Claims
- 1. A method for making a semiconductor device from a wafer including a silicon .[.epitaxial surface.]. layer, said method comprising the steps of heating the wafer in an oxidizing atmosphere for a time and at a temperature for forming a first SiO.sub.2 overlay, forming a first layer of doped polysilicon over said SiO.sub.2 layer, .[.depositing.]. .Iadd.forming .Iaddend.on said polysilicon layer .Iadd.in a sintering step .Iaddend.a second layer of a .[.material.]. .Iadd.silicide .Iaddend.selected from the group consisting of .[.Ti and Ta sintering the material of said second layer at a temperature and for a time to form a silicide.]. TiSi.sub.2 and TaSi.sub.2 .[.of the material, respectively,.]. .Iadd.in a manner to avoid the formation of an oxide layer thereover, .Iaddend.heating the wafer for a time and at a temperature to form a second SiO.sub.2 overlay while leaving a layer of polysilicon in excess of 1000 Angstroms therebeneath, etching a pattern in said second SiO.sub.2 overlay, depositing an electrically-conducting material over said second SiO.sub.2 overlay, and etching a pattern in said electrically-conducting material.
- 2. A method in accordance with claim 1 in which said second layer comprises Ti and is sintered at about 900 degrees C. and heated in an oxygen atmosphere.
- 3. A method in accordance with claim 1 in which said second layer comprises Ta and is sintered at at least about 1000 degrees C. and is heated in steam.
Parent Case Info
This application is a .Iadd.Reissue of Ser. No. 227,133 filed Jan. 22, 1981, now U.S. Pat. No. 4,332,839 which was a .Iaddend.division of application Ser. No. 974,378, filed Dec. 24, 1978, now U.S. Pat. No. 4,276,557.
US Referenced Citations (4)
Non-Patent Literature Citations (2)
Entry |
Holland, "Vacuum Deposition of Thin Films", John Wiley & Sons Inc., p. 462, .COPYRGT.1956. |
Sinha et al, "Generic Reliability of the High-Conductivity TaSi.sub.2 /n+ Poly-Si Gate MOS Structure" 18th Annual Proceedings Reliability Physics 1980, Las Vegas, Nevada, Apr. 8-10, 1980. |
Divisions (1)
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Number |
Date |
Country |
Parent |
974378 |
Dec 1978 |
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Reissues (1)
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Number |
Date |
Country |
Parent |
227133 |
Jan 1981 |
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