This application claims priority from European Patent Application No 15201337.1 of Dec. 18, 2015, the entire disclosure of which is hereby incorporated herein by reference.
The invention relates to a method for fabrication of a balance spring of predetermined stiffness and, more specifically, such a balance spring used as a compensating balance spring cooperating with a balance of predetermined inertia to form a resonator having a predetermined frequency.
It is explained in EP Patent 1422436, incorporated in the present Application by reference, how to form a compensating balance spring comprising a silicon core coated with silicon dioxide and cooperating with a balance having a predetermined inertia for thermal compensation of said entire resonator.
The fabrication of such a compensating balance spring offers numerous advantages but also has drawbacks. Indeed, the step of etching several balance springs in a silicon wafer offers a significant geometric dispersion between the balance springs of the same wafer and a greater dispersion between the balance springs of two wafers etched at different times. Incidentally, the stiffness of each balance spring etched with the same etch pattern is variable, creating significant fabrication dispersions.
It is an object of the present invention to overcome all of part of the aforecited drawbacks by proposing a method for fabrication of a balance spring whose dimensions are sufficiently precise not to require further operations.
The invention therefore relates to a method for fabrication of a balance spring of a predetermined stiffness including the following steps:
It is thus understood that the method can guarantee very high dimensional precision of the balance spring, and incidentally, a more precise stiffness of said balance spring. Any fabrication parameter able to cause geometric variations in step a) can thus be completely rectified for each fabricated balance spring, or rectified on average for all the balance springs formed at the same time, thereby drastically reducing the scrap rate.
In accordance with other advantageous variants of the invention:
Other features and advantages will appear clearly from the following description, given by way of non-limiting illustration, with reference to the annexed drawings, in which:
As illustrated in
I=mr2 (1)
where m represents its mass and r the turn radius which also depends on temperature through the expansion coefficient αb of the balance.
Further, the stiffness C of balance spring 5 of constant cross-section responds to the formula:
where E is the Young's modulus of the material used, h the height, e the thickness and L the developed length thereof.
Further, the stiffness C of a balance spring 5 of constant cross-section responds to the formula:
where E is the Young's modulus of the material used, h the height, e the thickness and L the developed length and I the curvilinear abscissa along the balance spring.
Further, the stiffness C of a balance spring 5 of variable thickness but constant cross-section responds to the formula:
where E is the Young's modulus of the material used, h the height, e the thickness and L the developed length and I the curvilinear abscissa along the balance spring.
Finally, the elastic constant C of sprung balance resonator 1 answers to the formula:
According to the invention, it is desired that a resonator has substantially zero frequency variation with temperature. The frequency variation f with temperature T in the case of a sprung-balance resonator substantially follows the following formula:
where:
is a relative frequency variation;
is the relative Young's modulus variation with temperature, i.e. the thermoelastic coefficient (TEC) of the balance spring;
Since the oscillations of any resonator intended for a time or frequency base must be maintained, the maintenance system may also contribute to thermal dependence, such as, for example, a Swiss lever escapement (not shown) cooperating with the impulse pin 9 of the roller 11, also mounted on arbor 7.
It is thus clear, from formulae (1)-(6), that through the choice of materials used to couple balance spring 5 with balance 3, for the frequency f of resonator 1 to be virtually insensitive to temperature variations.
The invention more particularly concerns a resonator 1 wherein the balance spring 5 is used to thermally compensate the entire resonator 1, i.e. all the parts and particularly the balance 3. Such a balance spring 5 is generally called a temperature compensating balance spring. This is why the invention relates to a method that can guarantee very high dimensional precision of the balance spring, and incidentally, guarantee a more precise stiffness of said balance spring.
According to the invention, compensating balance spring 5, 15 is formed from a material, possibly coated with a thermal compensation layer, and intended to cooperate with a balance 3 having a predetermined inertia. However, there is nothing to prevent the use of a balance with movable inertia-blocks able to offer an adjustment parameter prior to or after the sale of the timepiece.
The utilisation of a material, for example made from silicon, glass or ceramic, for the fabrication of a balance spring 5, 15 offers the advantage of being precise via existing etching methods and of having good mechanical and chemical properties while being virtually insensitive to magnetic fields. It must, however, be coated or surface modified to be able to form a compensating balance spring.
Preferably, the silicon-based material used to make the compensated balance spring may be single crystal silicon, regardless of its crystal orientation, doped single crystal silicon, regardless of its crystal orientation, amorphous silicon, porous silicon, polycrystalline silicon, silicon nitride, silicon carbide, quartz, regardless of its crystal orientation, or silicon oxide. Of course, other materials may be envisaged, such as glass, ceramics, cermets, metals or metal alloys. For the sake of simplification, the following explanation will concern a silicon-based material.
Each material type can be surface-modified or coated with a layer to thermally compensate the base material as explained above.
