Patent Application
20210159414
Embodiments of the present invention relate to a method for producing a vapor deposition mask, a vapor deposition mask producing apparatus, laser mask and a method for producing an organic semiconductor element.
With upsizing of the products using organic EL elements or increase in substrate sizes, a demand for upsizing is also growing with respect to vapor deposition masks, and the metal plates for use in production of the vapor deposition masks constituted of metals are also upsized. However, with the present metal processing technique, it is difficult to form openings in a large metal plate with high precision, which cannot respond to enhancement in definition of the openings.
Moreover, in the case of a vapor deposition mask constituted of only a metal, the mass thereof also increases with upsizing, and the total mass including a frame also increases, which becomes a hindrance to handling.
Under such circumstances, in Patent Document 1, there is proposed a method for producing a vapor deposition mask including a metal mask in which slits are provided and a resin mask which is positioned on the surface of the metal mask and in which openings corresponding to a pattern to be produced by vapor deposition are arranged for a plurality of rows in the lengthwise direction and in the crosswise direction, the metal mask and the resin mask being stacked. The method for producing the vapor deposition mask proposed in Patent Document 1 is regarded as being capable of producing the vapor deposition mask that satisfies both high definition and lightweight in upsizing.
Moreover, Patent Document 1 above discloses that in order to suppress generation of a shadow in production by vapor deposition using a vapor deposition mask, the sectional shape of the opening or the sectional shape of the slit is preferably a shape having broadening toward the vapor deposition source side. Notably, the shadow is a phenomenon that a part of a vapor deposition material released from a vapor deposition source collides with inner wall surfaces of the slit of the metal mask and/or the opening of the resin mask and does not reach the vapor deposition target, and thereby, a portion without vapor deposition that has a film thickness smaller than the intended vapor deposition film thickness arises.
An object of an embodiment of the present invention is a further improvement of the method for producing a vapor deposition mask proposed in Patent Document 1 above, and a primary object thereof is to provide a method for producing a vapor deposition mask and a vapor deposition mask producing apparatus capable of achieving lightweight even when upsized and capable of forming a vapor deposition pattern with higher definition than a conventional one by suppressing generation of a so-called shadow, further, a laser mask used in these producing method and producing apparatus, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with higher definition than a conventional one.
There is provided a method for producing a vapor deposition mask according to an embodiment of the present invention, including: a step of preparing a resin plate-equipped metal mask including a metal mask in which a slit is provided and a resin plate, the metal mask and the resin plate being stacked; and a step of performing irradiation with a laser from the metal mask side to form an opening corresponding to a pattern to be produced by vapor deposition in the resin plate, wherein in the step of forming the opening, by using a laser mask in which an opening region corresponding to the opening, and an attenuating region that is positioned in a periphery of the opening region and attenuates energy of the laser of the irradiation are provided, the opening corresponding to the pattern to be produced by vapor deposition is formed with respect to the resin plate with the laser that passes through the opening region, and a thin part is formed in a periphery of the opening of the resin plate with the laser that passes through the attenuating region.
In the aforementioned method for producing a vapor deposition mask, a transmittance of the laser in the attenuating region of the laser mask used in the step of forming the opening may be about 50% or less.
Moreover, there is provided a vapor deposition mask producing apparatus according to an embodiment of the present invention for producing a vapor deposition mask including a metal mask in which a slit is provided and a resin mask in which an opening corresponding to a pattern to be produced by vapor deposition is provided, the metal mask and the resin mask being stacked, the vapor deposition mask producing apparatus including a device that performs irradiation with a laser from the metal mask side with respect to a resin plate-equipped metal mask including a metal mask in which a slit is provided and a resin plate, the metal mask and the resin plate being stacked to form an opening corresponding to a pattern to be produced by vapor deposition in the resin plate, wherein in the device which forms the opening, a laser mask in which an opening region corresponding to the opening, and an attenuating region that is positioned in a periphery of the opening region and attenuates energy of the laser of the irradiation are provided is used, and the opening corresponding to the pattern to be produced by vapor deposition is formed with respect to the resin plate with the laser that passes through the opening region, and a thin part is formed in a periphery of the opening of the resin plate with the laser that passes through the attenuating region.
