The invention is in the field of microcavity plasma devices, also known as microdischarge devices or microplasma devices.
Microcavity plasma devices produce a nonequilibrium, low temperature plasma within, and essentially confined to, a cavity having a characteristic dimension d below approximately 500 μm. This new class of plasma devices exhibits several properties that differ substantially from those of conventional, macroscopic plasma sources. Because of their small physical dimensions, microcavity plasmas normally operate at gas (or vapor) pressures considerably higher than those accessible to macroscopic devices. For example, microplasma devices with a cylindrical microcavity having a diameter of 200-300 μm (or less) are capable of operation at rare gas (as well as N2 and other gases tested to date) pressures up to and beyond one atmosphere.
Such high pressure operation is advantageous. An example advantage is that, at these higher pressures, the plasma chemistry favors the formation of several families of electronically-excited molecules, including the rare gas dimers (Xe2, Kr2, Ar2, . . . ) and the rare gas-halides (such as XeCl, ArF, and Kr2F) that are known to be efficient emitters of ultraviolet (UV), vacuum ultraviolet (VUV), and visible radiation. This characteristic, in combination with the ability of microplasma devices to operate in a wide range of gases or vapors (and combinations thereof), offers emission wavelengths extending over a broad spectral range. Furthermore, operation of the plasma in the vicinity of atmospheric pressure minimizes the pressure differential across the packaging material when a microplasma device or array is sealed.
Another unique feature of microplasma devices, the large power deposition into the plasma (typically tens of kW/cm3 or more), is partially responsible for the efficient production of atoms and molecules that are well-known optical emitters. Consequently, because of the properties of microplasma devices, including the high pressure operation mentioned above and their electron and gas temperatures, microplasmas are efficient sources of optical radiation.
Research by the present inventors and colleagues at the University of Illinois has resulted in new microcavity plasma device structures as well as applications. As an example, semiconductor fabrication processes have been adapted to produce large arrays of microplasma devices in silicon wafers with the microcavities having the form of an inverted pyramid. Arrays with 250,000 devices, each device having an emitting aperture of 50×50 μm2, have been demonstrated with a device packing density, array filling factor, and active area, of 104 cm−2, 25%, and 25 cm2, respectively. Other microplasma device structures have been fabricated in ceramic multilayer structures, photodefinable glass, and more recently, Al/Al2O3 sheets.
Microcavity plasma devices have also been developed over the past decade for a wide variety of applications. An exemplary application for an array of microplasmas is in the area of displays. Since single cylindrical microplasma devices, for example, with a characteristic dimension (d) as small as 10 μm have been demonstrated, devices or groups of devices offer a spatial resolution that is desirable for a pixel in a display. In addition, the efficiency for generating, with a microcavity plasma device, the ultraviolet light at the heart of the plasma display panel (PDP) can exceed that of the discharge structure currently used in plasma televisions.
Early microplasma devices were driven by direct current (DC) voltages and exhibited short lifetimes for several reasons, including sputtering damage to the metal electrodes. Improvements in device design and fabrication have extended lifetimes significantly, but minimizing the cost of materials and the manufacture of large arrays continue to be key considerations. Also, more recently-developed, dielectric barrier microplasma devices excited by a time-varying voltage are preferable when lifetime is of primary concern.
Research by the present inventors and colleagues at the University of Illinois has pioneered and advanced the state of microcavity plasma devices. This work has resulted in practical devices with one or more important features and structures. Most of these devices are able to operate continuously with power loadings of tens of kW-cm−3 to beyond 100 kW-cm−3. One such device that has been realized is a multi-segment linear array of microplasmas designed for pumping optical amplifiers and lasers. Also, the ability to interface a gas (or vapor) phase plasma with the electron-hole plasma in a semiconductor has been demonstrated. Fabrication processes developed largely by the semiconductor and microelectromechanical systems (MEMs) communities have been adopted for fabricating many of the microcavity plasma devices demonstrated to date. Use of silicon integrated circuit fabrication methods has further reduced the size and cost of microcavity plasma devices and arrays. Because of the batch nature of micromachining, not only are the performance characteristics of the devices improved, but the cost of fabricating large arrays is also reduced. The ability to fabricate large arrays with precise tolerances and high density makes these devices attractive for display applications.
