This application claims priority to Taiwan Application Serial Number 112124822, filed Jul. 3, 2023, which is herein incorporated by reference.
The present disclosure relates to a method for reducing surface tension of polymer material and a method for controlling orientation of block copolymer thin film. More particularly, the present disclosure relates to a method for reducing surface tension of polymer material by decompression effect and a method for controlling orientation of block copolymer thin film by decompression effect.
The self-assembly of the block copolymer (BCP) has received intensive attention and research because of it can create a variety of well-ordered nanostructured phase. In the thin-film state, the microphase-separated nanostructures from the BCP self-assembly generate the well-defined nanopatterns which can be used in the soft lithography or other industrial applications.
At present, among various nanostructured phases, the perpendicularly oriented nanostructures are critical for the practical applications of the block copolymer thin film for nanopatterning. The silicon-based block copolymer is one of the most commonly used BCP, but it has the problem of block with extremely low surface energy, which results in the formation of a wetting layer on the air surface, so as to hinder the perpendicular orientation of the BCP thin film.
Therefore, how to solve the problem of the low surface energy of the polymer material to achieve the target controlled orientation of well-ordered nanostructure of BCP thin film effectively is the goal of the relevant industry.
According to one aspect of the present disclosure, a method for reducing surface tension of polymer material by decompression effect includes step as follows. A decompression step is performed, wherein a polymer material is placed at a low pressure environment to reduce a surface tension of the polymer material, and a pressure of the lower pressure environment is lower than 105 Pa.
According to another aspect of the present disclosure, a method for controlling orientation of block copolymer thin film by decompression effect includes steps as follows. A block copolymer thin film is provided, wherein the block copolymer thin film includes a first block and a second block. A decompression step is performed, wherein the block copolymer thin film is placed at a low pressure environment to reduce a surface tension difference between the first block and the second block, so as to control an orientation of the block copolymer thin film, and a pressure of the lower pressure environment is lower than 105 Pa.
The present disclosure can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:
The present disclosure will be further exemplified by the following specific embodiments. However, the embodiments can be applied to various inventive concepts and can be embodied in various specific ranges. The specific embodiments are only for the purposes of description, and are not limited to these practical details thereof.
Reference is made to
In the step 110, a decompression step is performed, wherein a polymer material is placed at a low pressure environment to reduce a surface tension of the polymer material, and a pressure of the low pressure environment is lower than 105 Pa. Specifically, the surface tension variation of the polymer material is related to the density variation thereof, and the change of the density dependence on the environment conditions at which increasing the temperature or decreasing the pressure can both reduce the density of the polymer material. Thus, increasing the temperature or decreasing the pressure can also reduce the surface tension of the polymer material, but the polymer material may be thermally degraded due to the extremely high temperature. Therefore, the present disclosure uses the decompression method to reduce the surface tension of the polymer material at the mild temperature.
Reference is made to
In the step 210, a block copolymer thin film is provided, wherein the block copolymer thin film includes a first block and a second block, and a surface tension of the first block can be greater than a surface tension of the second block. Specifically, if the surface tension difference between the two blocks in the block copolymer thin film is large, the second block with the lower surface tension will form a wetting layer at the interface between the air and the copolymer to hinder the controlled orientation of the block copolymer thin film. In order to solve the above problem, it is necessary to reduce the surface tension difference between the first block and the second block to avoid the formation of the wetting layer.
In the step 220, a decompression step is performed, wherein the block copolymer thin film is placed at a low pressure environment to reduce a surface tension difference between the first block and the second block, so as to control an orientation of the block copolymer thin film, and a pressure of the low pressure environment is lower than 105 Pa, preferably, the pressure of the low pressure environment can be 100 Pa to 10−4 Pa. Moreover, the step 220 further includes the block copolymer thin film placed at a heating temperature for thermal annealing, wherein the heating temperature can be 250° C. to 350° C.
In detail, the aimed orientation to be achieved by the block copolymer thin film of the present disclosure is a perpendicular orientation, so that the block copolymer thin film can preferably be selected but not limited to a cylindrical silicon-based block copolymer thin film, which can be but not limited to polystyrene-block-polydimethylsiloxane (PS-b-PDMS). Thus, the first block is polystyrene (PS), and the second block is polydimethylsiloxane (PDMS), but the surface energy of PDMS block is extremely low which will hinder the controlled orientation of the block copolymer thin film.
Therefore, the present disclosure reduces the surface tension difference between the first block and the second block by the influence of reducing pressure on the surface tension of the polymer material. When the pressure is reduced to the high vacuum, the surface tension between the block copolymer components can reach an equivalent value, that is, the surface tension of the first block can be reduced to close to the surface tension of the second block, so that the neutral surface can be formed at the interface between the air and the copolymer. Thus, the block copolymer thin film can form a plurality of perpendicularly oriented cylindrical structures which are ordered arrangement. This method does not require any complicated process to manufacture the neutral surface, such as a neutral layer coating, etc., can solve the general wetting layer problem of the silicon-based block copolymer, and can achieve the application of perpendicularly oriented nanostructure patterns.
The present disclosure will be further exemplified by the following specific embodiments so as to facilitate utilizing and practicing the present disclosure completely by the people skilled in the art without over-interpreting and over-experimenting. However, the readers should understand that the present disclosure should not be limited to these practical details thereof, that is, these practical details are used to describe how to implement the materials and methods of the present disclosure and are not necessary.
Example 1 to Example 6 of the present disclosure uses the capillary height method to measure the surface tension under the specific environmental conditions thereof. The type of polymer material and the environmental condition of Example 1 to Example 6 are shown in Table 1.
Reference is made to
Example 7 to Example 10 and Comparative Example 1 of the present disclosure are the cylinder-forming PS43-b-PDMS17 block copolymers spin-coated on a silicon wafer to form the block copolymer thin film, and respectively under the pressure of 100 Pa (Example 7), 10−1 Pa (Example 8), 10−3 Pa (Example 9), 10−4 Pa (Example 10) and 105 Pa (Comparative Example 1) with thermal annealing at 300° C. for 2 hours.
Reference is made to
Then, in order to ensure the decompression effect orientation, Example 7 to Example 10 and Comparative Example 1 are treated with reactive ion etching (RIE) by using O2 etchant for the degeneration of PS and conversion of PDMS into SiO2 simultaneously to provide the surface texture image of the block copolymer thin film under field emission-scanning electron microscopy (FE-SEM).
Reference is made to
As shown in
Furthermore, in order to further examine the decompression effect orientation, Example 7 to Example 10 and Comparative Example 1 are treated with RIE by using CF4/O2 mixed gas to remove PDMS of the top layer, followed by RIE with O2 etchant to provide the surface texture image of the block copolymer thin film under FE-SEM.
Reference is made to
As shown in
In conclusion, the present disclosure reduces the surface tension difference between the components of the block copolymer thin film by the influence of reducing the pressure on the surface tension of the polymer material, so as to control the orientation of the block copolymer thin film. In addition, when the pressure is reduced to the high vacuum environment, the block copolymer thin film can form the perpendicularly oriented cylinder structures with the high ordered arrangement. Thus, the problem of forming the wetting layer by the silicon-based block copolymer can be solved by adjusting the environmental conditions without any additional complicated process, so as to facilitate the application of the block copolymer thin film in nanopatterns.
Although the present disclosure has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims.
Number | Date | Country | Kind |
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112124822 | Jul 2023 | TW | national |