In the aforementioned vapor deposition mask producing apparatus, a transmittance of the laser in the attenuating region of the laser mask used in the step of forming the opening may be about 50% or less.
Moreover, there is provided a laser mask according to an embodiment of the present invention, used in forming an opening of a resin mask with a laser when producing a vapor deposition mask including a metal mask in which a slit is provided and the resin mask in which the opening corresponding to a pattern to be produced by vapor deposition is provided, the laser mask including: an opening region corresponding to the opening; and an attenuating region that is positioned in a periphery of the opening region and attenuates energy of the laser of irradiation.
In the aforementioned laser mask, a transmittance of the laser in the attenuating region may be about 50% or less.
Moreover, there is provided a method for producing an organic semiconductor element according to an embodiment of the present invention, including a vapor deposition pattern forming step of forming a vapor deposition pattern on a vapor deposition target using a vapor deposition mask, wherein in the vapor deposition pattern forming step, the vapor deposition mask produced by the aforementioned method for producing a vapor deposition mask of an embodiment of the present invention is used.
According to the method for producing a vapor deposition mask according to an embodiment of the present invention, the vapor deposition mask producing apparatus according to an embodiment of the present invention, and the laser mask according to an embodiment of the present invention, a vapor deposition mask capable of achieving light weight even when upsized and capable of forming a vapor deposition pattern with higher definition than a conventional one by suppressing generation of a so-called shadow can be produced. Moreover, according to the method for producing an organic semiconductor element of an embodiment of the present invention, organic semiconductor elements with higher definition than a conventional one can be produced.
Hereafter, embodiments of the present invention are described with reference to the drawings and the like. It should be noted that embodiments of the present invention can be implemented in many different modes and are not construed to be limited to the contents of the description of the embodiments exemplified below. Moreover, while the drawings are sometimes schematically presented as to the widths, thicknesses, shapes and the like of individual parts as compared with the actual modes in order to more clarify the description, these are merely exemplary but do not limit interpretation of the embodiments of the present invention. Moreover, in the present specification and the drawings, elements similar to the previously mentioned ones regarding the previously mentioned drawings are sometimes given the same signs to properly omit their detailed description. Moreover, while for convenience of the description, the description is sometimes made using terms such as upward and downward, the upward direction and the downward direction may be reversed.
Hereafter, a method for producing a vapor deposition mask according to an embodiment of the present invention is described using the drawings.
The method for producing a vapor deposition mask according to the present embodiment includes a step of preparing a resin plate-equipped metal mask including a metal mask in which a slit is provided and a resin plate, the metal mask and the resin plate being stacked, a step of fixing the prepared resin plate-equipped metal mask to a frame, and a step of performing irradiation with a laser from the metal mask side to form an opening corresponding to a pattern to be produced by vapor deposition in the resin plate. Hereafter, the individual steps are described.
As shown in
The metal mask 10 is constituted of metal, in which the slits 15 extending in the lengthwise direction and/or the crosswise direction are arranged. Openings 25 are formed at a position overlapping with the slits 15 in the resin plate constituting the resin plate-equipped metal mask 40 in a step mentioned later.
As a method of forming the metal mask 10 in which the slits 15 are provided, for example, the following method can be cited.
First, a masking member, for example, a resist material is applied onto the surface of a metal plate, predetermined portions thereof are exposed and developed, and thereby, a resist pattern in which positions where the slits 15 are finally to be formed remain is formed. The resist material used as the masking member is preferably excellent in processing ability with desired resolution. Next, etching processing is performed by an etching method using this resist pattern as an etching resistant mask. Next, after the completion of the etching, the resist pattern is cleaned and removed. In this way, the metal mask 10 in which the slits 15 are provided is obtained. The etching for forming the slits 15 may be performed on one surface side of the metal plate or may be performed on both surfaces thereof. Moreover, in the case where the slits 15 are formed in the metal plate using a stacked body in which the resin plate is provided on the metal plate, the masking member may be applied onto the surface of the metal plate on the side that is not in contact with the resin plate to form the slits 15 by the etching from one surface side. Notably, in the case where the resin plate has etching resistance with respect to the etching agent for the metal plate, masking of the surface of the resin plate is not needed. Meanwhile, in the case where the resin plate does not have resistance with respect to the etching agent for the metal plate, the masking member is needed to be applied onto the surface of the resin plate. Moreover, in the above, while the case where the resist material is used as the masking member is exemplarily described, in place of the application of the resist material, a dry film resist may be laminated to perform the similar patterning. Notably, the metal mask 10 constituting the resin plate-equipped metal mask 40 is not limited to one formed by the method exemplified above but can also employ a commercial product. Moreover, in place of the formation of the slits 15 by etching, the slits 15 can also be formed by irradiation with laser light.