This research by the present inventors and colleagues at the University of Illinois has resulted in exemplary practical devices. For example, semiconductor fabrication processes have been adopted to demonstrate densely packed arrays of microplasma devices exhibiting uniform emission characteristics. It has been demonstrated that such arrays can be used to excite phosphors in a manner analogous to plasma display panels, but with values of the luminous efficacy that are not presently achievable with conventional plasma display panels. Another important device is a microcavity plasma photodetector that exhibits high sensitivity.
The following U.S. patents and patent applications describe microcavity plasma devices resulting from these research efforts. Published Applications: 20050148270-Microdischarge devices and arrays; 20040160162-Microdischarge devices and arrays; 20040100194-Microdischarge photodetectors; 20030132693-Microdischarge devices and arrays having tapered microcavities; U.S. Pat. Nos. 6,867,548-Microdischarge devices and arrays; 6,828,730-Microdischarge photodetectors; 6,815,891-Method and apparatus for exciting a microdischarge; 6,695,664-Microdischarge devices and arrays; 6,563,257-Multilayer ceramic microdischarge device; 6,541,915-High pressure arc lamp assisted start up device and method; 6,194,833-Microdischarge lamp and array; 6,139,384-Microdischarge lamp formation process; and 6,016,027-Microdischarge lamp.
Additional exemplary microcavity plasma devices are disclosed in U.S. Published Patent Application 2005/0269953, entitled “Phase Locked Microdischarge Array and AC, RF, or Pulse Excited Microdischarge”; U.S. Published Patent Application no. 2006/0038490, entitled “Microplasma Devices Excited by Interdigitated Electrodes;” U.S. patent application Ser. No. 10/958,174, filed on Oct. 4, 2004, entitled “Microdischarge Devices with Encapsulated Electrodes,”; U.S. patent application Ser. No. 10/958,175, filed on Oct. 4, 2004, entitled “Metal/Dielectric Multilayer Microdischarge Devices and Arrays”; and U.S. patent application Ser. No. 11/042,228, entitled “AC-Excited Microcavity Discharge Device and Method.”
The development of microcavity plasma devices continues, with an emphasis on the display, lighting and biomedical applications markets. The ultimate utility of microcavity plasma devices in displays will hinge on several critical factors, including efficacy (discussed earlier), lifetime and addressability. Addressability, in particular, is vital in most display applications. For example, for a group of microcavity discharges to act as a pixel, each microplasma device must be individually addressable.
Manufacturing of large area, microcavity plasma device arrays benefits from structures and fabrication methods that reduce cost and increase reliability. Of particular interest in this regard are the electrical interconnections between devices in a large array. If the interconnect technology is difficult to implement or if the interconnect pattern is not easily reconfigurable, then manufacturing costs are increased and potential commercial applications may be restricted. Such considerations are of growing importance as the demand rises for displays or light-emitting panels of ever increasing area.
In a preferred method of formation embodiment, a metal foil or film is obtained or formed with microcavities (such as through holes). The foil or film is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity, and can be electrically isolated or connected.
Patterns of electrode interconnections buried in a metal oxide layer provided by the invention also have separate utility as wiring for an electronic device or system. An embodiment of the invention is wiring for an electronic device or system comprising a plurality of microcavities defined in a first metal oxide layer. Circumferential metal first electrodes are buried in the metal oxide layer, each electrode surrounding an individual microcavity. Interconnections buried in the first metal oxide layer connect two or more of the first electrodes. The interconnection of the first electrodes is according to a pattern.
In a preferred method of formation embodiment, a metal foil or film is obtained or formed with microcavities (such as through holes). The foil or film is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity, and can be electrically isolated or connected.
A preferred embodiment microcavity plasma device array of the invention includes a plurality of first metal circumferential electrodes that surround microcavities in the array in a plane(s) transverse to the microcavity axes. The first circumferential electrodes are buried in a metal oxide layer and surround the microcavities, while being protected from plasma in the microcavities by the metal oxide. In embodiments of the invention, some or all of the circumferential electrodes are connected. Patterns of connections can be defined. A second electrode(s) is arranged so as to be isolated from said first electrodes by the first metal oxide layer. In some embodiments, the second electrode(s) is in a second layer, and in other embodiments the second electrode(s) is carried on or within the first metal oxide layer. A containing layer, e.g., a thin glass or plastic layer, seals discharge medium into the microcavities.
