Claims
- 1. A method for manufacturing a semiconductor device, comprising:
forming a buried layer of a semiconductor substrate; forming an active region adjacent at least a portion of the buried layer; removing at least part of the active region to form a shallow trench opening; forming a dielectric layer proximate the active region at least partially within the shallow trench opening; and removing at least part of the dielectric layer to form a collector contact region.
- 2. The method of claim 1, further comprising forming a collector contact at the collector contact region, the collector contact operable to electrically contact the buried layer.
- 3. The method of claim 1, wherein the collector contact region has a depth of approximately 3,000 to 10,000 angstroms.
- 4. The method of claim 1, wherein removing at least part of the dielectric layer comprises:
masking a first portion of the dielectric layer; and etching a second portion of the dielectric layer to form a collector contact region.
- 5. The method of claim 1, wherein removing at least part of the dielectric layer comprises forming a shallow trench isolation structure adjacent at least a portion of the active region.
- 6. The method of claim 1, further comprising forming a first isolation structure adjacent at least a portion of the buried layer.
- 7. The method of claim 6, wherein the first isolation structure comprises a deep trench isolation structure.
- 8. The method of claim 7, wherein the deep trench isolation structure comprises a liner oxide.
- 9. The method of claim 1, wherein removing at least part of the dielectric layer comprises forming a shallow trench isolation spacer adjacent at least a portion of the active region.
- 10. The method of claim 1, further comprising forming an oxide layer adjacent at least a portion of the buried layer.
- 11. The method of claim 1, further comprising forming an emitter contact of the semiconductor device proximate the active region.
- 12. A semiconductor device, comprising:
a buried layer of a semiconductor substrate; an active region adjacent at least a portion of the buried layer; a shallow trench isolation structure adjacent at least a portion of the active region; a collector contact region adjacent at least a portion of the shallow trench isolation structure; wherein the collector contact region has a depth approximately equal to a depth of the shallow trench isolation structure.
- 13. The semiconductor device of claim 12, further comprising a collector contact formed at the collector contact region, the collector contact operable to electrically contact the buried layer.
- 14. The semiconductor device of claim 12, wherein the depth of the collector contact region is approximately 3,000 to 10,000 angstroms.
- 15. The semiconductor device of claim 12, further comprising a first isolation structure adjacent at least a portion of the buried layer.
- 16. The semiconductor device of claim 15, wherein the first isolation structure comprises a deep trench isolation structure.
- 17. The semiconductor device of claim 16, wherein the deep trench isolation structure comprises a liner oxide.
- 18. The semiconductor device of claim 12, wherein the shallow trench isolation structure comprises a shallow trench isolation spacer.
- 19. The semiconductor device of claim 12, further comprising an oxide layer adjacent at least a portion of the buried layer.
- 20. The semiconductor device of claim 12, further comprising an emitter contact proximate the active region.
RELATED APPLICATIONS
[0001] This application is related to Application Serial Number ______, entitled “Method for Manufacturing and Structure of Semiconductor Device with Sinker Contact Region,” filed on Oct. 1, 2001.
Provisional Applications (1)
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Number |
Date |
Country |
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60326594 |
Oct 2001 |
US |