A method of pasting the metal mask 10 and the resin plate 30 constituting the resin plate-equipped metal mask 40 together and a forming method thereof are not specially limited. For example, the resin plate-equipped metal mask 40 can also be obtained by beforehand preparing a stacked body formed by coating of a resin layer with respect to a metal plate to be the metal mask 10, and forming the slits 15 in the metal plate in the state of the stacked body. In the present embodiment, the resin plate 30 constituting the resin plate-equipped metal mask 40 includes not only a plate-like resin but also a resin layer and a resin film formed by coating as mentioned above. In other words, the resin plate 30 may be beforehand prepared or may be formed by a conventionally known coating method or the like. Moreover, the resin plate 30 is a concept including a resin film and a resin sheet. Moreover, the hardness of the resin plate 30 is not limited but it may be a hard plate or a soft plate. Moreover, the metal mask 10 and the resin plate 30 may be pasted together with various adhesive agents or the resin plate 30 that has self-adhesion may be used. Notably, the dimensions of the metal mask 10 and the resin plate 30 may be the same. Notably, with fixing of a vapor deposition mask 100 produced by the producing method of the present embodiment to a frame 50 taken into consideration, the dimension of the resin plate 30 may be made smaller than that of the metal plate 10 to set the outer circumferential portion of the metal mask 10 to be in the state of exposure, which facilitates welding of the metal mask 10 to the frame 50.
Next, as shown in
Next, as shown in
The laser mask 70 is provided with opening regions 71 corresponding to patterns to be produced by vapor deposition, in other words, corresponding to openings formed in the final stage, and attenuating regions 72 that are positioned in the peripheries of the opening regions 71 and attenuate the energy of the laser of the irradiation. By using such a laser mask 70, as shown in
By forming the thin parts 26 in the peripheries of the openings 25, generation of a so-called shadow can be suppressed in the case where the patterns are produced by vapor deposition using the vapor deposition mask 100, which can improve pattern precision. Moreover, by simultaneously forming the openings 25 along with the thin parts 26 positioned in the peripheries thereof as in the present embodiment, dimensional precision can be dramatically improved.
Hereafter, the laser mask used in the method for producing a vapor deposition mask of the present embodiment is described using the figures.
As shown in
Here, the opening regions 71 are not specially mentioned but through holes corresponding to patterns to be produced by vapor deposition or the like are the opening regions 71. Accordingly, the shape of the opening region 71 is not limited to be rectangular as shown in the figure but, when the pattern to be produced by vapor deposition is circular, the shape of the opening region 71 is also correspondingly circular in the nature of things, and when the pattern to be produced by vapor deposition is hexagonal, the shape of the opening region 71 is also hexagonal. Notably, while the transmittance of the laser in the opening region 71 is 100% when the opening region 71 is a through hole, it is not necessarily 100% but can be properly designed in its relative relation to the transmittance of the laser in the attenuating region 72 mentioned later. In other words, the “opening region 71” in an embodiment of the present invention is a region for forming an opening formed in a vapor deposition mask in the final stage, and the opening region 71 itself is not necessarily in the state of opening like a through hole. Accordingly, the effect can be achieved, for example, even when the transmittance of the laser in the opening region 71 is 70% and the transmittance of the laser in the attenuating region 72 mentioned later is 50%.
