Method of fabricating a fluid jet printhead

Abstract
A fluid-jet printhead has a substrate having at least one layer defining a fluid chamber for ejecting fluid. The printhead also includes a resistive layer disposed between the fluid chamber and the substrate wherein the fluid chamber has a smooth planer surface between the fluid chamber and the substrate. The printhead has a conductive layer disposed between the resistive layer and the substrate wherein the conductive layer and the resistive layer are in direct parallel contact. The conductive layer forms at least one void creating a planar resistor in the resistive layer. The planar resistor is aligned with the fluid chamber.
Description




THE FIELD OF THE INVENTION




This invention relates to the manufacturer of printheads used in fluid-jet printers, and more specifically to a fluid-jet printhead used in a fluid-jet print cartridge having improved dimensional control and improved step coverage.




BACKGROUND OF THE INVENTION




One type of fluid-jet printing system uses a piezoelectric transducer to produce a pressure pulse that expels a droplet of fluid from a nozzle. A second type of fluid-jet printing system uses thermal energy to produce a vapor bubble in a fluid-filled chamber that expels a droplet of fluid. The second type is referred to as thermal fluid-jet or bubble jet printing systems.




Conventional thermal fluid-jet printers include a print cartridge in which small droplets of fluid are formed and ejected towards a printing medium. Such print cartridges include fluid-jet printheads with orifice structures having very small nozzles through which the fluid droplets are ejected. Adjacent to the nozzles inside the fluid-jet printhead are fluid chambers, where fluid is stored prior to ejection. Fluid is delivered to fluid chambers through fluid channels that are in fluid communication with a fluid supply. The fluid supply may be, for example, contained in a reservoir part of the print cartridge.




Ejection of a fluid droplet, such as ink, through a nozzle may be accomplished by quickly heating a volume of fluid within the adjacent fluid chamber. The rapid expansion of fluid vapor forces a drop of fluid through the nozzle in the orifice structure. This process is commonly known as “firing.” The fluid in the chamber may be heated with a transducer, such as a resistor, that is disposed and aligned adjacent to the nozzle.




In conventional thermal fluid-jet printhead devices, such as ink-jet cartridges, thin film resistors are used as heating elements. In such thin film devices, the resistive heating material is typically deposited on a thermally and electrically insulating substrate. A conductive layer is then deposited over the resistive material. The individual heater element (i.e., resistor) is dimensionally defined by conductive trace patterns that are lithographically formed through numerous steps including conventionally masking, ultraviolet exposure, and etching techniques on the conductive and resistive layers. More specifically, the critical width dimension of an individual resistor is controlled by a dry etch process. For example, an ion assisted plasma etch process is used to etch portions of the conductive and resistive layers not protected by a photoresist mask. The width of the remaining conductive thin film stack (of conductive and resistive layers) defines the final width of the resistor. The resistive width is defined as the width of the exposed resistive perpendicular to the direction of current flow. Conversely, the critical length dimension of an individual resistor is controlled by a subsequent wet etch process. A wet etch process is used to produce a resistor having sloped walls on the conductive layer defining the resistor length. The sloped walls of the conductive layer permit step coverage of later fabricated layers.




As discussed above, conventional thermal fluid-jet printhead devices require both dry etch and wet etch processes. The dry etch process determines the width dimension of an individual resistor, while the wet etch process defines both the length dimension and the necessary sloped walls commencing from the individual resistor. As is well known in the art, each process requires numerous steps, thereby increasing both the time to manufacture a printhead device and the cost of manufacturing a printhead device.




One or more passivation and cavitation layers are fabricated in a stepped fashion over the conductive and resistive layers and then selectively removed to create a via for electrical connection of a second conductive layer to the conductive traces. The second conductive layer is pattered to define a discrete conductive path from each trace to an exposed bonding pad remote from the resistor. The bonding pad facilitates connection with electrical contacts on the print cartridge. Activation signals are provided from the printer to the resistor via the electrical contacts.




The printhead substructure is overlaid with at least one orifice layer. Preferably, the at least one orifice layer is etched to define the shape of the desired firing fluid chamber within the at least one orifice layer. The fluid chamber is situated above, and aligned with, the resistor. The at least one orifice layer is preferably formed with a polymer coating or optionally made of an fluid barrier layer and an orifice plate. Other methods of forming the orifice layer(s) are know to those skilled in the art.




