Claims
- 1. A method for forming an asymmetric waveguide nitride laser diode comprising the operations of:providing an active layer having a first and a second surface; forming a transition layer in contact with said first surface of said active layer; forming a p-cladding layer adjacent to said transition layer; and forming an N-type layer in contact with said second surface of said active layer.
- 2. The method of claim 1 further comprising the operation of:placing a cap layer in contact with said p-cladding layer.
- 3. The method of claim 1 further comprising the operation of:forming an n-cladding layer in contact with the n-type layer.
- 4. The method of claim 1 wherein the N-type layer is used as a waveguide.
- 5. The method of claim 1 wherein the transition layer is undoped.
Parent Case Info
This application is a divisional of application Ser. No. 09/288,879, filed Apr. 9, 1999, now U.S. Pat. No. 6,430,202.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
This invention was made with Government support under Agreement No. MDA972-96-3-0014 awarded by DARPA. The Government may have certain rights in the invention.
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