The attenuating regions 72 are formed for the purpose to form the thin parts 26 in the peripheries of the openings 25 of the resin plate 30 with the laser having passed through the attenuating regions 72 in timing when the openings 25 are formed in the resin plate 30 with the laser having passed through the opening regions 71, as shown in
For example, as shown in
Here, the “resolution of the laser” in the present specification is the lower limit value of line-and-space that can be formed when the line-and-space constituted of through grooves is formed with respect to a resin plate as a processing target.
Here, the dimension of the attenuating region 72, in other words, the distance from the end side of the opening region 71 to the end side of the attenuating region 72 is not specially limited but it only has to be properly designed with the dimension of the thin part 26 to be formed in the periphery of the opening of the resin mask in the final stage and the distance between the openings 25 taken into consideration.
For example, as shown in
Meanwhile, for example, as shown in
Furthermore, for example, as shown in
Notably, the shapes of the through grooves 74 and the through holes 75 for forming the attenuating region 72 can be properly designed, they are not necessarily formed separate from the opening region 71, and as shown in FIGS. 3F, 3H and 3K, the through grooves 74 and the through holes 75 may be continuous to the opening region 71.
Moreover, as shown in
Moreover, as shown in
Moreover, when the width of ⅓D in
Moreover, while in the aforementioned description, the attenuating region 72 is constituted of the through grooves 74 or the through holes 75 having opening widths smaller than the value of the production of the “resolution of the laser” and the “reducing rate of the optical system of the laser processing apparatus”, embodiments of the present invention are not limited to this.
As shown in
Moreover, meanwhile, as shown in
Furthermore, as shown in
Hereafter, preferable modes of the vapor deposition mask are described. Notably, the vapor deposition mask described here is not limited to the modes described below but may be in any mode as long as a condition is satisfied that the metal mask in which the slit is formed is stacked on the resin mask in which the openings corresponding to a pattern to be produced by vapor deposition are formed at a position overlapping with the slit. For example, the slit formed in the metal mask may be stripe-shaped (not shown). Moreover, the slit of the metal mask may be provided at a position not overlapping with the whole one screen. This vapor deposition mask may be produced by the method for producing a vapor deposition mask according to an embodiment of the present invention described above, or may be produced by another method.
As shown in
The vapor deposition mask 100 of Embodiment (A) is a vapor deposition mask used for simultaneously forming vapor deposition patterns for a plurality of screens. One vapor deposition mask 100 can simultaneously form vapor deposition patterns compatible with a plurality of products. “Openings” stated for the vapor deposition mask of Embodiment (A) mean patterns to be produced using the vapor deposition masks 100 of Embodiment (A). For example, when the vapor deposition mask is used for forming an organic layer in an organic EL display, the shape of the openings 25 is a shape of the organic layer. Moreover, “one screen” is constituted of an aggregate of openings 25 corresponding-to one product. When the one product is an organic EL display, an aggregate of organic layers needed for forming one organic EL display, in other words, an aggregate of openings 25 to be the organic layers is “one screen”. Further, in the vapor deposition mask 100 of Embodiment (A), in order to simultaneously form the vapor deposition patterns for the plurality of screens, the aforementioned “one screen” is arranged for each of the plurality of screens in the resin mask 20 at predetermined intervals. Namely, in the resin mask 20, the openings 25 needed for constituting the plurality of screens are provided.
The vapor deposition mask of Embodiment (A) includes the metal mask 10 in which the plurality of slits 15 are provided, the metal mask being provided on one surface of the resin mask, wherein each slit is provided at the position overlapping with the entirety of at least one screen. In other words, it is characterized in that between the openings 25 needed for constituting one screen, metal line portions which have the same length as the length of the slit 15 in the lengthwise direction and have the same thickness as that of the metal mask 10 between the openings 25 adjacent in the crosswise direction, or metal line portions which have the same length as the length of the slit 15 in the crosswise direction and have the same thickness as that of the metal mask 10 between the openings 25 adjacent in the lengthwise direction do not exist. Hereafter, the metal line portions which have the same length as the length of the slit 15 in the lengthwise direction and have the same thickness as that of the metal mask 10 and the metal line portions which have the same length as the length of the slit 15 in the crosswise direction and have the same thickness as that of the metal mask 10 are sometimes collectively referred to simply as metal line portions.
