Method for fabricating a magnetic writer using multiple etches

Information

  • Patent Grant
  • 9280990
  • Patent Number
    9,280,990
  • Date Filed
    Friday, March 28, 2014
    10 years ago
  • Date Issued
    Tuesday, March 8, 2016
    8 years ago
Abstract
A method and system provide a magnetic transducer having an air-bearing surface (ABS) location. The method includes forming a trench in the intermediate layer using a plurality of etches. A first etch substantially provides a first portion of the trench having a first sidewall angle. The second etch substantially provides a second portion of the trench having a second sidewall angle. The second sidewall angle is greater than the first sidewall angle. The second portion of the trench includes the ABS location. The method also includes providing a main pole in the trench. The main pole has a plurality of sidewalls. The sidewalls having the first sidewall angle in the first portion of the trench and the second sidewall angle in the second portion of the trench.
Description
BACKGROUND


FIGS. 1A and 1B depict air-bearing surface (ABS) and yoke views of a conventional magnetic recording head 10. The magnetic recording transducer 10 may be a perpendicular magnetic recording (PMR) head. The conventional magnetic recording transducer 10 may be a part of a merged head including the write transducer 10 and a read transducer (not shown). Alternatively, the magnetic recording head may be a write head including only the write transducer 10. The conventional transducer 10 includes an underlayer 12, side gap 14, side shields 16, top gap 17, optional top shield 18 and main pole 20.


The main pole 20 resides on an underlayer 12 and includes sidewalls 22 and 24. The sidewalls 22 and 24 of the conventional main pole 20 form an angle α0 with the down track direction at the ABS and an angle α1 with the down track direction at the distance x1 from the ABS. As can be seen in FIGS. 1A and 1B, portions of the main pole 20 recessed from the ABS in the stripe height direction are wider in the cross track direction than at the ABS. In addition, the angle between the sidewalls 22 and 24 and the down track direction increases. Thus, α1 is greater than α0. For example, if α0 is on the order of 13°, then α1 may be 25°.


The side shields 16 are separated from the main pole 20 by a side gap 14. The side shields 16 extend a distance back from the ABS. The gap 14 between the side shields 16 and the main pole 20 may have a substantially constant thickness. Thus, the side shields 16 are conformal with the main pole 20.


Although the conventional magnetic recording head 10 functions, there are drawbacks. In particular, the conventional magnetic recording head 10 may not perform sufficiently at higher recording densities. For example, the write field of the conventional main pole 20 may not have a sufficiently high magnitude write field without introducing adjacent track interference (ATI) issues. Accordingly, what is needed is a system and method for improving the performance of a magnetic recording head.





BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS


FIGS. 1A-1B depict ABS and yoke views of a conventional magnetic recording head.



FIG. 2 depicts a flow chart of an exemplary embodiment of a method for providing a magnetic recording transducer.



FIGS. 3A and 3B depict ABS and yoke views of an exemplary embodiment of a magnetic recording transducer during fabrication.



FIGS. 4A and 4B depict ABS and yoke views of an exemplary embodiment of a magnetic recording transducer during fabrication.



FIGS. 5A, 5B and 5C depict ABS, yoke and side views of an exemplary embodiment of a magnetic recording disk drive during fabrication.



FIG. 6 depicts a flow chart of another exemplary embodiment of a method for providing a magnetic recording transducer.



FIG. 7 depicts a flow chart of an exemplary embodiment of a method for providing a magnetic recording transducer.



FIGS. 8A-8C through 10A, 10B, 10C and 10D depict various views of an exemplary embodiment of a magnetic recording transducer fabricated using the method.



FIGS. 11 through 16A, 16B, 16C and 16D depict various views of an exemplary embodiment of a magnetic recording transducer fabricated using the method.





DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS


FIG. 2 depicts an exemplary embodiment of a method 100 for providing a magnetic recording transducer. For simplicity, some steps may be omitted, interleaved, and/or combined. FIGS. 3A and 3B through 5A, 5B and 5C depict various views of a transducer 200 during fabrication using the method 100. For clarity, FIGS. 3A-5C are not to scale. For simplicity not all portions of the disk drive and transducer 200 are shown. In addition, although the disk drive and transducer 200 are depicted in the context of particular components other and/or different components may be used. For example, circuitry used to drive and control various portions of the disk drive is not shown. For simplicity, only single components are shown. However, multiples of each component and/or their sub-components, might be used. The disk drive 100 may be a perpendicular magnetic recording (PMR) disk drive. However, in other embodiments, the disk drive 100 may be configured for other types of magnetic recording included but not limited to heat assisted magnetic recording (HAMR).


Referring to FIGS. 2-5C, the method 100 is described in the context of providing a magnetic recording disk drive and transducer 200. However, the method 100 may be used to fabricate multiple magnetic recording transducers at substantially the same time. The method 100 may also be used to fabricate other magnetic recording transducers. The method 100 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 100 also may start after formation of other portions of the magnetic recording head. For example, the method 100 may start after a read transducer, return pole/shield and/or other structure have been fabricated.


A trench is formed in an intermediate layer using multiple etches, via step 102. The trench is formed such that the trench has different sidewall angles in different portions of the pole. For example, the sidewall angles at and near the ABS may be larger (further from perpendicular to the surface of the intermediate layer) than the sidewall angles in regions recessed from the ABS (termed the yoke herein). Step 102 includes using multiple etches in order to form various sidewall angles. A first etch may provide a first portion of the trench having a first sidewall angle, while a second etch may provide a second portion of the trench having a second sidewall angle. For example, a first etch may be performed on the portion of the intermediate layer corresponding to the yoke, while the second etch may be performed on the portion of the intermediate layer corresponding to the pole tip, including ABS location. In some embodiments, the pole tip is masked during the first etch and the yoke region covered by a mask during the second etch. In other embodiments, the yoke region may be uncovered during the second etch. In some such embodiments, the second etch of the pole tip region may also etch the yoke region. In other such embodiments, the second etch of the pole tip region is configured to leave the yoke region substantially unchanged. For example, the intermediate layer in the yoke region may be made of a different material than the intermediate layer in the pole tip region. This different material may not be removed by the etch chemistry used to form the trench in the pole tip region. In other embodiments, the pole tip region of the trench may be formed by the first etch, while the yoke region of the trench is formed by second etch.



FIGS. 3A-3B and 4A-4B depict one embodiment of the transducer during step 102. FIGS. 3A and 3B depict ABS (pole tip) and recessed views of the transducer after the first etch is performed. An underlayer 202 and intermediate layer 204 are shown. The underlayer 202 may include a bottom (or leading edge) shield. The intermediate layer 204 may include one or more layers. The layers may be vertical and/or may be into the plane of the page. For example, the intermediate layer 204 in the recessed view may be formed of different material(s) than in the ABS view. A mask 206 having an aperture corresponding to the trench has been formed on the intermediate layer. This mask 206 and its aperture are in both the ABS and recessed regions. In addition, a mask 210 covers the intermediate layer in the pole tip region, including at the ABS. Because the mask 210 is not present in the recessed region, a portion of the intermediate layer has been removed by the etch, forming trench 208. FIGS. 4A-4B depict the transducer 200 after a second etch has been performed. The mask 210 is removed prior to the second etch. Thus, a trench 208′ in the intermediate layer 204′ has been formed. Because the second etch is completed, more of the intermediate layer 204′ has been removed. In some embodiments, the intermediate layer 204′ has been removed by the second etch in both the pole tip and yoke regions. In other embodiments, additional portions of the intermediate layer 204′ have been removed only in the pole tip region. The trench 208′ extends into the ABS and has a location that corresponds to the aperture in the mask 206. As can be seen in FIGS. 4A-4B, the geometry of the trench changes. For example, the trench 208′ is wider in the recessed view than in the ABS view. In addition, the sidewall angles, α2 and α1, differ. In some embodiments, α2 is at least twelve degrees and not more than sixteen degrees. The sidewall angle is larger at the ABS than recessed from the ABS. Although α1 is shown as nonzero, in some embodiments, the sidewall angle for the trench 208′ is zero degrees (substantially vertical sidewalls) in some portion of the trench. For example, α1 may be at least zero degrees and not more than five degrees. In some such embodiments, α1 is not more than three degrees. Thus, the sidewall angles may decrease to zero as the distance from the ABS increases. In some embodiments, the sidewall angle goes to zero at least fifteen nanometers and not more than thirty nanometers from the ABS. However, in other embodiments, the sidewall angle may reach zero degrees at a different distance from the ABS. For example, the sidewall angle may go to zero degrees up to two hundred nanometers from the ABS.