A preferred embodiment microcavity plasma device array of the invention includes a plurality of first metal circumferential electrodes that surround microcavities in the device in plane(s) transverse to the microcavities. The first circumferential electrodes are buried in a metal oxide layer, while being protected from plasma in the microcavities by the metal oxide layer. In embodiments of the invention, some or all of the circumferential electrodes are connected. Connection patterns can be defined.
A second electrode(s) is arranged so as to be isolated from said first electrodes by said first metal oxide layer. In some embodiments, the second electrode(s) is in a second layer, and in other embodiments the second electrode(s) is carried on or within the first metal oxide layer. In a preferred embodiment, a second electrode or a plurality of second electrodes are buried in a second dielectric layer. The second dielectric layer is bonded to, or brought in close proximity to, the first layer and a containing layer seals gas or vapor (or a combination thereof) within the array. In another preferred embodiment, the second electrode is a plurality of electrodes within the first metal oxide layer.
The second layer can include, for example, a common electrode. The second layer can be a solid thin metal foil buried in or encapsulated by oxide to define a common second electrode. In other embodiments, the second layer can include an electrode pattern, with or without microcavities. Preferably, the second layer is formed similarly to the first layer with metal circumferential buried electrodes. Such an array provides low capacitance and high switching speed. Microplasma device arrays of the invention can be flexible, lightweight and inexpensive.
In a preferred method of formation embodiment, a metal foil or film is obtained or formed with microcavities (such as through holes). The foil or film is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity, and can be electrically isolated or connected.
A preferred embodiment microplasma device array of the invention has at least a subset of the microcavities interconnected. First metal circumferential electrodes are buried in a metal-oxide (dielectric) layer and at least some of the first metal circumferential electrodes are interconnected. Metal-oxide also lines the inside of each microcavity so as to protect the first metal circumferential electrodes from exposure to the plasma. A second electrode(s) is also buried in a second metal-oxide dielectric layer which is brought in close proximity to the first layer with the first electrode and the microcavity array. This second electrode can, for example, comprise parallel metal lines buried in dielectric, each of which is intended to be associated with a specific row or column of microcavities in the array. The second electrode can, alternatively, be a continuous sheet of metal buried in a dielectric. Microcavities may or may not be formed in the second electrode.
Microcavity devices and arrays are provided by embodiments of the invention in which planar circumferential metal electrodes, lying in a plane(s) transverse to a plurality of microcavities, provide power to and interconnections among the microcavities. Electrodes are buried in a dielectric, such as a metal oxide, and surround each microcavity. The shape of the electrode around the microcavity essentially replicates the cross-sectional geometry of the microcavity (circular, diamond, etc.). A thin wall of the dielectric lies between the electrode and the edge of the microcavity, thereby electrically insulating the electrode and providing chemical and physical isolation of the electrode from the plasma within the microcavity. That is, the electrode is not flush with the microcavity wall.
A preferred embodiment includes a plurality of first circumferential electrodes buried in a dielectric and some or all of these electrodes are connected. A second electrode is buried in a second dielectric layer. The second dielectric layer is bonded or otherwise brought in proximity to the first layer, forming an array of devices, and a containing layer seals gas or vapor (or a combination thereof) within the array. In embodiments of the invention, the electrodes associated with different microcavities can be interconnected in patterns that are controllable.
In a preferred method of formation, the patterning of electrode interconnections between microcavities occurs automatically during the course of wet chemical processing (anodization) of a metal electrode. Prior to processing, microcavities (such as through holes) of the desired shape are produced in a metal electrode (e.g., a foil or film). The electrode is subsequently anodized so as to convert virtually all of the electrode into a dielectric (normally an oxide). The anodization process and microcavity placement determines whether adjacent microcavities in an array are electrically connected or not.
Relative to previous microcavity plasma technologies, this invention has several advantages. One is that the capacitance of the two electrode structure is reduced because the first electrodes and interconnections, if any, (and, in some preferred embodiments, the second electrode as well) is not a continuous sheet as has been the case with most previous technology. Much of the metal sheet that, in former microplasma devices and arrays, would constitute one electrode, is converted in this invention into a metal oxide dielectric. Since the capacitance of a parallel plate capacitor is proportional to the electrode area, the reduction in electrode area similarly reduces the capacitance of the overall structure. The reduction in capacitance similarly reduces the displacement current of an array which renders this technology of value for display applications in which large displacement currents are generally a liability.
