METHOD FOR OPERATING A METAL DROP EJECTING THREE-DIMENSIONAL (3D) OBJECT PRINTER TO FORM ELECTRICAL CIRCUITS ON SUBSTRATES

Abstract

A method of operating a three-dimensional (3D) metal object manufacturing apparatus selects operational parameters for operation of the printer to form conductive metal traces on substrates with dimensions within appropriate tolerances and with sufficient conductive material to carry electrical currents without burning up or becoming too hot. The method identifies the material of the substrate and the bulk metal being melted for ejection and uses this identification data to select the operational parameters. Thus, the method can form conductive traces and circuits on a wide range of substrate materials including polymeric substrates, semiconductor materials, oxide layers on semiconductor materials, glass, and other crystalline materials.

Description

Claims

1. A method of operating a metal drop ejecting apparatus comprising: using model data or user input data to identify a bulk metal material melted within a chamber of the metal drop ejecting apparatus;using the model data or the user input data to identify a substrate onto which at least one ejector of the chamber of the metal drop ejecting apparatus ejects melted bulk metal drops from the chamber;operating a printhead at a predetermined temperature corresponding to the identification of the bulk metal and the identification of the substrate to melt the identified bulk metal within the printhead;operating the at least one ejector at a predetermined ejection frequency and a predetermined overlap percentage corresponding to the identification of the bulk metal and the identification of the substrate;operating at least one actuator to move a platform and the at least one ejector relative to one another to provide one of a plurality of predetermined drop spacings for melted bulk metal drops ejected from the at least one ejector onto the identified substrate, the provided predetermined drop spacing corresponding to the identification of the bulk metal and the identification of the substrate, the predetermined drop spacing corresponding to a 0% percentage of overlap, and a separation between adjacent ejected melted bulk metal drops is equal to or greater than one diameter of an ejected melted bulk metal drop; andoperating the at least one ejector to eject at least one melted bulk metal drop on each of the previously ejected separated bulk metal drops with an overlap percentage of 100% before operating the at least one ejector to eject melted bulk metal drops that freeze to at least one of the separated bulk metal drops after the ejected melted bulk metal drops reach the substrate to connect the separated bulk metal drops and form metal traces on the identified substrate.

2. The method of claim 1 wherein the predetermined ejection frequency is within a range of 50 Hz to 110 Hz and the predetermined overlap percentage is within a range of 30% overlap to 70% overlap to produce a uniform solid metal line when the identified bulk metal is aluminum and the identified substrate is polyimide.

3. The method of claim 1 wherein the predetermined temperature is at least 900° C. when the identified bulk metal is aluminum and the identified substrate is a semiconductor wafer or an oxide layer on a semiconductor wafer.

4. The method of claim 1, the operation of the at least one ejector to eject melted bulk metal drops that connect the separated bulk metal drops further comprises: ejecting the melted bulk metal drops that freeze to at least one of the separated metal drops so the ejected bulk metal drops freeze before they reach the substrate.

5. The method of claim 1 further comprising: operating the at least one ejector to eject successive melted bulk metal drops with an overlap percentage of at least 70% overlap to raise a portion of one of the metal traces above the identified substrate and extend the portion of the one metal trace in a predetermined direction.

6. The method of claim 5 further comprising: operating the at lest one ejector to raise the portion of the one metal trace to a position where the raised portion avoids another one of the metal traces on the identified substrate.

7. The method of claim 5 further comprising: operating the at least one ejector to eject melted bulk metal drops to connect raised portions of at least two separate metal traces to form a portion of one of the metal traces that is above a surface of the identified substrate.

8. The method of claim 5 further comprising: operating the at least one ejector to eject melted bulk metal drops to connect the raised portion of the one metal trace to an electronic component lead on the identified substrate.

9. The method of claim 1 further comprising: operating the at least one ejector to eject melted bulk metal drops to form a first layer for a single trace in a single pass; andoperating the at least one ejector to eject melted bulk metal drops to form a second layer of the single trace so the single trace is taller than the first layer or the second layer separately.

10. The method of claim 9 further comprising: operating the at least one ejector to eject melted bulk metal drops at a same spacing to form the first layer and the second layer of the taller single trace with a uniform cross-section.

11. A method of operating a metal drop ejecting apparatus comprising: using model data or user input data to identify a bulk metal material to be received and melted by a printhead in the metal drop ejecting apparatus;using the model data or the user input data to identify a substrate onto which at least one ejector of the printhead ejects melted bulk metal drops;using the identification of the bulk metal material and the identification of the substrate to identify operational parameters for operating the metal drop ejecting apparatus; andoperating the at least one ejector, at least one actuator, and the printhead using the identified operational parameters to form metal traces on the identified substrate.

12. The method of claim 11 further comprising: operating the at least one ejector at a predetermined ejection frequency and a predetermined overlap percentage corresponding to the identified substrate and the identified bulk metal to form the metal traces on the identified substrate.

13. The method of claim 12 wherein the predetermined ejection frequency is a range of 50 Hz to 110 Hz and the predetermined overlap percentage is 30% overlap to 70% overlap.

14. The method of claim 13 further comprising: operating the printhead at a predetermined temperature that corresponds to the identified bulk metal and the identified substrate.

15. The method of claim 13 wherein the identification of the bulk metal is aluminum and the identification of the substrate is a semiconductor wafer or an oxide layer on a semiconductor wafer.

16. The method of claim 13 wherein the predetermined temperature is at least 900° C. and the identified substrate is polyimide.

17. The method of claim 11 further comprising: operating the at least one ejector to eject successive melted bulk metal drops with an overlap percentage of at least 70% overlap to raise a portion of one of the metal traces above the identified substrate and extend the portion of the one metal trace in a predetermined direction.

18. The method of claim 17 further comprising: operating the at lest one ejector to raise the portion of the one metal trace to a position where the raised portion avoids another one of the metal traces on the identified substrate.

19. The method of claim 17 further comprising: operating the at least one ejector to eject melted bulk metal drops to connect raised portions of at least two separate metal traces to form a portion of one of the metal traces that is above a surface of the identified substrate.

20. The method of claim 17 further comprising: operating the at least one ejector to eject melted bulk metal drops to connect the raised portion of the one metal trace to an electronic component lead on the identified substrate.