The main pole is provided in the trench 208′, via step 104. In some embodiments, step 104 includes depositing a seed layer, such as Ru and/or magnetic seed layer(s). High saturation magnetization magnetic material(s) are also provided. For example, such magnetic materials may be plated and/or vacuum deposited. FIGS. 5A, 5B and 5C depicted ABS, recessed and side views of the transducer 200 after step 104 has been performed. The pole 210 is thus shown. For simplicity, any seed layers are not shown. Also shown in FIG. 5C are coil(s) 220, slider 230 and media 240. Although not shown, the slider 220 and thus the transducer 200 are generally attached to a suspension. In general, the disk drive includes the write transducer 200 and a read transducer (not shown). However, for clarity, only the write transducer 200 is shown. The coil(s) 220 are used to energize the main pole 210. Two turns are depicted in FIG. 5C. Another number of turns may, however, be used. Note that only a portion of the coil(s) 210 may be shown in FIG. 5C. If, for example, the coil(s) 220 is a spiral, or pancake, coil, then additional portions of the coil(s) 220 may be located further from the ABS. Further, additional coils may also be used.


The pole 210 has sidewall angles that decrease with increasing distance from the ABS. Thus, the sidewall angles of the pole 210 are less in the recessed view than in the ABS view. FIGS. 5A and 5B depict the pole 210 as being conformal with the trench 208′. In some embodiments, however, at least a portion of the pole 210 is not conformal with the sides of the trench. In some embodiments, the pole 210 may have leading and/or trailing surface bevels, as shown in FIG. 5C.


Using the method 100, a magnetic transducer 200 having improved performance may be fabricated. For example, the sidewall angles of the pole may vary because of the manner in which the trench is formed. This may be achieved while exposing the ABS to only a single etch in forming the trench. In addition, a nonconformal side gap might be provided. This may also improve performance of the transducer 200. These benefits may be achieved without significantly complicating processing. Thus, performance of the disk drive may be improved.



FIG. 6 depicts an exemplary embodiment of a method 110 for providing a magnetic recording transducer. For simplicity, some steps may be omitted, interleaved, and/or combined. The method 110 is described in the context of providing a magnetic recording disk drive and transducer 200 depicted in FIGS. 3A-5C. However, the method 110 may be used to fabricate multiple magnetic recording heads at substantially the same time. The method 110 may also be used to fabricate other magnetic recording transducers. The method 110 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 110 also may start after formation of other portions of the magnetic recording head. For example, the method 110 may start after a read transducer, return pole/shield and/or other structure have been fabricated.


Referring to FIGS. 3A-6, the intermediate layer 204 is provided in steps 112-116. A first layer is deposited, via step 112. The first layer deposited may be a full film (or blanket) deposition of aluminum oxide, silicon oxide, or some other reactive ion etchable material. If the intermediate layer is to be a single material, then steps 114 and 116 may be skipped. If, however, multiple layers are to be provided in a direction perpendicular to the ABS, then steps 114 and 116 may be performed. A portion of the first layer may be removed, via step 114. In some embodiments, the portion of the first layer removed includes the region in which the pole tip and side shield(s) are to be formed. Step 114 may be performed by providing a mask on the first layer having an aperture in the region desired to be removed and etching the first layer while the mask is in place. A second layer may then be provided, via step 116. Step 116 may include full film depositing the second layer and performing a planarization such as a chemical mechanical planarization (CMP). Thus, the intermediate layer includes different materials in different regions. In some embodiments, steps 114 and 116 may be repeated for other areas. In other embodiments, steps 114 and 116 may be achieved by depositing the first layer in step 112 in the presence of a mask. Steps 114 and 116 may be performed by lifting off the mask and depositing the second layer.


A first etch of the intermediate layer 208 is performed, via step 118. Thus, a portion of the trench is formed. This portion of the trench has a particular sidewall angle. Step 118 may be performed in the presence of one or more masks. If one mask is present, then the mask may expose only the portion of the intermediate layer to be removed in step 118. Alternatively, the aperture may expose regions of the intermediate layer that are not to be removed in step 118 if multiple materials are present and the etch chemistry used in step 118 only removes the desired material(s). Multiple masks may also be used. One mask may have a first aperture under which the entire trench is to be formed. Another mask may expose a portion of the first aperture and cover another portion of the first aperture. Thus, only a portion of the trench may be formed.


A second etch of the intermediate layer 208 is performed, via step 120. A second portion of the intermediate layer is removed and a second portion of the trench formed in step 120. Step 120 may be performed in an analogous manner to step 118. Thus, a trench 208′ having varying sidewall angles may be provided.


The method 110 may be used to perform step 102 of the method 100 depicted in FIG. 2. Consequently, the method 110 may be used in fabricating a transducer 200 with the benefits described above. For example, the sidewall angles of the pole may vary because of the manner in which the trench is formed. This may be achieved while exposing the ABS to only a single etch in forming the trench. In addition, a nonconformal side gap might be provided. This may also improve performance of the transducer 200. These benefits may be achieved without significantly complicating processing. Thus, performance of the disk drive may be improved.



FIG. 7 depicts an exemplary embodiment of a method 150 for providing a pole for a magnetic recording transducer having a main pole having varying a gradient in the side gap width. For simplicity, some steps may be omitted, interleaved, and/or combined. The method 150 is also described in the context of providing a magnetic recording transducer 250 depicted in FIGS. 8A-8C through FIGS. 10A-10D depict an exemplary embodiment of a transducer 250 during fabrication using the method 150. The method 150 may be used to fabricate multiple magnetic recording heads at substantially the same time. The method 150 may also be used to fabricate other magnetic recording transducers. The method 150 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 150 also may start after formation of other portions of the magnetic recording transducer. For example, the method 150 may start after a read transducer, return pole/shield and/or other structure have been fabricated.


The first material(s) for the intermediate layer are provided, via step 152. This step may include full film depositing aluminum oxide, silicon oxide or another layer on an underlayer. A first portion of the first material(s) may optionally be removed, via step 154. Thus, an aperture may be formed in the first material(s). A second set of material(s) is optionally provided in the aperture formed in the first material(s), via step 156. Thus, an intermediate layer having multiple constituents may be formed in steps 152-156. For example, materials that are etchable using different etch chemistries may be used in steps 152-156. The material(s) may have the same or different etch characteristics for a particular etch chemistry. Thus, an intermediate layer in which the etching may be tailored is provided in steps 152-156.


At least one mask that exposes a portion of the intermediate layer is provided, via step 158. A first etch is performed, via step 160. For example, a reactive ion etch (RIE) appropriate for the portion of the intermediate layer to be removed may be performed in step 160. FIGS. 8A, 8B and 8C depict ABS, recessed and plan views of one embodiment of a transducer 250 after step 160 has been performed. Thus, an underlayer 252 and intermediate layer 254 have been formed. In this embodiment, steps 154 and 156 have been omitted. The intermediate layer 254 may thus be a single layer of, for example, aluminum oxide or silicon oxide. The underlayer 252 may be a single layers or multiple layers. For example, in some embodiments, the portion of the underlayer 252 at and/or near the ABS is a leading shield. Also shown are masks 256 and 260. The mask 256 include an aperture 258 over both the pole tip region at/near the ABS and a recessed region. The second mask 260 covers the portion of the intermediate layer 254 around the ABS location. The ABS location is the surface that will form the ABS of the transducer 250. A trench 262 has been formed by step 160. Because of the presence of the mask 260, the trench 262 is only in the region recessed from the ABS. Thus, the trench 262 corresponds to the location and geometry desired form the pole in the yoke and paddle regions.


