Claims
- 1. A method for manufacturing a surface acoustic wave device, comprising the steps of:
- (a) preparing a substrate essentially made of at least one of diamond, sapphire and boron nitride;
- (b) irradiating a raw material gas consisting essentially of an organo-metallic compound containing aluminum with a focused ion beam to form an aluminum film on a surface of said substrate, said aluminum film an interdigital electrode having a line and spacing width of about 0.1 to 0.5 .mu.m; and
- (c) forming a piezoelectric body in close contact with said interdigital electrode on said surface of said substrate.
- 2. The method of claim 1, wherein said organo-metallic compound is trimethylaluminum.
- 3. The method of claim 1, wherein said focused ion beam includes ions selected from the group consisting of Ar, Ga, He and AU.
- 4. A method for manufacturing a surface acoustic wave device, comprising the steps of:
- (a) preparing a thin film essentially made of at least one member selected from the group consisting of diamond, diamond-like carbon film, sapphire and boron nitride on a substrate;
- (b) irradiating a raw material gas consisting essentially of an organo-metallic compound containing aluminum with a focused ion beam to form an aluminum film on a surface of said thin film, said aluminum film forming an interdigital electrode having a line and spacing of about 0.1 to 0.5 .mu.m; and
- (c) forming a piezoelectric body in close contact with said interdigital electrode on said surface of said thin film.
- 5. The method of claim 4, wherein said organo-metallic compound is trimethylaluminum.
- 6. The method of claim 4, wherein said focused ion beam includes ions selected from the group consisting of Ar, Ga, He and Au.
- 7. A method for manufacturing a surface acoustic wave device, comprising the steps of:
- (a) preparing a thin film essentially made of diamond on a substrate essentially made of silicon;
- (b) irradiating a raw material gas consisting essentially of an organo-metallic compound containing aluminum with a focused ion beam to form an aluminum film on a surface of said thin film, said aluminum film forming an interdigital electrode having a line and spacing width of about 0.1 to 0.5 .mu.m; and
- (c) forming a piezoelectric body in close contact with said interdigital electrode on said surface of said thin film.
- 8. The method of claim 7, wherein said focused ion beam includes ions selected from the group consisting of Art Ga, Me and Au.
- 9. A method for manufacturing a surface acoustic wave device, comprising the steps of:
- (a) preparing a substrate essentially made of at least one of diamond, sapphire and boron nitride;
- (b) forming a piezoelectric body on a surface of said substrate; and
- (c) irradiating a raw material gas consisting essentially of an organo-metallic compound containing aluminum with a focused ion beam to form an aluminum film on a surface of said piezoelectric body, said aluminum film forming an interdigital electrode having a line and spacing width of about 0.1 to 0.5 .mu.m.
Priority Claims (1)
Number |
Date |
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Kind |
3-245644 |
Sep 1991 |
JPX |
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Parent Case Info
This application is a divisional of application Ser. No. 07/946,184, filed on Sept. 16, 1992, now abandoned.
US Referenced Citations (10)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0407163 |
Jan 1991 |
EPX |
56-169771 |
Apr 1982 |
JPX |
64-62911 |
Mar 1989 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Blauner et al, "Focused ion beam fabrication of submicron gold structures", J. Vac. Sci. Technol. B7(4) Jul/Aug. 1989, pp. 609-617. |
Dubner et al, "The role of the ion -solid interaction in ion-beam-induced deposition of gold", J. Appl. Phys. 70(2) Jul. 1991, pp. 665-673. |
Divisions (1)
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Number |
Date |
Country |
Parent |
946184 |
Sep 1992 |
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