Claims
- 1. A method for manufacturing an electrostatic actuator comprising a vibrating plate, an electrode plate facing said vibrating plate, and a vibrating chamber formed between said electrode plate and said vibrating plate, wherein said vibrating plate is displaced by electrostatic force, by applying voltage between said vibrating plate and said electrode plate, said method comprising:
a process for forming a pressure compensating chamber communicating with said vibrating chamber; a process for forming a displacement plate at a portion of said pressure compensating chamber, displaceable according to external atmospheric pressure, into a warped form curved so as to protrude in a direction away from the facing inner wall of said pressure compensating chamber; and a process for shutting off and sealing said pressure compensating chamber from the external atmosphere, along with said vibrating chamber.
- 2. A method for manufacturing an electrostatic actuator according to claim 1, wherein said displacement plate is formed of a boron-doped layer formed by doping said semiconductor substrate.
- 3. A method for manufacturing an electrostatic actuator according to claim 1, further comprising a process for adjusting air pressure for sealing said pressure compensating chamber.
- 4. A method of manufacturing an electrostatic actuator comprising a vibrating plate, an electrode plate facing said vibrating plate, and a vibrating chamber formed between said electrode plate and said vibrating plate, wherein said vibrating plate is displaced through electrostatic force resulting from application of voltage across said vibrating plate and said electrode plate, said method comprising:
forming a pressure compensating chamber in communication with said vibrating chamber; forming a curved displacement plate as part of said pressure compensating chamber such that said displacement plate protrudes in a direction away from a facing inner wall of said pressure compensating chamber, said displacement plate being displaceable according to external atmospheric pressure; and shutting off and sealing said pressure compensating chamber and said vibrating chamber from external atmosphere.
- 5. A method of manufacturing an electrostatic actuator according to claim 4, comprising doping a semiconductor substrate with boron to form said displacement plate as a boron-doped layer of said semiconductor substrate.
- 6. A method of manufacturing an electrostatic actuator according to claim 4 comprising adjusting the air pressure in said pressure compensating chamber prior to said step of sealing.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-69105 |
Mar 1998 |
JP |
|
CONTINUING APPLICATION DATA
[0001] This application is a divisional of application Ser. No. 09/424,163, filed Feb. 29, 2000, the contents of which are incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09424163 |
Feb 2000 |
US |
Child |
10215229 |
Aug 2002 |
US |