According to the vapor deposition mask 100 of Embodiment (A), even when the dimension of the openings 25 needed for constituting one screen and the pitch between the openings 25 constituting one screen are made small, for example, even when the dimension of the openings 25 and the pitch between the openings 25 are made extremely fine in order to form a screen exceeding 400 ppi, interference due to metal line portions can be prevented and an image with high definition can be formed. Accordingly, in the method for producing a vapor deposition mask according to the present embodiment, the vapor deposition mask is preferably produced so as to be Embodiment (A) in the final stage. Notably, when one screen is divided by a plurality of slits, in other words, when the metal line portions having the same thickness as that of the metal mask 10 exist between the openings 25 constituting one screen, as the pitch between the openings 25 constituting one screen is smaller, the metal line portions existing between the openings 25 more become a hindrance in forming the vapor deposition pattern on the vapor deposition target and the vapor deposition pattern with high definition is more difficult to be formed. In other words, when the metal line portions having the same thickness as that of the metal mask 10 exist between the openings 25 constituting one screen, the metal line portions in the case of setting the frame-equipped vapor deposition mask cause generation of a shadow, which results in difficulty of formation of a screen with high definition.
Next, referring to
In the mode shown in
As described above, the slit 15 may be provided at a position overlapping with only one screen, or as shown in
Next, exemplified by the mode shown in
While a pitch (P3) in the crosswise direction and a pitch (P4) in the lengthwise direction between the screens are not specially limited but, as shown in
Notably, as shown in
Next, the vapor deposition mask of Embodiment (B) is described. As shown in
The opening 25 stated for Embodiment (B) means an opening needed for forming the vapor deposition pattern on the vapor deposition target. An opening not needed for forming the vapor deposition pattern on the vapor deposition target may be provided at a position of not overlapping with the one slit 16 (the one through hole). Notably,
In the vapor deposition mask 100 of Embodiment (B), the metal mask 10 having the one through hole 16 is provided on the resin mask 20 having the plurality of openings 25, and all of the plurality of openings 25 are provided at a position overlapping with the one slit 16 (the one through hole). In the vapor deposition mask 100 of Embodiment (B) that has this configuration, metal line portions that have the same thickness as the thickness of the metal mask or a larger thickness than the thickness of the metal mask do not exist between the openings 25. Hence, as described for the aforementioned vapor deposition mask of Embodiment (A), the vapor deposition pattern with high definition can be formed to match the dimensions of the openings 25 provided in the resin mask 20 without suffering interference of metal line portions.
Moreover, according to the vapor deposition mask of Embodiment (B), there is almost no influence of a shadow even when the thickness of the metal mask 10 is made large. Hence, the thickness of the metal mask 10 can be made larger to such an extent that durability and handling ability are sufficiently satisfied. While a vapor deposition pattern with high definition can be formed, durability and handling ability can be improved. Accordingly, in the method for producing a vapor deposition mask of an embodiment, the vapor deposition mask is preferably produced so as to be Embodiment (B) in the final stage.
The resin mask 20 in the vapor deposition mask of Embodiment (B) is constituted of resin, in which as shown in
“One screen” in the vapor deposition mask 100 of Embodiment (B) means an aggregate of openings 25 corresponding to one product. When the one product is an organic EL display, an aggregate of organic layers needed for forming one organic EL display, in other words, an aggregate of openings 25 to be the organic layers is “one screen”. While the vapor deposition mask of Embodiment (B) may be constituted of only “one screen” or may be provided by arranging the “one screen” for each of a plurality of screens, in the case where the “one screen” is arranged for each of the plurality of screens, the openings 25 are preferably provided at predetermined intervals on a screen-by-screen basis (refer to
The metal mask 10 in the vapor deposition mask 100 of Embodiment (B) is constituted of metal and includes the one slit 16 (the one through hole). Further, in the vapor deposition mask of Embodiment (B), the one slit 16 (the one through hole) is disposed at a position overlapping with all of the openings 25 as seen head-on of the metal mask 10, in other words, at a position where all of the openings 25 arranged in the resin mask 20 can be seen.
