al. Sep 2004 A1
20050117251 Matono et al. Jun 2005 A1
20050162778 Kimura et al. Jul 2005 A1
20060044677 Li et al. Mar 2006 A1
20060158779 Ota et al. Jul 2006 A1
20060174474 Le Aug 2006 A1
20060225268 Le et al. Oct 2006 A1
20060288565 Le et al. Dec 2006 A1
20070211380 Akimoto et al. Sep 2007 A1
20070236834 Toma et al. Oct 2007 A1
20070247746 Kim et al. Oct 2007 A1
20070258167 Allen et al. Nov 2007 A1
20070263324 Allen et al. Nov 2007 A1
20070283557 Chen et al. Dec 2007 A1
20080002309 Hsu et al. Jan 2008 A1
20080151437 Chen et al. Jun 2008 A1
20080232001 Bonhote et al. Sep 2008 A1
20080273276 Guan Nov 2008 A1
20080273277 Guan et al. Nov 2008 A1
20090091861 Takano et al. Apr 2009 A1
20090279206 Yang et al. Nov 2009 A1
20100112486 Zhang et al. May 2010 A1
20100146773 Li et al. Jun 2010 A1
20100165517 Araki et al. Jul 2010 A1
20100277832 Bai et al. Nov 2010 A1
20100290157 Zhang et al. Nov 2010 A1
20110051293 Bai et al. Mar 2011 A1
20110086240 Xiang et al. Apr 2011 A1
20110146060 Han et al. Jun 2011 A1
20110151279 Allen et al. Jun 2011 A1
20110205671 Benakli et al. Aug 2011 A1
20110222188 Etoh et al. Sep 2011 A1
20110273800 Takano et al. Nov 2011 A1
20120111826 Chen et al. May 2012 A1
20120162811 Ishibashi et al. Jun 2012 A1
20120216378 Emley et al. Aug 2012 A1
20120237878 Zeng et al. Sep 2012 A1
20120268845 Sahoo et al. Oct 2012 A1
20120298621 Gao Nov 2012 A1
20130216702 Kaiser et al. Aug 2013 A1
20130216863 Li et al. Aug 2013 A1
20130257421 Shang et al. Oct 2013 A1
20130286508 Takano et al. Oct 2013 A1
20140154529 Yang et al. Jun 2014 A1
20140175050 Zhang et al. Jun 2014 A1
20140252518 Zhang et al. Sep 2014 A1
Non-Patent Literature Citations (4)
Entry
Feng Liu, et al., U.S. Appl. No. 13/631,808, filed Sep. 28, 2012 ,17 pages.
Jinquiu Zhang, et. al., U.S. Appl. No. 14/280,342, filed May 16, 2014, 38 pages.
Jinquiu Zhang, et. al., U.S. Appl. No. 14/229,297, filed Mar. 28, 2014, 30 pages.
Mallary, et al., “One Terabit per Square Inch Perpendicular Recording Conceptual Design”, IEEE Transactions on Magnetics, vol. 38, No. 4, Jul. 2002, pp. 1719-1724.
Provisional Applications (1)
Number Date Country
61946564 Feb 2014 US