The mask 260 is removed, via step 162. Thus, an additional portion of the intermediate layer 254 is exposed in the aperture 258. An additional etch is performed, via step 164. If the intermediate layer 254 is a single layer, the same etch chemistry may be used for the RIE in step 164 as for step 160. In the embodiment shown in FIGS. 8A-10D, the etch chemistry may be suitable to remove aluminum oxide. The same etch chemistry may thus be used for steps 160 and 164 or different etch chemistries which both remove aluminum oxide may be used in steps 160 and 164. However in other embodiments, in which the intermediate layer includes different constituents, different etch chemistries may be used in steps 160 and 164. FIGS. 9A, 9B and 9C depict ABS, recessed and plan views of the transducer 250 after step 164 is performed. Thus, trench 262 has been formed in both the ABS/pole tip and recessed/yoke and paddle regions. The sidewall angle, α1, in the recessed view may be less than the sidewall angle, α2, at the ABS. in some embodiments, α1 is at least zero degrees and not more than five degrees. In some such embodiments, α1 is not more than three degrees. In contrast α2 is at least twelve degrees and not more than sixteen degrees.


A seed layer that is resistant to an etch of the intermediate layer 254 is deposited in the trench, via step 166. In some embodiments, this seed layer may serve as at least part of the gap. The seed layer may include material(s) such as Ru. In other embodiments, a magnetic seed layer may be used in lieu of or in addition to a nonmagnetic seed layer.


The main pole may then be provided, via step 168. Step 168 includes depositing high saturation magnetization magnetic material(s), for example via electroplating. In some embodiments, the pole provided in step 168 fills the trench 262. However, in other embodiments, the pole may occupy only a portion of the trench. For example, a mask such as a photoresist may be provided. The mask has an aperture that exposes only a portion of the trench 262. In some embodiments, all of the pole tip/ABS region is exposed, but only a portion of the yoke and paddle regions are exposed. The magnetic material(s) for the main pole may then be plated and the mask removed. A planarization, such as a chemical mechanical planarization (CMP) may also be performed. A leading bevel may be naturally formed in the magnetic pole in step 168 due to the shape of the trench 262 and the deposition techniques used. A trailing bevel may also be provided in step 168. For example, a portion of the main pole may be covered by a mask after the planarization. Another portion of the main pole at and near the ABS may be removed, for example via an ion mill. The portion of the trench 262 between the main pole and the seed layer(s) provided in step 166 may be optionally refilled with a nonmagnetic material, such as aluminum oxide, via step 170. In embodiments in which a side shield is provided, the refill and seed layers provided in step 166 may be used to form a side gap that is conformal in some regions and nonconformal in other regions. FIGS. 10A, 10B, 10C and 10D depict ABS, recessed, plan and yoke/paddle views, respectively, of the transducer. Thus, the main pole 270 is shown. In addition, a seed layer 265 and refill 266 have been provided. At and near the ABS, shown in FIGS. 10A, 10B and 10C, the pole 270 fills the trench. However, further from the ABS, the refill 266 occupies a region between the edges of the trench/seed layer 264 and the pole 270. Near the ABS, as shown in FIGS. 10A and 10B, the seed layer 264 may form the side gap. Thus, the side gap may be conformal in these region. Further from the ABS, for example as shown in FIG. 10D, the seed layer 264 and refill 266 form the side gap. In these regions, the side gap may be nonconformal with the pole/trench.


The portion of the intermediate layer outside of the trench 262 may optionally be removed, via step 172. The side shield(s) may be provided, via step 174. Step 174 may also include providing a wraparound shield. The magnetic material(s) may thus be plated or otherwise deposited.


Using the method 150, the pole 270 may be provided. The sidewall angles of the pole 270 may vary because of the manner in which the trench is formed and/or because the pole may be deposited with another mask in place. This may be achieved while exposing the ABS to only a single etch in forming the trench. In addition, a nonconformal side gap might be provided. This may also improve performance of the transducer 250. These benefits may be achieved without significantly complicating processing. Thus, performance of the disk drive may be improved.



FIGS. 11-16D depict another embodiment of a transducer 250′ fabricated using the method 150. In this embodiment, however, steps 154 and 156 are not skipped. FIG. 11 depicts a side view of the transducer 250′ after step 152 is performed. Thus, as shown in FIG. 11, a first intermediate layer 254′ is provided on an underlayer 252′. In the embodiment shown, the underlayer 252′ includes a first underlayer 252A that may be NiFe and a second underlayer 252B that may be Ru.



FIGS. 12A and 12B depict side and plan views of the transducer 250′ after step 156 has been performed. Thus, a portion of the first intermediate layer 254A has been removed and replaced with a second intermediate layer 254B. The region in which the second intermediate layer 254B is formed includes the side shield area, as shown in FIG. 12B. In the embodiment shown, the region in which the second intermediate layer 254B is shown has a footprint that substantially matches that of the side shield to be formed. However, the second intermediate layer 254B may have a footprint with a different shape. In some embodiments the first intermediate layer 254A is silicon oxide, while the second intermediate layer is aluminum oxide or NiFe. Note that in alternate embodiments, the second intermediate layer could be full film deposited first, a portion removed and the region occupied by this portion refilled with the first intermediate layer.



FIGS. 13A, 13B, 13C and 13D depict ABS, recessed, plan and side views of the transducer 250′ after step 160 has been performed. Thus, the mask 256′ having aperture 258′ has been formed. Mask 260′ that covers the region near the ABS is also shown. A trench 262 has also been provided in the first intermediate layer 254A.



FIGS. 14A, 14B, 14C and 14D depict ABS, recessed, plan and side views of the transducer 250′ after step 164 has been performed. Thus, the trench 262′ has been formed in both intermediate layers 254A and 254B. Also note that in FIG. 14D that the second intermediate layer 254B has a surface that slopes in the direction perpendicular to the ABS such that the trench 262′ has a varying height and width.



FIGS. 15A, 15B, 15C, 15D and 15E depict ABS, recessed, plan, side and yoke views of the transducer 250′ after step 170 has been performed. Consequently, seed layer 264′, pole 270′ and refill 266′ have been provided. As can be seen in FIGS. 15A, 15B and 15D, the pole 270′ has a leading bevel.



FIGS. 16A, 16B, 16C and 16D depict ABS, recessed, plan, side and yoke views of the transducer 250′ after step 174 has been performed. Thus, side shields 274 and trailing shield 276 have been formed. Also shown is gap layer 272. The side shields 274 and trailing shield 276 together form a wraparound shield. As can be seen in FIG. 16C, the shields occupy substantially the same footprint as did the second intermediate layer 254B. The seed layer 264′ forms the side gap in FIGS. 16A and 16B, but layers 264′ and 266′ form the gap for the further from the ABS location.


Using the method 150, the magnetic transducers 250 and/or 250′ may be provided. The sidewall angles of the pole 270′ may vary because of the manner in which the trench is formed and/or because the pole may be deposited with another mask in place. This may be achieved while exposing the ABS to only a single etch in forming the trench. In addition, a nonconformal side gap might be provided. This may also improve performance of the transducer 250′. These benefits may be achieved without significantly complicating processing. Thus, performance of the disk drive may be improved.

