Claims
- 1. A method of programming a memory cell with a substrate that comprises a first region and a second region with a channel therebetween and a gate above said channel, and a charge trapping region that contains a first amount of charge, the method comprising:applying a constant first voltage across said gate; applying a second constant voltage across said first region; and applying a third constant voltage across said second region that is near the avalanche breakdown voltage of said second region so that spillover electrons are significantly reduced in number within said channel when compared to if said third constant voltage is well below said avalanche breakdown voltage.
- 2. The method of claim 1, wherein said first region is grounded.
- 3. The method of claim 1, wherein said third constant voltage is in the range of 8 to 9 V.
- 4. The method of claim 3, wherein second constant voltage is approximately 10 V.
- 5. The method of claim 1, wherein second constant voltage is approximately 10 V.
- 6. The method of claim 1, wherein said memory cell comprises an EEPROM memory cell.
- 7. The method of claim 6, wherein said memory cell comprises a two bit memory cell.
- 8. The method of claim 1, wherein said memory cell comprises a two bit memory cell.
- 9. The method of claim 1, wherein said memory cell comprises:a P-type substrate; and a dielectric layer that lies between said channel and said charge trapping region.
- 10. The method of claim 9, wherein said memory cell further comprises an electrical isolation layer located above said channel.
- 11. The method of claim 9, wherein said dielectric layer comprises silicon dioxide.
- 12. The method of claim 11, wherein said charge trapping layer comprises silicon nitride.
Parent Case Info
Applicants claim, under 35 U.S.C. §119(e), the benefit of priority of the filing date of Jun. 23, 2000, of U.S. Provisional Patent Application Serial No. 60/213,397, filed on the aforementioned date, the entire contents of which are incorporated herein by reference.
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/213397 |
Jun 2000 |
US |