The metal portion constituting the metal mask 10, that is, the portion thereof other than the one slit 16 (the one through hole) may be provided along the outer edge of the vapor deposition mask 100 as shown in
While a width (W1), in the crosswise direction, and a width (W2), in the lengthwise direction, of the metal portion constituting the wall surface of the through hole of the metal mask 10 shown in
Moreover, while in the vapor deposition mask of each embodiment described above, the openings 25 are regularly formed in the resin mask 20, the openings 25 may be alternately arranged in the crosswise direction or the lengthwise direction as seen from the metal mask 10 side of the vapor deposition mask 100 (not shown). In other words, the openings 25 adjacent in the crosswise direction may be displaced and arranged in the lengthwise direction. In such an arrangement, even in the case of thermal expansion of the resin mask 20, the openings 25 can absorb expansions arising in portions therein, and a large deformation due to accumulation of the expansions can be prevented from arising.
Moreover, in the vapor deposition mask of each embodiment described above, on the resin mask 20, grooves (not shown) extending in the lengthwise direction or the crosswise direction of the resin mask 20 may be formed. While in the case of application of heat in vapor deposition, there is a possibility that the resin mask 20 undergoes thermal expansion, and thereby, changes in dimension and position of the opening 25 arise, by forming the grooves, they can absorb the expansion of the resin mask, and can prevent the changes in dimension and position of the opening 25 caused by the resin mask 20 expanding in a predetermined direction as a whole due to accumulation of thermal expansions arising in portions in the resin mask. Formation positions of the grooves are not limited but while they may be provided between the openings 25 constituting one screen and at positions overlapping with the openings 25, they are preferably provided between the screens. Moreover, the grooves may be provided on one surface of the resin mask, for example, only on the surface on the side that is in contact with the metal mask, or may be provided only on the surface on the side that is not in contact with the metal mask. Otherwise, they may be provided on both surfaces of the resin mask 20.
Moreover, the grooves extending in the lengthwise direction may be between the neighboring screens, or the grooves extending in the crosswise direction may be formed between the neighboring screens. Furthermore, the grooves can also be formed in an aspect having these combined.
The depth and the width of the grooves are not specially limited but since the rigidity of the resin mask 20 tends to decrease in the case where the depth of the grooves is too large and in the case where the width thereof is too large, setting is needed with this point taken into consideration. Moreover, the sectional shape of the grooves is not specially limited but only has to be arbitrarily selected as a U-shape, a V-shape or the like with the processing method and the like taken into consideration. The same holds true for the vapor deposition mask of Embodiment (B).
Next, a vapor deposition mask of Embodiment (C) is described.
As shown in
Notably, the sectional shape of the thin part 26 may be an upwardly convex arc-shape as a whole including some roughness as shown in
Moreover, meanwhile, as shown in
Furthermore, as shown in
Notably, a method for producing the vapor deposition masks of Embodiment (C) shown in
Next, a vapor deposition mask producing apparatus according to an embodiment of the present invention is described. The vapor deposition mask producing apparatus according to the present embodiment is characterized in that the laser mask used in (Method for Producing Vapor Deposition Mask) described above is used. Accordingly, for the other parts, individual configurations of a conventionally known vapor deposition mask producing apparatus only have to be properly selected and used. According to the vapor deposition mask producing apparatus according to the present embodiment, similarly to (Method for Producing Vapor Deposition Mask) described above, in an opening forming machine that irradiates a resin plate-equipped metal mask including a metal mask in which a slit is provided and a resin plate, the metal mask and the resin plate being stacked, with a laser from the metal mask side to form an opening corresponding to a pattern to be produced by vapor deposition in the resin plate, wherein by using a laser mask in which an opening region corresponding to the opening and an attenuating region that is positioned in the periphery of the opening region and attenuates the energy of the laser of the irradiation, the opening corresponding to the pattern to be produced by vapor deposition can be formed in the resin plate with the laser that passes through the opening region, and a thin part can be formed in the periphery of the opening of the resin plate with the laser that passes through the attenuating region.
Next, a method for producing an organic semiconductor element according to an embodiment of the present invention is described. The method for producing an organic semiconductor element according to the present embodiment is characterized in that the vapor deposition mask produced by the method for producing a vapor deposition mask according to the present embodiment described above is used. Accordingly, detailed description of the vapor deposition mask is herein omitted.
