The main pole 20 resides on an underlayer 12 and includes sidewalls 22 and 24. The sidewalls 22 and 24 of the conventional main pole 20 form an angle α0 with the down track direction at the ABS and an angle α1 with the down track direction at the distance x1 from the ABS. As can be seen in
The side shields 16 are separated from the main pole 20 by a side gap 14. The side shields 16 extend a distance back from the ABS. The gap 14 between the side shields 16 and the main pole 20 may have a substantially constant thickness. Thus, the side shields 16 are conformal with the main pole 20.
Although the conventional magnetic recording head 10 functions, there are drawbacks. In particular, the conventional magnetic recording head 10 may not perform sufficiently at higher recording densities. For example, the write field of the conventional main pole 20 may not have a sufficiently high magnitude write field without introducing adjacent track interference (ATI) issues. Accordingly, what is needed is a system and method for improving the performance of a magnetic recording head.
Referring to
A trench is formed in an intermediate layer using multiple etches, via step 102. The trench is formed such that the trench has different sidewall angles in different portions of the pole. For example, the sidewall angles at and near the ABS may be larger (further from perpendicular to the surface of the intermediate layer) than the sidewall angles in regions recessed from the ABS (termed the yoke herein). Step 102 includes using multiple etches in order to form various sidewall angles. A first etch may provide a first portion of the trench having a first sidewall angle, while a second etch may provide a second portion of the trench having a second sidewall angle. For example, a first etch may be performed on the portion of the intermediate layer corresponding to the yoke, while the second etch may be performed on the portion of the intermediate layer corresponding to the pole tip, including ABS location. In some embodiments, the pole tip is masked during the first etch and the yoke region covered by a mask during the second etch. In other embodiments, the yoke region may be uncovered during the second etch. In some such embodiments, the second etch of the pole tip region may also etch the yoke region. In other such embodiments, the second etch of the pole tip region is configured to leave the yoke region substantially unchanged. For example, the intermediate layer in the yoke region may be made of a different material than the intermediate layer in the pole tip region. This different material may not be removed by the etch chemistry used to form the trench in the pole tip region. In other embodiments, the pole tip region of the trench may be formed by the first etch, while the yoke region of the trench is formed by second etch.
The main pole is provided in the trench 208′, via step 104. In some embodiments, step 104 includes depositing a seed layer, such as Ru and/or magnetic seed layer(s). High saturation magnetization magnetic material(s) are also provided. For example, such magnetic materials may be plated and/or vacuum deposited.
The pole 210 has sidewall angles that decrease with increasing distance from the ABS. Thus, the sidewall angles of the pole 210 are less in the recessed view than in the ABS view.
Using the method 100, a magnetic transducer 200 having improved performance may be fabricated. For example, the sidewall angles of the pole may vary because of the manner in which the trench is formed. This may be achieved while exposing the ABS to only a single etch in forming the trench. In addition, a nonconformal side gap might be provided. This may also improve performance of the transducer 200. These benefits may be achieved without significantly complicating processing. Thus, performance of the disk drive may be improved.
Referring to
A first etch of the intermediate layer 208 is performed, via step 118. Thus, a portion of the trench is formed. This portion of the trench has a particular sidewall angle. Step 118 may be performed in the presence of one or more masks. If one mask is present, then the mask may expose only the portion of the intermediate layer to be removed in step 118. Alternatively, the aperture may expose regions of the intermediate layer that are not to be removed in step 118 if multiple materials are present and the etch chemistry used in step 118 only removes the desired material(s). Multiple masks may also be used. One mask may have a first aperture under which the entire trench is to be formed. Another mask may expose a portion of the first aperture and cover another portion of the first aperture. Thus, only a portion of the trench may be formed.
A second etch of the intermediate layer 208 is performed, via step 120. A second portion of the intermediate layer is removed and a second portion of the trench formed in step 120. Step 120 may be performed in an analogous manner to step 118. Thus, a trench 208′ having varying sidewall angles may be provided.
