Claims
- 1. A method for repairing a clear defect in a semiconductor mask or reticle, including the steps of:
- (a) creating an image of the region of said mask or reticle containing said clear defect using a first focused ion beam having an energy less than or equal to 1 KeV, where said beam is drawn from a group of ions consisting of silicon or beryllium,
- (b) defining the area of said clear defect,
- (c) scanning said area with a second ion beam drawn from a group of ions consisting of gold, chromium, platinum or palladium, where said second ion beam is different from said first ion beam.
- 2. A method for repairing a clear defect in a semiconductor mask or reticle, including the steps of:
- (a) creating an image of the region on said mask or reticle containing said clear defect using a first focused ion beam comprised of silicon ions at an energy in the range of 0.5 to 1.0 KeV,
- (b) defining the area of said clear defect,
- (c) scanning said area with a second focused ion beam comprised of chromium ions at an energy in the range of 0.5 to 1.0 KeV,
- (d) creating an image of the region on said mask or reticle where said defect was located with said first focused ion beam at an energy in the range of 0.5 to 1.0 KeV,
- (e) determining whether said clear defect has been repaired.
- (f) repeating steps (a) through (e) until said clear defect has been repaired.
Parent Case Info
This is a continuation of co-pending application Ser. No. 53,318 filed on Jul. 22, 1987, now abandoned. This is a division of application Ser. No. 902,676, filed Sep. 2, 1986.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4367429 |
Wang et al. |
Jan 1983 |
|
4503329 |
Yamaguchi et al. |
Mar 1985 |
|
4548883 |
Wagner |
Oct 1985 |
|
Divisions (1)
|
Number |
Date |
Country |
Parent |
902676 |
Sep 1986 |
|
Continuations (1)
|
Number |
Date |
Country |
Parent |
053318 |
Jul 1987 |
|