Patent Application
20120190151
The present invention generally relates to the field of the production of thin film solar cells of the CdTe/CdS type and more in particular it refers to a method for the activation of CdTe thin films that are suitable for being applied in this type of solar cells.
It has been demonstrated at a laboratory scale that the thin film solar cells of the CdTe/CdS type can reach efficiencies of 16.5% [X. Wu, Solar Energy 77, 803 (2004)]. However, in order to obtain such a high efficiency, a rather complex method and a rather costly “alkali free” glass substrate were used. According to a simplified method, using cost-effective “soda-lime” glass, it is possible to manufacture thin film solar cells of the CdTe/CdS type with an efficiency of 15.8% [N. Romeo et al., Solar Energy 77, 795 (2004)].
In any case, such high efficiency values are obtained only if the CdTe is treated at a temperature comprised between 380 and 420° C. in a chlorine-containing atmosphere. This treatment, hereafter indicated as activation treatment, on one hand improves the crystalline quality of the CdTe, increasing the dimensions of the crystalline grains and passivating the grain boundaries, and on the other hand it causes a part of the CdS to mix with the CdTe and p-dopes the CdTe by introducing Cd vacancies (VCd) associated with the Cl which are surface acceptor levels in the CdTe.
In general the activation treatment is carried out through the reaction
CdTe (solid)+2 Cl2 (gas) TeCl2(gas)+CdCl2 (gas)
In this way the smaller grains of CdTe, being bonded more weakly, enter vapour phase and, by resolidifying, increase the dimensions of the bigger grains.
There are different methods for providing the chlorine necessary for the activation treatment of the CdTe film.
The most common method is that of immersing CdTe in a solution that is saturated with CdCl2 and methanol and letting CdCl2 deposit over CdTe. After this, the two overlapping layers are put in an oven, brought to a temperature of 380-420° C. and left at this temperature for 10-30 minutes. At the end of this treatment, it is necessary to carry out an etching in Br-methanol or in a mixture of HNO3-HPO3 acids to remove the residual CdCl2 and possible oxides formed on the surface of the CdTe. In addition the etching treatment also has the function of creating a Te-rich surface that is needed to form a good electrical contact on the CdTe [D. Bonnet, Thin Solid Films, 361-362 (2000) 547-552].
Another way is that of depositing the CdCl2 through vacuum evaporation above the CdTe and carry on the aforementioned method.
Alternatively, the treatment is carried out in an inert gas so as to avoid the formation of oxides on the surface of CdTe [N. Romeo et al., Proc. 21st European Photovoltaic Solar Energy Conference 4-8 Sep. 2006, Dresden, Germany, pp. 1806-1809].
A further method is that of supplying the CI by using aggressive gases of the HCl or Cl2 type [T. X. Zhou et al., Proc. of the 1st WCPEC (1994), pgs. 103-106]. However, it is preferable to avoid the use of these aggressive gases in an industrial plant as they cause storage and handling problems.
Finally, WO 2006/085348 describes a method that uses non-toxic, Cl-containing inert gases. These gases belong to the Freon family, such as difluorochloromethane (HCF2Cl). Although these gases are neither toxic nor aggressive, they shall be banned in 2010 because they contribute to the reduction of the ozone layer.
The purpose of the present invention is to provide a method for the activation of a thin film of CdTe, which can be used in processes for the production of thin film solar cells of the CdTe/CdS type, through the use of inert and non-toxic products and that are harmless to the ozone layer.
Another purpose of the present invention is to provide a method of the above mentioned type in which a sufficient amount of chlorine and fluorine suitable for treating the films of CdTe is provided without directly supplying CdCl2 or HCl from outside.
These objects are reached with the method for activating the thin film of CdTe in a process for producing thin film solar cells of the CdTe/CdS type in which the film of CdTe is treated with a mixture formed by a fluorine-free chlorinated hydrocarbon and by a chlorine-free fluorinated hydrocarbon.
