LPCVD of Borophosphosilicate Glass from Organic Reactants, by D.S. Williams (AT&T Bell Laboratories, Murray Hill, New Jersey 07974) and E.A. Dein (AT&T Bell Laboratories, Allentown, Pennsylvania 18103), J. Electrochem Soc.: Solid-State Science and Technology, 134, No.3 (Mar. 1987), 657-664. |
Low Pressure Deposition of Doped SiO.sub.2 by Pyrolysis of Tetraethylorthosilicate (TEOS), I. Boron and Phosphorus Doped Films, by F.S. Becker *Siemens AG, Company Project MEGA in Germany) and S. Rohl (Siemens AG, Microelectronics Technology Center in Germany), J. Electrochem Soc.: Solid-State Science and Technology, 134, No. 11(Nov. 1987), 2923-2931. |
The LPCVD of Silicon Oxide Films below 400.degree. C. from Liquid Sources, by A.K.Hochberg and D.L. O/Meara (J.C. Schumacher Company, Carlsbad, California 92009), J. Electrochem. Soc., 136, No. 6 (Jun. 1989), 1843 + 1844. |