Claims
- 1. A method for manufacturing a semiconductor device, comprising:
forming a buried layer of a semiconductor substrate; forming an active region adjacent at least a portion of the buried layer; forming a base layer adjacent at least a portion of the active region; forming a dielectric layer adjacent at least a portion of the base layer; removing at least part of the dielectric layer at an emitter contact location and at a sinker contact location; forming an emitter structure at the emitter contact location; and wherein forming the emitter structure comprises etching the semiconductor device at the sinker contact location to form a sinker contact region, the sinker contact region having a first depth.
- 2. The method of claim 1, further comprising:
forming a gate structure; wherein forming the gate structure comprises etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
- 3. The method of claim 1, further comprising forming a collector contact at the sinker contact region, the collector contact operable to electrically contact the buried layer.
- 4. The method of claim 1, wherein the first depth is approximately 0.1 to 0.2 microns.
- 5. The method of claim 1, further comprising forming an oxide layer adjacent at least a portion of the buried layer.
- 6. The method of claim 2, wherein the second depth is approximately 0.3 to 0.6 microns.
- 7. The method of claim 2, further comprising forming a collector contact at the sinker contact region, the collector contact operable to electrically contact the buried layer.
- 8. The method of claim 1, further comprising forming a first isolation structure adjacent at least a portion of the buried layer.
- 9. The method of claim 8, further comprising forming a second isolation structure adjacent at least a portion of the active region.
- 10. The method of claim 8, wherein the first isolation structure comprises a deep trench.
- 11. The method of claim 8, further comprising forming a liner oxide adjacent at least a portion of the first isolation structure.
- 12. The method of claim 9, wherein the second isolation structure comprises a shallow trench.
- 13. A semiconductor device, comprising:
a buried layer of a semiconductor substrate; an active region adjacent at least a portion of the buried layer; a base layer adjacent at least a portion of the active region; a dielectric portion adjacent at least a portion of the base layer; an emitter structure adjacent at least a portion of the base layer; a sinker contact region of the semiconductor substrate, the sinker contact region formed adjacent at least a portion of the active region when the emitter structure is formed; and wherein the sinker contact region has a depth.
- 14. The semiconductor device of claim 13, wherein the depth is approximately 0.1 to 0.2 microns.
- 15. The semiconductor device of claim 13, wherein the depth is approximately 0.3 to 0.6 microns.
- 16. The semiconductor device of claim 13, further comprising a collector contact formed at the sinker contact region, the collector contact operable to electrically contact the buried layer.
- 17. The semiconductor device of claim 13, further comprising an oxide layer adjacent at least a portion of the buried layer.
- 18. The semiconductor device of claim 13, further comprising a first isolation structure adjacent at least a portion of the buried layer.
- 19. The semiconductor device of claim 18, further comprising a second isolation structure adjacent at least a portion of the active region.
- 20. The method of claim 18, wherein the first isolation structure comprises a deep trench.
- 21. The method of claim 18, further comprising a liner oxide adjacent at least a portion of the first isolation structure.
- 22. The method of claim 19, wherein the second isolation structure comprises a shallow trench.
RELATED APPLICATIONS
[0001] This application is related to application Ser. No. ______, entitled “Method for Manufacturing and Structure of Semiconductor Device with Shallow Trench Collector Contact Region,” filed on Oct. 1, 2001.
Provisional Applications (1)
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Number |
Date |
Country |
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60326475 |
Oct 2001 |
US |