In direct drive thermal fluid-jet printer designs, the thin film device is selectively driven by electronics preferably integrated within the integrated circuit part of the printhead substructure. The integrated circuit conducts electrical signals directly from the printer microprocessor to the resistor through conductive layers. The resistor increases in temperature and creates super-heated fluid bubbles for ejection of the fluid from the fluid chamber through the nozzle. However, conventional thermal fluid-jet printhead devices can suffer from inconsistent and unreliable fluid drop sizes and inconsistent turn on energy required to fire a fluid droplet, if the resistor dimensions are not tightly controlled. Further, the stepped regions within the fluid chamber can affect drop trajectory and device reliability. The device reliability is affected by the bubble collapsing after the drop ejection thereby wearing down the stepped regions.




It is desirous to fabricate a fluid-jet printhead capable of producing fluid droplets having consistent and reliable fluid drop sizes. In addition, it is desirous to fabricate a fluid-jet printhead having a consistent turn on energy (TOE) required to fire a fluid droplet, thereby providing greater control of the size of the fluid drops.




SUMMARY OF THE INVENTION




A fluid-jet printhead has a substrate having at least one layer defining a fluid chamber for ejecting fluid. The printhead also includes a resistive layer disposed between the fluid chamber and the substrate wherein the fluid chamber has a smooth planer surface between the fluid chamber and the substrate. The printhead has a conductive layer disposed between the resistive layer and the substrate wherein the conductive layer and the resistive layer are in direct parallel contact. The conductive layer forms at least one void creating a planar resistor in the resistive layer. The planar resistor is aligned with the fluid chamber.




The present invention provides numerous advantages over conventional thin film printheads. First, the present invention provides a structure capable of firing a fluid droplet in a direction substantially perpendicular (normal or orthogonal) to a plane defined by the resistive element and ejection surface of the printhead. Second, the dimensions and planarity of the resistive material layer are-more precisely controlled, which reduces the variation in the turn on energy required to fire a fluid droplet. Third, the size of a fluid droplet is better controlled due to less variation in resistor size. Fourth, the corrosion resistance, surface texture, and electro-migration resistance of the conductive layers are improved inherently by the design.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

is an enlarged, cross-sectional, partial view illustrating a conventional thin film printhead substructure.





FIG. 2

is a flow chart of an exemplary process used to implement the conventional thin film printhead structure.





FIG. 3A

is an enlarged, cross-sectional, partial view illustrating the invention's thin film printhead substructure.





FIG. 3B

is an overhead view of the resistor element.





FIG. 4

is a flowchart of an exemplary process used to implement the invention's thin-film printhead structure.





FIG. 5

is a perspective view of a printhead fabricated with the invention.





FIG. 6

is an exemplary print cartridge that integrates and uses the printhead of FIG.


5


.





FIG. 7

is an exemplary recoding device, a printer, which uses the print cartridge of FIG.


6


.











DESCRIPTION OF THE PREFERRED EMBODIMENTS




In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims.




The present invention is a fluid-jet printhead, a method of fabricating the fluid-jet printhead, and use of a fluid-jet printhead. The present invention provides numerous advantages over the conventional fluid-jet or inkjet printheads. First, the present invention provides a structure capable of firing a fluid droplet in a direction substantially perpendicular (normal or orthogonal) to a plane defined by the resistive element and ejection surface of the printhead. Second, the dimensions and planarity of the resistive layer are more precisely controlled, which reduces the variation in the turn on energy required to fire a fluid droplet. Third, the size of a fluid droplet is better controlled due to less variation in resistor size. Fourth, the design inherently provides for improved corrosion resistance, improved electro-migration resistance of the conductive layers and a smoother resistor surface.





FIG. 1

is an enlarged, cross-sectional, partial view illustrating a conventional thin film printhead


190


. The thicknesses of the individual thin film layers are not drawn to scale and are drawn for illustrative purposes only. As shown in

FIG. 1

, thin film printhead


190


has affixed to it a fluid barrier layer


70


, which is shaped along with orifice plate


80


to define fluid chamber


100


to create an orifice layer


82


(see FIG.


5


). Optionally, the orifice layer


82


and fluid barrier layers


70


may be made of one or more layers of polymer material. A fluid droplet within a fluid chamber


100


is rapidly heated and fired through nozzle


90


when the printhead is used.




