This disclosure relates to whisker growth and, more particularly, to methods of reducing whisker growth.
The growth of tin whiskers is a very serious reliability issue that complicates the use of lead-free electronic assemblies. Specifically, the growth of such whiskers may lead to electrical short circuits and/or the ultimate failure of the electronic assemblies. Much research has been performed concerning the actual cause of such whisker growth and methods of reducing the same. Unfortunately, the research data shows very complicated, frequently conflicting test results indicating that tin whisker growth is associated with many driving forces (e.g., solder oxidization and external/internal stresses) and the various combinations of these driving forces make the growth of tin whiskers a problem that has been hard to address.
In one implementation, a method of reducing whisker growths includes identifying a solder connection to be treated. The solder connection may contain one or more whisker growths. A heat source is applied at a defined temperature to the solder connection for a defined period of time sufficient to melt at least a portion of the one or more whisker growths. The heat source is removed from the solder connection prior to the melting of the solder connection.
One or more of the following features may be included. Applying a heat source may include heating a gas to the defined temperature, thus generating a heated gas. Applying a heat source may include applying the heated gas to the solder connection. Applying the heated gas may include applying the heated gas at a defined pressure sufficient to melt at least a portion of the one or more whisker growths. The defined pressure may be at least 10 psi above atmospheric pressure. The heated gas may include a non-oxidizing gas. The non-oxidizing gas may include nitrogen. The one or more whisker growths may be constructed at least in part of tin extruded from the solder connection. The defined temperature may be greater than the melting point of tin. The defined temperature may be greater than 250 degrees Celsius.
In one implementation, a method of reducing whisker growths includes identifying a solder connection to be treated. The solder connection may contain one or more whisker growths. A gas is heated to a defined temperature, thus generating a heated gas. The heated gas is applied to the solder connection for a defined period of time and at a defined pressure sufficient to melt at least a portion of the one or more whisker growths. The heated gas is removed from the solder connection prior to the melting of the solder connection.
One or more of the following features may be included. The defined pressure may be at least 10 psi above atmospheric pressure. The heated gas may include a non-oxidizing gas. The non-oxidizing gas may include nitrogen. The one or more whisker growths may be constructed at least in part of tin extruded from the solder connection. The defined temperature may be greater than the melting point of tin. The defined temperature may be greater than 250 degrees Celsius.
In one implementation, a method of reducing whisker growths includes identifying a solder connection to be treated. The solder connection may contain one or more tin whisker growths extruded from the solder connection. A heat source is applied at a defined temperature to the solder connection for a defined period of time sufficient to melt at least a portion of the one or more whisker growths. The heat source is removed from the solder connection prior to the melting of the solder connection. The defined temperature is greater than the melting point of tin.
One or more of the following features may be included. Applying a heat source may include heating a gas to the defined temperature, thus generating a heated gas, and applying the heated gas at a defined pressure sufficient to melt at least a portion of the one or more whisker growths. The defined pressure may be at least 10 psi above atmospheric pressure. The heated gas may include a non-oxidizing gas.
The details of one or more implementations are set forth in the accompanying drawings and the description below. Other features and advantages will become apparent from the description, the drawings, and the claims.
Like reference symbols in the various drawings indicate like elements.
System Overview:
Referring to
When identifying 12 the solder connections for treatment, all solder connections may be identified. Alternatively, only those solder connections in danger of having a whisker growth cause a short circuit may be identified. For example, only those solder connections that have a requisite level of connection density (i.e., sufficient to result in a whisker-based short circuit) may be identified. Additionally, the solder connections may be scrutinized and qualified for treatment based upon the type of solder connection. For example, those connections that are soldered with solder including less than 40% lead may be treated for whisker growth due to the higher level of surface tension associated with low-lead solder connection. Alternatively still, solder connections may first be examined under a microscope to determine if treatment is necessary.
Assume for illustrative purposes that
Once a solder connection (e.g., solder connection 100) to be treated is identified 12, a heat source may be applied 14 (at a defined temperature) to the solder connection (e.g., solder connection 100) for a defined period of time sufficient to melt at least a portion of the whisker growths (e.g., whisker growths 200, 202). However, the heat source may be removed 16 from solder connection 100 prior to the melting of the actual solder connection. An example of such a defined temperature is 250-300° C. (which is above the 232° C. melting point of tin).
Whisker growths may be characterized as having a significantly large surface area per unit volume when compared with solder joints, leads and other electronic components. While whisker growths may grow to a significant length, they are typically only a couple of microns wide. Accordingly, with such a high ratio of surface area to volume, whisker growths tend to melt quickly when subjected to a significantly higher level of heating during application of method 10.
Applying 14 a heat source may include heating 18 a gas to the defined temperature, thus generating a heated gas. This heated gas may then be applied 20 to the previously-identified 12 solder connection (e.g., solder connection 100). Applying 20 the heated gas may include applying 22 the heated gas at a defined pressure sufficient to melt at least a portion of the whisker growths. For example, the heated gas may be applied 22 at a pressure that is at least 10 psi above atmospheric pressure. The heated gas may be a non-oxidizing gas, a example of which includes but is not limited to nitrogen. By using a non-oxidizing gas, the formation of oxides on the surface of solder connection 100 may be reduced, which my help with the prevention of the formation of future whisker growths.
During typical applications of method 10, the defined temperature of the hot gas is approximately 150% of the melting temperature of tin. During a typical application of method 10, the heated gas is typically applied for a short duration of time sufficient to melt (in whole or in part) the whisker growths on the identified 12 solder connection (e.g., solder connection 100). However, by applying 22 the heated gas for only a limited period of time (e.g., typically less than five seconds), the solder connections (e.g., solder connection 100) and electronic assemblies will not receive enough thermal energy to melt/damage the solder connections or electronic assemblies. Typically, the higher the temperature of the heated gas, the shorter the duration of the application of the heated gas.
Referring also to
A number of implementations have been described. Nevertheless, it will be understood that various modifications may be made. Accordingly, other implementations are within the scope of the following claims.
Number | Name | Date | Kind |
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20050153532 | Osenbach et al. | Jul 2005 | A1 |
20070109758 | Han et al. | May 2007 | A1 |
20070284700 | Jackson et al. | Dec 2007 | A1 |
Number | Date | Country |
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09298266 | Nov 1997 | JP |