Due to the arrangement of a (multiple) layer system consisting alternately of absorbing (e.g. SiOx) and transparent (e.g. SiO2) layers of suitable thickness, a further possibility exists for producing a multi-level profiled optical component in which the application wavelength is independent of the machining wavelength. If, for ablation purposes, a fluence is set at which in each case one such double layer is ablated using front-side ablation, it is possible to produce a 2n-level element using n exposures, where one exposure may consist of one or more laser pulses per irradiation position.
Further details of the invention may be derived from the following detailed description and the attached drawing, in which a preferred exemplary embodiment of the invention is depicted.
A method for manufacturing an optical component 6 is based substantially on carrying out several times a machining cycle consisting of a deposition step in which an absorption layer is deposited, and also consisting of a structure-forming laser ablation step, said method being also based on a material transformation step in which the component 6 is transformed into a final state that is transparent to the laser radiation.
The method is explained using the example of a four-level diffractive phase element (DPE) for UV wavelengths. The way in which it works is based on the diffraction of light at a finely structured surface relief in an optical material. Through diffraction and interference of an incident electromagnetic wave, for example of a laser beam, on the DPE it is possible to bring about a desired intensity distribution in a so-called signal plane. In the case of DPEs, only the phase of the light wave is modulated, i.e. they accept practically all transmittive elements (on the other hand, diffractive amplitude elements (DAE) modulate the amplitude of the incident light wave, i.e. they are always associated with losses). For example, in this way, the beam profile of an excimer laser can be shaped and homogenized for a subsequent application. The necessary surface relief is calculated beforehand using an in principle known calculation algorithm, for example a computer-generated hologram. The total depth of the structure is given by the equation D=(q−1)/q×λ/(n−1), where q is the number of levels, i.e. q−1 is the number of steps, λ is the wavelength at which the DPE is intended to fulfill its optical function, and n is the diffractive index of the material of the DPE in air. For a four-level element for an application wavelength of, for example, 193 nm, the total structural depth is thus 258 nm at a diffractive index of n=1.561 and a respective step height of 86 nm.
On a substrate 1, advantageously formed as a quartz body, a first absorption layer 2 is applied by means of vapour deposition using a suitable, in principle known apparatus. Via a first (calculated) mask (not shown) the absorption layer 2 is then ablated down to the height of the substrate at the irradiated positions using laser radiation 7 (
If, instead of multiple ablation and deposition of an absorption layer, a solid body is machined, or the entire layer thickness is not removed, the pulse energy density and the pulse count of the laser are used to obtain defined step depths or a quasi continuous profile in the absorbing material. It is important here to set the above parameters and also the beam profile (laser beam characteristics) very accurately, possibly with the help of upstream optical elements, in order to achieve a high degree of accuracy, because there is no longer any (helpful) “preset breaking point” between the substrate and the absorption layer.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2004-015-142.3 | Mar 2004 | DE | national |
This application is a national stage of PCT/EP2005/003134 filed on Mar. 24, 2005 and based upon application Ser. No. 10 2004 015 142.3 filed Mar. 27, 2004 under the International Convention.
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/EP05/03134 | 3/24/2005 | WO | 00 | 7/2/2007 |