"Lateral Junction--Isolated Emitter Switched Thyrister", B. Joyant Baliga et al., IEEE EDL vol. 13, No. 12, Dec. 1992. |
"Investigation of . . . With a Buried Drain", Marius Orlowski, IEEE, 1992. |
"Snap-Back . . . " A. Ochoa et al. MOS-Controlled Thyristors . . . , Victor Temple, IE.sup.3 To Ed, ED-33. No. 10. Oct. 1986. |
"The Insulated Gate . . . Power Device", Baliga et al., IE.sup.3 TOED, vol. ED-31, No. 6 Jun. 1984. |
Orlowski, et al.; "Investigation of SOI-Like I-V Characteristics for a 64-Mb Dram SCC MOSFET with a Buried Drain", IEEE Trans. on Electron Devices; vol. 39, No. 7, pp. 1652-1660 (Jul. 1992). |
Ochoa, et al.; "Snap-Back:A Stable Regenerative Breakdown Mode of MOS Devices", Sandia Nat'l Lab., Contract No. DE-ACO4-76DP00789 (1983). |
Victor A. K. Temple; "MOS-Conrolled Thyristors-A New Class of Power Devices"; IEEE Trans. on Elecron Devices; vol. ED-33, No. 10, pp. 1609-1618 (1986). |
Baliga, et al.; "The Insulated Gate Transistor: A New Three-Terminal MOS Controlled Bipolar Power Device", IEEE Trans. on Electron Devices; vol. ED-31, No. 6, pp. 821-828 (1984). |