The present invention is related to commonly-assigned and co-filed U.S. patent application Ser. No. 10/159,379 entitled “Fabrication Of A Waveguide Taper Through Ion Implantation” by M. Salib et al., and to U.S. patent application Ser. No. 10/159,238 entitled “Epitaxial Growth For Waveguide Tapering” by M. Morse.
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4911516 | Palfrey et al. | Mar 1990 | A |
6200502 | Paatzsch et al. | Mar 2001 | B1 |
6380092 | Annapragada et al. | Apr 2002 | B1 |
6411764 | Lee | Jun 2002 | B1 |
Number | Date | Country |
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09297235 | Nov 1997 | JP |
11284061 | Oct 1999 | JP |
WO 0036442 | Jun 2000 | WO |
PCTUS 0311833 | Oct 2003 | WO |
Entry |
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Brenner T. et al., “Vertically Tapered InGaAsP/InP Waveguides for Highly Efficient Coupling to Flat-end Single-mode Fibers”, American Institute of Physics, Aug. 15, 1994, pp. 798-800, vol. 65, Woodbury, NY, US. |