Another advantage of embodiments of the present invention is that the dielectric can be a material with a large bandgap and, hence, is transparent in the visible and, perhaps, in portions of the ultraviolet (UV) or infrared (IR) regions as well.
With preferred formation methods, the buried circumferential metal electrodes form as self-patterned electrodes. The self-patterned electrodes can provide for the delivery of electrical power to, and interconnections among, microcavity plasma devices. Circumferential electrodes are buried in a metal oxide dielectric and surround each microcavity. The shape of the circumferential electrode surrounding a microcavity essentially replicates the cross-sectional geometry of the microcavity (circular, diamond, etc.)—that is, the electrode shape essentially matches that of a cut-away view of the microcavity by a plane that is transverse to the microcavity axis. A thin wall of the metal oxide dielectric lies between the electrode and the edge of the microcavity, thereby electrically insulating the electrode and providing chemical and physical isolation of the electrode from the plasma within the microcavity. In embodiments of the invention, the electrodes associated with different microcavities can be interconnected in patterns that are controllable. In the preferred method of formation, the patterning of electrode interconnections between microcavities occurs automatically during the course of wet chemical processing (anodization) of a metal foil or film. Prior to processing, microcavities of the desired shape are produced in a metal foil or film. The foil or film is subsequently anodized to convert substantially all of the metal into a dielectric (normally an oxide). The anodization process and microcavity placement determine whether adjacent microcavities in an array are electrically connected or not.
A fabrication method of the invention is a wet chemical process in which self-patterned circumferential electrodes are automatically formed around microcavities during an anodization process that converts metal to metal oxide. The size and pitch of the microcavities in a metal foil (or film) prior to anodization, as well as the anodization parameters, determine which of the microcavity plasma devices in a one or two-dimensional array are connected. In a preferred embodiment, a metal foil is obtained or fabricated with microcavities having any of a broad range of cross-sections (circular, square, etc.). The foil is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and simultaneously buried in the metal oxide created by the anodization process. The electrodes form uniformly around the perimeter of each microcavity, and can be electrically isolated or connected in patterns. The shape of the electrodes that form around the microcavities is dependent upon the shape of the microcavities prior to anodization to create the metal oxide. Thus, for example, cylindrical microcavities produce buried ring-shaped electrodes and diamond-shaped microcavities produce essentially diamond-shaped buried electrodes. The electrode around each microcavity is, however, not flush with the microcavity wall. Rather, the electrode is covered by metal-oxide, a portion of which forms the wall of the microcavity.
Preferred embodiment fabrication methods are readily controlled by the parameters of the anodization process to, for example, connect groups of microcavities. Electrodes can be formed so as to ignite an entire group of microcavity plasma devices (such as a row or column of devices in a two dimensional array) or, if desired, a single device in an array. The formation of the self-patterned electrodes and the conversion of metal foil to metal oxide is accomplished entirely in an acid bath. One way to produce an array of devices is to join a thin oxide layer with patterned buried electrodes and microcavities to another thin oxide layer having a buried electrode(s). Fabrication methods of the invention are inexpensive and permit large sheets of material to be processed simultaneously. Addressable and nonaddressable arrays can be formed.
Devices of the invention are amenable to mass production techniques which may include, for example, roll to roll processing to bond together first and second thin layers with buried electrodes. Embodiments of the invention provide for large arrays of microcavity plasma devices that can be made inexpensively. Also, exemplary devices of the invention are formed from thin layers that are flexible and at least partially transparent in the visible region of the spectrum.
The structure of preferred embodiment microcavity plasma devices of the invention is based upon foils (or films) of metal that are available or can be produced in arbitrary lengths, such as on rolls. In a method of the invention, a pattern of microcavities is produced in a metal foil which is subsequently anodized, thereby resulting in microcavities in a metal-oxide (rather than the metal) with each microcavity surrounded (in a plane transverse to the microcavity axis) by a buried metal electrode. During device operation, the metal oxide protects the microcavity and electrically isolates the electrode from the plasma within the microcavity.
A second metal foil is also encapsulated with oxide and can be bonded to the first encapsulated foil. The second metal foil forms a second electrode(s). For one preferred embodiment microcavity plasma device array of the invention, no particular alignment is necessary during bonding of the two encapsulated foils. In another embodiment of the invention, the second electrode comprises an array of parallel metal lines buried in the metal-oxide. The entire array, comprising two metal-oxide layers with buried electrodes, can be sealed with thin glass, quartz, or even plastic windows, for example, with the desired gas or gas mixture sealed within.