Thin film printhead substructure


190


includes substrate


10


, an insulating insulator layer


20


, a resistive layer


30


, a conductive layer


40


(including conductors


42


A and


42


B), a passivation layer


50


, a cavitation layer


60


, and a fluid barrier structure


70


defining fluid chamber


100


with orifice plate


80


.




As diagrammed in

FIG. 2

, a relatively thick insulator layer


20


(also referred to as an insulative dielectric) is applied to substrate


10


in step


110


preferably by deposition. Silicon dioxides are examples of materials that are used to fabricate insulator layer


20


. Preferably, insulator layer


20


is formed from tetraethylorthosilicate (TEOS) oxide having a 14,000 Angstrom thickness. In one alternative embodiment, insulative layer


20


is fabricated from silicon dioxide. In another embodiment, it is formed of silicon nitride.




There are numerous ways to fabricate insulation layer


20


, such as through a plasma enhanced chemical vapor deposition (PECVD), or a thermal oxide process. Insulator layer


20


serves as both a thermal and electrical insulator for the resistive circuit that will be built on its surface. The thickness of the insulator layer can be adjusted to vary the heat transferring or isolating capabilities of the layer depending on a desired turn-on energy and firing frequency.




Next in step


112


, the resistive layer


30


is applied to uniformly cover the surface of insulation layer


20


. Preferably, the resistive layer is tantalum silicon nitride or tungsten silicon nitride of a 1200 Angstrom thickness although tantalum aluminum can also be used. Next in step


114


, conductive layer


40


is applied over the surface of resistive layer


30


. In conventional structures, conductive layer


40


is formed with preferably aluminum copper or alternatively with tantalum aluminum or aluminum gold. Additionally, a metal used to form conductive layer


40


may also be doped or combined with materials such as copper, gold, or silicon or combinations thereof A preferable thickness for the conductive layer


40


is 5000 Angstroms. Resistive layer


30


and conductive layer


40


can be fabricated though various techniques, such as through a physical vapor deposition (PVD).




In step


116


, the conductive layer


40


is patterned with a photoresist mask to define the resistor's width dimension. Then in step


118


, conductive layer


40


is etched to define conductors


42


A and


42


B. Fabrication of conductors


42


A and


42


B define the critical length and width dimensions of the active region of resistive layer


30


. More specifically, the critical width dimension of the active region of resistive layer


30


is controlled by a dry etch process. For example, an ion assisted plasma etch process is used to vertically etch portions of conductive layer


40


which are not protected by a photoresist mask, thereby defining a maximum resistor width as being equal to the width of conductors


42


A and


42


B. In step


120


, the conductor layer is patterned with photoresist to define the resistor's length dimension defined as the distance between conductors


42


A and


42


B. In step


122


, the critical length dimension of the active region of resistive layer


30


is controlled by a wet etch process. A wet etch process is used since it is desirable to produce conductors


42


A and


42


B having sloped walls, thereby defining the resistor length. Sloped walls of conductive layer


42


A enables step coverage of later fabricated layers such as a passivation layer that is applied in step


124


.




Conductors


42


A and


42


B serve as the conductive traces that deliver a signal to the active region of resistive layer


30


for firing a fluid droplet. Thus, the conductive trace or path for an electrical signal impulse that heats the active region of resistive layer


30


is from conductor


42


A through the active region of resistive layer


30


to conductor


42


B.




In step


124


, passivation layer


50


is then applied uniformly over the device. There are numerous passivation layer designs incorporating various compositions. In one conventional embodiment, two passivation layers, rather than a single passivation layer are applied. In the conventional printhead example of

FIG. 1

, the two passivation layers comprise a layer of silicon nitride followed by a layer of silicon carbide. More specifically, the silicon nitride layer is deposited on conductive layer


40


and resistive layer


30


and then a silicon carbide is preferably deposited. With this design, electromigration of the conductive layer can intrude into the passivation layer.




After passivation layer


50


is deposited, cavitation barrier


60


is applied. In the conventional example, the cavitation barrier comprises tantalum. A sputtering process, such as a physical vapor deposition (PVD) or other techniques known in the art deposits the tantalum. Fluid barrier layer


70


and orifice layer


80


are then applied to the structure, thereby defining fluid chamber


100


. In one embodiment, fluid barrier layer


70


is fabricated from a photosensitive polymer and orifice layer


80


is fabricated from plated metal or organic polymers. Fluid chamber


100


is shown as a substantially rectangular or square configuration in FIG.