Although the step of etching balance springs in a silicon-based wafer, by means of deep reactive ion etching (DRIE) is the most precise, phenomena which occur during the etch or between two successive etches may nonetheless cause geometric variations.
Of course, other fabrication types may be implemented, such as laser etching, focused ion beam etching (FIB), galvanic growth, growth by chemical vapour deposition or chemical etching, which are less precise and for which the method would be even more meaningful.
Thus, the invention relates to a method 31 for fabrication of a balance spring 5c. According to the invention, method 31 comprises, as illustrated in
Preferably, the dimensions Da of balance spring 5a are substantially between 1% and 20% smaller than those Db of balance spring 5c necessary to obtain said balance spring 5c of a predetermined stiffness C.
Preferably according to the invention, step 33 is achieved by means of a deep reactive ion etch in a wafer 23 of silicon-based material, as illustrated in
Of course, the method is not limited to a particular step 33. By way of example, step 33 could also be obtained by means of a chemical etch in a wafer 23, for example of silicon-based material. Further, step 33 means that one or more balance springs are formed, i.e. step 33 can form individual loose balance springs or, alternatively, balance springs formed in a wafer of material.
Consequently, in step 33, several balance springs 5a can be formed in the same wafer 23 in dimensions Da, H1, E1 smaller than the dimensions Db, H2, E2 necessary to obtain several balance springs 5c of a predetermined stiffness C or several balance springs 5c of several predetermined stiffnesses C.
Step 33 is also not limited to forming a balance spring 5a in dimensions Da, H1, E1 smaller than the dimensions Db, H2, E2 necessary to obtain a balance spring 5c of a predetermined stiffness C, produced using a single material. Thus, step 33 could also form a balance spring 5a in dimensions Da, H1, E1 smaller than the dimensions Db, H2, E2 a necessary to obtain a balance spring 5c of a predetermined stiffness C made from a composite material, i.e. comprising several distinct materials.
Method 31 includes a second step 35 intended to determine the stiffness of balance spring 5a. This step 35 may be performed directly on a balance spring 5a still attached to wafer 23 or on a balance spring 5a previously detached from wafer 23, on all, or on a sample of the balance springs still attached to a wafer 23, or on a sample of balance springs previously detached from a wafer 23.
Preferably according to the invention, regardless of whether or not balance spring 5a is detached from wafer 23, step 35 includes a first phase intended to measure the frequency f of an assembly comprising balance spring 5a coupled to a balance having a predetermined inertia I and then, using the relation (5), to deduce therefrom, in a second phase, the stiffness C of balance spring 5a.
This measuring phase may, in particular, be dynamic and performed in accordance with the teaching of EP Patent 2423764, incorporated by reference in the present Application. However, alternatively, a static method, performed in accordance with the teaching of EP Patent 2423764, may also be implemented to determine the stiffness C of balance spring 5a.
Of course, as explained above, since the method is not limited to the etching of only one balance spring per wafer, step 35 may also consist in the determination of the mean stiffness of a representative sample, or of all the balance springs formed on the same wafer.
Advantageously according to the invention, based on the determination of the stiffness C of balance spring 5a, method 31 includes a step 37 intended to calculate, with the aid of relation (2), the missing thickness of material required to obtain balance spring 5c of a predetermined stiffness C, i.e. the volume of material to be added and/or to be modified in a homogeneous or non-homogeneous manner, on the surface of balance spring 5a.
The method continues with a step 39 intended to modify balance spring 5a formed in step a), to compensate for said missing thickness of material required to obtain balance spring 5c in the dimensions Db, H2, E2 necessary for said predetermined stiffness C. It is therefore understood that it does not matter whether geometric variations have occurred in the thickness and/or the height and/or the length of balance spring 5a given that, according to equation (2), it is the product h·e3 that determines the stiffness of the coil.
Thus, a homogeneous thickness can be added and/or modified on the entire external surface, a non-homogeneous thickness can be added and/or modified on the entire external surface, a homogeneous thickness can be added and/or modified on only one part of the external surface, or a non-homogeneous thickness can be added and/or modified on only one part of the external surface. By way of example, step 39 could consist in only adding material to the thickness E1 or to the height H1 of balance spring 5a.
In a first variant, step 39 includes a phase d1 intended to deposit a layer on one part of the external surface of balance spring 5a formed in step 33, in order to obtain balance spring 5c in the dimensions Db, H2, E2 necessary for said predetermined stiffness C. This phase d1 may, for example, be obtained by thermal oxidation, by galvanic growth, by physical phase deposition (PVD), by chemical phase deposition (CVD), by atomic layer deposition (ALD), or by any other method of addition.
This phase d1 may, for example, be achieved by a chemical vapour deposition allowing polysilicon to be formed on the single crystal silicon balance spring 5a, to obtain balance spring 5c in the dimensions Db, H2, E2 necessary for predetermined stiffness C.