Preferred materials for the metal electrodes and metal oxide are aluminum and aluminum oxide (Al/Al2O3). Another exemplary metal/metal oxide material system is titanium and titanium dioxide (Ti/TiO2). Other metal/metal oxide materials systems will be apparent to artisans. Preferred material systems permit the formation of microcavity plasma device arrays of the invention by inexpensive, mass production techniques such as roll to roll processing.
The shape (cross-section and depth) of the microcavity, as well as the identity of the gas or vapor in the microcavity, the applied voltage and the voltage waveform, determine the plasma configuration and the radiative efficiency of a microplasma, given a specific atomic or molecular emitter. The overall thickness of exemplary microplasma array structures of the invention can be, for example, 200 μm or less, making such arrays very flexible and inexpensive. Furthermore, the density of microcavity plasma devices (number per cm2 of array surface area) can exceed 104 cm−2, with filling factors (ratio of the array's radiating area to its overall area) beyond 50% attainable.
Embodiments of the invention provide independent addressing of individual microcavity plasma devices in an array. As noted earlier, in one embodiment the second electrode may comprise one or more arrays of parallel metal lines buried in metal oxide. The entire addressable array consists of two electrodes or electrode patterns, separately buried in metal oxide by anodization and subsequently bonded.
Patterns of electrode interconnections buried in a metal oxide layer provided by the invention also have separate utility as wiring for an electronic device or system. An embodiment of the invention is wiring for an electronic device or system comprising a plurality of microcavities defined in a first metal oxide layer. Circumferential metal first electrodes are buried in the metal oxide layer, each electrode surrounding an individual microcavity. Interconnections buried in the first metal oxide layer connect two or more of the first electrodes. The interconnection of the first electrodes is according to a pattern.
Preferred embodiments will now be discussed with respect to the drawings. The drawings include schematic figures that are not to scale, which will be fully understood by skilled artisans with reference to the accompanying description. Features may be exaggerated for purposes of illustration. From the preferred embodiments, artisans will recognize broader aspects of the invention.
A second electrode 18 in
The array 10 can be sealed by any suitable material, which can be completely transparent to emission wavelengths produced by the microplasmas or can, for example, filter the output wavelengths of the microcavity plasma device array 10 so as to transmit radiation only in specific spectral regions. The array 10 includes a transparent layer 20, such as a thin glass, quartz, or plastic layer. The discharge medium can be contained at or near atmospheric pressure, permitting the use of a very thin glass or plastic layer because of the small pressure differential across the sealing layer 20. Polymeric vacuum packaging, such as that used in the food industry to seal various food items, may also be used in which case the layer 20 will extend past the edge of 15 and would be sealed to another layer of the same material enclosing array 10 from the bottom. Artisans will appreciate that well-known vacuum and gas handling practices can be used to evacuate air from the sealed array and backfill the array with the desired gas, gases, vapor, or mixture thereof. A vacuum connection (not shown in
It is within each microcavity 12 that a plasma (discharge) will be produced. The first and second electrodes 16, 18 are spaced apart a distance from each other by the respective thicknesses of their oxide layers. The oxide thereby isolates the first and second electrodes 16, 18 from one another and, additionally, isolates each electrode from the discharge medium (plasma) contained in the microcavities 12. This arrangement permits the application of a time-varying (AC, RF, bipolar or pulsed DC, etc.) potential between the electrodes 16, 18 to excite the gaseous or vapor medium to create a microplasma in each microcavity 12.
Artisans will also appreciate that the first electrode 16, as seen in
In a preferred formation process of the invention, a metal foil having a pattern of microcavities (with the desired cross-sectional geometry) already present, is obtained. The microcavities may extend partially or completely through the metal foil (the latter is illustrated in
The next step is to convert much of the metal foil into metal oxide by an anodization process. This process is controlled so as to result in self-patterned first electrodes (see
The method of formation is suitable for large scale processing and is inexpensive. Buried, self-patterned electrodes are formed automatically by anodization, a wet chemical process. Consequently, the process is inexpensive and ideally suited for processing large areas. Producing electrodes for an array by thin film deposition techniques is comparatively expensive. Therefore, while minimizing the equivalent capacitance of a light-emitting array is important to its high-frequency electrical characteristics (such as switching), patterning the electrode by conventional deposition processes raises the cost of the array and the complexity of the fabrication process. With the formation method of the invention, the electrode area can be reduced dramatically without adding complexity to the fabrication process.