Claims
  • 1. A method for fabricating magnetic transducer having air-bearing surface (ABS) location and an intermediate layer comprising: forming a trench in the intermediate layer using a plurality of etches, the trench having a plurality of trench sidewalls and a trench bottom, a first etch substantially providing a first portion of the trench having a first trench sidewall angle between the trench bottom and at least one of the plurality of trench sidewalls and the second etch substantially providing a second portion of the trench having a second trench sidewall angle between the trench bottom and the at least one of the plurality of trench sidewalls, the second trench sidewall angle being greater than the first trench sidewall angle, the second portion of the trench including the ABS location, the first portion of the trench being recessed from the ABS such that the second portion is between the first portion and the ABS location;providing a main pole in the trench, the main pole having a plurality of sidewalls and a main pole bottom, the plurality of sidewalls having a first sidewall angle between the main pole bottom and at least one of the plurality of sidewalls in the first portion of the trench and a second sidewall angle between the main pole bottom and the at least one of the plurality of sidewalls in the second portion of the trench, the first sidewall angle being greater than the second sidewall angle.
  • 2. The method of claim 1 wherein the first etch is performed before the second etch.
  • 3. The method of claim 1 wherein the second etch is performed before the first etch.
  • 4. The method of claim 1 wherein the step of providing the trench further includes: providing a mask covering a portion of the intermediate layer including the ABS location;removing a first portion of the intermediate layer corresponding to the first portion of the trench using a first etch of the plurality of etches;removing the mask; andremoving at least a second portion of the intermediate layer corresponding to the second portion of the trench using a second etch of the plurality of etches.
  • 5. The method of claim 4 wherein the step of removing the first portion of the intermediate layer is performed before the step of removing the at least the second portion of the intermediate layer.
  • 6. The method of claim 5 wherein the intermediate layer includes a first material and a second material, the method further comprising: providing the first material in at least a first region corresponding to the first portion of the trench; andproviding the second material in at least a second region corresponding to the second portion of the trench.
  • 7. The method of claim 6 wherein the step of providing the first material further includes blanket depositing the first material and wherein the step of providing the second material further includes: removing the first material in the at least the second region; anddepositing the second material in at least the second region.
  • 8. The method of claim 7 wherein the first material includes silicon oxide and the second material includes at least one of aluminum oxide and NiFe.
  • 9. The method of claim 8 wherein the at least the second region includes a side shield region.
  • 10. The method of claim 1 wherein the second sidewall angle is at least twelve degrees and not more than sixteen degrees and wherein the first sidewall angle is at least zero degrees and not more than five degrees.
  • 11. The method of claim 10 wherein the first sidewall angle is not more than three degrees.
  • 12. The method of claim 1 further comprising: providing a side gap adjacent to a portion of the main pole; andproviding a side shield, the side gap residing between the side shield and the main pole.
  • 13. The method of claim 12 wherein the step of providing the side gap further includes: providing a conformal portion of the side gap such that a first portion of the main pole is conformal with the trench; andproviding a nonconformal portion of the side gap such that a second portion of the main pole is nonconformal with the trench.
  • 14. A method for fabricating magnetic transducer having air-bearing surface (ABS) location comprising: providing an intermediate layer;providing a mask on the intermediate layer, the mask exposing a first portion of the intermediate layer and covering a first region of the intermediate layer, the first region including the ABS location;performing a first etch to remove the first portion of the intermediate layer and form a first trench portion therein;removing the mask;performing a second etch after the step of removing the mask, the second etch removing at least a second portion of the intermediate layer and forming a trench therein, the second portion including the ABS location, the trench including the first trench portion and a second trench portion, the first trench portion having a first sidewall angle, the second trench portion having a second sidewall angle, the first sidewall angle being less than three degrees, the second sidewall angle being greater than the first sidewall angle and not more than fifteen degrees;providing a main pole in the trench, the main pole having a plurality of sidewalls, the plurality of sidewalls having the first sidewall angle in the first portion of the trench and the second sidewall angle in the second portion of the trench;providing a side gap adjacent to a portion of the main pole; andproviding a side shield, the side gap residing between the side shield and the main pole.
  • 15. The method of claim 14 wherein the intermediate layer includes a first material and a second material and wherein the step of providing the intermediate layer further includes: blanket depositing the first material, the first material including silicon oxide;removing the first material in a second region including the ABS location and a side shield region corresponding to the side shield; anddepositing the second material in the second region, the second material including at least one of aluminum oxide and NiFe.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to provisional U.S. Patent Application Ser. No. 61/914,884, filed on Dec. 11, 2013, which is hereby incorporated by reference in its entirety.

