Claims
- 1. A method for forming an oxide superconducting material comprising the steps of:
- introducing a raw material for forming an oxide superconducting material into a platinum crucible:
- heating said raw material to a melting temperature thereof so that the raw material is transformed into a molten state;
- placing a seed crystal in said melted raw material;
- pulling said seed crystal so that crystals of said oxide material grown thereon; and
- supplying oxygen to said crucible to form the oxide superconducting material.
- 2. A method for forming an oxide superconducting material comprising the steps of:
- introducing a raw material for forming an oxide superconducting material into a platinum crucible;
- heating said raw material to a melting temperature thereof so that the raw material is transformed into a molten state;
- placing a seed crystal in said melted raw material;
- pulling said seed crystal so that crystals of said oxide material grown thereon; and
- inducing and rotating a magnetic field within said crucible.
- 3. The method of claim 2 wherein the magnetic field inducing and rotating step varies the direction of said magnetic field in a plane perpendicular to an axis of said rotation.
- 4. A method for forming an oxide superconducting material comprising the steps of:
- introducing a raw material for forming an oxide superconducting material in a platinum crucible;
- heating said raw material to a melting temperature thereof so that the raw material is transformed into a molten state; and
- gradually cooling said melted raw material to form a superconducting oxide crystal.
Priority Claims (1)
Number |
Date |
Country |
Kind |
63-236961 |
Sep 1987 |
JPX |
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Parent Case Info
This application is a divisional of Ser. No. 08/035,497, filed Mar. 22, 1993, now abandoned; which itself is a continuation of Ser. No. 07/541,393, filed Jun. 21, 1990, abandoned; which itself is a divisional of Ser. No. 06/246,785 filed Sep. 20, 1988, now U.S. Pat. No. 4,956,339.
US Referenced Citations (11)
Foreign Referenced Citations (6)
Number |
Date |
Country |
0263310 |
Dec 1988 |
DEX |
0081086 |
Feb 1985 |
JPX |
0033293 |
Feb 1985 |
JPX |
3095195 |
Apr 1988 |
JPX |
1083591 |
Mar 1989 |
JPX |
0993880 |
Jun 1965 |
NLX |
Non-Patent Literature Citations (2)
Entry |
"Single Crystal Growth of (La.sub.y-x A.sub.x).sub.2 CuO.sub.4 (A=Ba or Sr) And (Ba.sub.2 YCu.sub.3 O.sub.7-y ", Hidaka et al., Journal of Crystal Growth. 85 (1987) pp. 581-584. |
"Low Oxygen Content Czochralski Silicon Crystal Growth", Hoshikawa et al.; vol. 19, No. 1, Jan. 1, 1980; Japanese J. Applied Physics. |
Divisions (2)
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Number |
Date |
Country |
Parent |
35497 |
Mar 1993 |
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Parent |
246785 |
Sep 1988 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
541393 |
Jun 1990 |
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