Claims
- 1. A method of preparing high temperature superconductor single crystals, comprising the steps of:
- preparing a precursor material having a selected composition;
- heating said precursor material in a crucible and achieving a peritectic equilibrium mixture of phases including a peritectic liquid and crystals of high temperature superconductor;
- cooling said peritectic equilibrium mixture in said crucible to form a solid mass in said crucible;
- removing said solid mass from said crucible;
- positioning a substrate having a porosity and being inert to said peritectic equilibrium mixture and placing said solid mass on said substrate;
- wicking off said peritectic liquid using said substrate, leaving behind crystals of said high temperature superconductor on said substrate; and
- removing said crystals from said substrate.
- 2. The method as defined in claim 1 wherein said step of preparing precursor material comprises preparing a mixture of materials together which correspond to said selected composition.
- 3. The method as defined in claim 2 wherein said high temperature superconductor comprise 123 Nd Ba Cu oxide and said precursor material consists essentially of Nd.sub.2 O.sub.3, CuO and BaCO.sub.3 in the mole percent ratio of 1:10:4.
- 4. The method as defined in claim 1 wherein said high temperature superconductor is selected from the group consisting of 123 NdBaCu oxide, 123 SmBaCu oxide and 123 YBaCu oxide.
- 5. The method as defined in claim 1 wherein said step of heating said precursor material comprises heating to a peritectic phase region and forming and growing said crystals.
- 6. The method as defined in claim 5 wherein said step of growing said crystals includes slowly cooling said mixture of peritectic liquid and crystals at least through said peritectic phase region.
- 7. The method as defined in claim 1 wherein said crucible consists essentially of a material inert to said peritectic liquid and crystals.
- 8. The method as defined in claim 1 wherein said substrate comprises a material inert to said peritectic liquid and crystals.
- 9. The method as defined in claim 8 wherein said substrate comprises a higher melting point compound consisting essentially of elemental constituents present in said high temperature superconductor.
- 10. A method of preparing high temperature superconductor single crystals, comprising the steps of:
- preparing a precursor material having a selected composition;
- heating said precursor material and achieving a peritectic mixture of phases including a peritectic liquid and crystals of high temperature superconductor;
- positioning near said peritectic mixture a substrate having a porosity and being inert to said peritectic mixture;
- quenching said peritectic mixture on said substrate;
- wicking off said peritectic liquid using said substrate, leaving behind crystals of said high temperature superconductor on said substrate; and
- removing said crystals from said substrate.
- 11. The method as defined in claim 10 wherein said precursor material comprises a mixture of compounds.
- 12. The method as defined in claim 10 wherein said high temperature superconductor is selected from the group consisting of 123 NdBaCu oxide, 123 SmBaCu oxide and 123 YBaCu oxide.
- 13. The method as defined in claim 10 wherein said step of heating comprises heating to a peritectic phase region, forming said crystals and growing said crystals.
- 14. The method as defined in claim 13 wherein said step of growing said crystals comprises slowly cooling said peritectic mixture.
- 15. The method as defined in claim 10 wherein said step of heating includes placing said precursor material in an inert crucible.
- 16. The method as defined in claim 10 wherein said inert crucible is selected from the group consisting of alumina, a noble metal and a compound having elements of said high temperature superconductor with a melting point higher than said temperature superconductor.
- 17. The method as defined in claim 10 further including the step of using adjusted compositions for said precursor material for forming different morphologies for said crystals.
- 18. The method as defined in claim 10 further including the step of adjusting crystal growing conditions for forming different morphologies for said crystals.
Government Interests
This invention was made with Government support under Contract No. W-31-109-ENG-38 awarded by the Department of Energy, and the U.S. Government has certain rights in this invention.
US Referenced Citations (9)
Non-Patent Literature Citations (1)
Entry |
Pellerin et al, "Nucleation and Growth Mechanisms of Textured YBaCuO and the Influence of Y.sub.2 BaCuO.sub.5 ", Physica C vol. 222 (1994) pp. 133-148. |