METHOD FOR FABRICATING MICROMETER OR NANOMETER CHANNELS

Abstract

Thin films, which are deposited on a sacrificial film on a substrate, are released and bonded back on a substrate surface. This technology provides open and closed 2D confined micro-/nano-channels and channel networks on a substrate surface. The geometry, size and complexity of the channels and channel networks can be modified by the film and substrate properties as well as the treatment techniques of the sacrificial layer etching. A method to fabricate such structures with position- and pattern-controllability is provided.

Description

The present invention is explained in more detail in the following by way of specific embodiments in connection with the drawings, which represent

FIG. 1 a general form of the structure fabricated by the inventive method as a first embodiment of the invention;

FIG. 2A to 2C a linear form of the structure fabricated by the inventive method as a second embodiment of the invention;

FIG. 3 a circular form of the structure fabricated by the inventive method as a third embodiment of the invention;

FIG. 4 a further specific form of the structure fabricated by the inventive method as a fourth embodiment of the invention.

Claims

1. A method of fabricating at least one micrometer or nanometer channel, the method comprising the steps of a) providing a layered structure including a substrate, a sacrificial layer on top of the substrate, and a compressively strained functional layer on top of the sacrificial layer,b) selectively removing at least a portion of the sacrificial layer between the substrate and the functional layer.

2. The method according to claim 1, wherein step b) comprises selectively etching the sacrificial layer.

3. The method according to claim 2, wherein step b) comprises introducing an etchant in an opening of the layered structure, wherein the opening extends through the functional layer at least to the sacrificial layer.

4. The method according to claim 3, wherein the opening is intentionally formed into the layered structure.

5. The method according to one of claims 3 or 4, wherein the opening has the form of an elongated groove.

6. The method according to one of claims 3 or 4, wherein the opening has the form of a circle.

7. The method according to one of the preceding claims, wherein step a) comprises selecting a first crystalline material for the sacrificial layer and a second crystalline material for the functional layer, wherein the second crystalline material has a higher lattice constant than the first crystalline material and the functional layer is grown epitaxially onto the sacrificial layer so that the functional layer is in a compressively strained state.

8. The method according to claim 7, wherein the second crystalline material is Si1-xGex where 0≦x≦1.

9. The method according to claim 7 or 8, wherein the first crystalline material is SiOx where 0≦x≦2, in particular 0≦x≦1.