US Referenced Citations (712)
Number Name Date Kind
5801910 Mallary Sep 1998 A
6016290 Chen et al. Jan 2000 A
6018441 Wu et al. Jan 2000 A
6025978 Hoshi et al. Feb 2000 A
6025988 Yan Feb 2000 A
6032353 Hiner et al. Mar 2000 A
6033532 Minami Mar 2000 A
6034851 Zarouri et al. Mar 2000 A
6043959 Crue et al. Mar 2000 A
6046885 Aimonetti et al. Apr 2000 A
6049650 Jerman et al. Apr 2000 A
6055138 Shi Apr 2000 A
6058094 Davis et al. May 2000 A
6073338 Liu et al. Jun 2000 A
6078479 Nepela et al. Jun 2000 A
6081499 Berger et al. Jun 2000 A
6094803 Carlson et al. Aug 2000 A
6099362 Viches et al. Aug 2000 A
6103073 Thayamballi Aug 2000 A
6108166 Lederman Aug 2000 A
6118629 Huai et al. Sep 2000 A
6118638 Knapp et al. Sep 2000 A
6125018 Takagishi et al. Sep 2000 A
6130779 Carlson et al. Oct 2000 A
6134089 Barr et al. Oct 2000 A
6136166 Shen et al. Oct 2000 A
6137661 Shi et al. Oct 2000 A
6137662 Huai et al. Oct 2000 A
6160684 Heist et al. Dec 2000 A
6163426 Nepela et al. Dec 2000 A
6166891 Lederman et al. Dec 2000 A
6172848 Santini Jan 2001 B1
6173486 Hsiao et al. Jan 2001 B1
6175476 Huai et al. Jan 2001 B1
6178066 Barr Jan 2001 B1
6178070 Hong et al. Jan 2001 B1
6178150 Davis Jan 2001 B1
6181485 He Jan 2001 B1
6181525 Carlson Jan 2001 B1
6185051 Chen et al. Feb 2001 B1
6185077 Tong et al. Feb 2001 B1
6185081 Simion et al. Feb 2001 B1
6188549 Wiitala Feb 2001 B1
6190764 Shi et al. Feb 2001 B1
6193584 Rudy et al. Feb 2001 B1
6195229 Shen et al. Feb 2001 B1
6198608 Hong et al. Mar 2001 B1
6198609 Barr et al. Mar 2001 B1
6201673 Rottmayer et al. Mar 2001 B1
6204998 Katz Mar 2001 B1
6204999 Crue et al. Mar 2001 B1
6212153 Chen et al. Apr 2001 B1
6215625 Carlson Apr 2001 B1
6219205 Yuan et al. Apr 2001 B1
6221218 Shi et al. Apr 2001 B1
6222707 Huai et al. Apr 2001 B1
6229782 Wang et al. May 2001 B1
6230959 Heist et al. May 2001 B1
6233116 Chen et al. May 2001 B1
6233125 Knapp et al. May 2001 B1
6237215 Hunsaker et al. May 2001 B1
6252743 Bozorgi Jun 2001 B1
6255721 Roberts Jul 2001 B1
6258468 Mahvan et al. Jul 2001 B1
6266216 Hikami et al. Jul 2001 B1
6271604 Frank, Jr. et al. Aug 2001 B1
6275354 Huai et al. Aug 2001 B1
6277505 Shi et al. Aug 2001 B1
6282056 Feng et al. Aug 2001 B1
6296955 Hossain et al. Oct 2001 B1
6297955 Frank, Jr. et al. Oct 2001 B1
6304414 Crue, Jr. et al. Oct 2001 B1
6307715 Berding et al. Oct 2001 B1
6310746 Hawwa et al. Oct 2001 B1
6310750 Hawwa et al. Oct 2001 B1
6317290 Wang et al. Nov 2001 B1
6317297 Tong et al. Nov 2001 B1
6322911 Fukagawa et al. Nov 2001 B1
6330136 Wang et al. Dec 2001 B1
6330137 Knapp et al. Dec 2001 B1
6333830 Rose et al. Dec 2001 B2
6340533 Ueno et al. Jan 2002 B1
6349014 Crue, Jr. et al. Feb 2002 B1
6351355 Min et al. Feb 2002 B1
6353318 Sin et al. Mar 2002 B1
6353511 Shi et al. Mar 2002 B1
6356412 Levi et al. Mar 2002 B1
6359779 Frank, Jr. et al. Mar 2002 B1
6369983 Hong Apr 2002 B1
6376964 Young et al. Apr 2002 B1
6377535 Chen et al. Apr 2002 B1
6381095 Sin et al. Apr 2002 B1
6381105 Huai et al. Apr 2002 B1
6389499 Frank, Jr. et al. May 2002 B1
6392850 Tong et al. May 2002 B1
6396660 Jensen et al. May 2002 B1
6399179 Hanrahan et al. Jun 2002 B1
6400526 Crue, Jr. et al. Jun 2002 B2
6404600 Hawwa et al. Jun 2002 B1
6404601 Rottmayer et al. Jun 2002 B1
6404706 Stovall et al. Jun 2002 B1
6410170 Chen et al. Jun 2002 B1
6411522 Frank, Jr. et al. Jun 2002 B1
6417998 Crue, Jr. et al. Jul 2002 B1
6417999 Knapp et al. Jul 2002 B1
6418000 Gibbons et al. Jul 2002 B1
6418048 Sin et al. Jul 2002 B1
6421211 Hawwa et al. Jul 2002 B1
6421212 Gibbons et al. Jul 2002 B1
6424505 Lam et al. Jul 2002 B1
6424507 Lederman et al. Jul 2002 B1
6430009 Komaki et al. Aug 2002 B1
6430806 Chen et al. Aug 2002 B1
6433965 Gopinathan et al. Aug 2002 B1
6433968 Shi et al. Aug 2002 B1
6433970 Knapp et al. Aug 2002 B1
6437945 Hawwa et al. Aug 2002 B1
6445536 Rudy et al. Sep 2002 B1
6445542 Levi et al. Sep 2002 B1
6445553 Barr et al. Sep 2002 B2
6445554 Dong et al. Sep 2002 B1
6447935 Zhang et al. Sep 2002 B1
6448765 Chen et al. Sep 2002 B1
6451514 Iitsuka Sep 2002 B1
6452742 Crue et al. Sep 2002 B1
6452765 Mahvan et al. Sep 2002 B1
6456465 Louis et al. Sep 2002 B1
6459552 Liu et al. Oct 2002 B1
6462920 Karimi Oct 2002 B1
6466401 Hong et al. Oct 2002 B1
6466402 Crue, Jr. et al. Oct 2002 B1
6466404 Crue, Jr. et al. Oct 2002 B1
6468436 Shi et al. Oct 2002 B1
6469877 Knapp et al. Oct 2002 B1
6477019 Matono et al. Nov 2002 B2
6479096 Shi et al. Nov 2002 B1
6483662 Thomas et al. Nov 2002 B1
6487040 Hsiao et al. Nov 2002 B1
6487056 Gibbons et al. Nov 2002 B1
6490125 Barr Dec 2002 B1
6496330 Crue, Jr. et al. Dec 2002 B1
6496334 Pang et al. Dec 2002 B1
6504675 Skukh et al. Jan 2003 B1
6504676 Hiner et al. Jan 2003 B1
6512657 Heist et al. Jan 2003 B2
6512659 Hawwa et al. Jan 2003 B1
6512661 Louis Jan 2003 B1
6512690 Qi et al. Jan 2003 B1
6515573 Dong et al. Feb 2003 B1
6515791 Hawwa et al. Feb 2003 B1
6532823 Knapp et al. Mar 2003 B1
6535363 Hosomi et al. Mar 2003 B1
6552874 Chen et al. Apr 2003 B1
6552928 Qi et al. Apr 2003 B1
6577470 Rumpler Jun 2003 B1
6583961 Levi et al. Jun 2003 B2
6583968 Scura et al. Jun 2003 B1
6597548 Yamanaka et al. Jul 2003 B1
6611398 Rumpler et al. Aug 2003 B1
6618223 Chen et al. Sep 2003 B1
6629357 Akoh Oct 2003 B1
6633464 Lai et al. Oct 2003 B2
6636394 Fukagawa et al. Oct 2003 B1
6639291 Sin et al. Oct 2003 B1
6650503 Chen et al. Nov 2003 B1
6650506 Risse Nov 2003 B1
6654195 Frank, Jr. et al. Nov 2003 B1
6657816 Barr et al. Dec 2003 B1
6661621 Iitsuka Dec 2003 B1
6661625 Sin et al. Dec 2003 B1
6674610 Thomas et al. Jan 2004 B1
6680863 Shi et al. Jan 2004 B1
6683763 Hiner et al. Jan 2004 B1
6687098 Huai Feb 2004 B1
6687178 Qi et al. Feb 2004 B1
6687977 Knapp et al. Feb 2004 B2
6691226 Frank, Jr. et al. Feb 2004 B1
6697294 Qi et al. Feb 2004 B1
6700738 Sin et al. Mar 2004 B1
6700759 Knapp et al. Mar 2004 B1
6704158 Hawwa et al. Mar 2004 B2
6707083 Hiner et al. Mar 2004 B1