The method for producing an organic semiconductor element according to the present embodiment includes an electrode forming step of forming electrodes on a substrate, an organic layer forming step, a counter electrode forming step, a sealing layer forming step and the like, and in any of the steps, a vapor deposition pattern is formed on the substrate in a vapor deposition method using the vapor deposition mask. For example, in the case where the vapor deposition method using the vapor deposition mask is applied to each of light-emitting layer forming steps for colors of R, G and B in an organic EL device, vapor deposition patterns are formed for the light-emitting layers for the colors on the substrate. Notably, the method for producing an organic semiconductor element according to the present embodiment is not limited to these steps but can be applied to any steps in conventionally known production of an organic semiconductor element using a vapor deposition method.
In the frame-equipped vapor deposition mask 200 used in the step of forming the vapor deposition pattern, as shown in
The frame 60 is a substantially rectangular frame member and includes a through hole for exposing the openings 25 provided in the resin mask 20 of the vapor deposition mask 100 fixed in the final stage to the vapor deposition source side. The material of the frame is not specially limited but a metal material large in rigidity, for example, a SUS or invar material or a ceramic material or the like can be used. Above all, a metal frame is preferable in view of being able to easily perform welding to the metal mask of the vapor deposition mask and being small in influence of deformation and the like.
The thickness of the frame is not specially limited but is preferably about 10 mm to 30 mm in view of rigidity and the like. The widths of the inner circumferential end face of the opening of the frame and the outer circumferential end face of the frame are not specially limited as long as they are widths with which the frame and the metal mask of the vapor deposition mask can be fixed to each other, but, for example, widths of about 10 mm to 70 mm can be exemplarily cited.
Moreover, as shown in
According to the method for producing an organic semiconductor element according to the present embodiment, since the thin part 26 is formed in the periphery of the opening 25 of the vapor deposition mask 100 used, when a pattern is produced by vapor deposition, generation of a so-called shadow can be suppressed, and pattern precision can be improved.
As organic semiconductor elements produced in the method for producing an organic semiconductor element according to the embodiment, for example, organic layers, light-emitting layers, cathode electrodes and the like of organic EL elements can be cited. In particular, the method for producing an organic semiconductor element of an embodiment can be preferably used for production of R, G and B light-emitting layers of organic EL elements which require pattern precision with high definition.
Hereafter, examples are presented.
A polyimide resin plate with about 5 μm of thickness was prepared, and using a laser mask according to Example 1 which had features presented in Table 1 below, openings and thin parts were formed in the polyimide resin plate. Notably, laser used in forming the openings and the thin parts was excimer laser with 248 nm of wavelength.
In the same way as in Example 1 above, using laser masks according to Examples 2 to 9 which had features presented in Table 1 below, openings and thin parts were formed in the polyimide resin plates.
Notably, D in Table 1 above is the length of the width of the attenuating region (see
Moreover, a in Table 1 above is a reducing rate=(the size of the opening region on the laser mask)/(the size of the opening on the vapor deposition mask).
Moreover, the results of the formations of the openings and the thin parts in the polyimide resin plates using the laser masks according to Examples 1 to 9 above are collectively presented in Table 2 below.
Notably, the “Taper Angle (°) in Cross-Section” in Table 2 above is the angle formed by the sidewall of the opening formed in the polyimide resin plate and the bottom surface in each of
Notably, when the shape of the sidewall of the opening formed in the polyimide resin plate is a curve like an upwardly convex arc-shape, it is the angle formed by the tangential line and the bottom surface.
As apparent from the sectional pictures in
For example, as shown in
Meanwhile, as shown in
Moreover, meanwhile, as shown in
| Number | Date | Country | Kind |
|---|---|---|---|
| 2015-019665 | Feb 2015 | JP | national |
| 2016-018161 | Feb 2016 | JP | national |
This application is a division of U.S. application Ser. No. 15/546,710, filed Jul. 27, 2017, which in turn is the National Stage entry of International Application No. PCT/JP2016/053145, filed Feb. 3, 2016, the entireties of which are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 15546710 | Jul 2017 | US |
| Child | 17166370 | US |
