Claims
- 1. A method of manufacturing a hard metal substrate from a hard metal substrate having a hard material layer with pores and an intermediate layer of a chemically different material from the hard material layer, dispose between the hard metal substrate and the hard material layer, the hard material layer and the intermediate layer being made of respective materials that dissolve in a selected layer removal solution comprising hydrogen peroxide, so that the material of the intermediate layer is more readily dissolved in the removal solution than the material of the hard material layer during a selected time period, the hard material layer being selected from the group consisting of an oxide, nitride, carbide, carbonitride, or carboxynitride of at least one element from Group 4, 5, 6, 13, or 14 of the Periodic Table with the exclusion of TiN, and the intermediate layer consisting of TiN, the method comprising the steps of:applying the selected removal solution comprising hydrogen peroxide to the hard material layer so that the removal solution penetrates the pores of the hard material layer and contacts the intermediate layer to dissolve at least some of the intermediate layer to at least partly release the hard material layer from the hard metal substrate; and after at least some of the intermediate layer has been dissolved by the removal solution, removing the hard material layer from the hard metal substrate.
- 2. A method as claimed in claim 1, wherein the hard material layer is expressed as (En) X, and wherein E is the Group 4, 5, 6, 13 or 14 element of the Periodic Table, X is at least one of N, C and O, and n=2.
- 3. A method as claimed in claim 1, wherein a layer thickness dz of the intermediate layer is selected to be 0.01 μm≦dz≦0.5 μm.
- 4. A method as claimed in claim 1, wherein a layer thickness dz of the intermediate layer is selected to be 0.01 μm≦dz≦0.3 μm.
- 5. A method as claimed in claim 1, wherein a layer thickness dz of the intermediate layer is selected to be 0.01 μm≦dz≦0.2 μm.
- 6. A method as claimed in claim 1, wherein the Group 4, 5, 6, 13, or 14 elements of the periodic Table comprise at least one of aluminum, silicon, chromium or boron.
- 7. A method as claimed in claim 1, wherein the hard material layer comprises a CrC, CrN, CrCN or WCC layer.
- 8. A method as claimed in claim 1, wherein the hard material layer is a CrC, CrN, CrCN or WCC layer.
- 9. A method as claimed in claim 1, wherein the hard material layer comprises at least one of a TiAlN or a TiCrN layer.
- 10. A method as claimed in claim 1, wherein the hard material layer comprises a TiAlN layer.
- 11. A method as claimed in claim 1, wherein the hard material layer is only a TiAlN layer.
- 12. A method as claimed in claim 1, wherein the hard material layer has a thickness of at least 2 μm.
- 13. A method as claimed in claim 1, wherein the hydrogen peroxide removal solution is maximally 50 wt. % hydrogen peroxide.
- 14. A method as claimed in claim 1, wherein the hydrogen peroxide removal solution is maximally 20 wt. % hydrogen peroxide.
- 15. A method as claimed in claim 1, wherein NaOH is included in the removal solution.
- 16. A method as claimed in claim 1, wherein in the removal solution comprises maximally 5.0 wt. % NaHO.
- 17. A method as claimed in claim 1, wherein the removal solution comprises maximally 0.5 wt. % NaHO.
- 18. A method as claimed in claim 1, wherein at least on of the substances disodium oxalate and KNa tartrate tetrahydrate are included in the removal solution.
- 19. A method as claimed in claim 1, wherein at least one of the substances disodium oxalate and KNa tartrate tetrahydrate are included in the removal solution at maximally 5 wt. %.
- 20. A method as claimed in claim 1, wherein the removal solution comprises, exclusively of water, the hydrogen peroxide with NaHO and at least one of the substances disodium oxalate and KNa tartrate tetrahydrate.
Priority Claims (2)
Number |
Date |
Country |
Kind |
1269/98 |
Jun 1998 |
CH |
|
1404/98 |
Jul 1998 |
CH |
|
CROSS-REFERENCE TO RELATED APPLICATION
This is a continuation application of International Application PCT/CH99/00234, filed May 31, 1999 and claims priority on Swiss patent applications 1269/98 filed Jun. 11, 1998 and 1404/98 filed Jul. 1, 1998.
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Kind |
4889589 |
McComas |
Dec 1989 |
A |
6432219 |
Wijngaard et al. |
Aug 2002 |
B1 |
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4101843 |
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DE |
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Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/CH99/00234 |
May 1999 |
US |
Child |
09/735723 |
|
US |