6710973 Okada et al. Mar 2004 B2
6713801 Sin et al. Mar 2004 B1
6721138 Chen et al. Apr 2004 B1
6721149 Shi et al. Apr 2004 B1
6721203 Qi et al. Apr 2004 B1
6722018 Santini Apr 2004 B2
6724569 Chen et al. Apr 2004 B1
6724572 Stoev et al. Apr 2004 B1
6729015 Matono et al. May 2004 B2
6731460 Sasaki May 2004 B2
6735850 Gibbons et al. May 2004 B1
6737281 Dang et al. May 2004 B1
6738223 Sato et al. May 2004 B2
6744608 Sin et al. Jun 2004 B1
6747301 Hiner et al. Jun 2004 B1
6751055 Alfoqaha et al. Jun 2004 B1
6754049 Seagle et al. Jun 2004 B1
6756071 Shi et al. Jun 2004 B1
6757140 Hawwa Jun 2004 B1
6760196 Niu et al. Jul 2004 B1
6762910 Knapp et al. Jul 2004 B1
6762911 Sasaki et al. Jul 2004 B2
6765756 Hong et al. Jul 2004 B1
6775902 Huai et al. Aug 2004 B1
6778358 Jiang et al. Aug 2004 B1
6781927 Heanuc et al. Aug 2004 B1
6785955 Chen et al. Sep 2004 B1
6791793 Chen et al. Sep 2004 B1
6791807 Hikami et al. Sep 2004 B1
6798616 Seagle et al. Sep 2004 B1
6798625 Ueno et al. Sep 2004 B1
6801408 Chen et al. Oct 2004 B1
6801411 Lederman et al. Oct 2004 B1
6803615 Sin et al. Oct 2004 B1
6806035 Atireklapvarodom et al. Oct 2004 B1
6807030 Hawwa et al. Oct 2004 B1
6807332 Hawwa Oct 2004 B1
6809899 Chen et al. Oct 2004 B1
6813116 Nakamura et al. Nov 2004 B2
6816345 Knapp et al. Nov 2004 B1
6828897 Nepela Dec 2004 B1
6829160 Qi et al. Dec 2004 B1
6829819 Crue, Jr. et al. Dec 2004 B1
6833979 Knapp et al. Dec 2004 B1
6834010 Qi et al. Dec 2004 B1
6857181 Lo et al. Feb 2005 B2
6859343 Alfoqaha et al. Feb 2005 B1
6859997 Tong et al. Mar 2005 B1
6861937 Feng et al. Mar 2005 B1
6870712 Chen et al. Mar 2005 B2
6873494 Chen et al. Mar 2005 B2
6873547 Shi et al. Mar 2005 B1
6879464 Sun et al. Apr 2005 B2
6888184 Shi et al. May 2005 B1
6888704 Diao et al. May 2005 B1
6891697 Nakamura et al. May 2005 B2
6891702 Tang May 2005 B1
6894871 Alfoqaha et al. May 2005 B2
6894877 Crue, Jr. et al. May 2005 B1
6903900 Sato et al. Jun 2005 B2
6906894 Chen et al. Jun 2005 B2
6909578 Missell et al. Jun 2005 B1
6912106 Chen et al. Jun 2005 B1
6934113 Chen Aug 2005 B1
6934129 Zhang et al. Aug 2005 B1
6940688 Jiang et al. Sep 2005 B2
6942824 Li Sep 2005 B1
6943993 Chang et al. Sep 2005 B2
6944938 Crue, Jr. et al. Sep 2005 B1
6947255 Hsiao et al. Sep 2005 B2
6947258 Li Sep 2005 B1
6950266 McCaslin et al. Sep 2005 B1
6950277 Nguy et al. Sep 2005 B1
6952325 Sato et al. Oct 2005 B2
6954332 Hong et al. Oct 2005 B1
6958885 Chen et al. Oct 2005 B1
6961221 Niu et al. Nov 2005 B1
6969989 Mei Nov 2005 B1
6975486 Chen et al. Dec 2005 B2
6987643 Seagle Jan 2006 B1
6989962 Dong et al. Jan 2006 B1
6989972 Stoev et al. Jan 2006 B1
6995949 Nakamura et al. Feb 2006 B2
7006326 Okada et al. Feb 2006 B2
7006327 Krounbi et al. Feb 2006 B2
7007372 Chen et al. Mar 2006 B1
7012832 Sin et al. Mar 2006 B1
7023658 Knapp et al. Apr 2006 B1
7026063 Ueno et al. Apr 2006 B2
7027268 Zhu et al. Apr 2006 B1
7027274 Sin et al. Apr 2006 B1
7035046 Young et al. Apr 2006 B1
7041985 Wang et al. May 2006 B1
7046490 Ueno et al. May 2006 B1
7054113 Seagle et al. May 2006 B1
7057857 Niu et al. Jun 2006 B1
7059868 Yan Jun 2006 B1
7070698 Le Jul 2006 B2
7092195 Liu et al. Aug 2006 B1
7100266 Plumer et al. Sep 2006 B2
7110289 Sin et al. Sep 2006 B1
7111382 Knapp et al. Sep 2006 B1
7113366 Wang et al. Sep 2006 B1
7114241 Kubota et al. Oct 2006 B2
7116517 He et al. Oct 2006 B1
7124654 Davies et al. Oct 2006 B1
7126788 Liu et al. Oct 2006 B1
7126790 Liu et al. Oct 2006 B1
7131346 Buttar et al. Nov 2006 B1
7133252 Takano et al. Nov 2006 B2
7133253 Seagle et al. Nov 2006 B1
7134185 Knapp et al. Nov 2006 B1
7139153 Hsiao et al. Nov 2006 B2
7154715 Yamanaka et al. Dec 2006 B2
7159302 Feldbaum et al. Jan 2007 B2
7170725 Zhou et al. Jan 2007 B1
7177117 Jiang et al. Feb 2007 B1
7185415 Khera et al. Mar 2007 B2
7193815 Stoev et al. Mar 2007 B1
7196880 Anderson et al. Mar 2007 B1
7199974 Alfoqaha Apr 2007 B1
7199975 Pan Apr 2007 B1
7206166 Notsuke et al. Apr 2007 B2
7211339 Seagle et al. May 2007 B1
7212379 Hsu et al. May 2007 B2
7212384 Stoev et al. May 2007 B1
7238292 He et al. Jul 2007 B1
7239478 Sin et al. Jul 2007 B1
7245454 Aoki et al. Jul 2007 B2
7248431 Liu et al. Jul 2007 B1
7248433 Stoev et al. Jul 2007 B1
7248449 Seagle Jul 2007 B1
7251878 Le et al. Aug 2007 B2
7253992 Chen et al. Aug 2007 B2
7280325 Pan Oct 2007 B1
7283327 Liu et al. Oct 2007 B1
7284316 Huai et al. Oct 2007 B1
7286329 Chen et al. Oct 2007 B1
7289303 Sin et al. Oct 2007 B1
7292409 Stoev et al. Nov 2007 B1
7296338 Le et al. Nov 2007 B2
7296339 Yang et al. Nov 2007 B1
7307814 Seagle et al. Dec 2007 B1
7307818 Park et al. Dec 2007 B1
7310204 Stoev et al. Dec 2007 B1
7318947 Park et al. Jan 2008 B1
7322096 Biskeborn et al. Jan 2008 B2
7324304 Benakli et al. Jan 2008 B1
7333295 Medina et al. Feb 2008 B1
7337530 Stoev et al. Mar 2008 B1
7342752 Zhang et al. Mar 2008 B1
7349170 Rudman et al. Mar 2008 B1
7349179 He et al. Mar 2008 B1
7354664 Jiang et al. Apr 2008 B1
7363697 Dunn et al. Apr 2008 B1
7369359 Fujita et al. May 2008 B2
7371152 Newman May 2008 B1
7372665 Stoev et al. May 2008 B1
7375926 Stoev et al. May 2008 B1
7379269 Krounbi et al. May 2008 B1
7386933 Krounbi et al. Jun 2008 B1
7389577 Shang et al. Jun 2008 B1
7392577 Yazawa et al. Jul 2008 B2
7417832 Erickson et al. Aug 2008 B1
7419891 Chen et al. Sep 2008 B1
7428124 Song et al. Sep 2008 B1
7430095 Benakli et al. Sep 2008 B2
7430098 Song et al. Sep 2008 B1
7436620 Kang et al. Oct 2008 B1
7436638 Pan Oct 2008 B1
7440220 Kang et al. Oct 2008 B1
7441325 Gao et al. Oct 2008 B2
7443632 Stoev et al. Oct 2008 B1
7444740 Chung et al. Nov 2008 B1
7464457 Le et al. Dec 2008 B2
7469467 Gao et al. Dec 2008 B2
7493688 Wang et al. Feb 2009 B1
7508626 Ichihara et al. Mar 2009 B2
7508627 Zhang et al. Mar 2009 B1
7522377 Jiang et al. Apr 2009 B1
7522379 Krounbi et al. Apr 2009 B1
7522382 Pan Apr 2009 B1
7535675 Kimura et al. May 2009 B2
