Claims
- 1. An asymmetric waveguide nitride laser diode structure comprising:
an active layer having a first and second surface; a transition layer in contact with said first surface of said active layer; a p-cladding layer disposed adjacent to said transition layer; and an n-type layer in contact with said second surface of said active layer.
- 2. The structure of claim 1 wherein said n-type layer is a waveguiding layer.
- 3. The structure of claim 2 wherein said waveguide layer is comprised of silicon.
- 4. The structure of claim 1 wherein said p-cladding layer is comprised of magnesium.
- 5. The structure of claim 1 wherein said p-cladding layer is in contact with a cap layer acting as an ohmic contact.
- 6. The structure of claim 2 wherein an n-cladding layer is in contact with said waveguiding layer.
- 7. The structure of claim 1 wherein said transition layer has a thickness less than 0.01 μm.
- 8. The structure of claim 1 wherein said transition layer is undoped.
- 9. The structure of claim 6 wherein said n-cladding layer comprises more aluminum than said p-cladding layer.
- 10. The structure of claim 1 wherein said p-cladding layer has a thickness less than 0.005 μm.
- 11. A method for forming an asymmetric waveguide nitride laser diode comprising the steps of:
providing an active layer having a first and second surface; placing a transition layer in contact with said first surface of said active layer; placing a p-cladding layer adjacent to said transition layer; and having an n-type layer in contact with said second surface of said active layer.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
[0001] This invention was made with Government support under Agreement No. MDA972-96-3-0014 awarded by DARPA. The Government may have certain rights in the invention.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09288879 |
Apr 1999 |
US |
Child |
09998335 |
Dec 2001 |
US |