1


. However, it is understood that fluid chamber


100


may include other geometric configurations without varying from the present invention.




Thin film printhead


190


, shown in

FIG. 1

, illustrates one example of a typical conventional printhead. However, printhead


190


requires both a wet and a dry etch process in order to define the functional length and width of the active region of resistive layer


30


, as well as to create the sloped walls of conductive layer


40


necessary for adequate step coverage of the later fabricated layers, such as the passivation


50


and cavitation


60


layers.





FIG. 3

is an enlarged, cross-sectional, partial view illustrating the layers for fluid-jet printhead


200


incorporating the present invention. The thicknesses of the individual thin film layers are not drawn to scale and are drawn for illustrative purposes only.

FIG. 5

is an enlarged, plan view illustrating a fluid-jet printhead


200


incorporating the present invention. As shown in

FIG. 4

in step


110


, insulative layer


20


is fabricated by being deposited through any known means, such as a plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), or a thermal oxide process onto substrate


10


. Preferably, insulator layer


20


is formed from tetraethylorthosilicate (TEOS) oxide of a thickness of 9000 Angstroms. In one alternative embodiment, insulative layer


20


is fabricated from silicon dioxide. In another embodiment, it is formed of silicon nitride.




In step


126


, a dielectric material


44


is deposited onto the insulator layer. This dielectric material


44


is then patterned in step


128


to create a resistor area, and then dry etched in step


130


to form thin-film layers which define the resistor's length dimension L. In one preferred embodiment, dielectric material


44


is formed from silicon nitride of approximately 5000 Angstroms of thickness. In an alternative embodiment dielectric material


44


is fabricated from silicon dioxide or silicon carbide.




In step


114


, conductive material layer


40


is then fabricated on top of insulative layer


20


and abuts the etched dielectric material


44


to form the resistor length L. In one embodiment, conductive material layer


40


is a layer formed through a physical vapor deposition (PVD) from aluminum and copper of approximately 5000 Angstrom of thickness. More specifically, in one embodiment, conductive material layer


40


includes up to approximately two percent copper in aluminum, preferably approximately 0.5 percent copper in aluminum. Utilizing a small percent of copper in aluminum limits electro-migration. In another preferred embodiment, conductive material layer


40


is formed from titanium, copper, or tungsten.




In step


132


, a photoimagable masking material such as photoresist is deposited on portions of conductive layer


40


, thereby exposing other portions of conductive layer


40


.




In step


134


, the top surface of conductive layer


40


is then planarized such that the top surface of dielectric material


44


is level with the top surface of conductive layer


40


. In one preferred embodiment, the top surface of conductive layer


40


is planarized through use of a resist-etch-back (REB) process. In another embodiment, the top surface of conductive layer


40


is planarized through use of a chemical/mechanical polish (CMP) process.




Next in step


112


, the resistive layer


30


is applied to uniformly cover the surface of the entire surface of substrate


10


and previously applied layers (wafer surface). Preferably, the resistive layer


30


is tungsten silicon nitride of a 1200 Angstrom thickness although tantalum aluminum, tantalum, or tantalum silicon nitride can also be used




In step


116


, a photoimagable masking material is deposited on the previously applied layers on the substrate surface. The photoimagable masking material is removed where the combined resistive layer


30


and conductive layer


60


are to be etched to define respectively the resistor width W and conductors


42


A and


42


B.




In step


136


, the exposed portions of resistive layer


30


and conductive layer


40


are removed through a dry etch process, several of which are known to those skilled in the art such as described in step


118


of FIG.


2


. This etching step defines and forms the resistor width. The photoresist mask is then removed, thereby exposing an exemplary substantially rectangular-shaped conductors


42


A and


42


B. The passivation


50


, cavitation


60


, barrier


70


and orifice


80


layers are then applied as described for the conventional printhead.




Conductors


42


A and


42


B provide an electrical connection/path between external circuitry and the formed resistive element. Therefore, conductors


42


A and


42


B transmit energy to the formed resistor to create heat capable of firing a fluid droplet positioned on a top surface of the formed resistive element in a direction perpendicular to the top surface of the resistive element.