7542246 Song et al. Jun 2009 B1
7551406 Thomas et al. Jun 2009 B1
7552523 He et al. Jun 2009 B1
7554767 Hu et al. Jun 2009 B1
7558019 Le et al. Jul 2009 B2
7580222 Sasaki et al. Aug 2009 B2
7583466 Kermiche et al. Sep 2009 B2
7595967 Moon et al. Sep 2009 B1
7639451 Yatsu et al. Dec 2009 B2
7639452 Mochizuki et al. Dec 2009 B2
7639457 Chen et al. Dec 2009 B1
7643246 Yazawa et al. Jan 2010 B2
7660080 Liu et al. Feb 2010 B1
7663839 Sasaki et al. Feb 2010 B2
7672079 Li et al. Mar 2010 B2
7672080 Tang et al. Mar 2010 B1
7672086 Jiang Mar 2010 B1
7684160 Erickson et al. Mar 2010 B1
7688546 Bai et al. Mar 2010 B1
7691434 Zhang et al. Apr 2010 B1
7695761 Shen et al. Apr 2010 B1
7719795 Hu et al. May 2010 B2
7726009 Liu et al. Jun 2010 B1
7729086 Song et al. Jun 2010 B1
7729087 Stoev et al. Jun 2010 B1
7736823 Wang et al. Jun 2010 B1
7748104 Bonhote et al. Jul 2010 B2
7764469 Ho et al. Jul 2010 B2
7785666 Sun et al. Aug 2010 B1
7796356 Fowler et al. Sep 2010 B1
7796360 Im et al. Sep 2010 B2
7796361 Sasaki et al. Sep 2010 B2
7800858 Bajikar et al. Sep 2010 B1
7819979 Chen et al. Oct 2010 B1
7829264 Wang et al. Nov 2010 B1
7841068 Chen et al. Nov 2010 B2
7846643 Sun et al. Dec 2010 B1
7855854 Hu et al. Dec 2010 B2
7859791 Toma et al. Dec 2010 B2
7869160 Pan et al. Jan 2011 B1
7872824 Macchioni et al. Jan 2011 B1
7872833 Hu et al. Jan 2011 B2
7881019 Hsiao et al. Feb 2011 B2
7898773 Han et al. Mar 2011 B2
7910267 Zeng et al. Mar 2011 B1
7911735 Sin et al. Mar 2011 B1
7911737 Jiang et al. Mar 2011 B1
7916425 Sasaki et al. Mar 2011 B2
7916426 Hu et al. Mar 2011 B2
7918013 Dunn et al. Apr 2011 B1
7921544 Sasaki et al. Apr 2011 B2
7924528 Sasaki et al. Apr 2011 B2
7968219 Jiang et al. Jun 2011 B1
7982989 Shi et al. Jul 2011 B1
8008912 Shang Aug 2011 B1
8012804 Wang et al. Sep 2011 B1
8015692 Zhang et al. Sep 2011 B1
8018677 Chung et al. Sep 2011 B1
8018678 Zhang et al. Sep 2011 B1
8024748 Moravec et al. Sep 2011 B1
8027125 Lee et al. Sep 2011 B2
8054586 Balamane et al. Nov 2011 B2
8066892 Guthrie et al. Nov 2011 B2
8072705 Wang et al. Dec 2011 B1
8074345 Anguelouch et al. Dec 2011 B1
8077418 Hu et al. Dec 2011 B1
8077434 Shen et al. Dec 2011 B1
8077435 Liu et al. Dec 2011 B1
8077557 Hu et al. Dec 2011 B1
8079135 Shen et al. Dec 2011 B1
8081403 Chen et al. Dec 2011 B1
8091210 Sasaki et al. Jan 2012 B1
8097846 Anguelouch et al. Jan 2012 B1
8104166 Zhang et al. Jan 2012 B1
8116033 Kameda et al. Feb 2012 B2
8116043 Leng et al. Feb 2012 B2
8116171 Lee Feb 2012 B1
8117738 Han et al. Feb 2012 B2
8125732 Bai et al. Feb 2012 B2
8125856 Li et al. Feb 2012 B1
8134794 Wang Mar 2012 B1
8136224 Sun et al. Mar 2012 B1
8136225 Zhang et al. Mar 2012 B1
8136805 Lee Mar 2012 B1
8141235 Zhang Mar 2012 B1
8146236 Luo et al. Apr 2012 B1
8149536 Yang et al. Apr 2012 B1
8151441 Rudy et al. Apr 2012 B1
8163185 Sun et al. Apr 2012 B1
8164760 Willis Apr 2012 B2
8164855 Gibbons et al. Apr 2012 B1
8164864 Kaiser et al. Apr 2012 B2
8165709 Rudy Apr 2012 B1
8166631 Tran et al. May 2012 B1
8166632 Zhang et al. May 2012 B1
8169473 Yu et al. May 2012 B1
8169741 Taguchi et al. May 2012 B2
8171618 Wang et al. May 2012 B1
8179636 Bai et al. May 2012 B1
8184399 Wu et al. May 2012 B2
8191237 Luo et al. Jun 2012 B1
8194365 Leng et al. Jun 2012 B1
8194366 Li et al. Jun 2012 B1
8196285 Zhang et al. Jun 2012 B1
8200054 Li et al. Jun 2012 B1
8203800 Li et al. Jun 2012 B2
8208350 Hu et al. Jun 2012 B1
8220140 Wang et al. Jul 2012 B1
8222599 Chien Jul 2012 B1
8225488 Zhang et al. Jul 2012 B1
8227023 Liu et al. Jul 2012 B1
8228633 Tran et al. Jul 2012 B1
8231796 Li et al. Jul 2012 B1
8233233 Shen et al. Jul 2012 B1
8233234 Hsiao et al. Jul 2012 B2
8233235 Chen et al. Jul 2012 B2
8233248 Li et al. Jul 2012 B1
8248728 Yamaguchi et al. Aug 2012 B2
8248896 Yuan et al. Aug 2012 B1
8254060 Shi et al. Aug 2012 B1
8257597 Guan et al. Sep 2012 B1
8259410 Bai et al. Sep 2012 B1
8259539 Hu et al. Sep 2012 B1
8262918 Li et al. Sep 2012 B1
8262919 Luo et al. Sep 2012 B1
8264792 Bai et al. Sep 2012 B2
8264797 Emley Sep 2012 B2
8264798 Guan et al. Sep 2012 B1
8270109 Ohtsu Sep 2012 B2
8270126 Roy et al. Sep 2012 B1
8276258 Tran et al. Oct 2012 B1
8277669 Chen et al. Oct 2012 B1
8279719 Hu et al. Oct 2012 B1
8284517 Sun et al. Oct 2012 B1
8288204 Wang et al. Oct 2012 B1
8289649 Sasaki et al. Oct 2012 B2
8289821 Huber Oct 2012 B1
8291743 Shi et al. Oct 2012 B1
8305711 Li et al. Nov 2012 B2
8307539 Rudy et al. Nov 2012 B1
8307540 Tran et al. Nov 2012 B1
8308921 Hiner et al. Nov 2012 B1
8310785 Zhang et al. Nov 2012 B1
8310901 Batra et al. Nov 2012 B1
8315019 Mao et al. Nov 2012 B1
8316527 Hong et al. Nov 2012 B2
8320076 Shen et al. Nov 2012 B1
8320077 Tang et al. Nov 2012 B1
8320219 Wolf et al. Nov 2012 B1
8320220 Yuan et al. Nov 2012 B1
8320722 Yuan et al. Nov 2012 B1
8322022 Yi et al. Dec 2012 B1
8322023 Zeng et al. Dec 2012 B1
8325569 Shi et al. Dec 2012 B1
8333008 Sin et al. Dec 2012 B1
8334093 Zhang et al. Dec 2012 B2
8336194 Yuan et al. Dec 2012 B2
8339738 Tran et al. Dec 2012 B1
8341826 Jiang et al. Jan 2013 B1
8343319 Li et al. Jan 2013 B1
8343364 Gao et al. Jan 2013 B1
8347488 Hong et al. Jan 2013 B2
8349195 Si et al. Jan 2013 B1
8351307 Wolf et al. Jan 2013 B1
8357244 Zhao et al. Jan 2013 B1
8373945 Luo et al. Feb 2013 B1
8375564 Luo et al. Feb 2013 B1
8375565 Hu et al. Feb 2013 B2
8381391 Park et al. Feb 2013 B2
8385157 Champion et al. Feb 2013 B1
8385158 Hu et al. Feb 2013 B1
8394280 Wan et al. Mar 2013 B1
8400731 Li et al. Mar 2013 B1
8404128 Zhang et al. Mar 2013 B1
8404129 Luo et al. Mar 2013 B1
8405930 Li et al. Mar 2013 B1
8409453 Jiang et al. Apr 2013 B1
8413317 Wan et al. Apr 2013 B1
8416540 Li et al. Apr 2013 B1
8419953 Su et al. Apr 2013 B1
8419954 Chen et al. Apr 2013 B1
8422176 Leng et al. Apr 2013 B1
8422342 Lee Apr 2013 B1
8422841 Shi et al. Apr 2013 B1
8424192 Yang et al. Apr 2013 B1
8441756 Sun et al. May 2013 B1
8443510 Shi et al. May 2013 B1