b shows a diagram of two microcavities and parameters related to the interconnection of buried metal electrodes between the microcavities. For the conditions shown in
Prototype arrays according to exemplary embodiments of the invention have been fabricated and tested. Specifically, linear arrays of microcavity plasma devices have been realized by anodizing in oxalic acid an aluminum foil into which a pattern of cylindrical microcavities (in the form of through holes) has previously been formed. For these exemplary arrays, the thickness of the Al foil is 127 μm, and the diameter and pitch (center-to-center spacing) of the circular holes are 250 μm and 200 μm, respectively. Anodizing the foil in a 0.3 M solution of oxalic acid at 25° C. for 7 hours converts most of the aluminum foil to a nanoporous form of aluminum oxide (Al2O3) but leaves behind a patterned, thin layer of Al that is buried in the Al2O3 (as shown in
The ring structure of the circumferential electrodes formed by this process, shown in cross-section in
The buried circumferential electrodes form automatically during the anodization process as a result of the flow of oxalic acid to the surface. The arrowhead cross-sectional shape of the metal electrodes that surround the microcavities 12 (see, e.g.,
In
Experiments have also demonstrated that self-patterned, buried electrodes can be formed to electrically connect arrays of microcavities. A portion of a linear Al/Al2O3 array of 250 μm dia. microcavities for which the devices are interconnected is shown in
An addressable microcavity plasma device array embodiment of the invention is illustrated schematically in
In
In other embodiments, the oxide 15/electrode 16 layer and second oxide layer 19 are kept sufficiently thin to permit the second electrodes 18 to be sufficiently close to the microcavities to reduce significantly the voltage levels required for exciting the plasma. Since the electrodes 18′ of
As seen in
Arrays of the invention have many applications. Addressable devices can be used as the basis for both large and small high definition displays, with one or more microcavity plasma devices forming individual pixels or sub-pixels in the display. Microcavity plasma devices in preferred embodiment arrays, as discussed above, can excite a phosphor to achieve full color displays over large areas. An application for a non-addressable or addressable array is, for example, as the light source (backlight unit) for a liquid crystal display panel. Embodiments of the invention provide a lightweight, thin and distributed source of light that is preferable to the current practice of using a fluorescent lamp as the backlight. Distributing the light from a localized lamp in a uniform manner over the entire liquid crystal display requires sophisticated optics. Non-addressable arrays provide a lightweight source of light that can also serve as a flat lamp for general lighting purposes. Arrays of the invention also have application, for example, in sensing and detection equipment, such as chromatography devices, and for phototherapeutic treatments (including photodynamic therapy). The latter include the treatment of psoriasis (which requires ultraviolet light at ˜308 nm), actinic keratosis and Bowen's disease or basal cell carcinoma. Inexpensive arrays sealed in glass or plastic now provide the opportunity for patients to be treated in a nonclinical setting (i.e., at home) and for disposal of the array following the completion of treatment. These arrays are also well-suited for photocuring of polymers which requires ultraviolet radiation, or as large area, thin light panels for applications in which low-level lighting is desired.
In addition to its application to interconnecting microplasma devices, the formation method of the invention is applicable to generalized wiring, and can be used for forming electrodes and interconnects for microelectronics and MEMs systems, arrays of capacitors, micro-cooling devices and systems, and printed circuit board (PCB) technologies.
While various embodiments of the present invention have been shown and described, it should be understood that other modifications, substitutions and alternatives are apparent to one of ordinary skill in the art. Such modifications, substitutions and alternatives can be made without departing from the spirit and scope of the invention, which should be determined from the appended claims.
Various features of the invention are set forth in the following claims.
This application claims priority under 35 U.S.C §120 from and is a divisional application of co-pending application Ser. No. 11/880,698, which was filed Jul. 24, 2007, and which claims priority under 35 U.S.C. §119 from provisional application Ser. No. 60/833,405 filed Jul. 26, 2006.
This invention was made with Government assistance under U.S. Air. Force Office of Scientific Research grant No. F49620-03-1-0391. The Government has certain rights in this invention.
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20110275272 A1 | Nov 2011 | US |
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Parent | 11880698 | Jul 2007 | US |
Child | 13188712 | US |