The method 110 may be used to perform step 102 of the method 100 depicted in
The first material(s) for the intermediate layer are provided, via step 152. This step may include full film depositing aluminum oxide, silicon oxide or another layer on an underlayer. A first portion of the first material(s) may optionally be removed, via step 154. Thus, an aperture may be formed in the first material(s). A second set of material(s) is optionally provided in the aperture formed in the first material(s), via step 156. Thus, an intermediate layer having multiple constituents may be formed in steps 152-156. For example, materials that are etchable using different etch chemistries may be used in steps 152-156. The material(s) may have the same or different etch characteristics for a particular etch chemistry. Thus, an intermediate layer in which the etching may be tailored is provided in steps 152-156.
At least one mask that exposes a portion of the intermediate layer is provided, via step 158. A first etch is performed, via step 160. For example, a reactive ion etch (RIE) appropriate for the portion of the intermediate layer to be removed may be performed in step 160.
The mask 260 is removed, via step 162. Thus, an additional portion of the intermediate layer 254 is exposed in the aperture 258. An additional etch is performed, via step 164. If the intermediate layer 254 is a single layer, the same etch chemistry may be used for the RIE in step 164 as for step 160. In the embodiment shown in
A seed layer that is resistant to an etch of the intermediate layer 254 is deposited in the trench, via step 166. In some embodiments, this seed layer may serve as at least part of the gap. The seed layer may include material(s) such as Ru. In other embodiments, a magnetic seed layer may be used in lieu of or in addition to a nonmagnetic seed layer.
The main pole may then be provided, via step 168. Step 168 includes depositing high saturation magnetization magnetic material(s), for example via electroplating. In some embodiments, the pole provided in step 168 fills the trench 262. However, in other embodiments, the pole may occupy only a portion of the trench. For example, a mask such as a photoresist may be provided. The mask has an aperture that exposes only a portion of the trench 262. In some embodiments, all of the pole tip/ABS region is exposed, but only a portion of the yoke and paddle regions are exposed. The magnetic material(s) for the main pole may then be plated and the mask removed. A planarization, such as a chemical mechanical planarization (CMP) may also be performed. A leading bevel may be naturally formed in the magnetic pole in step 168 due to the shape of the trench 262 and the deposition techniques used. A trailing bevel may also be provided in step 168. For example, a portion of the main pole may be covered by a mask after the planarization. Another portion of the main pole at and near the ABS may be removed, for example via an ion mill. The portion of the trench 262 between the main pole and the seed layer(s) provided in step 166 may be optionally refilled with a nonmagnetic material, such as aluminum oxide, via step 170. In embodiments in which a side shield is provided, the refill and seed layers provided in step 166 may be used to form a side gap that is conformal in some regions and nonconformal in other regions.
The portion of the intermediate layer outside of the trench 262 may optionally be removed, via step 172. The side shield(s) may be provided, via step 174. Step 174 may also include providing a wraparound shield. The magnetic material(s) may thus be plated or otherwise deposited.
Using the method 150, the pole 270 may be provided. The sidewall angles of the pole 270 may vary because of the manner in which the trench is formed and/or because the pole may be deposited with another mask in place. This may be achieved while exposing the ABS to only a single etch in forming the trench. In addition, a nonconformal side gap might be provided. This may also improve performance of the transducer 250. These benefits may be achieved without significantly complicating processing. Thus, performance of the disk drive may be improved.
Using the method 150, the magnetic transducers 250 and/or 250′ may be provided. The sidewall angles of the pole 270′ may vary because of the manner in which the trench is formed and/or because the pole may be deposited with another mask in place. This may be achieved while exposing the ABS to only a single etch in forming the trench. In addition, a nonconformal side gap might be provided. This may also improve performance of the transducer 250′. These benefits may be achieved without significantly complicating processing. Thus, performance of the disk drive may be improved.
This application claims priority to provisional U.S. Patent Application Ser. No. 61/914,884, filed on Dec. 11, 2013, which is hereby incorporated by reference in its entirety.
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