As shown in

FIG. 3B

, conductors


42


A and


42


B define a resistor element


46


between conductors


42


A and


42


B. Resistive element


46


has a length L equal to the distance between conductors


42


A and


42


B. Resistive element


46


has a width W. However, it is understood that resistive element


46


may be fabricated having any one of a variety of configurations, shapes, or sizes, such as a thin trace or a wide trace of conductors


42


A and


42


B. The only requirement of the resistive element


46


is that it contacts conductors


42


A and


42


B to ensure a proper electrical connection. While the actual length L of resistive element


46


is equal to or greater than the distance between the outer most edges of conductors


42


A and


42


B, the active portion of resistive element


46


which conducts heat to a droplet of fluid positioned above resistive element


46


corresponds to the distance between the outermost edges of conductors


42


A and


42


B.




In

FIG. 5

, each orifice nozzle


90


is in fluid communication with respective fluid chambers


100


(shown enlarged in

FIG. 2

) defined in printhead


200


. Each fluid chamber


100


is constructed in orifice structure


82


adjacent to thin film structure


32


that preferably includes a transistor coupled to the resistive component. The resistive component is selectively driven (heated) with sufficient electrical current to instantly vaporize some of the fluid in fluid chamber


100


, thereby forcing a fluid droplet through nozzle


90


.




Exemplary fluid-jet print cartridge


220


is illustrated in FIG.


6


. The fluid-jet printhead device of the present invention is a portion of fluid-jet print cartridge


220


. Fluid-jet print cartridge


220


includes body


218


, flexible circuit


212


having circuit pads


214


, and printhead


200


having orifice nozzles


90


. Fluid-jet print cartridge


220


has fluid-jet printhead


200


in fluidic connection to fluid in body


218


using a fluid delivery system


216


, shown as a sponge to provide backpressure using capillary action in the sponge (preferably closed-cell foam) to prevent leakage of fluid though orifice nozzles


90


when not in use. While flexible circuit


212


is shown in

FIG. 6

, it is understood that other electrical circuits known in the art may be utilized in place of flexible circuit


212


without deviating from the present invention. It is only necessary that electrical contacts


214


be in electrical connection with the circuitry of fluid-jet print cartridge


220


. Printhead


200


having orifice nozzles


90


is attached to the body


218


and controlled for ejection of fluid droplets, typically by a printer but other recording devices such as plotters, and fax machines, too name a couple, can be used. Thermal fluid-jet print cartridge


220


includes orifice nozzles


90


through which fluid is expelled in a controlled pattern during printing. Conductive drivelines for each resistor component are carried upon flexible circuit


212


mounted to the exterior of print cartridge body


218


. Circuit contact pads


214


(shown enlarged in

FIG. 6

for illustration) at the ends of the resistor drive lines engage similar pads carried on a matching circuit attached to a printer (not shown). A signal for firing the transistor is generated by a microprocessor and associated drivers on the printer that apply the signal to the drivelines.





FIG. 7

is an exemplary recording device, a printer


240


, which uses the exemplary fluid-jet print cartridge


220


of FIG.


6


. The fluid-jet print cartridge


220


is placed in a carriage mechanism


254


to transport the fluid-jet print cartridge


220


across a first direction of medium


256


. A medium feed mechanism


252


transports the medium


256


in a second direction across fluid-jet printhead


220


. Medium feed mechanism


252


and carriage mechanism


254


form a transport mechanism to move the fluid-jet print cartridge


220


across the first and second directions of medium


256


. An optional medium tray


250


is used to hold multiple sets of medium


256


. After the medium is recorded by fluid-jet print cartridge


220


using fluid-jet printhead


200


to eject fluid onto medium


256


, the medium


256


is optionally placed on media tray


258


.




In operation, a droplet of fluid is positioned within fluid chamber


100


. Electrical current is supplied to resistive element


46


via conductors


42


A and


42


B such that resistive element


46


rapidly generates energy in the form of heat. The heat from resistive element


46


is transferred to a droplet of fluid within fluid chamber


100


until the droplet of fluid is “fired” through nozzle


90


. This process is repeated several times in order to produce a desired result. During this process, a single dye may be used, producing a single color design, or multiple dyes may be used, producing a multicolor design.