As seen in
In a second variant, step 39 may consist of a phase d2 intended to modify the structure, to a predetermined depth, of one part of the external surface of balance spring 5a in order to obtain balance spring 5c in the dimensions Db, H2, E2 necessary for predetermined stiffness C. By way of example, illustrated in
In a third variant, step 39 may consist of a phase d3 intended to modify the composition, to a predetermined depth, of one part of the external surface of balance spring 5a of a predetermined stiffness C. By way of example, illustrated in
For these three variants, it is seen that the undulating shape is always reproduced on a portion of peripheral part 24 and central part 22. Thus, a smoothing step may be provided before step 39 to attenuate, or remove, any undulating shape of balance spring 5a.
Method 31 may end with step 39. However, after step 39, method 31 may also perform, at least once more, steps 35, 37 and 39 in order to further improve the dimensional quality of the balance spring. These iterations of steps 35, 37 and 39 may, for example, be of particular advantage when the first iteration of steps 35, 37 and 39 is performed on all, or on a sample, of the balance springs still attached to a wafer 23, and then, in a second iteration, on all, or a sample, of the balance springs previously detached from wafer 23 and having undergone the first iteration.
Method 31 may also continue with all or part of process 40 illustrated in
In a first variant, step 41 may consist of a phase e1 intended to deposit a layer on one part of the external surface of said balance spring 5c of a predetermined stiffness C.
In the case where parts 22/24 are made from a silicon-based material, phase e1 may consist in oxidising balance spring 5c to coat it with silicon dioxide to correct the stiffness of balance spring 5c and to form a balance spring 5, 15 which is temperature compensated. This phase e1 may, for example, be obtained by thermal oxidation. This thermal oxidation may, for example, be achieved between 800 and 1200° C. in an oxidising atmosphere with the aid of water vapour or dioxygen gas to form silicon oxide on balance spring 5c.
There is thus obtained compensating balance spring 5, 15, as illustrated in
In the case of a silicon-based balance spring, the overall dimensions Db may be found by using the teaching of EP Patent 1422436 to apply to the resonator 1 which is intended to be fabricated, i.e to compensate all of the constituent parts of resonator 1, as explained above.
In a second variant, step 41 may consist in a phase e2 intended to modify the structure, to a predetermined depth, of one part of the external surface of said balance spring 5c of a predetermined stiffness C. By way of example, if an amorphous silicon is used for peripheral part 24 and possibly, central part 22, it could be crystallised to a predetermined depth in peripheral part 24 and possibly in central part 22.
In a third variant, step 41 may consist in a phase e3 intended to modify the composition, to a predetermined depth, of one part of the external surface of said balance spring 5c of a predetermined stiffness C. By way of example, if a single crystal silicon or polycrystalline silicon is used for peripheral part 24 and, possibly, central part 22, it could be doped or diffused with interstitial or substitional atoms, to a predetermined depth, in peripheral part 24 and, possibly, in central part 22.
Advantageously according to the invention, it is thus possible, with no further complexity, to fabricate, as illustrated in
Finally, method 31 may also comprise step 45 intended to assemble a compensating balance spring 5, 15 obtained in step 41, or a balance spring 5c obtained in step 39, to a balance having a predetermined inertia obtained in step 43, to form a resonator 1 of the sprung balance type, which may or may not be temperature compensated, i.e. whose frequency f is or is not sensitive to temperature variations.
Of course, the present invention is not limited to the illustrated example but is capable of various variants and modifications that will appear to those skilled in the art. In particular, as explained above, the balance, even if it has an inertia predefined by design, may comprise movable inertia-blocks offering an adjustment parameter prior to or after the sale of the timepiece.
Further, an additional step could be provided, between step 39 and step 41, or between step 39 and step 45, for depositing a functional or aesthetic layer, such as, for example, a hardening layer or a luminescent layer.
It is also possible to envisage, when method 31 performs, after step 39, one or more iterations of steps 35, 37 and 39, that step 35 is not systematically implemented.
Number | Date | Country | Kind |
---|---|---|---|
15201337 | Dec 2015 | EP | regional |
Number | Name | Date | Kind |
---|---|---|---|
20050281137 | Bourgeois | Dec 2005 | A1 |
20120048035 | Cerutti | Mar 2012 | A1 |
20130272100 | Klinger et al. | Oct 2013 | A1 |
20130308430 | Verardo et al. | Nov 2013 | A1 |
20150261187 | Hessler | Sep 2015 | A1 |
20160238994 | Ching | Aug 2016 | A1 |
20160370763 | Cusin | Dec 2016 | A1 |
Number | Date | Country |
---|---|---|
709 516 | Oct 2015 | CH |
1 213 628 | Jun 2002 | EP |
2 455 825 | May 2012 | EP |
WO 2012007460 | Jan 2012 | WO |
Entry |
---|
European Search Report dated May 24, 2016 in European Application 15201337, filed on Dec. 18, 2015 ( with English translation of Categories of Cited Documents). |
Number | Date | Country | |
---|---|---|---|
20170176942 A1 | Jun 2017 | US |