8444866 Guan et al. May 2013 B1
8449948 Medina et al. May 2013 B2
8451556 Wang et al. May 2013 B1
8451563 Zhang et al. May 2013 B1
8454846 Zhou et al. Jun 2013 B1
8455119 Jiang et al. Jun 2013 B1
8456961 Wang et al. Jun 2013 B1
8456963 Hu et al. Jun 2013 B1
8456964 Yuan et al. Jun 2013 B1
8456966 Shi et al. Jun 2013 B1
8456967 Mallary Jun 2013 B1
8458892 Si et al. Jun 2013 B2
8462592 Wolf et al. Jun 2013 B1
8468682 Zhang Jun 2013 B1
8472288 Wolf et al. Jun 2013 B1
8480911 Osugi et al. Jul 2013 B1
8486285 Zhou et al. Jul 2013 B2
8486286 Gao et al. Jul 2013 B1
8488272 Tran et al. Jul 2013 B1
8491801 Tanner et al. Jul 2013 B1
8491802 Gao et al. Jul 2013 B1
8493687 Sasaki et al. Jul 2013 B2
8493693 Zheng et al. Jul 2013 B1
8493695 Kaiser et al. Jul 2013 B1
8495813 Hu et al. Jul 2013 B1
8498080 Sasaki et al. Jul 2013 B2
8498084 Leng et al. Jul 2013 B1
8506828 Osugi et al. Aug 2013 B1
8514517 Batra et al. Aug 2013 B1
8518279 Wang et al. Aug 2013 B1
8518832 Yang et al. Aug 2013 B1
8520336 Liu et al. Aug 2013 B1
8520337 Liu et al. Aug 2013 B1
8524068 Medina et al. Sep 2013 B2
8526275 Yuan et al. Sep 2013 B1
8531801 Xiao et al. Sep 2013 B1
8532450 Wang et al. Sep 2013 B1
8533937 Wang et al. Sep 2013 B1
8537494 Pan et al. Sep 2013 B1
8537495 Luo et al. Sep 2013 B1
8537502 Park et al. Sep 2013 B1
8545999 Leng et al. Oct 2013 B1
8547659 Bai et al. Oct 2013 B1
8547667 Roy et al. Oct 2013 B1
8547730 Shen et al. Oct 2013 B1
8555486 Medina et al. Oct 2013 B1
8559141 Pakala et al. Oct 2013 B1
8563146 Zhang et al. Oct 2013 B1
8565049 Tanner et al. Oct 2013 B1
8576517 Tran et al. Nov 2013 B1
8578594 Jiang et al. Nov 2013 B2
8582238 Liu et al. Nov 2013 B1
8582241 Yu et al. Nov 2013 B1
8582253 Zheng et al. Nov 2013 B1
8588039 Shi et al. Nov 2013 B1
8593914 Wang et al. Nov 2013 B2
8597528 Roy et al. Dec 2013 B1
8599520 Liu et al. Dec 2013 B1
8599657 Lee Dec 2013 B1
8603593 Roy et al. Dec 2013 B1
8607438 Gao et al. Dec 2013 B1
8607439 Wang et al. Dec 2013 B1
8611035 Bajikar et al. Dec 2013 B1
8611054 Shang et al. Dec 2013 B1
8611055 Pakala et al. Dec 2013 B1
8614864 Hong et al. Dec 2013 B1
8619512 Yuan et al. Dec 2013 B1
8625233 Ji et al. Jan 2014 B1
8625941 Shi et al. Jan 2014 B1
8628672 Si et al. Jan 2014 B1
8630068 Mauri et al. Jan 2014 B1
8634280 Wang et al. Jan 2014 B1
8638529 Leng et al. Jan 2014 B1
8643980 Fowler et al. Feb 2014 B1
8649123 Zhang et al. Feb 2014 B1
8665561 Knutson et al. Mar 2014 B1
8670211 Sun et al. Mar 2014 B1
8670213 Zeng et al. Mar 2014 B1
8670214 Knutson et al. Mar 2014 B1
8670294 Shi et al. Mar 2014 B1
8670295 Hu et al. Mar 2014 B1
8675318 Ho et al. Mar 2014 B1
8675455 Krichevsky et al. Mar 2014 B1
8681594 Shi et al. Mar 2014 B1
8689430 Chen et al. Apr 2014 B1
8693141 Elliott et al. Apr 2014 B1
8703397 Zeng et al. Apr 2014 B1
8705205 Li et al. Apr 2014 B1
8711518 Zeng et al. Apr 2014 B1
8711528 Xiao et al. Apr 2014 B1
8717709 Shi et al. May 2014 B1
8720044 Tran et al. May 2014 B1
8721902 Wang et al. May 2014 B1
8724259 Liu et al. May 2014 B1
8749790 Tanner et al. Jun 2014 B1
8749920 Knutson et al. Jun 2014 B1
8753903 Tanner et al. Jun 2014 B1
8760807 Zhang et al. Jun 2014 B1
8760818 Diao et al. Jun 2014 B1
8760819 Liu et al. Jun 2014 B1
8760822 Li et al. Jun 2014 B1
8760823 Chen et al. Jun 2014 B1
8763235 Wang et al. Jul 2014 B1
8780498 Jiang et al. Jul 2014 B1
8780505 Xiao Jul 2014 B1
8786983 Liu et al. Jul 2014 B1
8790524 Luo et al. Jul 2014 B1
8790527 Luo et al. Jul 2014 B1
8792208 Liu et al. Jul 2014 B1
8792312 Wang et al. Jul 2014 B1
8793866 Zhang et al. Aug 2014 B1
8797680 Luo et al. Aug 2014 B1
8797684 Tran et al. Aug 2014 B1
8797686 Bai et al. Aug 2014 B1
8797692 Guo et al. Aug 2014 B1
8813324 Emley et al. Aug 2014 B2
20030076630 Sato et al. Apr 2003 A1
20040061988 Matono et al. Apr 2004 A1
20040184191 Ichihara et al. Sep 2004 A1
20050117251 Matono et al. Jun 2005 A1
20050162778 Kimura et al. Jul 2005 A1
20060044677 Li et al. Mar 2006 A1
20060158779 Ota et al. Jul 2006 A1
20060174474 Le Aug 2006 A1
20060225268 Le et al. Oct 2006 A1
20060288565 Le et al. Dec 2006 A1
20070211380 Akimoto et al. Sep 2007 A1
20070236834 Toma et al. Oct 2007 A1
20070247746 Kim et al. Oct 2007 A1
20070258167 Allen et al. Nov 2007 A1
20070263324 Allen et al. Nov 2007 A1
20070283557 Chen et al. Dec 2007 A1
20080002309 Hsu et al. Jan 2008 A1
20080151437 Chen et al. Jun 2008 A1
20080232001 Bonhote et al. Sep 2008 A1
20080273276 Guan Nov 2008 A1
20080273277 Guan et al. Nov 2008 A1
20090279206 Yang et al. Nov 2009 A1
20100112486 Zhang et al. May 2010 A1
20100146773 Li et al. Jun 2010 A1
20100165517 Araki et al. Jul 2010 A1
20100277832 Bai et al. Nov 2010 A1
20100290157 Zhang et al. Nov 2010 A1
20110051293 Bai et al. Mar 2011 A1
20110086240 Xiang et al. Apr 2011 A1
20110146060 Han et al. Jun 2011 A1
20110151279 Allen et al. Jun 2011 A1
20110205671 Benakli et al. Aug 2011 A1
20110222188 Etoh et al. Sep 2011 A1
20120111826 Chen et al. May 2012 A1
20120162811 Ishibashi et al. Jun 2012 A1
20120216378 Emley et al. Aug 2012 A1
20120237878 Zeng et al. Sep 2012 A1
20120268845 Sahoo et al. Oct 2012 A1
20120298621 Gao Nov 2012 A1
20130216702 Kaiser et al. Aug 2013 A1
20130216863 Li et al. Aug 2013 A1
20130257421 Shang et al. Oct 2013 A1
20140154529 Yang et al. Jun 2014 A1
20140175050 Zhang et al. Jun 2014 A1
Non-Patent Literature Citations (5)
Entry
Jinquiu Zhang, et al., U.S. Appl. No. 14/279,608, filed May 16, 2014, 36 pages.
Jinquiu Zhang, et al., U.S. Appl. No. 14/280,342, filed May 16, 2014, 38 pages.
Feng Liu, et al., U.S. Appl. No. 13/631,808, filed Sep. 28, 2012, 16 pages.
M. Mallary, et al., “One Terabit per Square Inch Perpendicular Recording Conceptual Design,” IEEE Transactions on Magnetics, vol. 38, No., Jul. 4, 2002, pp. 1719-1724.
Jinqiu Zhang, et al., U.S. Appl. No. 14/046,790, filed Oct. 4, 2013, 26 pages.
Provisional Applications (1)
Number Date Country
61914884 Dec 2013 US