The present invention provides numerous advantages over the conventional printhead. First, the resistor length of the present invention is defined by the placement of dielectric material


44


that is fabricated during a combined photo process and dry etching process. The accuracy of the present process is considerably more controllable than conventional wet etch processes. More particularly, the present process is in the range of 10-25 times more controllable than a conventional process. With the current generation of low drop weight, high-resolution printheads, resistor lengths have decreased from approximately 35 micrometers to less than approximately 10 micrometers. Thus, resistors size variations can significantly affect the performance of a printhead. Resistor size variations translate into drop weight and turn on energy variations across the resistor on a printhead. Thus, the improved length control of the resistive material layer yields a more consistent resistor size and resistance, which thereby improves the consistency in the drop weight of a fluid droplet and the turn on energy necessary to fire a fluid droplet.




Second, the resistor structure of the present invention includes a completely flat top surface and does not have the step contour associated with conventional fabrication designs. A flat structure (smooth planar surface) provides consistent bubble nucleation, better scavenging of the fluid chamber, and a flatter topology, thereby improving the adhesion and lamination of the barrier structure to the thin film. Third, due to the flat topology of the present structure, the barrier structure is allowed to cover the edge of the resistor. By introducing heat into the floor of the entire fluid chamber, fluid droplet ejection efficiency is improved.




Third, because there is no wet slope etch process used in the fabrication of the invention, slope roughness, and conductive layer residue on the resistive layer are no longer issues.




Fourth, due to the encapsulation and cladding of conductive layer


40


by resistive layer


30


, electro-migration of the conductive layer


40


is minimized into the passivation layer.




Further, by attaching the printhead


200


to the fluid cartridge


220


, the combination forms a convenient module that can be packaged for sale.




Although specific embodiments have been illustrated and described herein for purposes of description of the preferred embodiment, it will be appreciated by those of ordinary skill in the art that a wide variety of alternate and/or equivalent implementations calculated to achieve the same purposes may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. Those with skill in the chemical, mechanical, electromechanical, electrical, and computer arts will readily appreciate that the present invention may be implemented in a very wide variety of embodiments. This application is intended to cover any adaptations or variations of the preferred embodiments discussed herein. Therefore, it is manifestly intended that this invention be limited only by the claims and the equivalents thereof.



Claims
  • 1. A method for creating a planar resistor on a substrate surface, comprising the steps of:depositing a insulator layer on the substrate surface; depositing a dielectric layer on the insulator layer; patterning the dielectric layer to create a resistor area; etching the patterned dielectric layer to form a dielectric resistor area, having a resistor length dimension, on the insulator layer; depositing a conductive layer on the insulator layer to abut the resistor length dimension of the dielectric resistor area to form the resistor length; planarizing the conductive layer and the dielectric resistor area to form a planar resistor area; depositing a resistive layer on the planar resistor area; patterning the resistive layer to create a resistor width dimension; and etching the resistive layer to form the resistor width.
  • 2. A method for creating a printhead, comprising the steps of:creating a planar resistor of claim 1; applying at least one layer defining a fluid chamber on the planar resistor area.
  • 3. The method of claim 2, further comprising the step of depositing a planar passivation layer between the planar resistor and the fluid chamber.
  • 4. The method of claim 2, further comprising the step of depositing a planar cavitation layer between the planar resistor and the fluid chamber.
  • 5. A printead made with the method of claim 2.
  • 6. A method of using the printhead of claim 5, comprising the steps of attaching the printhead to a fluid container having a fluid conduction path that makes fluidic contact with the fluid chamber.
  • 7. The method of claim 6, further comprising the step of using the fluid cartridge and attached printhead with a recording device.
  • 8. A method of producing a design on a medium using the method of claim 7.
  • 9. A resistor for a fluid-jet printhead made with the method of claim 1.
  • 10. A method for using the planar resistor created by the method of claim 1, comprising the steps of:combining at least one layer defining a fluid chamber for ejecting fluid on the planar resistor; supplying fluid into the fluid chamber; and wherein the planar resistor is capable of being activated to thereby heat to fluid and cause it to be ejected from the fluid chamber.
CROSS REFERENCE TO RELATED DOCUMENT

The present application is a division of application Ser. No. 09/747,725, now U.S. Pat. No. 6,457,814 B1 which was filed on 20th Dec. 2000.

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