In particular, as fluorine-free chlorinated hydrocarbons suitable for the purposes of the present invention, those listed in the following table can be used:
The trichloro derivatives of higher alkanes of interest for the present invention are the hydrocarbon derivatives of the alkanes (CnH2n+2, with n<17), wherein three hydrogen atoms are replaced with three chlorine atoms (CnH2n−1Cl3).
The trichloro derivatives of higher alkenes of interest for the present invention are the hydrocarbon derivatives of the alkenes (CnH2n, with n<15) wherein three hydrogen atoms are replaced with three chlorine atoms (CnH2n−3Cl3).
For the purposes of the present invention, it is important for the used chlorinated hydrocarbons to have the following properties:
1. a liquefying temperature comprised between 193K (−100° C.) and 318K (25° C.), i.e. they are liquids at room temperature,
2. a vapour pressure comprised between 10−6 Pa (10−1 mbar) and 105 Pa (1 atm) at the temperature of 293K
3. a dissociation temperature comprised between 393K (100° C.) and 843K (550° C.).
Amongst these, the preferred chlorinated hydrocarbons are: 1-chlorobutane (CH3(CH2)3Cl), 1,1,2-trichloroethylene (CHClCCl2), and dichloromethane (CH2Cl2).
The chlorine-free fluorinated hydrocarbons (hydrofluorocarbons) suitable for the purposes of the present invention can be selected from those listed in the following table:
Amongst these, the preferred fluorinated hydrocarbons are trifluoromethane (CHF3), R-134a (1,1,1,2-tetrafluoroethane, CH2FCF3) and R-152a (1,1-difluoroethane, CH3CHF2)
By mixing a compound of the family of the chlorinated hydrocarbons (table 1) with a gas of the family of the fluorinated hydrocarbons (table 2) and treating the film of CdTe with the mixture thus obtained, results are obtained similar to those obtained with difluorochloromethane as described in WO 2006/085348.
The morphology of the CdTe after the treatment with the aforementioned mixture is very similar to that obtained with CHF2Cl. Moreover, the formation of micro-particles of carbon on the surface of the CdTe, that form by using the sole chlorinated compound, is inhibited probably because the fluorine-containing gas tends to bond the carbon.
Another role of the fluorinated hydrocarbon could be that of forming the (VCd-F) group that gives a surface level in the CdTe and that could be more effective than the (VCd—Cl) group in p-doping the CdTe.
The best results have been obtained by using 1-chlorobutane mixed with R-134a (C2H2F4) or R-152a (F2HC—CH3) with the proportion 2 mbar of 1-chlorobutane/200 mbar of R-134a or R-152a.
The treatment conditions are as follows:
The sample used is a soda-lime glass covered in sequence by 0.5 μm of ITO, 0.1 μm of ZnO, 0.1 μm of CdS and 6 μm of CdTe, as in the prior art. The experiments were carried out by using a quartz ampoule in which the sample is introduced and that is evacuated through a rotary turbomolecular pump system reaching a vacuum of at least 10−4-10−3 Pa (10−6-10−5 mbar). The ampoule is brought to a temperature that varies from 350 to 400° C. A controlled amount of chlorinated hydrocarbon is introduced into the ampoule, said amount being measured through a “baratron” type measuring head. The pressure of the chlorinated hydrocarbon is adjusted between 50 and 2000 Pa (5×10−1 and 20 mbar). The fluorinated hydrocarbon with partial pressure that are from 1×104 to 5×104 Pa (100 to 500 mbar) is also added. An inert gas can be added to this mixture of hydrocarbons, such as Ar, with partial pressure ranging from 104 to 0 Pa (100 to 0 mbar), so as to reach a total pressure of 5×104 Pa (500 mbar).
The cells are completed by making the back-contact on the activated CdTe film according to the method of the invention. The efficiency of the cells produced in this way resulted comparable to that of the cells obtained by using CHF2Cl, i.e. comprised between 14 and 15.4%.
| Number | Date | Country | Kind |
|---|---|---|---|
| FI2009A000220 | Oct 2009 | IT | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/IB2010/054587 | 10/11/2010 | WO | 00 | 4/11/2012 |
