Claims
- 1. A method for producing a semiconductor integrated circuit, comprising the steps of:forming a semiconductor integrated circuit including a thermal resistor made of tungsten silicide nitride; measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through current-carrying heating of the thermal resistor.
- 2. A method for producing a semiconductor integrated circuit according to claim 1, wherein the current-carrying heating is conducted by using a current source.
- 3. A method for producing a semiconductor integrated circuit according to claim 2, said forming step comprising the steps of:forming a tungsten silicide nitride film on a semiconductor substrate by reactive sputtering under a nitrogen partial pressure of 0.1 mTorr or higher; patterning the tungsten silicide nitride film in a predetermined pattern to form the thermal resistor containing at least about 5% by weight of silicon and having a negative temperature coefficient; and forming a pair of electrodes to be connected to the thermal resistor.
- 4. A method for producing a semiconductor integrated circuit according to claim 3, further comprising the step of forming another circuit portion on the semiconductor substrate.
- 5. A method for producing a semiconductor integrated circuit according to claim 3, wherein the tungsten silicide nitride film is formed by reactive sputtering in a reduced-pressure atmosphere containing nitrogen gas with a target made of tungsten silicide containing silicon.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-335333 |
Dec 1996 |
JP |
|
Parent Case Info
This is a division of application Ser. No. 08/988,799, filed Dec. 11, 1997, now U.S. Pat. No. 6,025,632.
US Referenced Citations (11)
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