Claims
- 1. A method of manufacturing a semiconductor light emitting device comprising the steps of:
- forming a first cladding layer, an active layer, and a second cladding layer on a substrate in this order;
- wherein the first cladding layer and the second cladding layer are comprised of II-VI compound semiconductors including at least one member of the group II elements from the group consisting of Zn, Hg, Cd, Mg and at least one member of the group VI elements from the group consisting of S, Se, Te, and
- further wherein said step of forming the first cladding layer comprises a step of forming the cladding layer such that at a growth temperature the first cladding layer and the substrate are substantially lattice-matched at said growth temperature due to a difference in thermal expansion coefficients between the first cladding layer and the substrate, and such that they are lattice-mismatched at an ambient temperature.
- 2. A method of manufacturing a semiconductor light emitting device according to claim 1, wherein said substrate is a GaAs substrate, and at least one of said first cladding layer and said second cladding layer is ZnMgSSe layer.
Priority Claims (3)
Number |
Date |
Country |
Kind |
5-222566 |
Sep 1993 |
JPX |
|
6-015523 |
Feb 1994 |
JPX |
|
6-095097 |
May 1994 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 08/570,376 filed Dec. 11, 1995. U.S. Pat. No. 5,633,514, which is a cont. of Ser. No. 299,655 filed Sep. 2, 1994, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
402194564 |
Aug 1990 |
JPX |
Non-Patent Literature Citations (3)
Entry |
M. Ilegems, "Properties of III-V Layers", in The Physics and Technology of Molecular Beam Epitaxy edited by E. Parker, Plenum Press, pp. 86-89 (no month given), 1985. |
L.Esaki, "Compositional Superlattices", in The Physics and Technology of Molecular Beam Epitaxy edited by E. Parker, Plenum Press, p. 179 (no month given), 1985. |
T. Yao, "MBE of II-VI Compounds", in The Physics and Technology of Molecular Beam Epitaxy edited by E. Parker, Plenum Press, p. 341 (no month given), 1985. |
Continuations (2)
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Number |
Date |
Country |
Parent |
570376 |
Dec 1995 |
|
Parent |
299655 |
Sep 1994 |
|