1. Technical Field
The present disclosure relates to solid state light emitting devices and, more particularly, to a method for manufacturing light emitting diodes (LEDs) wherein there is no electrode which may hinder light radiation from a top of the LED formed on the top of the LED.
2. Description of Related Art
In recent years, LEDs have been widely used in devices to provide illumination. Typically, an LED may include an LED die, an electrode layer, and two gold wires. The LED die may include a light emitting surface. Two spaced terminals may be formed on the light emitting surface. The LED die may be electrically connected to the electrode layer through wire bonding, in which the two gold wires may be respectively soldered to the terminals and the electrode layer by solder. However, part of the light emitting surface of the LED die may be blocked by the solder and the gold wires, resulting in a decreased illumination efficiency of the LED.
What is needed, therefore, is an LED to overcome the described disadvantages.
Referring to
The base 11 is electrically insulated and has a size larger than the LED chip 12. An outer surface of the base 11 is coated with a layer of electrically conductive material. A continuous gap 113 is defined in the electrically conductive material to divide the electrically conductive material into two separate parts: a first electrode part 111 and a second electrode part 112. The base 11 has good heat dissipation efficiency and absorbs heat generated from the LED chip 12 to prevent the LED chip 12 from overheating.
Referring also to
The electrode layer 14 has a size smaller than that of the base 11 and is formed on a central portion of a top of the base 11. A through hole 144 is defined in the electrode layer 14 and aligned with the continuous gap 113 of the base 11. In the present embodiment, the through hole 144 is located at a left side of the LED die 15, and has a width smaller than a width of the continuous gap 113 of the base 11. The through hole 144 is coaxial with the continuous gap 113. An electrically insulating material 143 is filled in the through hole 144. The through hole 144 divides the electrode layer 14 into two separate sections: a first section 141 and a second section 142. The insulating material 143 is between the first section 141 and the second section 142 to insulate the first section 141 from the second section 142. The first section 141 and the second section 142 are electrically connected to the first electrode part 111 and the second electrode part 112, respectively.
The LED die 15 includes an electrically insulating substrate 151, an N-doped region formed on the electrically insulating substrate 151, an active layer 154 formed on the N-doped region, and a P-doped region formed on the active layer 154. In this embodiment, the P-doped region is a P-type gallium nitrogen layer 157. The N-doped region is an N-type gallium nitrogen layer 153. The electrically insulating substrate 151, the N-type gallium nitrogen layer 153, the active layer 154 and the P-type gallium nitrogen layer 157 are stacked one on the other along a vertical direction of the LED 10. The N-type gallium nitrogen layer 153, the active layer 154, and the P-type gallium nitrogen layer 157 cooperatively construct a P-N junction.
The electrically conductive layer 18 has a size equal to that of the LED die 15 and is located on the second section 142 of the electrode layer 14, and is electrically connected to the second section 142. A through hole 1511 is defined in the electrically insulating substrate 151. An electrically conductive pole 181 protrudes from the electrically conductive layer 18. The electrically conductive layer 18 is coated on the electrically insulating substrate 151, and the electrically conductive pole 181 extends through the through hole 1511. The electrically conductive layer 18 is electrically connected to the N-type gallium nitrogen layer 153 through the electrically conductive pole 181.
The electrically insulating layer 16 is transparent and made of silicon dioxide or silicon nitride. In the present embodiment, the electrically insulating layer 16 completely covers lateral sides of the LED die 15 and the electrically conductive layer 18, and partially covers a periphery of a top side of the LED die 15 with a through hole 161 defined above a central portion of a top of the P-type gallium nitrogen layer 157. The electrically insulating layer 16 also covers part of top surfaces of the first and second sections 141, 142 near the LED die 15. The electrically insulating layer 16 covers the through hole 144 of the electrode layer 14.
The transparent electrically conducting layer 17 electrically connects the P-type gallium nitrogen layer 157 and the first section 141 of the electrode layer 14. The transparent electrically conducting layer 17 is made of transparent alloys, such as indium tin oxide, or carbon nanotube film. The transparent electrically conducting layer 17 comprises a first covering portion 171 on the top side of the LED die 15, a second covering portion 173 on the first section 141, and a connecting portion 172 interconnecting the first covering portion 171 and the second covering portion 173 and on a lateral side of a left part of the electrically insulating layer 16.
The first covering portion 171 fills the through hole 161 to connect the central portion of the P-type gallium nitrogen layer 157 of the LED die 15. The second covering portion 173 is arranged on the first section 141. The electrically insulating layer 16 is located between the electrically conducting layer 17 and the LED die 15 to electrically insulate the electrically conducting layer 17 from the LED die 15 except the central portion of the top of the P-type gallium nitrogen layer 157.
The packaging layer 13 is made of transparent, electrically insulating materials, such as silicone, epoxy, quartz, or glass. The packaging layer 13 encapsulates the LED chip 12 therein and is formed on the base 11.
In the present disclosure, because the transparent electrically conducting layer 17 and the electrically insulating layer 16 are transparent, and coated directly on the LED die 15, light emitted from the active layer 154 may not be blocked by any element of the LED 10. Therefore, light emitting efficiency of the LED 10 may be improved in comparison with the conventional LED.
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It is to be understood, however, that even though numerous characteristics and advantages of the embodiments have been set forth in the foregoing description, together with details of the structures and functions of the embodiments, the disclosure is illustrative only, and changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the disclosure to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
Number | Date | Country | Kind |
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2011 1 0005426 | Jan 2011 | CN | national |
This patent application is a divisional application of patent application Ser. No. 13/300,731, filed on Nov. 21, 2011, entitled “LIGHT EMITTING DIODES AND METHOD FOR MANUFACTURING THE SAME,” which is assigned to the same assignee as the present application, and which is based on and claims priority from Chinese Patent Application No. 201110005426.2 filed in China on Jan. 10, 2011. The disclosures of patent application Ser. No. 13/300,731 and the Chinese Patent Application are incorporated herein by reference in their entirety.
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Number | Date | Country | |
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Parent | 13300731 | Nov 2011 | US |
Child | 14133469 | US |