Claims
- 1. A method for forming a barrier film having a high colorless water white transparency comprising the steps of providing a flexible plastic substrate having a surface and evaporating a single dielectric material having a purity of 99.0% or greater selected from the group consisting of aluminum oxide, tin oxide and yttrium oxide to form a barrier layer of such material having a thickness of 50 to less than 300 Angstroms directly onto said surface of said plastic substrate for reducing water and oxygen permeability.
- 2. A method as in claim 1 together with the step of forming a heat seal layer on the barrier layer.
- 3. A method as in claim 1 wherein the material utilized for the barrier layer is evaporated by electron beam evaporation.
- 4. A method for forming a barrier film having a high colorless water white transparency comprising the steps of providing a flexible plastic substrate having a surface and evaporating a single dielectric material selected from the group consisting of aluminum oxide, tin oxide and yttrium oxide to form a barrier layer of a thickness of 50 to less than 300 Angstroms directly onto said surface of said plastic substrate for reducing water and oxygen permeability, said barrier layer being formed by reactive sputtering in a vacuum.
- 5. A method for forming a barrier film having a high colorless water white transparency comprising the steps of providing a flexible plastic substrate having a surface and evaporating a single dielectric material selected from the group consisting of aluminum oxide, tin oxide and yttrium oxide to form a barrier layer of a thickness of 50 to less than 300 Angstroms directly onto said surface of said plastic substrate for reducing water and oxygen permeability, providing an additional flexible plastic substrate having a surface, providing a laminating adhesive on the surface of the additional substrate and laminating the additional substrate to the first named substrate by bringing the laminating adhesive into contact with the barrier layer.
- 6. A method for forming a barrier film having a high colorless water white transparency comprising the steps of providing a flexible plastic substrate having a surface and evaporating a single dielectric material selected from the group consisting of aluminum oxide, tin oxide and yttrium oxide to form a barrier layer of a thickness of 50 to less than 300 Angstroms directly onto said surface of said plastic substrate for reducing water and oxygen permeability and providing a heat seal coating on the barrier layer and on the side of the substrate opposite the barrier layer.
- 7. A method for forming a barrier film having a high colorless water white transparency comprising the steps of providing a flexible plastic substrate consisting essentially of polypropylene and having a surface and evaporating a single dielectric material selected from the group consisting of aluminum oxide, tin oxide and yttrium oxide to form a barrier layer of a thickness of 50 to less than 300 Angstroms directly onto said surface of said flexible plastic substrate for reducing water and oxygen permeability, providing an additional flexible plastic substrate formed essentially of polypropylene, providing a barrier layer on the additional flexible plastic substrate and providing a laminating adhesive between the barrier layer on the first named flexible plastic substrate and the barrier layer on the additional substrate.
- 8. A method for forming a barrier film having a high colorless water white transparency comprising the steps of providing a flexible plastic substrate having a surface and evaporating a single dielectric material selected from the group consisting of aluminum oxide, tin oxide and yttrium oxide to form a barrier layer of a thickness of 50 to less than 300 Angstroms directly onto said surface of said plastic substrate for reducing water and oxygen permeability and evaporating onto the barrier layer a layer of silicon dioxide having a thickness ranging from 100 to 1000 Angstroms.
- 9. A method as in claim 8 wherein the barrier and silicon dioxide layers are evaporated onto the substrate while the substrate is moving.
- 10. A method as in claim 8 wherein the material utilized for the silicon dioxide layer is evaporated by utilizing electron beam evaporation.
- 11. A method as in claim 8 wherein the silicon dioxide layer is reactively sputtered onto the barrier layer.
Parent Case Info
This application is a continuation-in-part of application Ser. No. 07/785,870 filed Nov. 1, 1991, now abandoned, which is continuation of application Ser. No. 07/535,183, filed Jun. 8, 1990, now abandoned, which is a continuation-in-part of application Ser. No. 07/426,342 filed on Oct. 24, 1989, now abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (2)
| Number |
Date |
Country |
| 793635 |
Apr 1958 |
GB |
| 2210826 |
Jun 1989 |
GB |
Continuations (1)
|
Number |
Date |
Country |
| Parent |
07/535183 |
Jun 1990 |
US |
| Child |
07/785870 |
|
US |
Continuation in Parts (2)
|
Number |
Date |
Country |
| Parent |
07/785870 |
Nov 1991 |
US |
| Child |
08/062736 |
|
US |
| Parent |
07/426342 |
Oct 1989 |
US |
| Child |
07/535183 |
|
US |