Claims
- 1. A method for forming a surface layer on a base material, said method being characterized in that an electric discharge process is conducted in a process liquid not becoming part of the surface layer by the use of silicon, germanium, bismuth or zirconium as a positive electrode for said electric discharge process wherein a multitude of very fine electrical discharges takes place simultaneously on the entire surface of the electrode, electrode material having low heat conductivity being sputtered onto the surface of the base material and the base material being abruptly heated and cooled to thereby form on the surface of said base material a layer having an amorphous alloy structure or a very fine crystal structure.
- 2. A method for forming a surface layer on a base material, said method being characterized in that an electric discharge process is conducted in a process liquid not becoming part of the surface layer by use of silicon, germanium, bismuth or zirconium as a positive electrode to which an electric potential of +300 mV or below is applied for said electric discharge process wherein a multitude of very fine electrical discharges takes place simultaneously on the entire surface of the electrode, electrode material having low heat conductivity being sputtered onto the surface of the base material and the base material being abruptly heated and cooled to thereby form on the surface of said base material a layer having an amorphous alloy structure or a very fine crystal structure.
- 3. A method for forming a surface layer on a base material, said method being characterized in that an electric discharge process is conducted in a process liquid not becoming part of the surface layer by use of silicon, germanium, bismuth or zirconium as an electrode having a surface area if 15 cm.sup.2 or more for said electric discharge process wherein a multitude of very fine electrical discharges takes place simultaneously on the entire surface of the electrode, electrode material having low heat conductivity being sputtered onto the surface of the base material and the base material being abruptly heated and cooled to thereby form on the surface of said base material a layer having an amorphous alloy structure or a very fine crystal structure.
- 4. The method according to claims 1, 2 or 3, wherein said electrode is silicon.
- 5. The method according to claims 1, 2 or 3, wherein said electrode is germanium.
- 6. The method according to claims 1, 2 or 3, wherein said electrode is bismuth.
- 7. The method according to claims 1, 2 or 3, wherein said electrode is zirconium.
- 8. The method according to claims 1, 2 or 3, wherein said base material is a metal alloy or a single metal.
- 9. The method according to claims 1, 2 or 3, wherein said electrode consists of silicon, germanium, bismuth or zirconium.
- 10. The method according to claims 1, 2 or 3, wherein said process liquid is an oil.
- 11. The method according to claims 1, 2 or 3 wherein said process liquid is a liquefied gas.
Priority Claims (1)
Number |
Date |
Country |
Kind |
60-161566 |
Jul 1985 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 233,822, filed on Aug. 10, 1988, which was a Continuation-in-Part of application Ser. No. 887,939, filed July 22, 1986, both now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
1367796 |
Cadwell |
Feb 1921 |
|
4609564 |
Pinkhasov |
Sep 1986 |
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Foreign Referenced Citations (1)
Number |
Date |
Country |
0064372 |
Apr 1983 |
JPX |
Non-Patent Literature Citations (1)
Entry |
IUPAC-Rules 1970, Nomenclature of Inorganic Chemistry, p. 11, paragraph 1.22. |
Continuations (1)
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Number |
Date |
Country |
Parent |
233822 |
Aug 1988 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
887939 |
Jul 1986 |
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