Claims
- 1. A method for processing a vacuum switch before carrying out ordinary interruption operations of the vacuum switch, the vacuum switch comprising a pair of relatively movable contacts, a contact surface of at least one contact being made of a copper-chromium alloy, said method comprising:
- before carrying out ordinary interruption operations of said vacuum switch, successively flowing through said contacts and interrupting an electric current having a density of about 1000 A/cm.sup.2 or higher, sufficient to evaporate a portion of said copper-chromium alloy, a predetermined number of times causing vapor of said copper-chromium alloy on said one contact to deposit onto a contact surface of the other contact thus forming a recrystallized copper-chromium layer.
- 2. The method according to claim 1 further comprising an additional step of passing through said contacts and interrupting an electric current having a density of about 500-1000 A/cm.sup.2 for a predetermined number of times for smoothing a surface of said recrystallized copper-chromium alloy.
- 3. A method for processing a vacuum switch, comprising the steps of:
- intermittently applying a first current to a stationary electrode and a movable electrode of said vacuum switch, said movable electrode being spaced from the stationary electrode in a vacuum vessel, each of said electrodes including a conductive surface area and at least one of said electrodes including a contact piece comprising a portion of a respective said conductive surface area, said contact piece including a copper-chromium alloy, said first current having a density sufficient to create an arc between said electrodes and to evaporate a portion of said copper-chromium alloy, an anode for said current comprising one of said electrodes having a said contact piece, and a cathode for said current comprising the other electrode;
- said first current eliminating impurities from said contact piece of said one electrode, and simultaneously depositing metal vapor from said contact piece of said one electrode to the conductive surface area of said other electrode, forming thereby a copper-chromium alloy layer covering said conductive surface area of said other electrode;
- intermittently applying to said electrodes a second current having a density sufficient to create an arc between said electrodes, said second current having a polarity opposite that of said first current;
- said second current depositing on said one electrode metal vapor from said copper-chromium alloy layer of said other electrode, thereby covering the conductive surface area of said one electrode with a layer of said copper-chromium alloy, and thereby producing a recrystallized layer of said copper-chromium alloy on said contact piece of said one electrode.
- 4. The method according to claim 3, wherein said first current has a density higher than said second current.
- 5. The method according to claim 3, wherein said first current density is greater than about 1000 A/cm.sup.2.
- 6. The method according to claim 3, wherein said contact piece of said one electrode comprises no more than about 30% of the respective electrode conductive surface area.
- 7. The method according to claim 3, wherein said intermittent application of said second current includes applying and interrupting said second current less than 10 times.
- 8. The method according to claim 7, wherein said second current is applied and interrupted 2 or 3 times.
Priority Claims (2)
Number |
Date |
Country |
Kind |
58-187069 |
Oct 1983 |
JPX |
|
59-43151 |
Mar 1984 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 709,068, filed Mar. 6, 1985, now abandoned.
US Referenced Citations (3)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0115292 |
Aug 1984 |
EPX |
57-23430 |
Feb 1982 |
JPX |
58-73929 |
May 1983 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
709068 |
Mar 1985 |
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