Claims
- 1. In a process for heating material within an enclosure, a wall portion of which carries thermal radiation from a thermal radiation source region toward a closure means, the improvement comprising:
- placing a thermal radiation scattering region in said wall portion between said source region and said closure means so as to intercept and disperse part of said radiation.
- 2. The process of claim 1 further comprising a process for heating a semiconductor material within said enclosure.
- 3. A method for protecting a closure means for a thermal radiation carrying member composed of a predetermined material, from radiation being carried by said member within said material from a portion of said member exposed to a thermal radiation source, comprising:
- installing serially in said material of said member a thermal radiation scattering zone between said source and said closure means so as to reduce the thermal radiation reaching said closure means.
- 4. A process for manufacturing semiconductor devices, comprising:
- providing a semiconductor material adapted to be processed by heating in an enclosure having a hot zone;
- providing said enclosure for heating said semiconductor material in said hot zone, wherein said enclosure has a closure means, wherein said enclosure has a wall portion between said hot zone and said closure means which carries thermal radiation from said hot zone toward said closure means, and wherein said wall portion comprises a thermal radiation scattering region in said wall portion and between said hot zone and said closure means; and
- heating said semiconductor material in said hot zone.
- 5. The process of claim 4 wherein said second providing step comprises providing a quartz enclosure.
- 6. A process for manufacturing semiconductor material comprising:
- providing an enclosure for heating said semiconductor material in a hot zone wherein said enclosure has a wall part which transmits thermal radiation;
- providing an access port for said enclosure, coupled to said wall part;
- providing between said hot zone and said access port a thermal radiation scattering means in said wall part to prevent a portion of said thermal radiation propagating in said wall part toward said access port from reaching said access port;
- introducing into said enclosure a source material comprising said semiconductor material, and
- heating said source material in said enclosure to produce said semiconductor material.
Parent Case Info
This is a division of application Ser. No. 250,494, filed on Apr. 2, 1981, now U.S. Pat. No. 4,411,619.
US Referenced Citations (6)
Non-Patent Literature Citations (2)
Entry |
Introduction to Ceramics, Second Edition, W. D. Kingery et al., John Wiley & Sons, N.Y., 1976, pp. 646-703. |
Handbook of Electronic Materials IF1 Plenum Data Corporation, Plenum Publishing Corp., New York, 1971, vols. 1, 2 & 3. |
Divisions (1)
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Number |
Date |
Country |
Parent |
250494 |
Apr 1981 |
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